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Pol Van Dorpe

Publications and source records attributed to Pol Van Dorpe.

At least 19 recordsLinked to original sources
arXiv2026

Micro-transfer Printed Blue InGaN Lasers on Silicon Nitride Photonic Integrated Circuits

Expanding integrated photonics into the blue spectral range requires high-performance light sources, making the gallium nitride (GaN) material family indispensable. While silicon nitride (SiN) platforms offer a robust, CMOS compatible passive ecosystem for visible wavelengths, seamlessly integrating GaN lasers remains a major bottleneck. Conventional heterogeneous integration methods present distinct trade-offs: full-wafer bonding achieves high throughput but requires careful management of thermal and lattice mismatches across large areas, whereas flip-chip bonding ensures high yield through pretesting but is constrained by sequential processing speed. In this landscape, micro-transfer printing (MTP) emerges as a disruptive, material-efficient alternative, bypassing these limitations by combining high-density parallel integration with known-good-die selection. Applying MTP to GaN, however, presents a significant material challenge: due to its chemical inertness and strong III-N bonds, device release typically relies on electrochemical etching, which can compromise material quality. Here, we overcome this hurdle and demonstrate the first micro-transfer printed blue lasers on a SiN platform. Using a heavily doped n-type sacrificial layer together with optimized electrochemical etching conditions, we release smooth-surfaced thin-film light sources from bulk GaN substrates. Following release, the devices are integrated and butt-coupled to SiN fork-shaped edge couplers, achieving high current densities exceeding 20 kA$/$cm$^2$ alongside lasing at 455 nm. These results expand the visible integrated photonic toolkit and establish a framework for multi-wavelength integration, opening new avenues for next-generation technologies including flow cytometry, quantum computing, optical communications, and augmented/virtual reality.

physics.optics↗
arXiv2026

Heterogeneously Integrated Efficient and Widely Tunable Lasers at 795 nm for Rubidium-Based Quantum Technologies

Scaling quantum processors and optical atomic clocks fundamentally requires orders-of-magnitude reductions in the size, weight, power, and cost of optical control systems. Photonic integration of lasers is critical to fulfill these requirements. At the near-infrared wavelengths required for atomic clocks and quantum computing through manipulation of rubidium atoms, laser integration is hindered by difficulty in light coupling and poor heat dissipation. Here, we introduce a wafer-scalable method utilizing micro-transfer printing to integrate GaAs-based amplifiers in etched recesses, directly butt-coupled to silicon nitride waveguides. We demonstrate extended-cavity single-mode lasers using this integration approach. Our compact microgear laser achieves a narrow 3 kHz fundamental linewidth at an on-chip output power of >22 mW -- a record for a single-mode heterogeneously integrated laser in the 780-800 nm band -- with a wall-plug efficiency of 9.4%, showcasing the high-power and efficiency potential of this integration approach. Additionally, we demonstrate a widely tunable laser leveraging Vernier filters to achieve lasing with 9 nm coarse tuning, a quasi-continuous fine-tuning range exceeding 140 GHz, and a mode-hop-free tuning range of 45 GHz. Our scalable integrated laser toolkit shows great promise for replacing macroscopic external-cavity diode lasers in next-generation quantum technologies and optical atomic clocks.

physics.optics↗
arXiv2026

A Heterogeneous 200 mm Silicon Nitride Photonics Platform for Visible-to-Near-Infrared Applications via Micro-Transfer Printing

The commercialization of next-generation technologies, including optical interconnects, quantum computing, AR/VR, and medical diagnostics, requires a low-loss photonic platform offering compact, multifunctional systems in the visible and near-infrared range. Although silicon nitride (SiN) is an excellent material due to its ultra-low loss and broad transparency window, integrating active components such as light sources, modulators and photodetectors from diverse material platforms in a scalable, reliable way remains challenging. Micro-transfer printing is an emerging wafer-scale heterogeneous integration technology that can be implemented as a back-end post-processing step without disrupting the primary in-line fabrication process. In this work, we present a dual LPCVD SiN layer platform fabricated in a 200 mm CMOS pilot line, that incorporates micro-transfer printing modules, allowing the integration of active components on well defined recesses. A hydrogenated amorphous silicon layer is also available to increase the versatility of the platform allowing for evanescently-coupled III-V lasers as well as other passive functionality in the near-infrared region. We report full wafer-scale measurements showing low optical SiN losses of 4 dB/cm and 0.23 dB/cm at a wavelength of 488 nm and 940 nm respectively. In addition, a transition loss of only 0.35 dB is obtained from the SiN to the a-Si:H layer, in good agreement with simulated values. Finally, to showcase more advanced functionality, GaAs-based gain sections are micro-transfer printed on several dies, achieving consistent die-to-die lasing at 970 nm with on-chip optical powers of approximately 1 mW. These results showcase the potential of the integrated photonics platform towards unlocking a wide range of new applications in the sub-1-$μ$m spectral region.

