arXiv subjects

Philip Kim

Publications and source records attributed to Philip Kim.

At least 91 records · Page 5Linked to original sources

arXiv2019

Polariton Nanophotonics using Phase Change Materials

Polaritons formed by the coupling of light and material excitations such as plasmons, phonons, or excitons enable light-matter interactions at the nanoscale beyond what is currently possible with conventional optics. Recently, significant interest has been attracted by polaritons in van der Waals materials, which could lead to applications in sensing, integrated photonic circuits and detectors. However, novel techniques are required to control the propagation of polaritons at the nanoscale and to implement the first practical devices. Here we report the experimental realization of polariton refractive and meta-optics in the mid-infrared by exploiting the properties of low-loss phonon polaritons in isotopically pure hexagonal boron nitride (hBN), which allow it to interact with the surrounding dielectric environment comprising the low-loss phase change material, Ge$_3$Sb$_2$Te$_6$ (GST). We demonstrate waveguides which confine polaritons in a 1D geometry, and refractive optical elements such as lenses and prisms for phonon polaritons in hBN, which we characterize using scanning near field optical microscopy. Furthermore, we demonstrate metalenses, which allow for polariton wavefront engineering and sub-wavelength focusing. Our method, due to its sub-diffraction and planar nature, will enable the realization of programmable miniaturized integrated optoelectronic devices, and will lay the foundation for on-demand biosensors.

physics.app-ph↗

arXiv2019

Spin-polarized Correlated Insulator and Superconductor in Twisted Double Bilayer Graphene

Ferromagnetism and superconductivity typically compete with each other since the internal magnetic field generated in a magnet suppresses the formation of spin-singlet Cooper pairs in conventional superconductors. Only a handful of ferromagnetic superconductors are known in heavy fermion systems, where many-body electron interactions promoted by the narrow energy bands play a key role in stabilizing these emergent states. Recently, interaction-driven superconductivity and ferromagnetism have been demonstrated as separate phenomena in different density regimes of flat bands enabled by graphene moire superlattices. Combining superconductivity and magnetism in a single ground state may lead to more exotic quantum phases. Here, employing van der Waals heterostructures of twisted double bilayer graphene (TDBG), we realize a flat electron band that is tunable by perpendicular electric fields. Similar to the magic angle twisted bilayer graphene, TDBG exhibits energy gaps at the half and quarter filled flat bands, indicating the emergence of correlated insulating states. We find that the gaps of these insulating states increase with in-plane magnetic field, suggesting a ferromagnetic order. Upon doping the ferromagnetic half-filled insulator, superconductivity emerges with a critical temperature controlled by both density and electric fields. We observe that the in-plane magnetic field enhances the superconductivity in the low field regime, suggesting spin-polarized electron pairing. Spin-polarized superconducting states discovered in TDBG provide a new route to engineering interaction-driven topological superconductivity.

cond-mat.mes-hall↗

arXiv2018

Electrical control of interlayer exciton dynamics in atomically thin heterostructures

Excitons in semiconductors, bound pairs of excited electrons and holes, can form the basis for new classes of quantum optoelectronic devices. A van der Waals heterostructure built from atomically thin semiconducting transition metal dichalcogenides (TMDs) enables the formation of excitons from electrons and holes in distinct layers, producing interlayer excitons with large binding energy and a long lifetime. Employing heterostructures of monolayer TMDs, we realize optical and electrical generation of long-lived neutral and charged interlayer excitons. We demonstrate the transport of neutral interlayer excitons across the whole sample that can be controlled by excitation power and gate electrodes. We also realize the drift motion of charged interlayer excitons using Ohmic-contacted devices. The electrical generation and control of excitons provides a new route for realizing quantum manipulation of bosonic composite particles with complete electrical tunability.

