arXiv subjects

Ph. Lecoeur

Publications and source records attributed to Ph. Lecoeur.

23 records · Page 2Linked to original sources

arXiv2011

Step velocity tuning of SrRuO3 step flow growth on SrTiO3

Taking advantage of vicinal (001) SrTiO3 substrates with different mean terrace widths, the heteroepitaxial growth of SrRuO3 in the step flow mode has been mapped as a function of mean step velocity. Transition between stable and unstable step flow is shown to occur at a well-defined critical step velocity, with a step bunching instability observed below this threshold. The ability to pass from unstable to stable step flow during growth upon increasing the mean step velocity is demonstrated. This result is discussed in terms of a stress-based driving force for step bunching in competition with an effective step-up adatom current.

cond-mat.mtrl-sci↗

arXiv2006

Domain wall magnetoresistance in a nanopatterned La(2/3)Sr(1/3)MnO3 track

We have measured the contribution of magnetic domain walls (DWs) to the electric resistance in epitaxial manganite films patterned by electron-beam lithography into a track containing a set of notches. We find a DW resistance-area (RA) product of ~2.5 10^(-13) Ohm/m^2 at low temperature and bias, which is several orders of magnitude larger than the values reported for 3d ferromagnets. However, the current-voltage characteristics are highly linear which indicates that the DWs are not phase separated but metallic. The DWRA is found to increase upon increasing the injected current, presumably reflecting some deformation of the wall by spin-transfer. When increasing temperature, the DWRA vanishes at ~225K which is likely related to the temperature dependence of the film anisotropy.

cond-mat.str-el↗

arXiv2001

Colossal magnetoresistive manganite thin films

Mixed-valence perovskite manganites (Re$_{1-x}$A$_{x}$MnO$_{3}$ where Re=rare earth, A=alkaline earth) provide a unique opportunity to study the relationships between the structure and the magnetotransport properties due to an interplay among charge carriers, magnetic coupling, orbital ordering and structural distortion. This makes these compounds very exciting from both the basic research and from the technological view point. As the technology pursued with these materials requires film growth, extensive studies have been made on materials synthesis, structural and physical characterization and device fabrication. In this article, the results of the different experimental techniques and the effects of the deposition procedure of the manganite thin films are first reviewed. Second, the relation between the structural and the physical properties mentioned, and the influence of strains discussed.\ Finally, possible applications of manganite thin films for spin electronics are presented.

cond-mat.mtrl-sci↗

arXiv2001

Stress-induced metallic behavior under magnetic field in Pr$_{1-x}$Ca$_{x}$MnO$_{3}$ (x = 0.5 and 0.4) thin films

We have investigated the role of the stress-induced by the presence of the substrate in thin films of colossal magnetoresistive manganites on structural, resistive and magnetic properties. Because of the strong coupling between the small structural distortions related to the charge-ordering (CO) and the resistive properties, the presence of the substrate prevents the full developpement of the charge ordering in Pr$_{0.5}$Ca$_{0.5}$MnO$_{3}$, especially in the very thin films. For thicker films, the CO state exists, but is not fully developped. Correlatively, the magnetic field which is necessary to suppress the CO is decreased drastically from 25 Tesla to about 5 Tesla on SrTiO$_{3}$ substrates. We have also investigated the influence of the doping level by studying the case of Pr$_{0.6}$Ca$_{0.4}$MnO$_{3}$.

cond-mat.mtrl-sci↗

arXiv2000

Spectacular decrease of the melting magnetic field in the charge-ordered state of tensile Pr0.5Ca0.5MnO3 films

An insulator to metal transition below 240K is induced by applying a 7T magnetic field in Pr0.5Ca0.5MnO3 thin films grown by the Pulsed Laser Deposition technique on (100) SrTiO3 substrates. This value of the melting magnetic field, much lower that the one required in bulk (20T), is assumed to be an effect of the tensile stress. These results confirm the importance of the bandwidth in the control of the physical properties of this compound and open the route to get colossal magnetoresistive properties by using strain effects.

cond-mat.mtrl-sci↗