physics.optics↗
arXiv2026

Precise Positional Readout of Molecular Barcode Structures using Solid-State Nanopores

Fast and nonuniform translocation through solid-state nanopores limits both the detection of small molecular labels and their precise localization along molecular carriers. In this work we report the detection and localization performance of nucleotide-based molecular labels along double-stranded DNA scaffolds using solid-state nanopores in thin planar membranes. For small labels that are challenging to resolve individually, we introduce an anchoring strategy where readily detectable bulky labels serve as reference points to align multiple translocation events, enabling population-based detection and localization of smaller molecular features. The measured anchor positions constrain a probabilistic model of translocation velocity, identifying the most probable velocity profile for each event and enabling nonlinear trace "unwarping" for improved multi-event alignment. A complementary window-based evidence aggregation procedure accumulates weak but consistent label signatures across events, enabling detection of features that are individually masked by noise. These approaches enable robust recovery of single-dumbbell labels (DB1) on the order of 28 nucleotides and reduce mean localization errors to as low as 10 base pairs for DB3 labels and 40 base pairs for DB1 labels when averaging over multiple events. Stronger fractional DNA-associated current blockades, used as proxy for smaller pore geometries, are additionally associated with improved detection and lower localization error across membrane-based nanopore fabrication techniques. Overall, anchor-guided alignment provides a route to higher-density molecular information readout without compromising throughput via controlled translocation approaches.

q-bio.BM↗
arXiv2026

Latent space mapping of interpretable structural coordinates from stochastic single-molecule signals

Nanopores are versatile single-molecular sensors, but their utility is fundamentally constrained by stochastic translocation dynamics warping any encoded information. We resolve it by shifting from time-domain analysis to a learned latent-space mapping via a contrastive encoder trained exclusively on simulated signals from a physics-informed model. This encoder maps solid-state nanopore signals of engineered DNA barcodes into an interpretable molecular coordinate system. The learned representation is responsive to structural barcode parameters while remaining invariant to acquisition conditions and translocation conformation, allowing data pooling across devices. Molecule identification requires a single pass through the encoder, reducing computational cost by three orders of magnitude relative to alignment-based methods. We experimentally validate through mixture quantification, rare-variant detection, consensus barcode reconstruction, and real-time signal acquisition. This shift from temporal analysis to mapping structural coordinates into a latent space changes the paradigm behind analyzing stochastic sensor signals by linking classification to interpretable encoded molecular information.

physics.ins-det↗
arXiv2026

Cryogenic piezoelectric effects in thin film strontium titanate devices

Next generation quantum technologies will need to rely on efficient transduction between electrical, optical, and mechanical quantum degrees of freedom to generate large-scale entanglement over large distances. The performance of such transducers is fundamentally limited by the cryogenic properties of the underlying materials. Here, we demonstrate that engineering strain in ferroelectric thin-film strontium titanate ($\mathrm{SrTiO_3}$) not only results in an exceptionally large Pockels coefficient, but also in a robust linear piezoelectric response at cryogenic temperatures, surpassing previous thin-film benchmarks. We measure piezoelectric tensor elements of $d_{15} = 151.8 \pm 1.5$ pm/V and $d_{33} = 54.8 \pm 4$ pm/V, and an effective photoelastic coefficient of $p_{\mathrm{eff}}$ = 0.56 at 5~K. Utilizing these enhanced properties, we demonstrate the first $\mathrm{SrTiO_3}$-on-oxide acousto-optic modulator with a voltage-length product ($V_πL$) of $0.874 \pm 0.084$ V cm, outperforming state-of-the-art unreleased modulators that typically feature a $V_πL$ of a few V cm. Our results establish thin-film $\mathrm{SrTiO_3}$ as a promising material system for integrated quantum photonics operating at cryogenic temperatures.

