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Pin Lyu

Publications and source records attributed to Pin Lyu.

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Ferromagnetism in diluted magnetic semiconductor quantum dot arrays embedded in semiconductors

We present an Anderson-type model Hamiltonian with exchange coupling between the localized spins and the confined holes in the quantum dots to study the ferromagnetism in diluted magnetic semiconductor (DMS) quantum dot arrays embedded in semiconductors. The hybridization between the quantum-confined holes in the DMS quantum dots and the itinerant holes in the semiconductor valence band makes hole transfer between quantum dots, which can induce the long range ferromagnetic order of the localized spins. In addition, it makes the carrier spins both in the DMS quantum dots and in the semiconductors polarized. The spontaneous magnetization of the localized spins and the spin polarization of the holes are calculated using both the Weiss mean field approximation and the self-consistent spin wave approximation, which are developed for the present model.

cond-mat.mes-hall

Tunneling magnetoresistance in diluted magnetic semiconductor tunnel junctions

Using the spin-polarized tunneling model and taking into account the basic physics of ferromagnetic semiconductors, we study the temperature dependence of the tunneling magnetoresistance (TMR) in the diluted magnetic semiconductor (DMS) trilayer heterostructure system (Ga,Mn)As/AlAs/(Ga,Mn)As. The experimentally observed TMR ratio is in reasonable agreement with our result based on the typical material parameters. It is also shown that the TMR ratio has a strong dependence on both the itinerant-carrier density and the magnetic ion density in the DMS electrodes. This can provide a potential way to achieve larger TMR ratio by optimally adjusting the material parameters.

cond-mat.str-el