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Pim J. H. Lueb

Publications and source records attributed to Pim J. H. Lueb.

2 recordsLinked to original sources

Induced superconductivity in selective-area grown SnTe devices

Topological superconductors are of high interest for applications in topological quantum computation. The required topologically superconducting state can be engineered by proximityinducing superconductivity in a topological insulator. Here, we explore the induced superconductivity in selective-area grown nanowires of the topological crystalline insulator SnTe on a InP substrate, through TEM/EDX and low-temperature electronic transport studies. The observed superconducting behavior likely originates from indium in the substrate diffusing upwards into the SnTe nanowire, forming a thin layer of InxSn1-xTe at the interface between the nanowire and the substrate. InxSn1-xTe is intrinsically superconducting for indium concentrations above 2%, resulting in superconductivity within the heterostructure. Little-Parks oscillations are observed in loop-shaped nanowire networks in an out-of-plane magnetic field. The half-period shift indicative of a topological superconducting state is absent, which is explained by dominant trivial transport channels obscuring any topological signatures.

cond-mat.mes-hall↗

Catalyst-free MBE growth of PbSnTe nanowires with tunable aspect ratio

Topological crystalline insulators (TCIs) are interesting for their topological surface states, which hold great promise for scattering-free transport channels and fault-tolerant quantum computing. A promising TCI is SnTe. However, Sn-vacancies form in SnTe, causing a high hole density, hindering topological transport from the surface being measured. This issue could be relieved by using nanowires with a high surface-to-volume ratio. Furthermore, SnTe can be alloyed with Pb reducing the Sn-vacancies while maintaining its topological phase. Here we present the catalyst-free growth of monocrystalline PbSnTe in molecular beam epitaxy (MBE). By the addition of a pre-deposition stage before the growth, we have control over the nucleation phase and thereby increase the nanowire yield. This facilitates tuning the nanowire aspect ratio by a factor of four by varying the growth parameters. These results allow us to grow specific morphologies for future transport experiments to probe the topological surface states in a Pb1-xSnxTe-based platform.

cond-mat.mtrl-sci↗