physics.optics↗
arXiv2025

Micro-Transfer Printed Continuous-Wave and Mode-Locked Laser Integration at 800 nm on a Silicon Nitride Platform

Applications such as augmented and virtual reality (AR/VR), optical atomic clocks, and quantum computing require photonic integration of (near-)visible laser sources to enable commercialization at scale. The heterogeneous integration of III-V optical gain materials with low-loss silicon nitride waveguides enables complex photonic circuits with low-noise lasers on a single chip. Previous such demonstrations are mostly geared towards telecommunication wavelengths. At shorter wavelengths, limited options exist for efficient light coupling between III-V and silicon nitride waveguides. Recent advances in wafer-bonded devices at these wavelengths require complex coupling structures and suffer from poor heat dissipation. Here, we overcome these challenges and demonstrate a wafer-scale micro-transfer printing method integrating functional III-V devices directly onto the silicon substrate of a commercial silicon nitride platform. We show butt-coupling of efficient GaAs-based amplifiers operating at 800 nm with integrated saturable absorbers to silicon nitride cavities. This resulted in extended-cavity continuous-wave and mode-locked lasers generating pulse trains with repetition rates ranging from 3.2 to 9.2 GHz and excellent passive stability with a fundamental radio-frequency linewidth of 519 Hz. These results show the potential to build complex, high-performance fully-integrated laser systems at 800 nm using scalable manufacturing, promising advances for AR/VR, nonlinear photonics, timekeeping, quantum computing, and beyond.

physics.optics↗
arXiv2024

Low-Loss and Low-Power Silicon Ring Based WDM 32$\times$100 GHz Filter Enabled by a Novel Bend Design

Ring resonators are crucial in silicon photonics for various applications, but conventional designs face performance trade-offs. Here a third-order polynomial interconnected circular (TOPIC) bend is proposed to revolutionize the ring designs fundamentally. The TOPIC bend has a unique feature of continuous curvature and curvature derivative, which is theoretically derived to be essential for waveguide loss optimization. With the TOPIC bend, the silicon ring resonators demonstrated here have achieved three records to the best of our knowledge: the smallest radius (0.7 $\mathrm{μm}$) for silicon rings resonating with single guided mode, the lowest thermal tuning power (5.85 mW/$π$) for silicon rings with FSR $\geq$3.2 THz, and the first silicon ring-based WDM 32$\times$100 GHz filter. The filter has doubled the channel amount compared to the state of the art, and meanwhile achieved low insertion loss (1.91 $\pm$ 0.28 dB) and low tuning power (283 GHz/mW). Moreover, the TOPIC bend is not limited to ring applications, it can also be used to create bends with an arbitrary angle, with the advantages of ultra-compact radius and heater integration, which are expected to replace all circular bends in integrated photonics, greatly reducing system size and power consumption.

physics.optics↗
arXiv2023

Modelling semiconductor spin qubits and their charge noise environment for quantum gate fidelity estimation

The spin of an electron confined in semiconductor quantum dots is currently a promising candidate for quantum bit (qubit) implementations. Taking advantage of existing CMOS integration technologies, such devices can offer a platform for large scale quantum computation. However, a quantum mechanical framework bridging a device's physical design and operational parameters to the qubit energy space is lacking. Furthermore, the spin to charge coupling introduced by intrinsic or induced Spin-Orbit-Interaction (SOI) exposes the qubits to charge noise compromising their coherence properties and inducing quantum gate errors. We present here a co-modelling framework for double quantum dot (DQD) devices and their charge noise environment. We use a combination of an electrostatic potential solver, full configuration interaction quantum mechanical methods and two-level-fluctuator models to study the quantum gate performance in realistic device designs and operation conditions. We utilize the developed models together alongside the single electron solutions of the quantum dots to simulate one- and two- qubit gates in the presence of charge noise. We find an inverse correlation between quantum gate errors and quantum dot confinement frequencies. We calculate X-gate fidelities >97% in the simulated Si-MOS devices at a typical TLF densities. We also find that exchange driven two-qubit SWAP gates show higher sensitivity to charge noise with fidelities down to 91% in the presence of the same density of TLFs. We further investigate the one- and two- qubit gate fidelities at different TLF densities. We find that given the small size of the quantum dots, sensitivity of a quantum gate to the distance between the noise sources and the quantum dot creates a strong variability in the quantum gate fidelities which can compromise the device yields in scaled qubit technologies.

