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Pinyuan Wang

Publications and source records attributed to Pinyuan Wang.

8 recordsLinked to original sources

Demonstration of robust chiral edge transport in Chern insulator MnBi2Te4 devices with engineered geometric defects

Chiral edge states in Chern insulators are theoretically predicted to propagate unidirectionally along the sample boundary with inherent robustness against local perturbations, which manifests as the immunity to impurity-induced backscattering, a key factor for the development of robust, high-performance quantum devices. However, the direct experimental verification of the robustness of chiral edge states remains scarce. Here, we experimentally validate the robustness of the chiral edge states in MnBi2Te4 devices featuring engineered geometric defects introduced via atomic force microscope (AFM) nanomachining. Specifically, under a moderate perpendicular magnetic field, the MnBi2Te4 devices exhibit the Chern insulator state, characterized by a quantized Hall plateau and simultaneously vanishing longitudinal resistance. To verify the robustness of this topological state, we modify the device geometry by cutting a slit using AFM nanomachining that severs the original edge channel. Remarkably, the quantization behavior survives this drastic modification. The robust nature of the chiral edge transport is further confirmed by two-terminal, three-terminal and non-local measurements, fully demonstrating that the edge currents can bypass the artificial cut without dissipation. Our results unambiguously demonstrate the robustness of chiral edge states against geometric disruption and establish AFM nanomachining as a promising technique for topological quantum devices engineering.

cond-mat.mes-hall

Nonreciprocal superconducting critical currents with normal state field trainability in kagome superconductor CsV3Sb5

Determining time-reversal symmetry (TRS) and chirality in the superconducting state and its relation to normal-state symmetry and topology are important issues in condensed matter physics. Here, we report nonreciprocal superconducting critical currents (Ic) at zero magnetic field in kagome superconductor CsV3Sb5 nanodevices: Ic differs for opposite directions, indicating spontaneous TRS and inversion symmetry breakings. The polarity of Ic asymmetry changes randomly in repeated thermal cycling to 300 K, consistent with spontaneous TRS breaking. Crucially, on applying a perpendicular magnetic field above the charge density wave (CDW) transition temperature and then removing it to zero above the superconducting onset temperature (Tc), the polarity of Ic asymmetry follows the field direction, ascertaining that the CDW state has a macroscopic and trainable TRS-breaking directionality. The symmetry breaking continues into the superconducting state and generates the nonreciprocal critical currents. These results provide evidence for the loop-current CDW normal state with TRS breaking in CsV3Sb5.

cond-mat.supr-con

Charge-4e and charge-6e flux quantization and higher charge superconductivity in kagome superconductor ring devices

The flux quantization is a key indication of electron pairing in superconductors. For example, the well-known h/2e flux quantization is considered strong evidence for the existence of the charge-2e, two-electron Cooper pairs. Here we report evidence for multi-charge flux quantization in mesoscopic ring devices fabricated using the transition-metal kagome superconductor CsV3Sb5. We perform systematic magneto-transport measurements and observe unprecedented quantization of magnetic flux in units of h/4e and h/6e in magnetoresistance oscillations. Specifically, at low temperatures, magnetoresistance oscillations with period h/2e are detected, as expected from the flux quantization for charge-2e superconductivity. We find that the h/2e oscillations are suppressed and replaced by resistance oscillations with h/4e periodicity when temperature is increased. Increasing the temperature further suppresses the h/4e oscillations and robust resistance oscillations with h/6e periodicity emerge as evidence for charge-6e flux quantization. Our observations provide the first experimental evidence for the existence of multi-charge flux quanta and emergent quantum matter exhibiting higher-charge superconductivity in the strongly fluctuating region above the charge-2e Cooper pair condensate, revealing new insights into the intertwined and vestigial electronic order in kagome superconductors.

cond-mat.supr-con

Ferromagnetic and insulating behavior in both half magnetic levitation and non-levitation LK-99 like samples

Finding materials exhibiting superconductivity at room temperature has long been one of the ultimate goals in physics and material science. Recently, room-temperature superconducting properties have been claimed in a copper substituted lead phosphate apatite (Pb$_{10-x}$Cu$_x$(PO$_4$)$_6$O, or called LK-99) [1-3]. Using a similar approach, we have prepared LK-99 like samples and confirmed the half-levitation behaviors in some small specimens under the influence of a magnet at room temperature. To examine the magnetic properties of our samples, we have performed systematic magnetization measurements on the as-grown LK-99-like samples, including the half-levitated and non-levitated samples. The magnetization measurements show the coexistence of soft-ferromagnetic and diamagnetic signals in both half-levitated and non-levitated samples. The electrical transport measurements on the as-grown LK-99-like samples including both half-levitated and non-levitated samples show an insulating behavior characterized by the increasing resistivity with the decreasing temperature.

