arXiv subjects

Phaedon Avouris

Publications and source records attributed to Phaedon Avouris.

90 records · Page 5Linked to original sources

arXiv2006

Field-effect transistors assembled from functionalized carbon nanotubes

We have fabricated field effect transistors from carbon nanotubes using a novel selective placement scheme. We use carbon nanotubes that are covalently bound to molecules containing hydroxamic acid functionality. The functionalized nanotubes bind strongly to basic metal oxide surfaces, but not to silicon dioxide. Upon annealing, the functionalization is removed, restoring the electronic properties of the nanotubes. The devices we have fabricated show excellent electrical characteristics.

cond-mat.mtrl-sci↗

arXiv2006

Impact Excitation by Hot Carriers in Carbon Nanotubes

We investigate theoretically the efficiency of intra-molecular hot carrier induced impact ionization and excitation processes in carbon nanotubes. The electron confinement and reduced screening lead to drastically enhanced excitation efficiencies over those in bulk materials. Strong excitonic coupling favors neutral excitations over ionization, while the impact mechanism populates a different set of states than that produced by photoexcitation. The excitation rate is strongly affected by optical phonon excitation and a simple scaling of the rate with the field strength and optical phonon temperature is obtained.

cond-mat.str-el↗

arXiv2006

Tungsten oxide nanowire growth by chemically-induced strain

We have investigated the formation of tungsten oxide nanowires under different CVD conditions. We find that exposure of oxidized tungsten films to hydrogen and methane at 900C leads to the formation of a dense array of typically 10 nm diameter nanowires. Structural and chemical analysis shows that the wires are crystalline WO3. We propose a chemically-driven whisker growth mechanism in which interfacial strain associated with the formation of tungsten carbide stimulates nanowire growth. This might be a general concept, applicable also in other nanowire systems.

cond-mat.mtrl-sci↗

arXiv2006

Charge Transfer Induced Polarity Switching in Carbon Nanotube Transistors

We probed the charge transfer interaction between the amine-containing molecules: hydrazine, polyaniline and aminobutyl phosphonic acid, and carbon nanotube field effect transistors (CNTFETs). We successfully converted p-type CNTFETs to n-type and drastically improved the device performance in both the ON- and OFF- transistor states utilizing hydrazine as dopant. We effectively switched the transistor polarity between p- and n- type by accessing different oxidation states of polyaniline. We also demonstrated the flexibility of modulating the threshold voltage (Vth) of a CNTFET by engineering various charge-accepting and -donating groups in the same molecule.

cond-mat.mtrl-sci↗

arXiv2005

Low-frequency Current Fluctuations in Individual Semiconducting Single-Wall Carbon Nanotubes

We present a systematic study on low-frequency current fluctuations of nano-devices consisting of one single semiconducting nanotube, which exhibit significant 1/f-type noise. By examining devices with different switching mechanisms, carrier types (electrons vs. holes), and channel lengths, we show that the 1/f fluctuation level in semiconducting nanotubes is correlated to the total number of transport carriers present in the system. However, the 1/f noise level per carrier is not larger than that of most bulk conventional semiconductors, e.g. Si. The pronounced noise level observed in nanotube devices simply reflects on the small number of carriers involved in transport. These results not only provide the basis to quantify the noise behavior in a one-dimensional transport system, but also suggest a valuable way to characterize low-dimensional nanostructures based on the 1/f fluctuation phenomenon.

cond-mat.mtrl-sci↗

arXiv2005

Self-aligned carbon nanotube transistors with charge transfer doping

This letter reports a charge transfer p-doping scheme which utilizes one-electron oxidizing molecules to obtain stable, unipolar carbon nanotube transistors with a self-aligned gate structure. This doping scheme allows one to improve carrier injection, tune the threshold voltage Vth, and enhance the device performance in both the ON- and OFF- transistor states. Specifically, the nanotube transistor is converted from ambipolar to unipolar, the device drive current is increased by 2-3 orders of magnitude, the device OFF current is suppressed and an excellent Ion/Ioff ratio of six order of magnitude is obtained. The important role played by metal-nanotube contacts modification through charge transfer is demonstrated.

