arXiv subjects

Petr Malinsky

Publications and source records attributed to Petr Malinsky.

2 recordsLinked to original sources

arXiv2026

Hybrid films of Co - C60 preparation and changes induced by external stimuli

In this work, we report on the study on organic-metal hybrid systems, in particular Co-C60 fullerene thin films. This study mainly focused on the investigation of the morphological and structural evolution of the film surface after various external stimuli designed to provide energy to the system. For film growth, we adopted an innovative approach, combining ion-beam sputtering of a pure metal target with thermal evaporation of C60 in a co-deposition setup. The films underwent a series of treatments to induce modifications. Laser and ion irradiations were performed using a pulsed laser, a continuous Ar beam, and a pulsed C beam. In addition, thermal annealing in vacuum was performed to examine the long-term effects of temperature. The composition of deposited film was investigated using Ion Beam Analysis, the morphology and the structure, and the effects of treatments on the films were studied using SEM and TEM microscopies and Raman spectroscopy. Changes in electrical resistance were also measured to explore potential applications of these films after treatment.

cond-mat.mtrl-sci↗

arXiv2026

Electronic Structure of UGe$_{2\pm x}$ Thin Films from Photoelectron Spectroscopy

Uranium digermanide UGe$_2$, the first ferromagnetic superconductor, represents a key composition in the U-Ge system dominated by U-5$f$ states. To examine the impact of controlled stoichiometric deviations on the electronic structure, UGe$_{2\pm x}$ thin films ($0 \le x \le 1$) were prepared by triode sputtering and studied on pristine surfaces by X-ray (XPS) and Ultraviolet (UPS) photoelectron spectroscopy. XPS and UPS reveal a robust metallic valence band with a dominant U-5$f$ contribution at the Fermi level and a broad incoherent feature at higher binding energies, without qualitative changes in spectral line shape across the composition range. The experimental spectrum of UGe$_2$ thin films is well reproduced by DFT+U(ED) valence-band calculations combining density functional theory with exact diagonalization of the multiconfigurational U-5$f$ shell. These results demonstrate that the overall U-Ge electronic framework of UGe$_2$ thin films remains resilient to moderate stoichiometric deviations, providing a reliable electronic baseline for future studies of interface- and heterostructure-driven phenomena in uranium-based systems.

cond-mat.str-el↗