SearcharxivSearch

arXiv subjects

Pierre Noé

Publications and source records attributed to Pierre Noé.

2 recordsLinked to original sources

A Segmented Heater-Driven, Low-Loss, Reconfigurable Photonic Phase-Change Material-Based Phase Shifter

Phase-change material (PCM)-based non-volatile multilevel phase shifters are key components in photonic integrated circuits. Electrically, multiple phase levels can be encoded by controlling the heater power and employing different microheater architectures to induce varying degrees of PCM amorphization. However, encoding a large number of levels is not straightforward. In this work, we first investigate a phase shifter structure based on a GeSe PCM integrated on top of a silicon-on-insulator waveguide, employing a simple rectangular-shaped heater under pulse-width modulation (PWM). We numerically demonstrate that multilevel phase shifts can be achieved because of non-uniform heating in the GeSe PCM layer. However, the resulting phase levels for this basic configuration are highly non-linear because of the uniform power dissipation along the light propagation direction characterized by the same cross-section. To overcome this limitation, we designed a novel PCM-based phase shifter with a segmented heater whose width gradually increases along the light propagation direction. This configuration enables the encoding of hundreds of well-spaced phase levels between 0 and $π$, facilitated by smoother amorphization arising from the combined effects of non-uniform heating across segments and within each segment, while achieving an insertion loss of only 0.6 dB in the worst case. Furthermore, when evaluating both heater architectures under pulse amplitude modulation (PAM) at a fixed pulse duration, we observe behavior consistent with the trends observed for PWM, confirming the superior performance of the segmented heater design.

physics.optics

Thermal conductivity of amorphous and crystalline GeTe thin film at high temperature: Experimental and theoretical study

Thermal transport properties bear a pivotal role in influencing the performance of phase change memory (PCM) devices, in which the PCM operation involves fast and reversible phase change between amorphous and crystalline phases. In this paper, we present a systematic experimental and theoretical study on the thermal conductivity of GeTe at high temperatures involving fast change from amorphous to crystalline phase upon heating. Modulated photothermal radiometry (MPTR) is used to experimentally determine thermal conductivity of GeTe at high temperatures in both amorphous and crystalline phases. Thermal boundary resistances are accurately taken into account for experimental consideration. To develop a concrete understanding of the underlying physical mechanism, rigorous and in-depth theoretical exercises are carried out. For this, first-principles density functional methods and linearized Boltzmann transport equations (LBTE) are employed using both direct and relaxation time based approach (RTA) and compared with that of the phenomenological Slack model. The amorphous phase experimental data has been described using the minimal thermal conductivity model with sufficient precision. The theoretical estimation involving direct solution and RTA method are found to retrieve well the trend of the experimental thermal conductivity for crystalline GeTe at high temperatures despite being slightly overestimated and underestimated, respectively, compared to the experimental data. A rough estimate of vacancy contribution has been found to modify the direct solution in such a way that it agrees excellently with the experiment. Umklapp scattering has been determined as the significant phonon-phonon scattering process. Umklapp scattering parameter has been identified for GeTe for the whole temperature range which can uniquely determine and compare Umklapp scattering processes for different materials

cond-mat.mtrl-sci