cond-mat.mtrl-sci↗

arXiv2005

Mobility in semiconducting carbon nanotubes at finite carrier density

Carbon nanotube field-effect transistors operate over a wide range of electron or hole density, controlled by the gate voltage. Here we calculate the mobility in semiconducting nanotubes as a function of carrier density and electric field, for different tube diameters and temperature. The low-field mobility is a non-monotonic function of carrier density, and varies by as much as a factor of 4 at room temperature. At low density, with increasing field the drift velocity reaches a maximum and then exhibits negative differential mobility, due to the non-parabolicity of the bandstructure. At a critical density $ρ_c\sim$ 0.35-0.5 electrons/nm, the drift velocity saturates at around one third of the Fermi velocity. Above $ρ_c$, the velocity increases with field strength with no apparent saturation.

cond-mat.mtrl-sci↗

arXiv2005

Radiative Lifetime of Excitons in Carbon Nanotubes

We calculate the radiative lifetime and energy bandstructure of excitons in semiconducting carbon nanotubes, within a tight-binding approach. In the limit of rapid interband thermalization, the radiative decay rate is maximized at intermediate temperatures, decreasing at low temperature because the lowest-energy excitons are optically forbidden. The intrinsic phonons cannot scatter excitons between optically active and forbidden bands, so sample-dependent extrinsic effects that break the symmetries can play a central role. We calculate the diameter-dependent energy splittings between singlet and triplet excitons of different symmetries, and the resulting dependence of radiative lifetime on temperature and tube diameter.

cond-mat.mtrl-sci↗

arXiv2005

Device modeling of long-channel nanotube electro-optical emitter

We present a simple analytic model of nanotube electro-optical emitters, along with improved experimental measurements using PMMA-passivated devices with reduced hysteresis. Both the ambipolar electrical characteristics and the motion of the infrared-emission spot are well described. The model indicates that the electric field is strongly enhanced at the emission spot, and that device performance can be greatly improved by the use of thinner gate oxides.

cond-mat.other↗

arXiv2005

High-Performance Carbon Nanotube Field-Effect Transistor with Tunable Polarities

State-of-the-art carbon nanotube field-effect transistors (CNFETs) behave as Schottky barrier (SB)-modulated transistors. It is known that vertical scaling of the gate oxide significantly improves the performance of these devices. However, decreasing the oxide thickness also results in pronounced ambipolar transistor characteristics and increased drain leakage currents. Using a novel device concept, we have fabricated high-performance, enhancement-mode CNFETs exhibiting n or p-type unipolar behavior, tunable by electrostatic and/or chemical doping, with excellent OFF-state performance and a steep subthreshold swing (S =63 mV/dec). The device design allows for aggressive oxide thickness and gate length scaling while maintaining the desired device characteristics.

cond-mat.mtrl-sci↗

arXiv2004

Exciton-phonon effects in carbon nanotube optical absorption

We find that the optical properties of carbon nanotubes reflect remarkably strong effects of exciton-phonon coupling. Tight-binding calculations show that a significant fraction of the spectral weight of the absorption peak is transferred to a distinct exciton+phonon sideband, which is peaked at around 200 meV above the main absorption peak. This sideband provides a distinctive signature of the excitonic character of the optical transition. The exciton-phonon coupling is reflected in a dynamical structural distortion, which contributes a binding energy of up to 100 meV. The distortion is surprisingly long-ranged, and is strongly dependent on chirality.

cond-mat.mtrl-sci↗

arXiv2004

Electron-phonon effects and transport in carbon nanotubes

We calculate the electron-phonon scattering and binding in semiconducting carbon nanotubes, within a tight binding model. The mobility is derived using a multi-band Boltzmann treatment. At high fields, the dominant scattering is inter-band scattering by LO phonons corresponding to the corners K of the graphene Brillouin zone. The drift velocity saturates at approximately half the graphene Fermi velocity. The calculated mobility as a function of temperature, electric field, and nanotube chirality are well reproduced by a simple interpolation formula. Polaronic binding give a band-gap renormalization of ~70 meV, an order of magnitude larger than expected. Coherence lengths can be quite long but are strongly energy dependent.