cond-mat.mes-hall↗

arXiv2018

Interlayer fractional quantum Hall effect in a coupled graphene double-layer

In two-dimensional (2D) electron systems under strong magnetic fields, interactions can cause fractional quantum Hall (FQH) effects. Bringing two 2D conductors to proximity, a new set of correlated states can emerge due to interactions between electrons in the same and opposite layers. Here we report interlayer correlated FQH states in a system of two parallel graphene layers separated by a thin insulator. Current flow in one layer generates different quantized Hall signals in the two layers. This result is interpreted by composite fermion (CF) theory with different intralayer and interlayer Chern-Simons gauge-field coupling. We observe FQH states corresponding to integer values of CF Landau level (LL) filling in both layers, as well as "semi-quantized" states, where a full CF LL couples to a continuously varying partially filled CF LL. Remarkably, we also recognize a quantized state between two coupled half-filled CF LLs, attributable to an interlayer CF exciton condensate.

cond-mat.mes-hall↗

arXiv2018

Impact of geometry and non-idealities on electron 'optics' based graphene p-n junction devices

We articulate the challenges and opportunities of unconventional devices using the photon like flow of electrons in graphene, such as Graphene Klein Tunnel (GKT) transistors. The underlying physics is the employment of momentum rather than energy filtering to engineer a gate tunable transport gap in a 2D Dirac cone bandstructure. In the ballistic limit, we get a clean tunable gap that implies subthermal switching voltages below the Boltzmann limit, while maintaining a high saturating current in the output characteristic. In realistic structures, detailed numerical simulations and experiments show that momentum scattering, especially from the edges, bleeds leakage paths into the transport gap and turns it into a pseudogap. We quantify the importance of reducing edge roughness and overall geometry on the low-bias transfer characteristics of GKT transistors and benchmark against experimental data. We find that geometry plays a critical role in determining the performance of electron optics based devices that utilize angular resolution of electrons.

cond-mat.mes-hall↗

arXiv2018

Sign reversing Hall effect in atomically thin high temperature superconductors

We fabricate van der Waals heterostructure devices using few unit cell thick Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ for magnetotransport measurements. The superconducting transition temperature and carrier density in atomically thin samples can be maintained to close to that of the bulk samples. As in the bulk sample, the sign of the Hall conductivity is found to be opposite to the normal state near the transition temperature but with a drastic enlargement of the region of Hall sign reversal in the temperature-magnetic field phase diagram as the thickness of samples decreases. Quantitative analysis of the Hall sign reversal based on the excess charge density in the vortex core and superconducting fluctuations suggests a renormalized superconducting gap in atomically thin samples at the 2-dimensional limit.

cond-mat.supr-con↗

arXiv2018

Atomic and electronic reconstruction at van der Waals interface in twisted bilayer graphene

Control of the interlayer twist angle in two-dimensional (2D) van der Waals (vdW) heterostructures enables one to engineer a quasiperiodic moiré superlattice of tunable length scale. In twisted bilayer graphene (TBG), the simple moiré superlattice band description suggests that the electronic band width can be tuned to be comparable to the vdW interlayer interaction at a 'magic angle', exhibiting strongly correlated behavior. However, the vdW interlayer interaction can also cause significant structural reconstruction at the interface by favoring interlayer commensurability, which competes with the intralayer lattice distortion. Here we report the atomic scale reconstruction in TBG and its effect on the electronic structure. We find a gradual transition from incommensurate moiré structure to an array of commensurate domain structures as we decrease the twist angle across the characteristic crossover angle, $θ_c$ ~1°. In the twist regime smaller than $θ_c$ where the atomic and electronic reconstruction become significant, a simple moiré band description breaks down. Upon applying a transverse electric field, we observe electronic transport along the network of one-dimensional (1D) topological channels that surround the alternating triangular gapped domains, providing a new pathway to engineer the system with continuous tunability.

