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Pramey Upadhyaya

Publications and source records attributed to Pramey Upadhyaya.

At least 19 recordsLinked to original sources

Octupole-driven spin torque switching of antiferromagnetic tunnel junctions

Magnetic tunnel junctions (MTJs) based on ferromagnets are canonical devices in spintronics, with wide-ranging applications in data storage, computing, and sensing. They simultaneously exhibit mechanisms for electrical detection and control of magnetic order through the tunneling magnetoresistance (TMR) and spin-transfer torque (STT) effects, respectively. It was long assumed that neither of these effects could be sizeable in all-antiferromagnetic tunnel junctions (AATJs), since they exhibit no net magnetization. Recently, however, it was shown that AATJs based on chiral antiferromagnets do exhibit TMR due to their non-relativistic momentum-dependent spin polarization and cluster magnetic octupole moment (CMO), which are manifestations of their spin-split band structure. However, the reciprocal effect, i.e., the antiferromagnetic counterpart of STT, has been assumed non-existent due to the total electric current being spin-neutral. Here, we report nanoscale AATJs exhibiting this reciprocal effect, which we term octupole-driven spin-transfer torque (OTT). We demonstrate current-induced OTT switching of PtMn3|MgO|PtMn3 AATJs, exhibiting a TMR value of 363% at room temperature and switching current densities of the order of 10 MA/cm2. Our theoretical modeling explains the origin of OTT in terms of the imbalance between intra- and inter-sublattice spin currents across the AATJ, and equivalently, in terms of the non-zero net cluster octupole polarization of each PtMn3 layer. This work establishes a new materials platform for antiferromagnetic spintronics and provides a pathway towards deeply scaled magnetic memory and room-temperature terahertz technologies.

cond-mat.mtrl-sci↗

Size-Dependent Band-Tail Localization in Oxide Semiconductors Revealed by Direct Density-of-States Mapping

Disorder-induced localization is expected to become increasingly important as amorphous oxide semiconductor transistors are scaled toward low-dimensional channels, yet the electronic states responsible for this transport regime remain difficult to resolve experimentally. Here, we use a lock-in-based electric-field penetration technique to directly map the effective density of states (DOS) in In-based oxide semiconductor thin-film transistors (TFTs). The extracted quantum capacitance, carrier density, and chemical potential reveal a disorder-dominated transport regime in which band-tail states are not merely passive traps, but become screening-active and partially transport-active. Geometry-dependent DOS mapping shows an exponential suppression of the effective DOS with channel length, demonstrating size-dependent band-tail localization and providing a microscopic origin for a distinct localization-induced threshold-voltage roll-off mechanism. Temperature-dependent measurements show that the disorder-dominated DOS is strongly suppressed at low temperatures, while extended diffusive states remain nearly unchanged, confirming the localization origin. By tuning film thickness, O2 annealing, and In/Ga/Zn composition, we further demonstrate systematic suppression of disorder and effective-DOS localization. This work establishes direct DOS mapping as a device-level probe of localization physics and provides a pathway for engineering disorder in low-dimensional oxide semiconductor electronics.

cond-mat.mes-hall↗

Acoustic-phonon-driven spin-lattice relaxation of the hBN boron vacancy in the sub-THz regime

The negatively charged boron vacancy center in hexagonal boron nitride is a premier candidate for quantum sensing, yet its performance is critically limited by longitudinal spin-lattice relaxation time ($T_1$). A microscopic understanding of spin relaxation in the high magnetic field regime remains elusive, as the relevant Zeeman transitions lie far below the optical phonon energies typically invoked to describe the relaxation process. Here, we apply an \textit{ab initio} acoustic mode spin-phonon relaxation theory to this problem and quantitatively reproduce the experimental magnetic field and temperature dependence of $T_1$ without empirical fitting parameters. We demonstrate that the relaxation dynamics are driven by a direct one-phonon emission and absorption process resonant with the Zeeman splitting. Furthermore, we identify the out-of-plane flexural phonon branch which is unique to two-dimensional hosts, as the primary source of decoherence, creating a distinct low-energy spectral function that facilitates spin relaxation. Our results provide a microscopic interpretation of the experimentally observed non-monotonic field and temperature dependence in two-dimensional quantum defect centers.

cond-mat.mtrl-sci↗

Noncollinear spin textures and 90° domain walls in twisted XY magnets

Twisted moiré magnets are promising in exploring noncollinear magnetic phases, yet current experimental studies have been restricted to uniaxial magnets, limiting the accessible phase space. Here, we demonstrate noncollinear moiré magnetism based on XY magnet CrCl3. The tunneling magnetoconductance of twisted CrCl3 exhibits multiple field-driven transitions in small-twist-angle devices, attributed to the coexisting antiferromagnetic and ferromagnetic domains with distinct susceptibilities. The inferred spin configuration depends on the layer number, reflecting the interlayer coupling strength between twisted layers. This moiré magnetism is remarkably robust, persisting up to twisted double nine-layer stacks. Combined with micromagnetic simulations, we identify the ground state as the predicted "twisted-s" phase featuring 90° domain walls. Finally, we demonstrate voltage control of these noncollinear phases, highlighting the electrically tunable twist-spintronics.

