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Philip A. E. Murgatroyd

Publications and source records attributed to Philip A. E. Murgatroyd.

6 recordsLinked to original sources

Persistence of charge ordering instability to Coulomb engineering in the excitonic insulator candidate TiSe$_2$

TiSe$_2$ has long been considered one of the best candidate materials to host the elusive excitonic insulator (EI) phase. However, a finite coupling to the lattice can generically be expected, while a lack of "smoking-gun" signatures for the importance of the electron-hole interaction in driving the phase transition has rendered it challenging to distinguish the EI from the conventional charge-density-wave (CDW) phase. Here, we demonstrate a new approach, exploiting the susceptibility of excitons to dielectric screening. We combine mechanical exfoliation with molecular-beam epitaxy to fabricate ultra-clean van der Waals heterostructures of monolayer (ML-)TiSe$_2$/graphite and ML-TiSe$_2$/hBN. We observe how the modified substrate screening environment drives a renormalisation of the quasi-particle band gap of the TiSe$_2$ layer, signifying its susceptibility to Coloumb engineering. The temperature-dependent evolution of its electronic structure, however, remains unaffected, indicating that excitons are not required to drive the CDW transition in TiSe$_2$.

cond-mat.mtrl-sci↗

Dichotomy of electron-phonon interactions in the delafossite PdCoO$_2$: From weak bulk to polaronic surface coupling

The metallic delafossites host ultra-high mobility carriers in the bulk, while at their polar surfaces, intrinsic electronic reconstructions stabilise markedly distinct electronic phases, from charge-disproportionated insulators, to Rashba-split heavy-hole gases and ferromagnetic metals. The understanding of these phases has been strongly informed by surface spectroscopic measurements, but previous studies have been complicated by the presence of spatially varying terminations of the material surface. Here, we demonstrate the potential of microscopic-area angle-resolved photoemission to overcome these challenges. Our measurements of the model compound PdCoO$_2$ yield extremely high-quality spectra of the electronic structure, which allows us to place new experimental constraints on the weak electron-phonon coupling in the bulk of PdCoO$_2$, while revealing much stronger interactions at its surfaces. While the CoO$_2$-terminated surface exhibits a conventional weak-coupling behavior, our measurements reveal surprising spectroscopic signatures of polaron formation at the Pd-terminated surface, despite its pronounced metallicity. Together, our findings reveal how mode and symmetry-selective couplings can markedly tune the electron-phonon interactions in a single host material, here opening routes to stabilise surprisingly persistent polaronic quasiparticles.

cond-mat.mtrl-sci↗

Avoided metallicity in a hole-doped Mott insulator on a triangular lattice

Doping of a Mott insulator gives rise to a wide variety of exotic emergent states, from high-temperature superconductivity to charge, spin, and orbital orders. The physics underpinning their evolution is, however, poorly understood. A major challenge is the chemical complexity associated with traditional routes to doping. Here, we study the Mott insulating CrO$_2$ layer of the delafossite PdCrO$_2$, where an intrinsic polar catastrophe provides a clean route to doping of the surface. From scanning tunnelling microscopy and angle-resolved photoemission, we find that the surface stays insulating accompanied by a short-range ordered state. From density functional theory, we demonstrate how the formation of charge disproportionation results in an insulating ground state of the surface that is disparate from the hidden Mott insulator in the bulk. We demonstrate that voltage pulses induce local modifications to this state which relax over tens of minutes, pointing to a glassy nature of the charge order.

cond-mat.str-el↗

Spin-orbit coupling induced Van Hove singularity in proximity to a Lifshitz transition in Sr$_4$Ru$_3$O$_{10}$

Van Hove singularities (VHss) in the vicinity of the Fermi energy often play a dramatic role in the physics of strongly correlated electron materials. The divergence of the density of states generated by VHss can trigger the emergence of new phases such as superconductivity, ferromagnetism, metamagnetism, and density wave orders. A detailed understanding of the electronic structure of these VHss is therefore essential for an accurate description of such instabilities. Here, we study the low-energy electronic structure of the trilayer strontium ruthenate Sr$_4$Ru$_3$O$_{10}$, identifying a rich hierarchy of VHss using angle-resolved photoemission spectroscopy and millikelvin scanning tunneling microscopy. Comparison of $k$-resolved electron spectroscopy and quasiparticle interference allows us to determine the structure of the VHss and demonstrate the crucial role of spin-orbit coupling in shaping them. We use this to develop a minimal model from which we identify a new mechanism for driving a field-induced Lifshitz transition in ferromagnetic metals.

cond-mat.str-el↗

Hierarchy of Lifshitz transitions in the surface electronic structure of Sr$_2$RuO$_4$ under uniaxial compression

We report the evolution of the electronic structure at the surface of the layered perovskite Sr$_2$RuO$_4$ under large in-plane uniaxial compression, leading to anisotropic $B_{1g}$ strains of ${\varepsilon_{xx}-\varepsilon_{yy}=-0.9\pm0.1\%}$. From angle-resolved photoemission, we show how this drives a sequence of Lifshitz transitions, reshaping the low-energy electronic structure and the rich spectrum of van Hove singularities that the surface layer of Sr$_2$RuO$_4$ hosts. From comparison to tight-binding modelling, we find that the strain is accommodated predominantly by bond-length changes rather than modifications of octahedral tilt and rotation angles. Our study sheds new light on the nature of structural distortions at oxide surfaces, and how targeted control of these can be used to tune density of states singularities to the Fermi level, in turn paving the way to the possible realisation of rich collective states at the Sr$_2$RuO$_4$ surface.

cond-mat.str-el↗

Influence of Polymorphism on the Electronic Structure of Ga$_2$O$_3$

The search for new wide band gap materials is intensifying to satisfy the need for more advanced and energy efficient power electronic devices. Ga$_2$O$_3$ has emerged as an alternative to SiC and GaN, sparking a renewed interest in its fundamental properties beyond the main $β$-phase. Here, three polymorphs of Ga$_2$O$_3$, $α$, $β$ and $\varepsilon$, are investigated using X-ray diffraction, X-ray photoelectron and absorption spectroscopy, and ab initio theoretical approaches to gain insights into their structure - electronic structure relationships. Valence and conduction electronic structure as well as semi-core and core states are probed, providing a complete picture of the influence of local coordination environments on the electronic structure. State-of-the-art electronic structure theory, including all-electron density functional theory and many-body perturbation theory, provide detailed understanding of the spectroscopic results. The calculated spectra provide very accurate descriptions of all experimental spectra and additionally illuminate the origin of observed spectral features. This work provides a strong basis for the exploration of the Ga$_2$O$_3$ polymorphs as materials at the heart of future electronic device generations.

cond-mat.mtrl-sci↗