arXiv subjects

Piotr Wisniewski

Publications and source records attributed to Piotr Wisniewski.

8 recordsLinked to original sources

arXiv2026

Thermodynamic and electrical transport properties of the half-Heusler plumbide TbAuPb

Structural, thermodynamic and electrical transport properties of TbAuPb were investigated on single crystals. The compound was found to crystallize with the cubic MgAgAs-type structure characteristic of half-Heusler materials. It orders antiferromagnetically at TN = 5 K and undergoes a transition into a different antiferromagnetic phase emerging in high magnetic fields. Electrical transport in TbAuPb exhibits a multiband character, with a predominance of hole-like carriers. Angular magnetoresistance evolves systematically with applied magnetic field and changes its symmetry near the spin-reorientation transition, highlighting strong coupling between the charge transport and the magnetic order. The results of first-principles calculations indicate that TbAuPb is a band inverted semimetal in the non-magnetic state, which becomes topologically trivial in the field-induced ferromagnetic state.

cond-mat.str-el↗

arXiv2026

Anomalous magnetotransport in the single-crystalline half-Heusler antiferromagnet ErPdSb

We report the thermodynamic and magnetotransport properties of the half-Heusler antimonide ErPdSb, studied on single-crystalline samples in wide ranges of temperature and magnetic fields. The compound was found to order antiferromagnetically at 1.2 K. In the paramagnetic state, it shows semimetallic behavior with a broad hump in the temperature-dependent electrical resistivity around 70 K. The results of ab initio calculations of the electronic structure of ErPdSb indicated a bulk insulating nature. In small magnetic fields the magnetoresistance is driven by a weak antilocalization effect, while in strong fields it is negative and describable by the deGennes-Friedel formalism. The Hall effect data indicated that holes are the dominant charge carriers. At 2 K, the Hall conductivity exhibits a sizable anomalous contribution, which is obscured by multiband effects at higher temperatures. The angular magnetoresistance shows unusual features as functions of magnetic field and temperature, pointing to a possible field-induced reconstruction of the Fermi surface.

cond-mat.str-el↗

arXiv2026

Magnetic and electrical transport properties of the single-crystalline half-Heusler antiferromagnet DyNiSb

High-quality single crystals of the half-Heusler compound DyNiSb were investigated for their low temperature thermodynamic and magnetotransport properties. Magnetic susceptibility, heat capacity, and electrical resistivity measurements revealed two distinct magnetic phase transitions at TN1 = 7.3 K and TN2 = 3.4 K, contrasting with previous reports on polycrystalline samples, which identified only a single transition near TN2 . Moreover, the studied samples were found to exhibit Metal like conductivity, at odds with a semiconducting behavior reported for the polycrystals. Magnetoresistance measurements performed in both transverse and longitudinal configurations revealed in small magnetic fields a weak antilocalization effect that diminishes with increasing temperature, giving way to a positive, monotonic magnetoresistance at high temperatures. Angular-dependent resistivity studies showed a crossover from fourfold to twofold symmetry with increasing magnetic-field strength, suggesting a field-induced reconstruction of the Fermi surface. Our findings highlight a complex magnetic and electrical transport behavior in DyNiSb, highly sensitive to structural disorder and easily tunable by external magnetic field.

cond-mat.str-el↗

arXiv2025

Nature of field-induced transitions and hysteretic magnetoresistance in non-collinear antiferromagnet EuIn2As2

We examine the magnetic and electrical transport properties of the hexagonal EuIn2As2 compound, combining experimental and theoretical results. This compound is predicted to be an axion-insulator from an electronic point of view and an altermagnet while in the collinear magnetic phase. However, experiments indicate that the Fermi level lies within the valence band rather than in the topological gap, potentially leading to the dominance of magnetic properties. Our detailed studies on magnetization and electrical transport support the presence of a broken-helix antiferromagnetic state, which was previously identified by X-ray and neutron diffraction experiments. Notably, we observed within that state a field-induced metamagnetic transition marked by a large hysteresis in magnetoresistance, which turns into a sharp upturn for the magnetic field tilted by 15 degree from the c-axis of the crystal. Combined with theoretical calculations, it is explained that the application of a magnetic field changes the low-resistivity antiferromagnetic domain walls to the high-resistivity domain walls due to the reduction in the Fermi surface sheets interaction area in the domain walls, originating from p-orbitals of As. EuIn2As2, therefore, presents a new case study that broadens the understanding of complex magnetic structures and their influence on electrical transport.