cond-mat.mes-hall↗

Exploiting Negative Capacitance for Unconventional Coulomb Engineering

The many-body ground state of a two-dimensional electron system can be tuned by Coulomb engineering through control of the dielectric environment. However, in conventional dielectrics the static permittivity is restricted to positive values, limiting the accessible interaction regimes. Here we argue that the negative capacitance demonstrated in appropriately engineered structures can open new vistas for Coulomb engineering. The associated negative permittivity could transform the natural repulsive interaction of electrons into an attractive one, raising the intriguing possibility of nontrivial ground states, including superconductivity. Using models of two-dimensional electron systems with linear and parabolic dispersion relations coupled to environments with negative capacitance, we estimate the strength and sign of the engineered Coulomb interaction and outline parameter regimes that could stabilize correlated electronic phases.

cond-mat.mes-hall↗

Sub-Terahertz Spin Relaxation Dynamics of Boron-Vacancy Centers in Hexagonal Boron Nitride

Quantum sensors based on spin-defect relaxation have become powerful tools for detecting faint magnetic signals, yet their operation has remained largely confined to low magnetic fields and gigahertz frequencies. Extending such sensors into high-field ($> 0.3$ T) and sub-terahertz regimes would enable quantum metrology across a wide range of electromagnetic phenomena and scientific applications, but has proven challenging. Here, we demonstrate that negatively charged boron vacancies ($\mathrm{V_B^-}$) in two-dimensional hexagonal boron nitride can function as relaxation-based quantum sensors operating up to 0.2 terahertz. Their uniform spin-orientation and persistent spin-contrast at high fields enable direct measurement of intrinsic spin relaxation across previously unexplored temperature and frequency regimes. We also reveal a crossover in relaxation behavior \textemdash initially decreasing at low fields before rising at higher fields \textemdash consistent with the emergence of single-phonon-induced resonant noise that becomes significant at sub-terahertz frequencies. These results establish $\mathrm{V_B^-}$ centers as a versatile platform for quantum sensing in the sub-terahertz, high-field regime.

quant-ph↗

Emergent Synaptic Plasticity from Tunable Dynamics of Probabilistic Bits

Probabilistic (p-) computing, which leverages the stochasticity of its building blocks (p-bits) to solve a variety of computationally hard problems, has recently emerged as a promising physics-inspired hardware accelerator platform. A functionality of importance for p-computers is the ability to program-and reprogram-the interaction strength between arbitrary p-bits on-chip. In natural systems subject to random fluctuations, it is known that spatiotemporal noise can interact with the system's nonlinearities to render useful functionalities. Leveraging that principle, here we introduce a novel scheme for tunable coupling that inserts a ''hidden'' p-bit between each pair of computational p-bits. By modulating the fluctuation rate of the hidden p-bit relative to the synapse speed, we demonstrate both numerically and analytically that the effective interaction between the computational p-bits can be continuously tuned. Moreover, this tunability is directional, where the effective coupling from one computational p-bit to another can be made different from the reverse. This synaptic-plasticity mechanism could open new avenues for designing (re-)configurable p-computers and may inspire novel algorithms that leverage dynamic, hardware-level tuning of stochastic interactions.

cond-mat.dis-nn↗

Electrically Tunable Picosecond-scale Octupole Fluctuations in Chiral Antiferromagnets

We present a theory for the relaxation time of the octupole order parameter in nanoscale chiral antiferromagnets (AFMs) coupled to thermal baths and spin injection sources. Using stochastic spin dynamics simulations, we demonstrate that the octupole moment relaxes through two distinct mechanisms$-$escape over a barrier and precessional dephasing$-$as the barrier for octupole fluctuations is lowered relative to the thermal energy. Notably, the octupole moment relaxes orders of magnitude faster than the typical dipolar order parameters, reaching picosecond timescales. By combining Langer's theory with an effective low-energy description of octupole dynamics in chiral AFMs, we derive analytical expressions for the relaxation times. We find that relaxation in chiral AFMs parallels dipole relaxation in XY magnets, with exchange fields serving the role of the dipole fields. Further, by drawing on the analogy between order parameter dynamics in XY magnets under spin injection and current-biased Josephson junctions, we propose a new scheme for electrically tuning the octupole relaxation times. Our work offers fundamental insights for the development of next-generation spintronic devices that harness octupole order parameters for information encoding, especially in octupole-based probabilistic computing.

cond-mat.mes-hall↗

Emergence of electric-field-tunable interfacial ferromagnetism in 2D antiferromagnet heterostructures