cond-mat.mtrl-sci↗

arXiv2018

Graphene Transistor Based on Tunable Dirac-Fermion-Optics

The linear energy-momentum dispersion, coupled with pseudo-spinors, makes graphene an ideal solid-state material platform to realize an electronic device based on Dirac-Fermionic relativistic quantum mechanics. Employing local gate control, several examples of electronic devices based on Dirac fermion dynamics have been demonstrated, including Klein tunneling, negative refraction and specular Andreev reflection. In this work, we present a quantum switch based on analogous Dirac-fermion-optics (DFO), in which the angle dependence of Klein tunneling is explicitly utilized to build tunable collimators and reflectors for the quantum wave function of Dirac fermions. We employ a novel dual-source design with a single flat reflector, which minimizes diffusive edge scattering and suppresses the background incoherent transmission. Our gate-tunable collimator-reflector device design enables measurement of the net DFO contribution in the switching device operation. We measure a full set of transmission coefficients of DFO wavefunction between multiple leads of the device, separating the classical contribution from that of any disorder in the channel. Since the DFO quantum switch demonstrated in this work requires no explicit energy gap, the switching operation is expected to be robust against thermal fluctuations and inhomogeneity length scales comparable to the Fermi wavelength. We find our quantum switch works at an elevated temperature up to 230 K and large bias current density up to 102 A/m, over a wide range of carrier densities. The tunable collimator-reflector coupled with the conjugated source electrodes developed in this work provides an additional component to build more efficient DFO electronic devices.

cond-mat.mes-hall↗

arXiv2018

Engineering Phonon Polaritons in van der Waals Heterostructures to Enhance In-Plane Optical Anisotropy

Van der Waals heterostructures assembled from layers of 2D materials have attracted considerable interest due to their novel optical and electrical properties. Here we report a scattering-type scanning near field optical microscopy study of hexagonal boron nitride on black phosphorous (h-BN/BP) heterostructures, demonstrating the first direct observation of in-plane anisotropic phonon polariton modes in vdW heterostructures. Strikingly, the measured in-plane optical anisotropy along armchair and zigzag crystal axes exceeds the ratio of refractive indices of BP in the x-y plane. We explain that this enhancement is due to the high confinement of the phonon polaritons in h-BN. We observe a maximum in-plane optical anisotropy of α_max=1.25 in the 1405-1440 cm-1 frequency spectrum. These results provide new insights on the behavior of polaritons in vdW heterostructures, and the observed anisotropy enhancement paves the way to novel nanophotonic devices and to a new way to characterize optical anisotropy in thin films.

physics.optics↗

arXiv2018

Measuring the Local Twist Angle and Layer Arrangement in Van der Waals Heterostructures

The properties of Van der Waals heterostructures are determined by the twist angle and the interface between adjacent layers as well as their polytype and stacking. Here we describe the use of spectroscopic Low Energy Electron Microscopy (LEEM) and micro Low Energy Electron Diffraction (μLEED) methods to measure these properties locally. We present results on a MoS$_{2}$/hBN heterostructure, but the methods are applicable to other materials. Diffraction spot analysis is used to assess the benefits of using hBN as a substrate. In addition, by making use of the broken rotational symmetry of the lattice, we determine the cleaving history of the MoS$_{2}$ flake, i.e., which layer stems from where in the bulk.

cond-mat.mtrl-sci↗

arXiv2018

Logarithmic singularities and quantum oscillations in magnetically doped topological insulators

We report magnetotransport measurements on magnetically doped (Bi,Sb)$_2$Te$_3$ films grown by molecular beam epitaxy. In Hallbar devices, logarithmic dependence on temperature and bias voltage are obseved in both the longitudinal and anomalous Hall resistance. The interplay of disorder and electron-electron interactions is found to explain quantitatively the observed logarithmic singularities and is a dominant scattering mechanism in these samples. Submicron scale devices exhibit intriguing quantum oscillations at high magnetic fields with dependence on bias voltage. The observed quantum oscillations can be attributed to bulk and surface transport.