cond-mat.mtrl-sci↗

arXiv2024

Angular dependence of large negative magnetoresistance in a field-induced Weyl semimetal candidate HoAuSn

The angular dependence of magnetoresistance (MR) in antiferromagnetic half-Heusler HoAuSn single crystals have been systematically studied. Negative MR, as large as 99%, is observed at 9 T, is not restricted to the specific configuration of applied magnetics fields and current, and can persist up to 20 K, much higher than the Neel temperature (TN 1.9 K). Experiments and first-principles calculations suggest that the observed large negative MR is derived from a magnetic field that reconstructs the band structure and induces a Weyl point, which changes the carrier concentration. Taking into consideration that large negative MR has so far been rarely reported, especially in antiferromagnetic materials, it is anticipated that the present work not only offers a guideline for searching materials with large negative MR but also helps to further realize other exotic topological electronic states in a large class of antiferromagnetic half-Heusler compounds.

cond-mat.mtrl-sci↗

arXiv2024

Evidence of variable range hopping in the Zintl phase EuIn2P2

We report a comprehensive characterization of the magnetic, electrical transport, spectral, and thermal properties of single-crystalline Zintl-type material EuIn2P2. The compound crystallizes with a hexagonal unit cell (space group P63/mmc) and orders magnetically at TC=24K with the Eu magnetic moments aligned ferromagnetically within the ab plane but tilted alternately along the c-axis direction. The effective and saturation magnetic moments agree with the theoretical values expected for the Eu2+ ion. For a range of several tens of kelvins above 40K, the electrical transport of EuIn2P2 is dominated by short-range magnetic interactions. The temperature dependence of the electrical resistivity has been modelled in terms of variable-range hopping. Another indication of the latter scenario seems to be the observation for EuIn2P2 of a quadratic dependence of the negative magnetoresistance on the magnetic field strength and the scaled magnetization. The temperature dependence of Raman band position and FWHM, as well as phonon lifetime, confirms the presence of the distinctive regions observed in transport and magnetic studies.

cond-mat.mtrl-sci↗

arXiv2020

Observation of gapped state in rare-earth monopnictide HoSb

The rare-earth monopnictide family is attracting an intense current interest driven by its unusual extreme magnetoresistance (XMR) property and the potential presence of topologically non-trivial surface states. The experimental observation of non-trivial surface states in this family of materials are not ubiquitous. Here, using high-resolution angle-resolved photoemission spectroscopy (ARPES), magnetotransport, and parallel first-principles modeling, we examine the nature of electronic states in HoSb. Although we find the presence of bulk band gaps at the G and X-symmetry points of the Brillouin zone (BZ), we do not find these gaps to exhibit band inversion so that HoSb does not host a Dirac semimetal state. Our magnetotransport measurements indicate that HoSb can be characterized as a correlated nearly-complete electron-hole-compensated semimetal. Our analysis reveals that the nearly perfect electron-hole compensation could drive the appearance of non-saturating XMR effect in HoSb.

cond-mat.mes-hall↗

arXiv2018

Observation of Dirac state in half-Heusler material YPtBi

The prediction of non-trivial topological electronic states hosted by half-Heusler compounds makes them prime candidates for discovering new physics and devices as they harbor a variety of electronic ground states including superconductivity, magnetism, and heavy fermion behavior. Here we report normal state electronic properties of a superconducting half-Heusler compound YPtBi using angle-resolved photoemission spectroscopy (ARPES). Our data reveal the presence of a Dirac state at the zone center of the Brillouin zone at 500 meV below the chemical potential. We observe the presence of multiple Fermi surface pockets including two concentric hexagonal and six half oval shaped pockets at the gamma and K points of the Brillouin zone, respectively. Furthermore, our measurements show Rashba-split bands and multiple surface states crossing the chemical potential which are supported by the first-principles calculations. Our finding of a Dirac state in YPtBi plays a significant role in establishing half-Heusler compounds as a new potential platform for novel topological phases and explore their connection with superconductivity.

cond-mat.mes-hall↗