arXiv subjects

Petro Maksymovych

Publications and source records attributed to Petro Maksymovych.

At least 19 recordsLinked to original sources

arXiv2026

Fingerprinting superconductors by disentangling Andreev and quasiparticle currents across tunable tunnel junctions

Tunneling Andreev reflection (TAR) spectroscopy offers a powerful new approach to fingerprint superconducting pairing symmetry at the atomic scale. By leveraging the exponential sensitivity of excess tunneling decay rate to Andreev reflection, TAR robustly distinguishes between s-wave, d-wave, and more complex order parameters, overcoming limitations of traditional conductance-based techniques. Here, using atomistic superconducting transport simulations, we show that the additivity of excess decay rate enables clear separation of Andreev and quasiparticle currents. In particular, we reveal how their competition as well as higher-order scattering processes shape both the decay rate spectra and their dependence on the coupling strength. We show that this phenomenology stems from the fact that Andreev reflection dominates mid-gap conductance for s-wave superconductors, it is suppressed for the d-wave, and it coexists with quasiparticle tunneling in sign-changing symmetries if the expectation value for the superconducting gap remains finite. These distinct spectral fingerprints pave the way for atomically resolved identification of unconventional superconducting states.

cond-mat.supr-con↗

arXiv2025

Real-space visualization of orbital-selective superconductivity in FeSe

We investigate the orbitally resolved superconducting properties of bulk FeSe using scanning tunneling microscopy (STM). We find that the spectral weights of both the large $Δ_1$ and small $Δ_2$ superconducting gaps remain nearly unchanged at the top Se sites as the STM tip approaches atomic contact. In contrast, the spectral weight of $Δ_2$ increases significantly at the Fe and bottom Se sites. These results suggest that the gap $Δ_2$ is localized in the xy-plane and likely associated with the dxy orbital band. Furthermore, we observe a long-range suppression of the large gap $Δ_1$ near one-dimensional (1D) defects such as twin boundaries, wrinkles, and step edges, whereas $Δ_2$ remains robust. This indicates that the two superconducting gaps respond differently to such 1D defects. High-resolution measurement using a Pb-coated tip reveals localized in-gap states near 1D defects, indicating possible defect-induced magnetism. Our findings highlight the contrasting behaviors of gap $Δ_1$ and gap $Δ_2$ in response to local electronic and magnetic environments and provide real-space evidence for orbital-selective superconductivity.

cond-mat.supr-con↗

arXiv2024

Nanoscale control over single vortex motion in an unconventional superconductor

To realize braiding of vortex lines and understand the basic properties of the energy landscape for vortex motion, precise manipulation of superconducting vortices on the nanoscale is required. Here, we reveal that a localized trapping potential powerful enough to pull in the vortex line can be created with nanoscale precision on the surface of an FeSe superconductor using the tip of a scanning tunneling microscope. The mechanism of tip-induced force is traced to local modification of electronic properties and reduction of the superconducting gap, most likely due to tip-induced strain. Intriguingly, the tip-induced trapping potential is much less pronounced along the twin boundaries, dramatically reducing the vortice's degree of motion relative to the surrounding lattice. By enabling nanoscale manipulation of single vortices in Fe-based superconductors, and likely similar materials with strong strain-susceptibility of the superconducting gap, our findings provide an important step toward further development of vortex-based quantum information processing.

cond-mat.supr-con↗

arXiv2023

Nanoscale imaging of He-ion irradiation effects on amorphous TaO$_x$ toward electroforming-free neuromorphic functions

Resistive switching in thin films has been widely studied in a broad range of materials. Yet the mechanisms behind electroresistive switching have been persistently difficult to decipher and control, in part due to their non-equilibrium nature. Here, we demonstrate new experimental approaches that can probe resistive switching phenomena, utilizing amorphous TaO$_x$ as a model material system. Specifically, we apply Scanning Microwave Impedance Microscopy (sMIM) and cathodoluminescence (CL) microscopy as direct probes of conductance and electronic structure, respectively. These methods provide direct evidence of the electronic state of TaO$_x$ despite its amorphous nature. For example CL identifies characteristic impurity levels in TaO$_x$, in agreement with first principles calculations. We applied these methods to investigate He-ion-beam irradiation as a path to activate conductivity of materials and enable electroforming-free control over resistive switching. However, we find that even though He-ions begin to modify the nature of bonds even at the lowest doses, the films conductive properties exhibit remarkable stability with large displacement damage and they are driven to metallic states only at the limit of structural decomposition. Finally, we show that electroforming in a nanoscale junction can be carried out with a dissipated power of < 20 nW, a much smaller value compared to earlier studies and one that minimizes irreversible structural modifications of the films. The multimodal approach described here provides a new framework toward the theory/experiment guided design and optimization of electroresistive materials.

