arXiv subjects

Pino D'Amico

Publications and source records attributed to Pino D'Amico.

13 recordsLinked to original sources

arXiv2026

A viable and accurate route to GW simulations of metals and doped semiconductors

In this work we present an efficient and fully ab-initio approach for the calculation of the screened Coulomb potential, specifically designed for two dimensional (2D) and three dimensional (3D) metals and suitable to evaluate $GW$ corrections. While quasiparticle renormalization effects are typically negligible in bulk metals, 2D metals may exhibit semiconductor-like features, such as sizeable renormalization of quasiparticle energies induced by Coulomb interaction, which follow from the suppression of screening due to the reduced dimensionality, Although this effect can in principle be described by the $GW$ method, apart from a few pioneering exceptions, such calculations have been hampered by sampling requirements exceeding feasibility. We demonstrate that the combination of interpolation and extrapolation schemes together with the accounting of dynamical effects is pivotal to the correct handling of the intraband polarizability in the long wavelength limit. As an application, we report the gap renormalization of selected doped 2D-semiconductors in excellent agreement with ARPES measurements.

cond-mat.mtrl-sci↗

arXiv2023

Magnetic Transparent Conductors for Spintronic Applications

Transparent Conductors (TCs) exhibit optical transparency and electron conductivity, and are essential for many opto-electronic and photo-voltaic devices. The most common TCs are electron-doped oxides, which have few limitations when transition metals are used as dopants. Non-oxides TCs have the potential of extending the class of materials to the magnetic realm, bypass technological bottlenecks, and bring TCs to the field of spintronics. Here we propose new functional materials that combine transparency and conductivity with magnetic spin polarization that can be used for spintronic applications, such as spin filters. By using high-throughput first-principles techniques, we identified a large number of potential TCs, including non-oxides materials. Our results indicate that proper doping with transition metals introduces a finite magnetization that can provide spin filtering up to 90% in the electrical conductivity, still maintaining a transparency greater than 90%.

cond-mat.mtrl-sci↗

arXiv2023

Efficient GW calculations via the interpolation of the screened interaction in momentum and frequency space: The case of graphene

The GW self-energy may become computationally challenging to evaluate because of frequency and momentum convolutions. These difficulties were recently addressed by the development of the multipole approximation (MPA) and the W-av methods: MPA accurately approximates full-frequency response functions using a small number of poles, while W-av improves the convergence with respect to the k-point sampling in 2D materials. In this work we (i) present a theoretical scheme to combine them, and (ii) apply the newly developed approach to the paradigmatic case of graphene. Our findings show an excellent agreement of the calculated QP band structure with angle resolved photoemission spectroscopy (ARPES) data. Furthermore, the computational efficiency of MPA and W-av allows us to explore the logarithmic renormalization of the Dirac cone. To this aim, we develop an analytical model, derived from a Dirac Hamiltonian, that we parameterize using ab-initio data. The comparison of the models obtained with PPA and MPA results highlights an important role of the dynamical screening in the cone renormalization.

cond-mat.mtrl-sci↗

arXiv2022

Efficient GW calculations in two dimensional materials through a stochastic integration of the screened potential

Many-body perturbation theory methods, such as the $G_0W_0$ approximation, are able to accurately predict quasiparticle (QP) properties of several classes of materials. However, the calculation of the QP band structure of two-dimensional (2D) semiconductors is known to require a very dense BZ sampling, due to the sharp $q$-dependence of the dielectric matrix in the long-wavelength limit ($\mathbf{q} \to 0$). In this work, we show how the convergence of the QP corrections of 2D semiconductors with respect to the BZ sampling can be drastically improved, by combining a Monte Carlo integration with an interpolation scheme able to represent the screened potential between the calculated grid points. The method has been validated by computing the band gap of three different prototype monolayer materials: a transition metal dichalcogenide (MoS$_2$), a wide band gap insulator (hBN) and an anisotropic semiconductor (phosphorene). The proposed scheme shows that the convergence of the gap for these three materials up to 50meV is achieved by using $\k$-point grids comparable to those needed by DFT calculations, while keeping the grid uniform.

cond-mat.mtrl-sci↗

arXiv2019

Intrinsic edge excitons in two-dimensional MoS$_2$

Using accurate first-principles calculations based on many-body perturbation theory we predict that two-dimensional MoS$_2$ hosts edge excitons with universal character, intrinsic to the existence of edges and lying well below the onset of bulk features. These excitons are largely insensitive to edge terminations or orientation, persisting even in the presence of metallic screening at zigzag edges, with large binding energies of $\sim$0.4 eV. Additional excitons can also emerge in ultranarrow ribbons, or as a function of the chemical nature of the termination. The chemical, structural, and electronic similarities with Se- or W-based transition-metal dichalcogenides suggest that these optical features could be common in this class of materials.

cond-mat.mes-hall↗

arXiv2017

The AFLOW Fleet for Materials Discovery

The traditional paradigm for materials discovery has been recently expanded to incorporate substantial data driven research. With the intent to accelerate the development and the deployment of new technologies, the AFLOW Fleet for computational materials design automates high-throughput first principles calculations, and provides tools for data verification and dissemination for a broad community of users. AFLOW incorporates different computational modules to robustly determine thermodynamic stability, electronic band structures, vibrational dispersions, thermo-mechanical properties and more. The AFLOW data repository is publicly accessible online at aflow.org, with more than 1.7 million materials entries and a panoply of queryable computed properties. Tools to programmatically search and process the data, as well as to perform online machine learning predictions, are also available.

