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Philipp Moser

Publications and source records attributed to Philipp Moser.

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Autoregressive deep learning for real-time simulation of soft tissue dynamics during virtual neurosurgery

Accurate simulation of brain deformation is a key component for developing realistic, interactive neurosurgical simulators, as complex nonlinear deformations must be captured to ensure realistic tool-tissue interactions. However, traditional numerical solvers often fall short in meeting real-time performance requirements. To overcome this, we introduce a deep learning-based surrogate model that efficiently simulates transient brain deformation caused by continuous interactions between surgical instruments and the virtual brain geometry. Building on Universal Physics Transformers, our approach operates directly on large-scale mesh data and is trained on an extensive dataset generated from nonlinear finite element simulations, covering a broad spectrum of temporal instrument-tissue interaction scenarios. To reduce the accumulation of errors in autoregressive inference, we propose a stochastic teacher forcing strategy applied during model training. Specifically, training consists of short stochastic rollouts in which the proportion of ground truth inputs is gradually decreased in favor of model-generated predictions. Our results show that the proposed surrogate model achieves accurate and efficient predictions across a range of transient brain deformation scenarios, scaling to meshes with up to 150,000 nodes. The introduced stochastic teacher forcing technique substantially improves long-term rollout stability, reducing the maximum prediction error from 6.7 mm to 3.5 mm. We further integrate the trained surrogate model into an interactive neurosurgical simulation environment, achieving runtimes below 10 ms per simulation step on consumer-grade inference hardware. Our proposed deep learning framework enables rapid, smooth and accurate biomechanical simulations of dynamic brain tissue deformation, laying the foundation for realistic surgical training environments.

cs.LG

The Role of Quantum in Hybrid Quantum-Classical Neural Networks: A Realistic Assessment

Quantum machine learning has emerged as a promising application domain for near-term quantum hardware, particularly through hybrid quantum-classical models that leverage both classical and quantum processing. Although numerous hybrid architectures have been proposed and demonstrated successfully on benchmark tasks, a significant open question remains regarding the specific contribution of quantum components to the overall performance of these models. In this work, we aim to shed light on the impact of quantum processing within hybrid quantum-classical neural network architectures through a rigorous statistical study. We systematically assess common hybrid models on medical signal data as well as planar and volumetric images, examining the influence attributable to classical and quantum aspects such as encoding schemes, entanglement, and circuit size. We find that in best-case scenarios, hybrid models show performance comparable to their classical counterparts, however, in most cases, performance metrics deteriorate under the influence of quantum components. Our multi-modal analysis provides realistic insights into the contributions of quantum components and advocates for cautious claims and design choices for hybrid models in near-term applications.

quant-ph

Atomically Flat Dielectric Patterns for Band Gap Engineering and Lateral Junction Formation in MoSe$_2$ Monolayers

Combining a precise sputter etching method with subsequent AlO$_x$ growth within an atomic layer deposition chamber enables fabrication of atomically flat lateral patterns of SiO$_2$ and AlO$_x$. The transfer of MoSe$_2$ monolayers onto these dielectrically modulated substrates results in formation of lateral heterojunctions, with the flat substrate topography leading to minimal strain across the junction. Kelvin probe force microscopy (KPFM) measurements show significant variations in the contact potential difference (CPD) across the interface, with AlO$_x$ regions inducing a 230~mV increase in CPD. Spatially resolved photoluminescence spectroscopy reveals shifts in spectral weight of neutral and charged exciton species across the different dielectric regions. On the AlO$_x$ side, the Fermi energy moves closer to the conduction band, leading to a higher trion-to-exciton ratio, indicating a bandgap shift consistent with CPD changes. In addition, transient reflection spectroscopy highlights the influence of the dielectric environment on carrier dynamics, with the SiO$_2$ side exhibiting rapid carrier decay typical of neutral exciton recombination. In contrast, the AlO$_x$ side shows slower, mixed decay behavior consistent with conversion of trions back into excitons. These results demonstrate how dielectric substrate engineering can tune the electronic and optical characteristics of proximal two-dimensional materials, allowing scalable fabrication of advanced junctions for novel (opto)electronics applications.

cond-mat.mtrl-sci

Rapid spin depolarization in the layered 2D Ruddlesden Popper perovskite (BA)(MA)PbI

We report temperature-dependent spectroscopy on the layered (n=4) two-dimensional (2D) Ruddlesden-Popper perovskite (BA)(MA)PbI. Helicity-resolved steady-state photoluminescence (PL) reveals no optical degree of polarization. Time-resolved PL shows a photocarrier lifetime on the order of nanoseconds. From simultaneaously recorded time-resolved differential reflectivity (TR$\Delta$R) and time-resolved Kerr ellipticity (TRKE), a photocarrier lifetime of a few nanoseconds and a spin dephasing time on the order of picoseconds was found. This stark contrast in lifetimes clearly explains the lack of spin polarization in steady-state PL. While we observe clear temperature-dependent effects on the PL dynamics that can be related to structural dynamics, the spin dephasing is nearly T-independent. Our results highlight that spin dephasing in 2D (BA)(MA)PbI occurs at time scales faster than the exciton recombination time, which poses a bottleneck for applications aimingto utilize this degree of freedom.

cond-mat.mes-hall

Magnetic proximity effect on excitonic spin states in Mn-doped layered hybrid perovskites

Materials combining the optoelectronic functionalities of semiconductors with control of the spin degree of freedom are highly sought after for the advancement of quantum technology devices. Here, we report the paramagnetic Ruddlesden-Popper hybrid perovskite Mn:(PEA)2PbI4 (PEA = phenethylammonium) in which the interaction of isolated Mn2+ ions with magnetically brightened excitons leads to circularly polarized photoluminescence. Using a combination of superconducting quantum interference device (SQUID) magnetometry and magneto-optical experiments, we find that the Brillouin-shaped polarization curve of the photoluminescence follows the magnetization of the material. This indicates coupling between localized manganese magnetic moments and exciton spins via a magnetic proximity effect. The saturation polarization of 15% at 4 K and 6 T indicates a highly imbalanced spin population and demonstrates that manganese doping enables efficient control of excitonic spin states in Ruddlesden-Popper perovskites. Our finding constitutes the first example of polarization control in magnetically doped hybrid perovskites and will stimulate research on this highly tuneable material platform that promises tailored interactions between magnetic moments and electronic states.

cond-mat.mtrl-sci