arXiv subjects

Piranavan Kumaravadivel

Publications and source records attributed to Piranavan Kumaravadivel.

7 recordsLinked to original sources

arXiv2025

Fast microwave-driven two-qubit gates between fluxonium qubits with a transmon coupler

Two qubit gates constitute fundamental building blocks in the realization of large-scale quantum devices. Using superconducting circuits, two-qubit gates have previously been implemented in different ways with each method aiming to maximize gate fidelity. Another important goal of a new gate scheme is to minimize the complexity of gate calibration. In this work, we demonstrate a high-fidelity two-qubit gate between two fluxonium qubits enabled by an intermediate capacitively coupled transmon. The coupling strengths between the qubits and the coupler are designed to minimize residual crosstalk while still allowing for fast gate operations. The gate is based on frequency selectively exciting the coupler using a microwave drive to complete a 2$π$ rotation, conditional on the state of the fluxonium qubits. When successful, this drive scheme implements a conditional phase gate. Using analytically derived pulse shapes, we minimize unwanted excitations of the coupler and obtain gate errors of $10^{-2}$ for gate times below 60~ns. At longer durations, our gate is limited by relaxation of the coupler. Our results show how carefully designed control pulses can speed up frequency selective entangling gates.

quant-ph↗

arXiv2025

Single-Qubit Gates Beyond the Rotating-Wave Approximation for Strongly Anharmonic Low-Frequency Qubits

Single-qubit gates are in many quantum platforms applied using a linear drive resonant with the qubit transition frequency which is often theoretically described within the rotating-wave approximation (RWA). However, for fast gates on low-frequency qubits, the RWA may not hold and we need to consider the contribution from counter-rotating terms to the qubit dynamics. The inclusion of counter-rotating terms into the theoretical description gives rise to two challenges. Firstly, it becomes challenging to analytically calculate the time evolution as the Hamiltonian is no longer self-commuting. Moreover, the time evolution now depends on the carrier phase such that, in general, every operation in a sequence of gates is different. In this work, we derive and verify a correction to the drive pulses that minimizes the effect of these counter-rotating terms in a two-level system. We then derive a second correction term that arises from non-computational levels for a strongly anharmonic system. We experimentally implement these correction terms on a fluxonium superconducting qubit, which is an example of a strongly anharmonic, low-frequency qubit for which the RWA may not hold, and demonstrate how fast, high-fidelity single-qubit gates can be achieved without the need for additional hardware complexities.

quant-ph↗

arXiv2020

Long-range ballistic transport of Brown-Zak fermions in graphene superlattices

In quantizing magnetic fields, graphene superlattices exhibit a complex fractal spectrum often referred to as the Hofstadter butterfly. It can be viewed as a collection of Landau levels that arise from quantization of Brown-Zak minibands recurring at rational ($p/q$) fractions of the magnetic flux quantum per superlattice unit cell. Here we show that, in graphene-on-boron-nitride superlattices, Brown-Zak fermions can exhibit mobilities above 10$^6$ cm$^2$V$^{-1}$s$^{-1}$ and the mean free path exceeding several micrometers. The exceptional quality of our devices allows us to show that Brown-Zak minibands are $4q$ times degenerate and all the degeneracies (spin, valley and mini-valley) can be lifted by exchange interactions below 1K. We also found negative bend resistance at $1/q$ fractions for electrical probes placed as far as several micrometers apart. The latter observation highlights the fact that Brown-Zak fermions are Bloch quasiparticles propagating in high fields along straight trajectories, just like electrons in zero field.

cond-mat.mes-hall↗

arXiv2017

Magnetic field suppression of Andreev conductance at superconductor-graphene interfaces

Studying the interplay between superconductivity and quantum magnetotransport in two-dimensional materials has been a topic of interest in recent years. Towards such a goal it is important to understand the impact of magnetic field on the charge transport at the superconductor-normal channel (SN) interface. Here we carried out a comprehensive study of Andreev conductance under weak magnetic fields using diffusive superconductor- graphene Josephson weak links. We observe that the Andreev conductance is suppressed even in magnetic fields far below the upper critical field of the superconductor. The suppression of Andreev conductance depends on and can be minimized by controlling the ramping of the magnetic field. We identify that the key factor behind this suppression is the reduction of the superconducting gap due to the piling of vortices on the superconducting contacts. In devices where superconducting gap at the superconductor-graphene interface is heavily reduced by proximity effect, the enlarged vortex cores overlap quickly with increasing magnetic field, resulting in a rapid decrease of the interfacial gap. However, in weak links with relatively large effective superconducting gap the AR conductance persists up to the upper critical field. Our results provide guidance to the study of quantum material-superconductor systems in presence of magnetic field, where 'survival' of induced superconductivity is critical.

cond-mat.mes-hall↗

arXiv2016

Signatures of evanescent transport in ballistic suspended graphene superconductor junctions

In Dirac materials, the low energy excitations behave like ultra-relativistic massless particles with linear energy dispersion. A particularly intriguing phenomenon arises with the intrinsic charge transport behavior at the Dirac point where the charge density approaches zero. In graphene, a 2-D Dirac fermion system, it was predicted that charge transport near the Dirac point is carried by evanescent modes, resulting in unconventional pseudo-diffusive charge transport even in the absence of disorder. In the past decade, experimental observation of this phenomenon remained challenging due to the presence of strong disorder in graphene devices which limits the accessibility of the low carrier density regime close enough to the Dirac point. Here we report transport measurements on ballistic suspended graphene-Niobium Josephson weak links that demonstrate a transition from ballistic to pseudo-diffusive like evanescent transport below a carrier density of $(10^{10} cm^{-2})$.Approaching the Dirac point, the sub-harmonic gap structures due to multiple Andreev reflections display a strong Fermi energy-dependence and become increasingly pronounced, while the normalized excess current through the superconductor-graphene interface decreases sharply. Our observations are in qualitative agreement with the longstanding theoretical prediction for the emergence of evanescent transport mediated pseudo-diffusive transport in graphene.

cond-mat.mes-hall↗

arXiv2015

Tuning Strain in Flexible Graphene Nanoelectromechanical Resonators

The structural flexibility of low dimensional nanomaterials offers unique opportunities for studying the impact of strain on their physical properties and for developing innovative devices utilizing strain engineering. A key towards such goals is a device platform which allows the independent tuning and reliable calibration of the strain. Here we report the fabrication and characterization of graphene nanoelectromechanical resonators(GNEMRs) on flexible substrates. Combining substrate bending and electrostatic gating, we achieve the independent tuning of the strain and sagging in graphene and explore the nonlinear dynamics over a wide parameter space. Analytical and numerical studies of a continuum mechanics model, including the competing higher order nonlinear terms, reveal a comprehensive nonlinear dynamics phase diagram, which quantitatively explains the complex behaviors of GNEMRs.

cond-mat.mes-hall↗

arXiv2011

Bolometric response in graphene based superconducting tunnel junctions

We fabricate graphene-TiOx-Al tunnel junctions and characterize their radio frequency response. Below the superconducting critical temperature of Al and when biased within the superconducting gap, the devices show enhanced dynamic resistance which increases with decreasing temperature. Application of radio frequency radiation affects the dynamic resistance through electronic heating. The relation between the electron temperature rise and the absorbed radiation power is measured, from which the bolometric parameters, including heat conductance, noise equivalent power and responsivity, are characterized.

cond-mat.mes-hall↗