cond-mat.mtrl-sci↗

arXiv2016

Accurate $ab~initio$ tight-binding Hamiltonians: effective tools for electronic transport and optical spectroscopy from first principles

The calculations of electronic transport coefficients and optical properties require a very dense interpolation of the electronic band structure in reciprocal space that is computationally expensive and may have issues with band crossing and degeneracies. Capitalizing on a recently developed pseudo-atomic orbital projection technique, we exploit the exact tight-binding representation of the first principles electronic structure for the purposes of (1) providing an efficient strategy to explore the full band structure $E_n({\bf k})$, (2) computing the momentum operator differentiating directly the Hamiltonian, and (3) calculating the imaginary part of the dielectric function. This enables us to determine the Boltzmann transport coefficients and the optical properties within the independent particle approximation. In addition, the local nature of the tight-binding representation facilitates the calculation of the ballistic transport within the Landauer theory for systems with hundreds of atoms. In order to validate our approach we study the multi-valley band structure of CoSb$_3$ and a large core-shell nanowire using the ACBN0 functional. In CoSb$_3$ we point the many band minima contributing to the electronic transport that enhance the thermoelectric properties; for the core-shell nanowire we identify possible mechanisms for photo-current generation and justify the presence of protected transport channels in the wire.

cond-mat.mtrl-sci↗

arXiv2015

Pairing of few Fermi atoms in one dimension

We study a few Fermi atoms interacting through attractive contact forces in a one-dimensional trap by means of numerical exact diagonalization. From the combined analysis of energies and wave functions of correlated ground and excited states we find evidence of BCS-like pairing even for very few atoms. For moderate interaction strength, we reproduce the even-odd oscillation of the separation energy observed in [G. Zuern, A. N. Wenz, S. Murmann, A. Bergschneider, T. Lompe, and S. Jochim, Phys. Rev. Lett. 111, 175302 (2013)]. For strong interatomic attraction the arrangement of dimers in the trap differs from the homogeneous case as a consequence of Pauli blockade in real space.

cond-mat.quant-gas↗

arXiv2014

Three interacting atoms in a one-dimensional trap: A benchmark system for computational approaches

We provide an accurate calculation of the energy spectrum of three atoms interacting through a contact force in a one-dimensional harmonic trap, considering both spinful fermions and spinless bosons. We use fermionic energies as a benchmark for exact-diagonalization technique (also known as full configuration interaction), which is found to slowly converge in the case of strong interatomic attraction.

cond-mat.quant-gas↗

arXiv2013

Engineering interband tunneling in nanowires with diamond cubic or zincblende crystalline structure based on atomistic modeling

We present an investigation in the device parameter space of band-to-band tunneling in nanowires with a diamond cubic or zincblende crystalline structure. Results are obtained from quantum transport simulations based on Non-Equilibrium Green's functions with a tight-binding atomistic Hamiltonian. Interband tunneling is extremely sensitive to the longitudinal electric field, to the nanowire cross section, through the gap, and to the material. We have derived an approximate analytical expression for the transmission probability based on WKB theory and on a proper choice of the effective interband tunneling mass, which shows good agreement with results from atomistic quantum simulation.

cond-mat.mes-hall↗

arXiv2009

Single-spin polaron memory effect

The single-spin memory effect is considered within a minimal polaron model describing a single-level quantum dot interacting with a vibron and weakly coupled to ferromagnetic leads. We show that in the case of strong electron-vibron and Coulomb interactions the rate of spontaneous quantum switching between two spin states is suppressed at zero bias voltage, but can be tuned through a wide range of finite switching timescales upon changing the bias. We further find that such junctions exhibit hysteretic behavior enabling controlled switching of a spin state. Spin lifetime, current and spin polarization are calculated as a function of the bias voltage by the master equation method. We also propose to use a third tunneling contact to control and readout the spin state.

cond-mat.mes-hall↗

arXiv2008

Charge-memory effect in a polaron model: equation-of-motion method for Green functions

We analyze a single-level quantum system placed between metallic leads and strongly coupled to a localized vibrational mode, which models a singlemolecule junction or an STM setup. We consider a polaron model describing the interaction between electronic and vibronic degrees of freedom and develop and examine different truncation schemes in the equation-of-motion method within the framework of non-equilibrium Green functions. We show that upon applying gate or bias voltage, it is possible to observe charge-bistability and hysteretic behavior which can be the basis of a charge-memory element. We further perform a systematic analysis of the bistability behaviour of the system for different internal parameters such as the electron-vibron and the lead-molecule coupling strength.

cond-mat.mes-hall↗

arXiv2008

Charge-memory polaron effect in molecular junctions

The charge-memory effect, bistability and switching between charged and neutral states of a molecular junction, as observed in recent STM experiments, is considered within a minimal polaron model. We show that in the case of strong electron-vibron interaction the rate of spontaneous quantum switching between charged and neutral states is exponentially suppressed at zero bias voltage but can be tuned through a wide range of finite switching timescales upon changing the bias. We further find that, while junctions with symmetric voltage drop give rise to random switching at finite bias, asymmetric junctions exhibit hysteretic behavior enabling controlled switching. Lifetimes and charge-voltage curves are calculated by the master equation method for weak coupling to the leads and at stronger coupling by the equation-of-motion method for nonequilibrium Green functions.

cond-mat.mes-hall↗