SearcharxivSearch

arXiv subjects

Piyush Jaiswal

Publications and source records attributed to Piyush Jaiswal.

3 recordsLinked to original sources

Analysis of LLMs Against Prompt Injection and Jailbreak Attacks

Large Language Models (LLMs) are widely deployed in real-world systems. Given their broader applicability, prompt engineering has become an efficient tool for resource-scarce organizations to adopt LLMs for their own purposes. At the same time, LLMs are vulnerable to prompt-based attacks. Thus, analyzing this risk has become a critical security requirement. This work evaluates prompt-injection and jailbreak vulnerability using a large, manually curated dataset across multiple open-source LLMs, including Phi, Mistral, DeepSeek-R1, Llama 3.2, Qwen, and Gemma variants. We observe significant behavioural variation across models, including refusal responses and complete silent non-responsiveness triggered by internal safety mechanisms. Furthermore, we evaluated several lightweight, inference-time defence mechanisms that operate as filters without any retraining or GPU-intensive fine-tuning. Although these defences mitigate straightforward attacks, they are consistently bypassed by long, reasoning-heavy prompts.

cs.CR

Microwave Irradiation Assisted Deposition of Ga2O3 on III-nitrides for deep-UV opto-electronics

We report on the deposition of gallium oxide using microwave irradiation technique on III nitride epi layers. We also report on the first demonstration of a gallium oxide device, a visible blind deep UV detector, with GaN based heterostructure as the substrate. The film deposited in the solution medium, at less than 200 C, using a metalorganic precursor, was nanocrystalline. XRD confirms that as deposited film when annealed at high temperature turns polycrystalline beta gallium oxide. SEM shows the as deposited film to be uniform, with a surface roughness of 4 to 5 nm, as revealed by AFM. Interdigitated metal semiconductor metal MSM devices with Ni,Au contact exhibited peak spectral response at 230 nm and a good visible rejection ratio. This first demonstration of a deep-UV detector on beta-gallium oxide on III nitride stack is expected to open up new possibilities of functional and physical integration of beta gallium oxide and GaN material families towards enabling next generation high performance devices by exciting band and heterostructure engineering.

cond-mat.mtrl-sci

Texture of ZnO thin films deposited through microwave irradiation

We report the crystallographic texture of ZnO thin films comprising nanorods grown by a microwave irradiation assisted method. Different substrates were used, namely Si, Ge, metal coated Si, PMMA coated Si and ITO coated glass, to examine the respective development of crystallographic texture. The films were characterized by Xray diffraction and scanning electron microscopy, while the texture analysis was done by Xray pole figure analysis using the Schultz reflection method. The ZnO film deposited on Si and Ge showed a mixed texture. On all the other substrates, c axis oriented ZnO films were obtained.

cond-mat.mtrl-sci