cond-mat.mtrl-sci↗

arXiv2004

Scaling of excitons in carbon nanotubes

Light emission from carbon nanotubes is expected to be dominated by excitonic recombination. Here we calculate the properties of excitons in nanotubes embedded in a dielectric, for a wide range of tube radii and dielectric environments. We find that simple scaling relationships give a good description of the binding energy, exciton size, and oscillator strength.

cond-mat.mtrl-sci↗

arXiv2001

Switching behavior of semiconducting carbon nanotubes under an external electric field

We investigate theoretically the switching characteristics of semiconducting carbon nanotubes connected to gold electrodes under an external (gate) electric field. We find that the external introduction of holes is necessary to account for the experimental observations. We identify metal-induced-gap states (MIGS) at the contacts and find that the MIGS of an undoped tube would not significantly affect the switching behavior, even for very short tube lengths. We also explore the miniaturization limits of nanotube transistors, and, on the basis of their switching ratio, we conclude that transistors with channels as short as 50Åwould have adequate switching characteristics.

cond-mat.mes-hall↗

arXiv2000

Electron Interference Effects on the Conductance of Doped Carbon Nanotubes

We investigate the effects of impurity scattering on the conductance of metallic carbon nanotubes as a function of the relative separation of the impurities. First we compute the conductance of a clean (6,6) tube, and the effect of model gold contacts on this conductance. Then, we compute the effect of introducing a single, two, and three oxygen atom impurities. We find that the conductance of a single-oxygen-doped (6,6) nanotube decreases by about 30 % with respect to that of the perfect nanotube. The presence of a second doping atom induces strong changes of the conductance which, however, depend very strongly on the relative position of the two oxygen atoms. We observe regular oscillations of the conductance that repeat over an O-O distance that corresponds to an integral number of half Fermi-wavelengths ($mλ_F/2$). These fluctuations reflect strong electron interference phenomena produced by electron scattering from the oxygen defects whose contribution to the resistance of the tube cannot be obtained by simply summing up their individual contributions.

cond-mat.mes-hall↗

arXiv1999

Conductance of Distorted Carbon Nanotubes

We have calculated the effects of structural distortions of armchair carbon nanotubes on their electrical transport properties. We found that the bending of the nanotubes decreases their transmission function in certain energy ranges and leads to an increased electrical resistance. Electronic structure calculations show that these energy ranges contain localized states with significant $σ$-$π$ hybridization resulting from the increased curvature produced by bending. Our calculations of the contact resistance show that the large contact resistances observed for SWNTs are likely due to the weak coupling of the NT to the metal in side bonded NT-metal configurations.

cond-mat.mes-hall↗

arXiv1998

The Effect of Structural Distortions on the Electronic Structure of Carbon Nanotubes

We calculated the effects of structural distortions on the electronic structure of carbon nanotubes. The key modification of the electronic structure brought about by bending a nanotube involves an increased mixing of $σ$ and $π$-states. This mixing leads to an enhanced density-of-states in the valence band near the Fermi energy region. While in a straight tube the states accessible for electrical conduction are essentially pure C($2p_π$)-states, they acquire significant C($2sp_σ$) character upon bending. Bending also leads to a charge polarization of the C-C bonds in the deformed region reminiscent of interface dipole formation. Scattering of conduction electrons at the distorted regions may lead to electron localization at low temperatures.

cond-mat.mtrl-sci↗

arXiv1998

The Effects of Finite Length on the Electronic Structure of Carbon Nanotubes

The electronic structure of finite-length armchair carbon nanotubes has been studied using several ab-initio and semi-empirical quantum computational techniques. The additional confinement of the electrons along the tube axis leads to the opening of a band-gap in short armchair tubes. The value of the band-gap decreases with increasing tube length, however, the decrease is not monotonic but shows a well defined oscillation in short tubes. This oscillation can be explained in terms of periodic changes in the bonding characteristics of the HOMO and LUMO orbitals of the tubes. Finite size graphene sheets are also found to have a finite band-gap, but no clear oscillation is observed. As the length of the tube increases the density of states (DOS) spectrum evolves from that characteristic of a zero-dimensional (0-D) system to that characteristic of a delocalized one-dimensional (1-D) system. This transformation appears to be complete already for tubes 5-10 nm long. The chemical stability of the nanotubes, expressed by the binding energy of a carbon atom, increases in a similar manner.

cond-mat.mtrl-sci↗