arXiv subjects

Philip Kim

Publications and source records attributed to Philip Kim.

At least 145 records · Page 8Linked to original sources

arXiv2011

Visualizing Individual Nitrogen Dopants in Monolayer Graphene

In monolayer graphene, substitutional doping during growth can be used to alter its electronic properties. We used scanning tunneling microscopy (STM), Raman spectroscopy, x-ray spectroscopy, and first principles calculations to characterize individual nitrogen dopants in monolayer graphene grown on a copper substrate. Individual nitrogen atoms were incorporated as graphitic dopants, and a fraction of the extra electron on each nitrogen atom was delocalized into the graphene lattice. The electronic structure of nitrogen-doped graphene was strongly modified only within a few lattice spacings of the site of the nitrogen dopant. These findings show that chemical doping is a promising route to achieving high-quality graphene films with a large carrier concentration.

cond-mat.mtrl-sci↗

arXiv2011

Multiband Transport in Bilayer Graphene at High Carrier Densities

We report a multiband transport study of bilayer graphene at high carrier densities. Employing a poly(ethylene)oxide-CsClO$_4$ solid polymer electrolyte gate we demonstrate the filling of the high energy subbands in bilayer graphene samples at carrier densities $|n|\geq2.4\times 10^{13}$ cm$^{-2}$. We observe a sudden increase of resistance and the onset of a second family of Shubnikov de Haas (SdH) oscillations as these high energy subbands are populated. From simultaneous Hall and magnetoresistance measurements together with SdH oscillations in the multiband conduction regime, we deduce the carrier densities and mobilities for the higher energy bands separately and find the mobilities to be at least a factor of two higher than those in the low energy bands.

cond-mat.mes-hall↗

arXiv2011

Bolometric and non-bolometric radio frequency detection in a metallic single-walled carbon nanotube

We characterize radio frequency detection in a high-quality metallic single-walled carbon nanotube. At a bath temperature of 77 K, only bolometric (thermal) detection is seen. At a bath temperature of 4.2 K and low bias current, the response is due instead to the electrical nonlinearity of the non-ohmic contacts. At higher bias currents, the contacts recover ohmic behavior and the observed response agrees well with the calculated bolometric responsivity. The bolometric response is expected to operate at terahertz frequencies, and we discuss some of the practical issues associated with developing high frequency detectors based on carbon nanotubes.

cond-mat.mes-hall↗

arXiv2011

Making ARPES Measurements on Corrugated Monolayer Crystals: Suspended Exfoliated Single-Crystal Graphene

Free-standing exfoliated monolayer graphene is an ultra-thin flexible membrane, which exhibits out of plane deformation or corrugation. In this paper, a technique is described to measure the band structure of such free-standing graphene by angle-resolved photoemission. Our results show that photoelectron coherence is limited by the crystal corrugation. However, by combining surface morphology measurements of the graphene roughness with angle-resolved photoemission, energy dependent quasiparticle lifetime and bandstructure measurements can be extracted. Our measurements rely on our development of an analytical formulation for relating the crystal corrugation to the photoemission linewidth. Our ARPES measurements show that, despite significant deviation from planarity of the crystal, the electronic structure of exfoliated suspended graphene is nearly that of ideal, undoped graphene; we measure the Dirac point to be within 25 meV of $E_F$ . Further, we show that suspended graphene behaves as a marginal Fermi-liquid, with a quasiparticle lifetime which scales as $(E - E_F)^{-1}$; comparison with other graphene and graphite data is discussed.

cond-mat.mtrl-sci↗

arXiv2011

Measurement of the ν= 1/3 fractional quantum Hall energy gap in suspended graphene

We report on magnetotransport measurements of multi-terminal suspended graphene devices. Fully developed integer quantum Hall states appear in magnetic fields as low as 2 T. At higher fields the formation of longitudinal resistance minima and transverse resistance plateaus are seen corresponding to fractional quantum Hall states, most strongly for ν= 1/3. By measuring the temperature dependence of these resistance minima, the energy gap for the 1/3 fractional state in graphene is determined to be at ~20 K at 14 T.

cond-mat.mes-hall↗

arXiv2010

Radio frequency electrical transduction of graphene mechanical resonators

We report radio frequency (rf) electrical readout of graphene mechanical resonators. The mechanical motion is actuated and detected directly by using a vector network analyzer, employing a local gate to minimize parasitic capacitance. A resist-free doubly clamped sample with resonant frequency ~ 34 MHz, quality factor ~ 10000 at 77 K, and signal-to-background ratio of over 20 dB is demonstrated. In addition to being over two orders of magnitude faster than the electrical rf mixing method, this technique paves the way for use of graphene in rf devices such as filters and oscillators.

