arXiv subjects

Pierre Darancet

Publications and source records attributed to Pierre Darancet.

26 records · Page 2Linked to original sources

arXiv2014

Three Dimensional Metallic and Two Dimensional Insulating Behavior in Tantalum Dichalcogenides

Using density functional theory with added on-site interactions (DFT+U), we study the electronic structure of bulk, monolayer, and bilayer of the layered transition-metal dichalcogenide $1T-TaS_2$. We show that a two-dimensional spin--$\frac{1}{2}$ Mott-phase exists for the monolayer in the charge-density wave state (CDW) and that such a phase is systematically destroyed by packing of the distorted layers leading to a one dimensional metal for bulk, CDW-distorted TaS$_2$. The latter finding is in contrast with previous DMFT predictions --disagreement we explain by the weak effective interaction felt by the electrons in the CDW state. Experimental observations of insulating behavior may arise from disorder due to stacking faults.

cond-mat.mtrl-sci↗

arXiv2012

Quantitative Current-Voltage Characteristics in Molecular Junctions from First Principles

Using self-energy-corrected density functional theory (DFT) and a coherent scattering-state approach, we explain current-voltage (IV) measurements of four pyridine-Au and amine-Au linked molecular junctions with quantitative accuracy. Parameter-free many-electron self-energy corrections to DFT Kohn-Sham eigenvalues are demonstrated to lead to excellent agreement with experiments at finite bias, improving upon order-of-magnitude errors in currents obtained with standard DFT approaches. We further propose an approximate route for prediction of quantitative IV characteristics for both symmetric and asymmetric molecular junctions based on linear response theory and knowledge of the Stark shifts of junction resonance energies. Our work demonstrates that a quantitative, computationally inexpensive description of coherent transport in molecular junctions is readily achievable, enabling new understanding and control of charge transport properties of molecular-scale interfaces at large bias voltages.

cond-mat.mes-hall↗

arXiv2011

Electronic energy level alignment at metal-molecule interfaces with a GW approach

Using density functional theory and many-body perturbation theory within a GW approximation, we calculate the electronic structure of a metal-molecule interface consisting of benzene diamine (BDA) adsorbed on Au(111). Through direct comparison with photoemission data, we show that a conventional G$_0$W$_0$ approach can underestimate the energy of the adsorbed molecular resonance relative to the Au Fermi level by up to 0.8 eV. The source of this discrepancy is twofold: a 0.7 eV underestimate of the gas phase ionization energy (IE), and a 0.2 eV overestimate of the Au work function. Refinements to self-energy calculations within the GW framework that account for deviations in both the Au work function and BDA gas-phase IE can result in an interfacial electronic level alignment in quantitative agreement with experiment.

cond-mat.mtrl-sci↗

arXiv2010

Quantum transport through resistive nanocontacts: Effective one-dimensional theory and conductance formulas for non-ballistic leads

We introduce a new quantum transport formalism based on a map of a real 3-dimensional lead-conductor-lead system into an effective 1-dimensional system. The resulting effective 1D theory is an in principle exact formalism to calculate the conductance. Besides being more efficient than the principal layers approach, it naturally leads to a 5-partitioned workbench (instead of 3) where each part of the device (the true central device, the ballistic and the non-ballistic leads) is explicitely treated, allowing better physical insight into the contact resistance mechanisms. Independently, we derive a generalized Fisher-Lee formula and a generalized Meir-Wingreen formula for the correlated and uncorrelated conductance and current of the system where the initial restrictions to ballistic leads are generalized to the case of resistive contacts. We present an application to graphene nanoribbons.

cond-mat.other↗

arXiv2008

Coherent electronic transport through graphene constrictions: sub-wavelength regime and optical analogies

Graphene two-dimensional nature combined with today lithography allows to achieve nanoelectronics devices smaller than the Dirac electrons wavelength. Here we show that in these graphene subwavelength nanodevices the electronic quantum transport properties present deep analogies with classical phenomena of subwavelength optics. By introducing the concept of electronic diffraction barrier to represent the effect of constrictions, we can easily describe the rich transport physics in a wealth of nanodevices: from Bethe and Kirchhoff diffraction in graphene slits, to Fabry-Perot interference oscillations in nanoribbons. The same concept applies to graphene quantum dots and gives new insigth into recent experiments on these systems.

cond-mat.mes-hall↗

arXiv2008

Graphene nanodevices: bridging nanoelectronics and subwavelength optics

The unconventional properties of graphene, with a massless Dirac band dispersion and large coherence properties, have raised a large interest for applications in nanoelectronics. In this work, we emphasize that graphene two dimensional character combined with current standard lithography processes allow to achieve devices smaller than the Dirac electrons wavelength. In this regime, we demonstrate that the electronic properties present deep analogies with subwavelength optics phenomena. We describe the rich transport physics in graphene-based nanodevices through optical analogies: From the Bethe and Kirchhoff-like diffraction patterns in the conductance of graphene slits to the Fabry-Perot oscillations of the conductance in nanoribbons. We introduce the concept of {\it electronic diffraction barriers}, which transmission cancels at the Dirac point. This gives central insight in the properties of Graphene subwavelength devices including nanoelectronics standard systems, such as quantum dots. As an application we propose a new type of quantum dots, namely functionalized subwavelength quantum dots, which could be used as molecular spin valves.

cond-mat.mes-hall↗

arXiv2008

Quenching of quantum Hall effect and the role of undoped planes in multilayered epitaxial graphene

We propose a mechanism for the quenching of the Shubnikov de Haas oscillations and the quantum Hall effect observed in epitaxial graphene. Experimental data show that the scattering time of the conduction electron is magnetic field dependent and of the order of the cyclotron orbit period, \textit{i.e.} can be much smaller than the zero field scattering time. Our scenario involves the extraordinary graphene $n=0$ Landau level of the uncharged layers that produces a high density of states at the Fermi level. We find that the coupling between this $n=0$ Landau level and the conducting states of the doped plane leads to a scattering mechanism having the right magnitude to explain the experimental data.

cond-mat.mes-hall↗

arXiv2006

Ab initio GW electron-electron interaction effects in Quantum Transport

We present an ab initio approach to electronic transport in nanoscale systems which includes electronic correlations through the GW approximation. With respect to Landauer approaches based on density-functional theory (DFT), we introduce a physical quasiparticle electronic-structure into a non-equilibrium Green's function theory framework. We use an equilibrium non-selfconsistent $G^0W^0$ self-energy considering both full non-hermiticity and dynamical effects. The method is applied to a real system, a gold mono-atomic chain. With respect to DFT results, the conductance profile is modified and reduced by to the introduction of diffusion and loss-of-coherence effects. The linear response conductance characteristic appear to be in agreement with experimental results.

cond-mat.mes-hall↗