cond-mat.str-el↗

arXiv2018

Dirac Electrons in a Dodecagonal Graphene Quasicrystal

Quantum states of quasiparticles in solids are dictated by symmetry. Thus, a discovery of unconventional symmetry can provide a new opportunity to reach a novel quantum state. Recently, Dirac and Weyl electrons have been observed in crystals with discrete translational symmetry. Here we experimentally demonstrate Dirac electrons in a two-dimensional quasicrystal without translational symmetry. A dodecagonal quasicrystal was realized by epitaxial growth of twisted bilayer graphene rotated exactly 30 degree. The graphene quasicrystal was grown up to a millimeter scale on SiC(0001) surface while maintaining the single rotation angle over an entire sample and was successfully isolated from a substrate, demonstrating its structural and chemical stability under ambient conditions. Multiple Dirac cone replicated with the 12-fold rotational symmetry were observed in angle resolved photoemission spectra, showing its unique electronic structures with anomalous strong interlayer coupling with quasi-periodicity. Our study provides a new way to explore physical properties of relativistic fermions with controllable quasicrystalline orders.

cond-mat.mes-hall↗

arXiv2018

Heterointerface effects in the electro-intercalation of van der Waals heterostructures

Molecular-scale manipulation of electronic/ionic charge accumulation in materials is a preeminent challenge, particularly in electrochemical energy storage. Layered van der Waals (vdW) crystals exemplify a diverse family of materials that permit ions to reversibly associate with a host atomic lattice by intercalation into interlamellar gaps. Motivated principally by the search for high-capacity battery anodes, ion intercalation in composite materials is a subject of intense study. Yet the precise role and ability of heterolayers to modify intercalation reactions remains elusive. Previous studies of vdW hybrids represented ensemble measurements at macroscopic films/powders, which do not permit the isolation and investigation of the chemistry at individual 2-dimensional (2D) interfaces. Here, we demonstrate the intercalation of lithium at the level of individual atomic interfaces of dissimilar vdW layers. Electrochemical devices based on vdW heterostructures comprised of deterministically stacked hexagonal boron nitride, graphene (G) and molybdenum dichalcogenide (MoX2; X = S, Se) layers are fabricated, enabling the direct resolution of intermediate stages in the intercalation of discrete heterointerfaces and the extent of charge transfer to individual layers. Operando magnetoresistance and optical spectroscopy coupled with low-temperature quantum magneto-oscillation measurements show that the creation of intimate vdW heterointerfaces between G and MoX2 engenders over 10-fold accumulation of charge in MoX2 compared to MoX2/MoX2 homointerfaces, while enforcing a more negative intercalation potential than that of bulk MoX2 by at least 0.5 V. Beyond energy storage, our new combined experimental and computational methodology to manipulate and characterize the electrochemical behavior of layered systems opens up new pathways to control the charge density in 2D (opto)electronic devices.

cond-mat.mtrl-sci↗

arXiv2017

Selective excitation and imaging of ultraslow phonon polaritons in thin hexagonal boron nitride crystals

Polaritons in 2D and van der Waals (vdW) materials have been investigated in several recent works as an innovative platform for light-matter interaction, rich of new physical phenomena.Hexagonal Boron Nitride (h-BN), in particular, is an out of plane anisotropic material (while it is in-plane isotropic) with two very strong phonon polaritons bands where the permittivity becomes negative. In the first restrahlen band (RS1, 780-830 cm-1) the relative out of plane permittivity is negative, while in the second restrahlen band (RS2, 1370-1610 cm-1) the relative in-plane permittivity is negative. Due to these optical properties, thin h-BN flakes support guided modes which have been observed experimentally both via far field and near field methods. In this work, we show how selectively excite the more confined modes in the RS1 and RS2 bands. The supported guided modes have phase and group velocities respectively tens and hundreds of times slower than the speed of light. We also show the possibility of full hyperspectral nano-imaging of modes in RS1 band by means of photo-induced force microscopy (PiFM). Moreover, a direct comparison of (PiFM) and scattering-type near-field microscopy (s-SNOM) is obtained by imaging the modes of the RS2 band with both techniques implemented on the same platform. The possibility of addressing ultraslow (ultraconfined) polaritonic modes of h-BN crystal flakes together with the possibility of optical nano-imaging in both the restrahlen bands have many innovative aspects that can lead to unprecedented schemes for strong light-matter interaction, slow and confined light.