cond-mat.mtrl-sci↗

arXiv2023

Atomic scale imaging of sign-changing order parameter in superconducting FeSe with Tunneling Andreev Reflection

The pairing symmetry of the superconducting order parameter in iron-based superconductors has been a subject of debate, with various models proposing s-wave, d-wave, and mixed combinations as possible candidates. Here we probe the pairing symmetry of FeSe utilizing the new methodology of Tunneling Andreev Reflection (TAR). TAR directly exploits the transparency-dependence of tunneling current to disentangle contributions of single-particle current and Andreev reflection. These measurements provided new direct evidence in favor of the sign-changing nature of the superconducting order in FeSe, in a distinctly complementary approach to nanoscale imaging of quasiparticle interference. Crucially TAR can also probe higher-order contributions to Andreev reflection. Quantitative comparison of the experimental signatures of higher-order Andreev reflections with those in concomitant tight-binding simulations revealed new evidence in support of the nodal gap structure of superconductivity in FeSe. Finally, the effect of structural topological defects can be directly probed with TAR owing to its atomic spatial resolution. In particular, we find that superconductivity is completely suppressed along the twin boundary while its electronic structure is characterized by a V-shaped signature of a pseudogap state. Our findings provide new insight into the pairing symmetry of an unconventional superconductor, demonstrating the potential of differential tunneling Andreev reflection to reveal microscopic properties of emerging quantum materials.

cond-mat.supr-con↗

arXiv2022

Polarization-controlled volatile ferroelectric and capacitive switching in Sn$_2$P$_2$S$_6$

Smart electronic circuits that support neuromorphic computing on the hardware level necessitate materials with memristive, memcapacitive, and neuromorphic-like functional properties; in short, the electronic response must depend on the voltage history, thus enabling learning algorithms. Here we demonstrate volatile ferroelectric switching of Sn$_2$P$_2$S$_6$ at room temperature and see that initial polarization orientation strongly determines the properties of polarization switching. In particular, polarization switching hysteresis is strongly imprinted by the original polarization state, shifting the regions of non-linearity toward zero-bias. As a corollary, polarization switching also enables effective capacitive switching, approaching the sought-after regime of memcapacitance. Landau-Ginzburg-Devonshire simulations demonstrate that one mechanism by which polarization can control the shape of the hysteresis loop is the existence of charged domain walls decorating the periphery of the repolarization nucleus. These walls oppose the growth of the switched domain and favor back-switching, thus creating a scenario of controlled volatile ferroelectric switching. Although the measurements were carried out with single crystals, prospectively volatile polarization switching can be tuned by tailoring sample thickness, domain wall mobility and electric fields, paving way to non-linear dielectric properties for smart electronic circuits.

physics.app-ph↗

arXiv2022

Structures and velocities of noisy ferroelectric domain walls

Ferroelectric domain wall motion is fundamental to the switching properties of ferroelectric devices and is influenced by a wide range of factors including spatial disorder within the material and thermal noise. We build a Landau-Ginzburg-Devonshire (LGD) model of 180${}^{\circ}$ ferroelectric domain wall motion that explicitly takes into account the presence of both spatial and temporal disorder. We demonstrate both creep flow and linear flow regimes of the domain wall dynamics by solving the LGD equations in a Galilean frame moving with the wall velocity $v$. Thermal noise plays a key role in the wall depinning process at small fields $E$. We study the scaling of the velocity $v$ with the applied DC electric field $E$ and show that noise strongly affects domain wall velocities. We also show that the domain wall widens significantly in the presence of thermal noise, especially as the material temperature $T$ approaches the critical temperature $T_c$. These calculations therefore point to the potential of noise and disorder to become control factors for the switching properties of ferroelectric materials, for example for advancement of microelectronic applications.

