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Po-Wei Chen

Publications and source records attributed to Po-Wei Chen.

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Electrothermal control of spin-reorientation transition in Co/Fe_3GaTe_2 heterostructures

Electrical control of magnetic anisotropy in van der Waals (vdWs) magnets is a key step toward reconfigurable two-dimensional spintronics, yet how a conventional metallic ferromagnet competes with a van der Waals magnet across a direct interface has remained largely unexplored. Here we demonstrate reversible thermal and electrothermal control of a spin-reorientation transition in Co/Fe_3GaTe_2 (FGaT) heterostructures. As Joule heating weakens the FGaT anisotropy, the heterostructure switches from an out-of-plane- to an in-plane-dominated state at a reorientation temperature of approximately 311 K, well below the Curie temperature, consistent with an exchange-mediated anisotropy competition between the Co overlayer and FGaT. An electrically driven device shows a closely matching loop evolution within an 80-100 mW power window, reversibly over five measurement cycles, consistent with an electrothermal origin. In a Co-free FGaT device, Kerr microscopy traces the switching to a power-tunable domain nucleation barrier and demonstrates power-thresholded, field-assisted magnetization reversal at a threshold near 15 mW. These results demonstrate electrothermal anisotropy competition as a route to heat-assisted and device-level control of vdWs magnetism.

cond-mat.mes-hall

Room temperature operation of germanium-silicon single-photon avalanche diode

The ability to detect single photons has led to the advancement of numerous research fields. Although various types of single-photon detector have been developed, because of two main factors - that is, (1) the need for operating at cryogenic temperature and (2) the incompatibility with complementary metal-oxide-semiconductor (CMOS) fabrication processes - so far, to our knowledge, only Si-based single-photon avalanche diode (SPAD) has gained mainstream success and has been used in consumer electronics. With the growing demand to shift the operation wavelength from near-infrared to short-wavelength infrared (SWIR) for better safety and performance, an alternative solution is required because Si has negligible optical absorption for wavelengths beyond 1 μm. Here we report a CMOS-compatible, high-performing germanium-silicon SPAD operated at room temperature, featuring a noise-equivalent power improvement over the previous Ge-based SPADs by 2-3.5 orders of magnitude. Key parameters such as dark count rate, single-photon detection probability at 1,310 nm, timing jitter, after-pulsing characteristic time and after-pulsing probability are, respectively, measured as 19 kHz μm^2, 12%, 188 ps, ~90 ns and <1%, with a low breakdown voltage of 10.26 V and a small excess bias of 0.75 V. Three-dimensional point-cloud images are captured with direct time-of-flight technique as proof of concept. This work paves the way towards using single-photon-sensitive SWIR sensors, imagers and photonic integrated circuits in everyday life.

physics.ins-det