arXiv subjects

Ph. Avouris

Publications and source records attributed to Ph. Avouris.

12 recordsLinked to original sources

arXiv2013

Phonon mediated interlayer conductance in twisted graphene bilayers

Conduction between graphene layers is suppressed by momentum conservation whenever the layer stacking has a rotation. Here we show that phonon scattering plays a crucial role in facilitating interlayer conduction. The resulting dependence on orientation is radically different than previously expected, and far more favorable for device applications. At low temperatures, we predict diode-like current-voltage characteristics due to a phonon bottleneck. Simple scaling relationships give a good description of the conductance as a function of temperature, doping, rotation angle, and bias voltage, reflecting the dominant role of the interlayer beating phonon mode.

cond-mat.mes-hall↗

arXiv2012

Electroluminescence in Single Layer MoS2

We detect electroluminescence in single layer molybdenum disulphide (MoS2) field-effect transistors built on transparent glass substrates. By comparing absorption, photoluminescence, and electroluminescence of the same MoS2 layer, we find that they all involve the same excited state at 1.8eV. The electroluminescence has pronounced threshold behavior and is localized at the contacts. The results show that single layer MoS2, a direct band gap semiconductor, is promising for novel optoelectronic devices, such as 2-dimensional light detectors and emitters.

cond-mat.mes-hall↗

arXiv2009

The role of contacts in graphene transistors: A scanning photocurrent study

A near-field scanning optical microscope is used to locally induce photocurrent in a graphene transistor with high spatial resolution. By analyzing the spatially resolved photo-response, we find that in the n-type conduction regime a p-n-p structure forms along the graphene device due to the doping of the graphene by the metal contacts. The modification of the electronic structure is not limited only underneath the metal electrodes, but extends 0.2-0.3 um into the graphene channel. The asymmetric conduction behavior of electrons and holes that is commonly observed in graphene transistors is discussed in light of the potential profiles obtained from this photocurrent imaging approach. Furthermore, we show that photocurrent imaging can be used to probe single- / multi-layer graphene interfaces.

cond-mat.mes-hall↗

arXiv2008

Magneto-spectroscopy of Highly-Aligned Carbon Nanotubes: Identifying the Role of Threading Magnetic Flux

We have investigated excitons in highly-aligned single-walled carbon nanotubes (SWCNTs) through optical spectroscopy at low temperature (1.5 K) and high magnetic fields ($\textbf{\textit{B}}$) up to 55 T. SWCNT/polyacrylic acid films were stretched, giving SWCNTs that are highly aligned along the direction of stretch ($\hat{n}$). Utilizing two well-defined measurement geometries, $\hat{n}\parallel\textbf{\textit{B}}$ and $\hat{n}\perp\textbf{\textit{B}}$, we provide unambiguous evidence that the photoluminescence energy and intensity are only sensitive to the $\textbf{\textit{B}}$-component parallel to the tube axis. A theoretical model of one-dimensional magneto-excitons, based on exchange-split `bright' and `dark' exciton bands with Aharonov-Bohm-phase-dependent energies, masses, and oscillator strengths, successfully reproduces our observations and allows determination of the splitting between the two bands as $\sim4.8$ meV for (6,5) SWCNTs.

cond-mat.mes-hall↗

arXiv2004

High performance n-doped carbon nanotube field-effect transistors

We describe a robust technique for the fabrication of high performance vertically scaled n-doped field-effect transistors from large band gap carbon nanotubes. These devices have a tunable threshold voltage in the technologically relevant range (-1.3V < V_th < 0.5V) and can carry up to 5-6 muA of current in the on-state. We achieve such performance by exposure to potassium (K) vapor and device annealing in high vacuum. The treatment has a two-fold effect to: (i) controllably shift V_th toward negative gate biases via bulk doping of the nanotube (up to about 0.6e/nm), and (ii) increase the on-current by 1-2 orders of magnitude. This current enhancement is achieved by lowering external device resistance due to more intimate contact between K metal and doped nanotube channel in addition to potential reduction of the Schottky barrier height at the contact.