cond-mat.mtrl-sci↗

arXiv2022

Non-contact Andreev reflection as a direct probe of superconductivity on the atomic scale

Direct detection of superconductivity has long been a key strength of point-contact Andreev reflection. However, its applicability to atomic-scale imaging is limited by the mechanical contact of the Andreev probe. To this end, we present a new method to probe Andreev reflection in a tunnel junction, leveraging tunneling spectroscopy and junction tunability to achieve quantitative detection of Andreev scattering. This method enables unambiguous assignment of superconducting origins of current-carrying excitations as well as detection of higher order Andreev processes in atomic-scale junctions. We furthermore revealed distinct sensitivity of Andreev reflection to natural defects, such as step edges, even in classical superconductors. The methodology opens a new path to nanoand atomic-scale imaging of superconducting properties, including disordered superconductors and proximity to phase transitions.

cond-mat.supr-con↗

arXiv2022

Ionic control over ferroelectricity in 2D layered van der Waals capacitors

The van der Waals layered material CuInP2S6 features interesting functional behavior, including the existence of four uniaxial polarization states, polarization reversal against the electric field through Cu ion migration, a negative-capacitance regime, and reversible extraction of Cu ions. At the heart of these characteristics lies the high mobility of Cu ions, which also determines the spontaneous polarization. Therefore, Cu migration across the lattice results in unusual ferroelectric behavior. Here, we demonstrate how the interplay of polar and ionic properties provides a path to ionically controlled ferroelectric behavior, achieved by applying selected DC voltage pulses and subsequently probing ferroelectric switching during fast triangular voltage sweeps. Using current measurements and theoretical calculations, we observe that increasing DC pulse duration results in higher ionic currents, the build-up of an internal electric field that shifts polarization loops, and an increase in total switchable polarization by ~50% due to the existence of a high polarization phase which is stabilized by the internal electric field. Apart from tuning ferroelectric behavior by selected square pulses, hysteretic polarization switching can even be entirely deactivated and reactivated, resulting in three-state systems where polarization switching is either inhibited or can be performed in two different directions.

cond-mat.mtrl-sci↗

arXiv2021

Probing phonon softening in ferroelectrics by the scanning probe microwave spectroscopy

Microwave measurements have recently been successfully applied to measure ferroelectric materials on the nanoscale, including detection of polarization switching and ferroelectric domain walls. Here we discuss the question whether scanning probe microscopy (SPM) operating at microwave frequency can identify the changes associated with the soft phonon dynamics in a ferroic. The analytical expressions for the electric potential, complex impedance and dielectric losses are derived and analyzed, since these physical quantities are linked to experimentally-measurable properties of the ferroic. As a ferroic we consider virtual or proper ferroelectric with an optic phonon mode that softens at a Curie point. We also consider a decay mechanism linked to the conductance of the ferroic, and thus manifesting itself as the dielectric loss in the material. Our key finding is that the influence of the soft phonon dispersion on the surface potential distribution, complex impedance and dielectric losses are evidently strong in the vicinity (10-30 K) of the Curie temperature. Furthermore, we quantified how the spatial distribution and frequency spectra of the complex impedance and the dielectric losses react on the dynamics of the soft phonons near the Curie point. These results set the stage for characterization of polar phase transitions with nanoscale microwave measurements, providing a complementary approach to well established electromechanical measurements for fundamental understanding of ferroelectric properties as well as their applications in telecommunication and computing.

cond-mat.mtrl-sci↗

arXiv2021

Atomic-scale analysis of disorder by similarity learning from tunneling spectroscopy