cond-mat.mes-hall↗
arXiv2023

Microwave Properties of Ba-Substituted Pb(Zr$_{0.52}$Ti$_{0.48}$)O$_3$ after Chemical-Mechanical Polishing

We have studied the effect of chemical-mechanical polishing (CMP) on the ferroelectric, piezoelectric, and microwave dielectric properties of Ba-substituted PZT (BPZT), deposited by pulsed laser deposition. CMP allowed for the reduction of the root mean square surface roughness of 600 nm thick BPZT films from 12.1nm to 0.79 nm. Ammonium peroxide (SC-1) cleaning was effective to remove Si CMP residuals. Measurements of the ferroelectric hysteresis after CMP indicated that the ferroelectric properties of BPZT were only weakly affected by CMP, while the piezoelectric d33 coefficient and the microwave permittivity were reduced slightly by 10%. This can be attributed to the formation of a thin dead layer at the BPZT surface. Moreover, the intrinsic dielectric permittivity at microwave frequencies between 1 and 25 GHz was not influenced by CMP, whereas the dead layer series capacitance decreased by 10%. The results indicate that the CMP process can be used to smoothen the BPZT surface without affecting the film properties strongly.

physics.app-ph↗
arXiv2022

Low charge noise quantum dots with industrial CMOS manufacturing

Silicon spin qubits are among the most promising candidates for large scale quantum computers, due to their excellent coherence and compatibility with CMOS technology for upscaling. Advanced industrial CMOS process flows allow wafer-scale uniformity and high device yield, but off the shelf transistor processes cannot be directly transferred to qubit structures due to the different designs and operation conditions. To therefore leverage the know-how of the micro-electronics industry, we customize a 300mm wafer fabrication line for silicon MOS qubit integration. With careful optimization and engineering of the MOS gate stack, we report stable and uniform quantum dot operation at the Si/SiOx interface at milli-Kelvin temperature. We extract the charge noise in different devices and under various operation conditions, demonstrating a record-low average noise level of 0.61 $μ$eV/${\sqrt{Hz}}$ at 1 Hz and even below 0.1 $μ$eV/${\sqrt{Hz}}$ for some devices and operating conditions. By statistical analysis of the charge noise with different operation and device parameters, we show that the noise source can indeed be well described by a two-level fluctuator model. This reproducible low noise level, in combination with uniform operation of our quantum dots, marks CMOS manufactured MOS spin qubits as a mature and highly scalable platform for high fidelity qubits.

cond-mat.mes-hall↗
arXiv2022

Sieve of Eratosthenes for Bose-Einstein Condensates in Optical Moiré Lattices

We catalog known optical moiré lattices and uncover exotic lattice configurations following a geometric analog of the ancient sieve of Eratosthenes algorithm for finding prime numbers. Rich dynamics of Bose-Einstein condensates loaded into these optical lattices is revealed from numerical simulations of time-of-flight interference patterns. What sets this method apart is the ability to tune the periodicity of the optical lattices without changing the wavelength of the laser, yet maintaining the local potential at the individual lattices sites. In addition, we discuss the ability to spatially translate the optical lattice through applying a structured phase only.