cond-mat.mes-hall↗

arXiv2010

Atmospheric Oxygen Binding and Hole Doping in Deformed Graphene on a SiO2 Substrate

Using micro-Raman spectroscopy and scanning tunneling microscopy, we study the relationship between structural distortion and electrical hole doping of graphene on a silicon dioxide substrate. The observed upshift of the Raman G band represents charge doping and not compressive strain. Two independent factors control the doping: (1) the degree of graphene coupling to the substrate, and (2) exposure to oxygen and moisture. Thermal annealing induces a pronounced structural distortion due to close coupling to SiO2 and activates the ability of diatomic oxygen to accept charge from graphene. Gas flow experiments show that dry oxygen reversibly dopes graphene; doping becomes stronger and more irreversible in the presence of moisture and over long periods of time. We propose that oxygen molecular anions are stabilized by water solvation and electrostatic binding to the silicon dioxide surface.

cond-mat.mtrl-sci↗

arXiv2010

Energy loss of the electron system in individual single-walled carbon nanotubes

We characterize the energy loss of the non-equilibrium electron system in individual metallic single-walled carbon nanotubes at low temperature. Using Johnson noise thermometry, we demonstrate that, for a nanotube with ohmic contacts, the dc resistance at finite bias current directly reflects the average electron temperature. This enables a straightforward determination of the thermal conductance associated with cooling of the nanotube electron system. In analyzing the temperature- and length-dependence of the thermal conductance, we consider contributions from acoustic phonon emission, optical phonon emission, and hot electron outdiffusion.

cond-mat.mes-hall↗

arXiv2010

Controlling electron-phonon interactions in graphene at ultra high carrier densities

We report on the temperature dependent electron transport in graphene at different carrier densities $n$. Employing an electrolytic gate, we demonstrate that $n$ can be adjusted up to 4$\times10^{14}$cm$^{-2}$ for both electrons and holes. The measured sample resistivity $ρ$ increases linearly with temperature $T$ in the high temperature limit, indicating that a quasi-classical phonon distribution is responsible for the electron scattering. As $T$ decreases, the resistivity decreases more rapidly following $ρ(T) \sim T^{4}$. This low temperature behavior can be described by a Bloch-Grüneisen model taking into account the quantum distribution of the 2-dimensional acoustic phonons in graphene. We map out the density dependence of the characteristic temperature $Θ_{BG}$ defining the cross-over between the two distinct regimes, and show, that for all $n$, $ρ(T)$ scales as a universal function of the normalized temperature $T/Θ_{BG}$.

cond-mat.mes-hall↗

arXiv2010

Electron and optical phonon temperatures in electrically biased graphene

We examine the intrinsic energy dissipation steps in electrically biased graphene channels. By combining in-situ measurements of the spontaneous optical emission with a Raman spectroscopy study of the graphene sample under conditions of current flow, we obtain independent information on the energy distribution of the electrons and phonons. The electrons and holes contributing to light emission are found to obey a thermal distribution, with temperatures in excess of 1500 K in the regime of current saturation. The zone-center optical phonons are also highly excited and are found to be in equilibrium with the electrons. For a given optical phonon temperature, the anharmonic downshift of the Raman G-mode is smaller than expected under equilibrium conditions, suggesting that the electrons and high-energy optical phonons are not fully equilibrated with all of the phonon modes.

cond-mat.mes-hall↗

arXiv2010

Landau Level Collapse in Gated Graphene Structures

We describe a new regime of magnetotransport in two dimensional electron systems in the presence of a narrow potential barrier imposed by external gates. In such systems, the Landau level states, confined to the barrier region in strong magnetic fields, undergo a deconfinement transition as the field is lowered. We present transport measurements showing Shubnikov-de Haas (SdH) oscillations which, in the unipolar regime, abruptly disappear when the strength of the magnetic field is reduced below a certain critical value. This behavior is explained by a semiclassical analysis of the transformation of closed cyclotron orbits into open, deconfined trajectories. Comparison to SdH-type resonances in the local density of states is presented.

cond-mat.mes-hall↗

arXiv2009

Electron Transport in Disordered Graphene Nanoribbons

We report an electron transport study of lithographically fabricated graphene nanoribbons of various widths and lengths at different temperatures. At the charge neutrality point, a length-independent transport gap forms whose size is inversely proportional to the width. In this gap, electron is localized, and charge transport exhibits a transition between simple thermally activated behavior at higher temperatures and a variable range hopping at lower temperatures. By varying the geometric capacitance through the addition of top gates, we find that charging effects constitute a significant portion of the activation energy.