Rapid proliferation of hyperspectral imaging in scanning probe microscopies creates unique opportunities to systematically capture and categorize higher dimensional datasets, toward new insights into electronic, mechanical and chemical properties of materials with nano- and atomic-scale resolution. Here we demonstrate similarity learning for tunneling spectroscopy acquired on superconducting material (FeSe) with sparse density of imperfections (Fe vacancies). Popular methods for unsupervised learning and discrete representation of the data in terms of clusters of characteristic behaviors were found to produce inconsistencies with respect to capturing the location and tunneling characteristics of the vacancy sites. To this end, we applied a more general, non-linear similarity learning. This approach was found to outperform several widely used methods for dimensionality reduction and produce a clear differentiation of the type of tunneling spectra. In particular, significant spectral weight transfer likely associated with the electronic reconstruction by the vacancy sites, is systematically captured, as is the spatial extent of the vacancy region. Given that a great variety of electronic materials will exhibit similarly smooth variation of the spectral responses due to random or engineered inhomogeneities in their structure, we believe our approach will be useful for systematic analysis of hyperspectral imaging with minimal prior knowledge, as well as prospective comparison of experimental measurements to theoretical calculations with explicit consideration of disorder.

cond-mat.supr-con↗

arXiv2021

Stress-Induced Phase Transitions in Nanoscale CuInP$_2$S$_6$

Using Landau-Ginsburg-Devonshire approach and available experimental results we reconstruct the thermodynamic potential of the layered ferroelectric CuInP$_2$S$_6$ (CIPS), which is expected to be applicable a wide range of temperatures and applied pressures. The analysis of temperature dependences of the dielectric permittivity and lattice constants for different applied pressures unexpectedly reveals the critically important role of the nonlinear electrostriction in this material. With the nonlinear electrostriction included we calculated temperature and pressure phase diagrams and spontaneous polarization of bulk CIPS. Using the coefficients of the reconstructed four-well thermodynamic potential, we study the strain-induced phase transitions in thin epitaxial CIPS films, as well as the stress-induced phase transitions in CIPS nanoparticles, which shape varies from prolate needles to oblate disks. We reveal the strong influence of the mismatch strain, elastic stress and shape anisotropy on the polar properties and phase diagrams of nanoscale CIPS. Also, we derived analytical expressions, which allow the elastic control of the nanoscale CIPS polar properties. Hence obtained results can be of particular interest for the strain-engineering of nanoscale layered nanoferroelectrics.

cond-mat.mtrl-sci↗

arXiv2021

Compressed Sensing for STM imaging of defects and disorder

Compressed sensing (CS) is a valuable technique for reconstructing measurements in numerous domains. CS has not yet gained widespread adoption in scanning tunneling microscopy (STM), despite potentially offering the advantages of lower acquisition time and enhanced tolerance to noise. Here we applied a simple CS framework, using a weighted iterative thresholding algorithm for CS reconstruction, to representative high-resolution STM images of superconducting surfaces and adsorbed molecules. We calculated reconstruction diagrams for a range of scanning patterns, sampling densities, and noise intensities, evaluating reconstruction quality for the whole image and chosen defects. Overall we find that typical STM images can be satisfactorily reconstructed down to 30\% sampling - already a strong improvement. We furthermore outline limitations of this method, such as sampling pattern artifacts, which become particularly pronounced for images with intrinsic long-range disorder, and propose ways to mitigate some of them. Finally we investigate compressibility of STM images as a measure of intrinsic noise in the image and a precursor to CS reconstruction, enabling a priori estimation of the effectiveness of CS reconstruction with minimal computational cost.

cond-mat.mes-hall↗

arXiv2020

Statistical detection of Josephson, Andreev, and single quasiparticle currents in scanning tunneling microscopy

We present a method to identify distinct tunneling modes in tunable superconducting tunnel junction composed of superconducting tip and sample in scanning tunneling microscope. Combining the measurement of the relative decay constant of tunneling current extracted from I-V-z spectroscopy with its statistical analysis over the atomic disorders in the sample surface, we identified the crossover of tunneling modes between single quasiparticle tunneling, multiple Andreev reflection, and Josephson tunneling with respect to the bias voltage. The method enables one to determine the particular tunneling regime independently of the spectral shapes, and to reveal the intrinsic modulation of Andreev reflection and Josephson current that would be crucial for quantum device application of superconductors.

cond-mat.supr-con↗

arXiv2020

Phenomenological description of bright domain walls in ferroelectric-antiferroelectric layered chalcogenides