cond-mat.quant-gas↗
arXiv2021

Analysis tools for single-monomer measurements of self-assembly processes

Protein assembly plays an important role throughout all phyla of life, both physiologically and pathologically. In particular, aggregation and polymerization of proteins are key-strategies that regulate cellular function. In recent years, methods to experimentally study the assembly process on a single-molecule level have been developed. This progress concomitantly has triggered the question of how to analyze this type of single-filament data adequately and what experimental conditions are necessary to allow a meaningful interpretation of the analysis. Here, we developed two analysis methods for single-filament data: the visitation analysis and the average-rate analysis. We benchmarked and compared both approaches with the classic dwell-time-analysis frequently used to study microscopic association and dissociation rates. In particular, we tested the limitations of each analysis method along the lines of the signal-to-noise ratio, the sampling rate, and the labeling efficiency and bleaching rate of the fluorescent dyes used in single-molecule fluorescence experiments. Finally, we applied our newly developed methods to study the monomer assembly of actin at the single-molecule-level in the presence of the class II nucleator Cappuccino and the WH2 repeats of Spire. For Cappuccino, our data indicated fast elongation circumventing a nucleation phase whereas, for spire, we found that the four WH2 motifs are not sufficient to promote de novo nucleation of actin.

physics.bio-ph↗
arXiv2021

High mobility SiMOSFETs fabricated in a full 300mm CMOS process

The quality of the semiconductor-barrier interface plays a pivotal role in the demonstration of high quality reproducible quantum dots for quantum information processing. In this work, we have measured SiMOSFET Hall bars on undoped Si substrates in order to investigate the quality of the devices fabricated in a full CMOS process. We report a record mobility of 17'500 cm2/Vs with a sub-10 nm oxide thickness indicating a high quality interface, suitable for future qubit applications. We also study the influence of gate materials on the mobilities and discuss the underlying mechanisms, giving insight into further material optimization for large scale quantum processors.

cond-mat.mes-hall↗
arXiv2020

Revival and Expansion of the Theory of Coherent Lattices

An effective way to design structured coherent wave interference patterns that builds on the theory of coherent lattices, is presented. The technique combines prime number factorization in the complex plane with moiré theory to provide a robust way to design structured patterns with variable spacing of intensity maxima. In addition, the proposed theoretical framework facilitates an elegant computation of previously unexplored high-order superlattices both for the periodic and quasiperiodic case. A number of beam configurations highlighting prime examples of patterns for lattices with three-, four-, and fivefold symmetry are verified in a multibeam interference experiment.

nlin.PS↗
arXiv2015

Surface enhanced Raman spectroscopy using a single mode nanophotonic-plasmonic platform

Surface Enhanced Raman Spectroscopy (SERS) is a well-established technique for enhancing Raman signals. Recently photonic integrated circuits have been used, as an alternative to microscopy based excitation and collection, to probe SERS signals from external metallic nanoparticles. However, in order to develop quantitative on-chip SERS sensors, integration of dedicated nanoplasmonic antennas and waveguides is desirable. Here we bridge this gap by demonstrating for the first time the generation of SERS signals from integrated bowtie nanoantennas, excited and collected by a single mode waveguide, and rigorously quantify the enhancement process. The guided Raman power generated by a 4-Nitrothiophenol coated bowtie antenna shows an 8 x 10^6 enhancement compared to the free-space Raman scattering. An excellent correspondence is obtained between the theoretically predicted and observed absolute Raman power. This work paves the way towards fully integrated lab-on-a-chip systems where the single mode SERS-probe can be combined with other photonic, fluidic or biological functionalities.

physics.optics↗
arXiv2014

Near-field aperture-probe as a magnetic dipole source and optical magnetic field detector

Scanning near-field field optical microscopy (SNOM) is a technique, which allows sub-wavelength optical imaging of photonic structures. While the electric field components of light can be routinely obtained, imaging of the magnetic components has only recently become of interest. This is so due to the development of artificial materials, which enhance and exploit the typically weak magnetic light-matter interactions to offer extraordinary optical properties. Consequently, both sources and detectors of the magnetic field of light are now required. In this paper, assisted by finite-difference time-domain simulations, we suggest that the circular aperture at the apex of a metal coated hollow-pyramid SNOM probe can be approximated by a lateral magnetic dipole source. This validates its use as a detector for the lateral magnetic near-field, as illustrated here for a plasmonic nanobar sample. Verification for a dielectric sample is currently in progress. We experimentally demonstrate the equivalence of the reciprocal configurations when the probe is used as a source (illumination mode) and as a detector (collection mode). The simplification of the probe to a simple magnetic dipole facilitates the simulations and the understanding of the near-field images.

physics.optics↗