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Pouria Emtenani

Publications and source records attributed to Pouria Emtenani.

2 recordsLinked to original sources

Nanoscale origin of thermal anisotropy in monoclinic \texorpdfstring{$β$-Ga$_2$O$_3$}{beta-Ga2O3}

Monoclinic $β$-Ga$_2$O$_3$ is a promising ultra-wide-bandgap semiconductor for power electronics, but its low and anisotropic thermal conductivity limits heat removal, making it a compelling model system for nanoscale thermal transport studies. Here, we demonstrate a pronounced nanoscale enhancement of thermal anisotropy and uncover the underlying phonon mechanism by combining complementary thermal and acoustic spectroscopy techniques with first-principles calculations. Anisotropic thermoreflectance thermometry determines the full thermal-conductivity tensor from angular measurements within the (100), (010), and (001) crystallographic planes. Angle-resolved Brillouin light scattering reveals that low-frequency acoustic phonons exhibit only weak velocity anisotropy, insufficient to account for the measured thermal anisotropy. Frequency-resolved ab initio Green--Kubo calculations show that the bulk anisotropy pattern emerges only when the accumulated conductivity includes phonon modes above 4 THz, whereas the sub 3 THz acoustic contributions are nearly isotropic. Extreme-ultraviolet transient thermal grating spectroscopy reveals that reducing the grating period to 28 nm strongly enhances the in-plane thermal anisotropy, most markedly in the (001) plane, where it reaches nearly twice its macroscopic value. Reconstructed and calculated mean-free-path (MFP) accumulation functions link this enhancement to the stronger directional contrast of short-MFP phonons. Together, these results identify high-frequency, short-MFP phonons as the dominant origin of thermal anisotropy in $β$-Ga$_2$O$_3$, while low-frequency phonons attenuate the directional contrast at macroscopic scales.

cond-mat.mtrl-sci↗

Microscopic Origin of Temperature-Dependent Anisotropic Heat Transport in Ultrawide-Bandgap Rutile GeO2

Ultrawide-bandgap rutile GeO2 is emerging as a promising semiconductor for power electronics, where efficient heat dissipation is essential to suppress self-heating and ensure device reliability. However, the temperature dependence and microscopic origin of its anisotropic heat transport have remained experimentally unresolved. Here, temperature-dependent time-domain thermoreflectance measurements combined with first-principles phonon transport calculations are used to quantify the thermal conductivity of single-crystal rutile GeO2 from 80 to 350 K along [001] and [110]. At 295 K, the thermal conductivity reaches 47.5 W m^-1 K^-1 along [001] and 32.5 W m^-1 K^-1 along [110], corresponding to an anisotropy ratio of 1.46, in good agreement with theory. Rather than following a simple T^(-1) law, the thermal conductivity exhibits an approximate T^(-1.4) dependence, indicating additional scattering beyond purely three-phonon-limited transport. Mode-resolved analysis reveals that the room-temperature anisotropy originates from the combined effect of larger phonon group velocities along [001] and direction-dependent phonon lifetimes. Upon cooling, depopulation of high-frequency phonons progressively suppresses their contribution to heat transport and reduces the anisotropy. The temperature-dependent thermal boundary conductance of Al/rutile GeO2 interfaces is further resolved, and the scaled conductance indicates predominantly elastic interfacial transport. These findings establish the microscopic basis of bulk and interfacial heat transport in rutile GeO2 and position this material as a promising thermally robust platform for ultrawide-bandgap electronics.

cond-mat.mtrl-sci↗