cond-mat.mtrl-sci↗

arXiv2003

Electrostatic Engineering of Nanotube Transistors for Improved Performance

With decreasing device dimensions, the performance of carbon nanotube field-effect transistors (CNFETs) is limited by high Off currents except at low drain voltages. We show that an asymmetric design improves the performance, reducing Off currents and extending the usable range of drain voltage. The improvement is most dramatic for ambipolar Schottky-barrier CNFETs. Moreover, this approach allows a single device to exhibit equally good performance as an n- or p-type transistor, by changing only the sign of the drain voltage. Even for CNFETs having ohmic contacts, an asymmetric design can greatly improve the performance for small-bandgap nanotubes.

cond-mat↗

arXiv2003

Lateral scaling in carbon nanotube field-effect transistors

We have fabricated carbon nanotube (CN) field-effect transistors with multiple, individually addressable gate segments. The devices exhibit markedly different transistor characteristics when switched using gate segments controlling the device interior versus those near the source and drain. We ascribe this difference to a change from Schottky barrier modulation at the contacts to bulk switching. We also find that the current through the bulk portion is independent of gate length for any gate voltage, offering direct evidence for ballistic transport in semiconducting CNs over at least a few hundred nanometers, even for relatively small carrier velocities.

cond-mat.mes-hall↗

arXiv2003

Drain Voltage Scaling in Carbon Nanotube Transistors

While decreasing the oxide thickness in carbon nanotube field-effect transistors (CNFETs) improves the turn-on behavior, we demonstrate that this also requires scaling the range of the drain voltage. This scaling is needed to avoid an exponential increase in Off-current with drain voltage, due to modulation of the Schottky barriers at both the source and drain contact. We illustrate this with results for bottom-gated ambipolar CNFETs with oxides of 2 and 5 nm, and give an explicit scaling rule for the drain voltage. Above the drain voltage limit, the Off-current becomes large and has equal electron and hole contributions. This allows the recently reported light emission from appropriately biased CNFETs.

cond-mat.mes-hall↗

arXiv2003

Unexpected Scaling of the Performance of Carbon Nanotube Transistors

We show that carbon nanotube transistors exhibit scaling that is qualitatively different than conventional transistors. The performance depends in an unexpected way on both the thickness and the dielectric constant of the gate oxide. Experimental measurements and theoretical calculations provide a consistent understanding of the scaling, which reflects the very different device physics of a Schottky barrier transistor with a quasi-one-dimensional channel contacting a sharp edge. A simple analytic model gives explicit scaling expressions for key device parameters such as subthreshold slope, turn-on voltage, and transconductance.

cond-mat.mtrl-sci↗

arXiv2002

Carbon Nanotubes as Schottky Barrier Transistors

We show that carbon nanotube transistors operate as unconventional "Schottky barrier transistors", in which transistor action occurs primarily by varying the contact resistance rather than the channel conductance. Transistor characteristics are calculated for both idealized and realistic geometries, and scaling behavior is demonstrated. Our results explain a variety of experimental observations, including the quite different effects of doping and adsorbed gases. The electrode geometry is shown to be crucial for good device performance.

cond-mat.mtrl-sci↗

arXiv2000

Intertube coupling in ropes of single-wall carbon nanotubes

We investigate the coupling between individual tubes in a rope of single-wall carbon nanotubes using four probe resistance measurements. By introducing defects through the controlled sputtering of the rope we generate a strong non-monotonic temperature dependence of the four terminal resistance. This behavior reflects the interplay between localization in the intentionally damaged tubes and coupling to undamaged tubes in the same rope. Using a simple model we obtain the coherence length and the coupling resistance. The coupling mechanism is argued to involve direct tunneling between tubes.

cond-mat.mes-hall↗

arXiv1999

Conductance of Distorted Carbon Nanotubes

We have calculated the effects of structural distortions of armchair carbon nanotubes on their electrical transport properties. We found that the bending of the nanotubes decreases their transmission function in certain energy ranges and leads to an increased electrical resistance. Electronic structure calculations show that these energy ranges contain localized states with significant $σ$-$π$ hybridization resulting from the increased curvature produced by bending. Our calculations of the contact resistance show that the large contact resistances observed for SWNTs are likely due to the weak coupling of the NT to the metal in side bonded NT-metal configurations.

cond-mat.mes-hall↗