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Prachi Venkat

Publications and source records attributed to Prachi Venkat.

4 recordsLinked to original sources

Helicity-engineered nonlinear optical responses in photo-excited topological semimetals

Topological materials provide a transformative arena for light-driven control of electronic motion; yet, direct manipulation of electron dynamics on sub-cycle timescale remains a significant challenge. We demonstrate that the strong-field-driven high-harmonic generation of a Weyl semimetal can be controlled and manipulated through bicircular pump-probe driving fields. While a lone probe pulse generates exclusively odd-order harmonics, the addition of a pump pulse triggers a series of sidebands arising from nonlinear frequency mixing of pump and probe photons. Our results reveal that the sideband intensities are highly sensitive to the relative helicity of the pulses and the orientation of the polarization plane. This sensitivity stems from the chiral nature of the Weyl nodes, which couples efficiently to the light's helicity only when the node-separation axis is perpendicular to the polarization plane. Furthermore, the significant suppression of sideband intensity with increasing pump-probe delay identifies these features as a potential clock for electron-hole decoherence. These findings establish frequency-mixed high-harmonic generation as a sensitive probe of chiral quantum dynamics and suggest a robust framework for manipulating topological currents via structured light, with implications for lightwave electronics and ultrafast quantum information processing.

physics.optics

Wavelength dependence of laser-induced excitation dynamics in silicon

Effect of laser wavelength on the carrier-phonon dynamics and damage threshold of silicon is studied numerically. Laser excitation dynamics in silicon is studied using Three-Temperature Model (3TM). We consider the evolution of electron, hole, and lattice temperatures separately and including band-gap re-normalization effect on optical properties of silicon. Finite Difference Time Domain method is used to model the laser field. Damage threshold calculated using the 3TM is in reasonable agreement with the experiments. Our results indicate that the competition of inter-band excitation, plasma heating, and electron-phonon relaxation process defines the damage threshold for various wavelengths and pulse durations.

physics.optics

Three-temperature modeling of laser-induced damage process in silicon

Laser excitation in silicon from femto- to pico-second time scales is studied. We assume the Three-Temperature Model (3TM) which describes the dynamics of the distinct quasi-temperatures for electrons, holes, and lattice. Numerical results for damage threshold reproduce the experimental results not only quantitatively, but qualitatively as well, showing dependence on laser pulse duration. Comparison with experimental data suggests that electron emission and thermal melting are both responsible for damage in silicon. We found that electron-phonon relaxation time has a significant effect on pulse duration dependence of electron emission.

physics.optics

Electron excitation rate in dielectrics under an intense elliptically polarized laser field

Electron excitation in dielectrics is studied for an elliptically polarized laser field. As the first step, we develop an analytical formula for electron excitation rate under elliptically polarized laser as the extension of our previous work [T.Otobe et. al., JPSJ88(2019) 024709]. In the next step, we calculate the excitation rate depending on the band structure by assuming direction dependence of reduced mass. We find that although the ellipticity decreases the excitation rate significantly in an isotropic system, the energy oscillation of electrons due to the intra-band dynamics in the anisotropic band structure increases the excitation rate with higher ellipticity. Our results indicate that we can control the excitation rate in dielectrics by varying the ellipticity, depending on the band anisotropy.

physics.optics