cond-mat.supr-con

Anomalous magneto-thermoelectric behavior in massive Dirac materials

Extensive studies of electron transport in Dirac materials have shown positive magneto-resistance (MR) and positive magneto-thermopower (MTP) in a magnetic field perpendicular to the excitation current or thermal gradient. In contrast, measurements of electron transport often show a negative longitudinal MR and negative MTP for a magnetic field oriented along the excitation current or thermal gradient; this is attributed to the chiral anomaly in Dirac materials. Here, we report a very different magneto-thermoelectric transport behavior in the massive Dirac material ZrTe5. Although thin flakes show a commonly observed positive MR in a perpendicular magnetic field, distinct from other Dirac materials, we observe a sharp negative MTP. In a parallel magnetic field, we still observe a negative longitudinal MR, however, a remarkable positive MTP is observed for the fields parallel to the thermal gradients. Our theoretical calculations suggest that this anomalous magneto-thermoelectric behavior can be attributed to the screened Coulomb scattering. This work demonstrates the significance of impurity scattering in the electron transport of topological materials and provides deep insight into the novel magneto-transport phenomena in Dirac materials.

cond-mat.mtrl-sci

Magnetization-tuned topological quantum phase transition in MnBi2Te4 devices

Recently, the intrinsic magnetic topological insulator MnBi2Te4 has attracted enormous research interest due to the great success in realizing exotic topological quantum states, such as the quantum anomalous Hall effect (QAHE), axion insulator state, high-Chern-number and high-temperature Chern insulator states. One key issue in this field is to effectively manipulate these states and control topological phase transitions. Here, by systematic angle-dependent transport measurements, we reveal a magnetization-tuned topological quantum phase transition from Chern insulator to magnetic insulator with gapped Dirac surface states in MnBi2Te4 devices. Specifically, as the magnetic field is tilted away from the out-of-plane direction by around 40-60 degrees, the Hall resistance deviates from the quantization value and a colossal, anisotropic magnetoresistance is detected. The theoretical analyses based on modified Landauer-Buttiker formalism show that the field-tilt-driven switching from ferromagnetic state to canted antiferromagnetic state induces a topological quantum phase transition from Chern insulator to magnetic insulator with gapped Dirac surface states in MnBi2Te4 devices. Our work provides an efficient means for modulating topological quantum states and topological quantum phase transitions.

cond-mat.mes-hall

Intrinsic magnetic topological insulators

Introducing magnetism into topological insulators breaks time-reversal symmetry, and the magnetic exchange interaction can open a gap in the otherwise gapless topological surface states. This allows various novel topological quantum states to be generated, including the quantum anomalous Hall effect (QAHE) and axion insulator states. Magnetic doping and magnetic proximity are viewed as being useful means of exploring the interaction between topology and magnetism. However, the inhomogeneity of magnetic doping leads to complicated magnetic ordering and small exchange gaps, and consequently the observed QAHE appears only at ultralow temperatures. Therefore, intrinsic magnetic topological insulators are highly desired for increasing the QAHE working temperature and for investigating topological quantum phenomena further. The realization and characterization of such systems are essential for both fundamental physics and potential technical revolutions. This review summarizes recent research progress in intrinsic magnetic topological insulators, focusing mainly on the antiferromagnetic topological insulator MnBi2Te4 and its family of materials.

cond-mat.mes-hall

Systematic electrochemical etching of various metal tips for tunneling spectroscopy and scanning probe microscopy

Hard point-contact spectroscopy and scanning probe microscopy/spectroscopy are powerful techniques for investigating materials with strong expandability. To support these studies, tips with various physical and chemical properties are required. To ensure the reproducibility of experimental results, the fabrication of tips should be standardized, and a controllable and convenient system should be set up. Here a systematic methodology to fabricate various tips is proposed, involving electrochemical etching reactions. The reaction parameters fall into four categories: solution, power supply, immersion depth, and interruption. An etching system was designed and built so that these parameters could be accurately controlled. With this system, etching parameters for copper, silver, gold, platinum/iridium alloy, tungsten, lead, niobium, iron, nickel, cobalt, and permalloy were explored and standardized. Among these tips, silver and niobium's new recipes were explored and standardized. Optical and scanning electron microscopies were performed to characterize the sharp needles. Relevant point-contact experiments were carried out with an etched silver tip to confirm the suitability of the fabricated tips.

cond-mat.mtrl-sci