Recently, a layered ferroelectric CuInP2Se6 was shown to exhibit domain walls with locally enhanced piezoresponse - a striking departure from the observations of nominally zero piezoresponse in most ferroelectrics. Although it was proposed that such "bright" domain walls are phase-boundaries between ferri- and antiferroelectrically ordered regions of the materials, the physical mechanisms behind the existence and response of these boundaries remain to be understood. Here, using Landau-Ginzburg-Devonshire phenomenology combined with four sub-lattices model, we describe quantitatively the bright-contrast and dark-contrast domain boundaries between the antiferroelectric, ferroelectric or ferrielectric long-range ordered phases in a layered ferroelectric-antiferroelectric ferroics, such as CuInP2(S1-ySey)6

cond-mat.mtrl-sci↗

arXiv2019

Room Temperature Electrocaloric Effect in Layered Ferroelectric CuInP2S6 for Solid State Refrigeration

A material with reversible temperature change capability under an external electric field, known as the electrocaloric effect (ECE), has long been considered as a promising solid-state cooling solution. However, electrocaloric (EC) performance of EC materials generally is not sufficiently high for real cooling applications. As a result, exploring EC materials with high performance is of great interest and importance. Here, we report on the ECE of ferroelectric materials with van der Waals layered structure (CuInP2S6 or CIPS in this work in particular). Over 60% polarization charge change is observed within a temperature change of only 10 K at Curie temperature. Large adiabatic temperature change (|ΔT|) of 3.3 K, isothermal entropy change (|ΔS|) of 5.8 J kg-1 K-1 at |ΔE|=142.0 kV cm-1 at 315 K (above and near room temperature) are achieved, with a large EC strength (|ΔT|/|ΔE|) of 29.5 mK cm kV-1. The ECE of CIPS is also investigated theoretically by numerical simulation and a further EC performance projection is provided.

cond-mat.mtrl-sci↗

arXiv2019

Nanoscale Interlayer Defects in Iron Arsenides

Using a local real-space microscopy probe, we discover evidence of nanoscale interlayer defects along the c-crystallographic direction in BaFe2As2 (122) based iron-arsenide superconductors. We find ordered 122 atomic arrangements within the ab-plane, and within regions of ~10 to 20 nm size perpendicular to this plane. While the FeAs substructure is very rigid, Ba ions are relatively weakly bound and can be displaced from the 122, forming stacking faults resulting in the physical separation of the 122 between adjacent ordered domains. The evidence for interlayer defects between the FeAs superconducting planes gives perspective on the minimal connection between interlayer chemical disorder and high-temperature superconductivity. In particular, the Cooper pairs may be finding a way around such localized interlayer defects through a percolative path of the ordered layered 122 lattice that may not affect Tc.

cond-mat.supr-con↗

arXiv2019

Giant negative electrostriction and dielectric tunability in a van der Waals layered ferroelectric

The interest in ferroelectric van der Waals crystals arises from the potential to realize ultrathin ferroic systems owing to the reduced surface energy of these materials and the layered structure that allows for exfoliation. Here, we quantitatively unravel giant negative electrostriction of van der Waals layered copper indium thiophosphate (CIPS), which exhibits an electrostrictive coefficient Q33 as high as -3.2 m4/C2 and a resulting bulk piezoelectric coefficient d33 up to -85 pm/V. As a result, the electromechanical response of CIPS is comparable in magnitude to established perovskite ferroelectrics despite possessing a much smaller spontaneous polarization of only a few uC/cm2. In the paraelectric state, readily accessible owing to low transition temperatures, CIPS exhibits large dielectric tunability, similar to widely-used barium strontium titanate, and as a result both giant and continuously tunable electromechanical response. The persistence of electrostrictive and tunable responses in the paraelectric state indicates that even few layer films or nanoparticles will sustain significant electromechanical functionality, offsetting the inevitable suppression of ferroelectric properties in the nanoscale limit. These findings can likely be extended to other ferroelectric transition metal thiophosphates and (quasi-) two-dimensional materials and might facilitate the quest towards novel ultrathin functional devices incorporating electromechanical response.

cond-mat.mtrl-sci↗