cond-mat.mes-hall↗

arXiv2009

Observation of the Fractional Quantum Hall Effect in Graphene

When electrons are confined in two dimensions and subjected to strong magnetic fields, the Coulomb interactions between them become dominant and can lead to novel states of matter such as fractional quantum Hall liquids. In these liquids electrons linked to magnetic flux quanta form complex composite quasipartices, which are manifested in the quantization of the Hall conductivity as rational fractions of the conductance quantum. The recent experimental discovery of an anomalous integer quantum Hall effect in graphene has opened up a new avenue in the study of correlated 2D electronic systems, in which the interacting electron wavefunctions are those of massless chiral fermions. However, due to the prevailing disorder, graphene has thus far exhibited only weak signatures of correlated electron phenomena, despite concerted experimental efforts and intense theoretical interest. Here, we report the observation of the fractional quantum Hall effect in ultraclean suspended graphene, supporting the existence of strongly correlated electron states in the presence of a magnetic field. In addition, at low carrier density graphene becomes an insulator with an energy gap tunable by magnetic field. These newly discovered quantum states offer the opportunity to study a new state of matter of strongly correlated Dirac fermions in the presence of large magnetic fields.

cond-mat.mes-hall↗

arXiv2009

Tuning the graphene work function by electric field effect

We report variation of the work function for single and bi-layer graphene devices measured by scanning Kelvin probe microscopy (SKPM). Using the electric field effect, the work function of graphene can be adjusted as the gate voltage tunes the Fermi level across the charge neutrality point. Upon biasing the device, the surface potential map obtained by SKPM provides a reliable way to measure the contact resistance of individual electrodes contacting graphene.

cond-mat.mes-hall↗

arXiv2009

Performance of Monolayer Graphene Nanomechanical Resonators with Electrical Readout

The enormous stiffness and low density of graphene make it an ideal material for nanoelectromechanical (NEMS) applications. We demonstrate fabrication and electrical readout of monolayer graphene resonators, and test their response to changes in mass and temperature. The devices show resonances in the MHz range. The strong dependence of the resonant frequency on applied gate voltage can be fit to a membrane model, which yields the mass density and built-in strain. Upon removal and addition of mass, we observe changes in both the density and the strain, indicating that adsorbates impart tension to the graphene. Upon cooling, the frequency increases; the shift rate can be used to measure the unusual negative thermal expansion coefficient of graphene. The quality factor increases with decreasing temperature, reaching ~10,000 at 5 K. By establishing many of the basic attributes of monolayer graphene resonators, these studies lay the groundwork for applications, including high-sensitivity mass detectors.

cond-mat.mes-hall↗

arXiv2009

Thermal Probing of Energy Dissipation in Current-Carrying Carbon Nanotubes

The temperature distributions in current-carrying carbon nanotubes have been measured with a scanning thermal microscope. The obtained temperature profiles reveal diffusive and dissipative electron transport in multi-walled nanotubes and in single-walled nanotubes when the voltage bias was higher than the 0.1-0.2 eV optical phonon energy. Over ninety percent of the Joule heat in a multi-walled nanotube was found to be conducted along the nanotube to the two metal contacts. In comparison, about eighty percent of the Joule heat was transferred directly across the nanotube-substrate interface for single-walled nanotubes. The average temperature rise in the nanotubes is determined to be in the range of 5 to 42 K per micro watt Joule heat dissipation in the nanotubes.

cond-mat.mes-hall↗

arXiv2008

Thermoelectric and Magnetothermoelectric Transport Measurements of Graphene

The conductance and thermoelectric power (TEP) of graphene is simultaneously measured using microfabricated heater and thermometer electrodes. The sign of the TEP changes across the charge neutrality point as the majority carrier density switches from electron to hole. The gate dependent conductance and TEP exhibit a quantitative agreement with the semiclassical Mott relation. In the quantum Hall regime at high magnetic field, quantized thermopower and Nernst signals are observed and are also in agreement with the generalized Mott relation, except for strong deviations near the charge neutrality point.

cond-mat.mes-hall↗

arXiv2008

Quantum interference and Klein tunneling in graphene heterojunctions

The observation of quantum conductance oscillations in mesoscopic systems has traditionally required the confinement of the carriers to a phase space of reduced dimensionality. While electron optics such as lensing and focusing have been demonstrated experimentally, building a collimated electron interferometer in two unconfined dimensions has remained a challenge due to the difficulty of creating electrostatic barriers that are sharp on the order of the electron wavelength. Here, we report the observation of conductance oscillations in extremely narrow graphene heterostructures where a resonant cavity is formed between two electrostatically created bipolar junctions. Analysis of the oscillations confirms that p-n junctions have a collimating effect on ballistically transmitted carriers. The phase shift observed in the conductance fringes at low magnetic fields is a signature of the perfect transmission of carriers normally incident on the junctions and thus constitutes a direct experimental observation of ``Klein Tunneling.''

cond-mat.mes-hall↗