arXiv subjects

Ping-An Hu

Publications and source records attributed to Ping-An Hu.

2 recordsLinked to original sources

arXiv2025

The Plastic Origin of van der Waals material GaGeTe

Plastic inorganic semiconductors are promising candidates for high performance stable flexible electronics. Germanium based chalcogenide materials are well known for excellent semiconducting properties, specifically superior carrier mobility. However, these materials typically exhibit inherent brittleness, which in germanium tellurides originates from the intrinsic half bond nature of the metavalent Ge Te bond. Here, we report an ultra high plasticity germanium based chalcogenide of GaGeTe. Bulk GaGeTe can sustain a large engineering strain up to 7.5% without fracture. Through a comprehensive multi scale investigation ranging from macroscopic characterization to atomic resolution scanning transmission electron microscopy, we reveal that the exceptional plasticity is due to a synergistic effect of interlayer gliding and intralayer lattice distortion. DFT calculations further elucidate the chemical origin. The existence of Ga atoms avoids the formation of brittle metavalent Ge Te bonds. Instead, a robust honeycomb lattice formed by strong Ga Te, Ge Ge, and Ga Ge bonds preserves high bond strength under large tensile strains in simulations, thereby underpinning the macroscopic plastic behavior. This systematic study on the origin of the plasticity in GaGeTe introduces bond engineering as a potential approach for constructing plastic inorganic semiconductors.

cond-mat.mtrl-sci↗

arXiv2025

Flexible BiSel/NiO-based X-ray synapses bridging the functions of detection and memory

Currently, the X-ray detectors are widely used in medical imaging, industrial inspection, aerospace, and other fields, as the market demand for high-efficiency, flexible, and low-power detectors is increased. Although the traditional inorganic X-ray detection materials have achieved great success and effectiveness, they have their own limitations and let alone flexibility/bendability and memory function. In this study, we present the design of a BiSeI/NiO-based X-ray synaptic detector and its application in the simulation of biological synaptic processes. Herein, the BiSeI, a quasi-1D inorganic semiconductor, stands out as an ideal choice for the X-ray detectors, especially for flexible and portable devices due to its large atomic number, large photoelectric absorption coefficient, and mechanical plasticity. Meanwhile, the NiO-based materials provide the memory function required for the intelligent detection systems. Moreover, our devices offer notable advantages in terms of low power consumption, compared with traditional X-ray detectors. The BiSeI/NiO detectors demonstrate advanced features with an ultrahigh sensitivity, an ultralow detection limit, and include the paired-pulse facilitation (PPF) and the transition from short- to long-term memory, maintaining the functionality on flexible substrates. This design represents a significant step toward the development of intelligent and flexible X-ray detectors.

physics.ins-det↗