physics.app-ph↗

arXiv2017

Tunneling Spectroscopy of Quantum Hall States in Bilayer Graphene PN Networks

Two dimensional electronic systems under strong magnetic field form quantum Hall (QH) edge states, which propagate along the boundary of a sample with a dissipationless current. Engineering the pathway of these propagating one-dimensional chiral modes enables the investigation of quantum tunneling between adjacent QH states. Here, we report tunneling transport in spatially controlled networks of QH edge states in bilayer graphene. We observe resonant tunneling between co-propagating QH edges across barriers formed by electrically defining incompressible strips. Employing spectroscopic tunneling measurements enable the direct probing of the spatial profile, density of states, and compressibility of the QH edge states with an unprecedented energy resolution. The capability to engineer the QH edge network provides an opportunity to build future quantum electronic devices supported by rich underline physics.

cond-mat.mes-hall↗

arXiv2017

Imaging electron flow from collimating contacts in graphene

The ballistic motion of electrons in graphene encapsulated in hexagonal boron nitride (hBN) promises exciting opportunities for electron-optics devices. A narrow electron beam is desired, with both the mean free path and coherence length exceeding the device size. One can form a collimating contact in graphene by adding zigzag contacts on either side of the electron emitter that absorb stray electrons to form a collimated electron beam [23]. Here we provide images of electron flow from a collimating contact that directly show the width and shape of the electron beam, obtained using a Scanning Gate Microscope (SGM) cooled to 4.2 K. The device is a hBN-encapsulated graphene hall bar with narrow side contacts on either side of the channel that have an electron emitter at the end and absorbing zig-zag contacts at both side. To form an image of electron flow, the SGM tip is raster scanned at a constant height above the sample surface while the transmission to a receiving contact on opposite sides of the channel is measured. By displaying the change ΔT vs. tip position, an image of ballistic flow is obtained. The angular width of the electron beam leaving the collimating contact is found by applying a perpendicular magnetic field B that bends electron paths into cyclotron orbits. SGM images reveal that electron flow from a collimating contact disappears quickly at B = 0.05T while the flow from a non-collimating contact persists up to B = 0.19 T. Ray tracing simulations agree well with the experimental images over a range of B and electron density n. By fitting the half-width at half-max (HWHM) of the magnitude of electron flow in the experimental SGM images, we find a narrow half angular width Δθ = 9.2° for the electron flow from the collimating contact, compared with a wide flow Δθ = 54° from the non-collimating contact.

cond-mat.mes-hall↗

arXiv2017

Controlled Electrochemical Intercalation of Graphene/h-BN van der Waals Heterostructures

Electrochemical intercalation is a powerful method for tuning the electronic properties of layered solids. In this work, we report an electro-chemical strategy to controllably intercalate lithium ions into a series of van der Waals (vdW) heterostructures built by sandwiching graphene between hexagonal boron nitride (h-BN). We demonstrate that encapsulating graphene with h-BN eliminates parasitic surface side reactions while simultaneously creating a new hetero-interface that permits intercalation between the atomically thin layers. To monitor the electrochemical process, we employ the Hall effect to precisely monitor the intercalation reaction. We also simultaneously probe the spectroscopic and electrical transport properties of the resulting intercalation compounds at different stages of intercalation. We achieve the highest carrier density $> 5 \times 10^{13} cm^{-2}$ with mobility $> 10^3 cm^2/(Vs)$ in the most heavily intercalated samples, where Shubnikov-de Haas quantum oscillations are observed at low temperatures. These results set the stage for further studies that employ intercalation in modifying properties of vdW heterostructures.

cond-mat.mes-hall↗

arXiv2017

Coulomb drag between carbon nanotube and graphene

We report the observation of Coulomb drag between a two-dimensional (2D) electron gas in graphene and a one-dimensional (1D) wire composed of a carbon nanotube. We find that drag occurs when the bulk of graphene is conducting, but is strongly suppressed in the quantum Hall regime when magnetic field confines conducting electrons to the edges of graphene and far from the nanotube. Out-of-equilibrium and non-linear drag measurements show intriguing interplay between 1D and 2D conductors. These hybrid electronic devices of novel geometry could lead to potential applications for Van der Waals electronics

cond-mat.mes-hall↗