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Pingbo Chen

Publications and source records attributed to Pingbo Chen.

4 recordsLinked to original sources

Room-temperature field-tunable radiofrequency rectification in epitaxial SrIrO3 films

Although significant advancements have been made in wireless technologies and portable devices, it remains a challenge for high-frequency and nanowatt-level radiofrequency rectification. In this work, we report a pronounced radiofrequency rectification up to 37 GHz in nominally centrosymmetric SrIrO3 epitaxial films, with the minimum detectable power as low as ~300 nanowatts. Strikingly, the SrIrO3 rectifier is highly field-tunable and exhibits a strong in-plane field anisotropy, thus showing a unique advantage in broad-band radiofrequency rectification. The rectification effect can persist up to at least 360 K and shows a sensitive temperature dependence including a sign inversion. By a systematic study of the nonlinear transport properties of SrIrO3, it is further revealed that the radiofrequency rectification originates from the nonlinear Hall effect with the dominant contribution from field-induced Berry curvature dipole. Our work demonstrates the superior performance of the field-tunable SrIrO3 rectifiers, unleashing the great application potential of centrosymmetric materials in harvesting and detecting ambient electromagnetic energy.

cond-mat.mtrl-sci

Edelstein effect induced superconducting diode effect in inversion symmetry breaking MoTe$_2$ Josephson junctions

Superconducting diode effect (SDE) with nonreciprocal supercurrent transport has attracted intense attention recently, not only for its intriguing physics, but also for its great application potential in superconducting circuits. It is revealed in this work that planar Josephson junctions (JJs) based on type-II Weyl semimetal (WSM) MoTe$_2$ can exhibit a prominent SDE due to the emergence of asymmetric Josephson effect (AJE) in perpendicular magnetic fields. The AJE manifests itself in a very large asymmetry in the critical supercurrents with respect to the current direction. The sign of this asymmetry can also be effectively modulated by the external magnetic field. Considering the special noncentrosymmetric crystal symmetry of MoTe$_2$, this AJE is understood in terms of the Edelstein effect, which induces a nontrivial phase shift in the current phase relation of the junctions. Besides these, it is further demonstrated that the rectification of supercurrent in such MoTe$_2$ JJs with the rectification efficiency up to 50.4%, unveiling the great application potential of WSMs in superconducting electronics.

cond-mat.supr-con

Polarity and spin-orbit coupling induced large interfacial exchange coupling an asymmetric charge transfer in iridate-manganite heterostructure

Charge transfer is of particular importance in manipulating the interface physics in transition-metal oxide heterostructures. In this work, we have fabricated epitaxial bilayers composed of polar 3d LaMnO3 and nonpolar 5d SrIrO3. Systematic magnetic measurements reveal an unexpectedly large exchange bias effect in the bilayer, together with a dramatic enhancement of the coercivity of LaMnO3. Based on first-principles calculations and x-ray absorption spectroscopy measurements, such a strong interfacial magnetic coupling is found closely associated with the polar nature of LaMnO3 and the strong spin-orbit interaction in SrIrO3, which collectively drives an asymmetric interfacial charge transfer and leads to the emergence of an interfacial spin glass state. Our study provides new insight into the charge transfer in transition-metal oxide heterostructures and offers a novel means to tune the interfacial exchange coupling for a variety of device applications.

cond-mat.mes-hall

Topological Hall effect in bulk ferromagnet Cr$_2$Te$_3$ embedded with black-phosphorus-like bismuth nanosheets

We implement the molecular beam epitaxy method to embed the black-phosphorus-like bismuth nanosheets into the bulk ferromagnet Cr$_2$Te$_3$. As a typical surfactant, bismuth lowers the surface tensions and mediates the layer-by-layer growth of Cr$_2$Te$_3$. Meanwhile, the bismuth atoms precipitate into black-phosphorus-like nanosheets with the lateral size of several tens of nanometers. In Cr$_2$Te$_3$ embedded with Bi-nanosheets, we observe simultaneously a large topological Hall effect together with the magnetic susceptibility plateau and magnetoresistivity anomaly. As a control experiment, none of these signals is observed in the pristine Cr$_2$Te$_3$ samples. Therefore, the Bi-nanosheets serve as seeds of topological Hall effect induced by non-coplanar magnetic textures planted into Cr$_2$Te$_3$. Our experiments demonstrate a new method to generates a large topological Hall effect by planting strong spin-orbit couplings into the traditional ferromagnet, which may have potential applications in spintronics.

cond-mat.mtrl-sci