Van der Waals (vdW) magnet heterostructures have emerged as new platforms to explore exotic magnetic orders and quantum phenomena. Here, we study heterostructures of layered antiferromagnets, CrI3 and CrCl3, with perpendicular and in-plane magnetic anisotropy, respectively. Using magneto-optical Kerr effect microscopy, we demonstrate out-of-plane magnetic order in the CrCl3 layer proximal to CrI3, with ferromagnetic interfacial coupling between the two. Such an interlayer exchange field leads to higher critical temperature than that of either CrI3 or CrCl3 alone. We further demonstrate significant electric-field control of the coercivity, attributed to the naturally broken structural inversion symmetry of the heterostructure allowing unprecedented direct coupling between electric field and interfacial magnetism. These findings illustrate the opportunity to explore exotic magnetic phases and engineer spintronic devices in vdW heterostructures.

cond-mat.mtrl-sci↗

Electrically tunable moiré magnetism in twisted double bilayers of chromium triiodide

Moiré superlattices in van der Waals structures can be used to control the electronic properties of the material and lead to emergent correlated and topological phenomena. Its first demonstration in van der Waals magnets exhibited noncollinear states and domain structures with, however, limited manipulation. Here we report electrically tunable moiré magnetism in twisted double bilayers - that is, a bilayer plus a bilayer with a twist angle between them - of layered antiferromagnet CrI3. Using magneto-optical Kerr effect microscopy, we observe the coexistence of antiferromagnetic and ferromagnetic order with nonzero net magnetization - a hallmark of moiré magnetism. Such magnetic state extends over a wide range of twist angles (with transitions at around 0° and above 20°) and exhibits a nonmonotonic temperature dependence. We further demonstrate voltage-assisted magnetic switching. The observed nontrivial magnetic states and unprecedented control by twist angle, temperature and electrical gating are supported by the simulated phase diagram of the moiré magnetism.

cond-mat.mtrl-sci↗

Discovery of a high-temperature antiferromagnetic state and transport signatures of exchange interactions in a Bi2Se3/EuSe heterostructure

Spatial confinement of electronic topological surface states (TSS) in topological insulators poses a formidable challenge because TSS are protected by time-reversal symmetry. In previous works formation of a gap in the electronic spectrum of TSS has been successfully demonstrated in topological insulator/magnetic material heterostructures, where ferromagnetic exchange interactions locally lifts the time-reversal symmetry. Here we report an experimental evidence of exchange interaction between a topological insulator Bi2Se3 and a magnetic insulator EuSe. Spin-polarized neutron reflectometry reveals a reduction of the in-plane magnetic susceptibility within a 2 nm interfacial layer of EuSe, and the combination of SQUID magnetometry and Hall measurements points to the formation of an antiferromagnetic layer with at least five-fold enhancement of Néel's temperature. Abrupt resistance changes in high magnetic fields indicate interfacial exchange coupling that affects transport in a TSS. High temperature local control of TSS with zero net magnetization unlocks new opportunities for the design of electronic, spintronic and quantum computation devices, ranging from quantization of Hall conductance in zero fields to spatial localization of non-Abelian excitations in superconducting topological qubits.

cond-mat.mes-hall↗

A Platform for Braiding Majorana Modes with Magnetic Skyrmions

After a decade of intense theoretical and experimental efforts, demonstrating braiding of Majorana modes remains an unsolved problem in condensed matter physics due to platform specific challenges. In this work, we propose topological superconductor -- magnetic multilayer heterostructures with on-chip microwave cavity readout as a novel platform for initializing, braiding and reading out Majorana modes. Stray fields from a skyrmion in the magnetic layers can nucleate a vortex in the topological superconducting layer. Such a vortex is known to host Majorana bound states at its core. Through analytical calculations within London and Thiele formalisms, and through micromagnetic simulations, we show that our nucleation and braiding scheme can be effectively realized with a variety of existing options for magnetic and superconducting layers. Further, we show that the coupling of the Majorana bound states to electric field of a resonator leads to an experimentally observable parity-dependent dispersive shift of the resonator frequency. Our work paves the way for realizing Majorana braiding in the near future.

cond-mat.mes-hall↗

Greatly Enhanced Emission from Spin Defects in Hexagonal Boron Nitride Enabled by a Low-Loss Plasmonic Nano-Cavity

Two-dimensional hexagonal boron nitride (hBN) has been known to host a variety of quantum emitters with properties suitable for a broad range of quantum photonic applications. Among them, the negatively charged boron vacancy (VB-) defect with optically addressable spin states has emerged recently due to its potential use in quantum sensing. Compared to spin defects in bulk crystals, VB- preserves its spin coherence properties when placed at nanometer-scale distances from the hBN surface, enabling nanometer-scale quantum sensing. On the other hand, the low quantum efficiency of VB- has hindered its use in practical applications. Several studies have reported improving the overall quantum efficiency of VB- defects using plasmonic effects; however, the overall enhancements of up to 17 times reported to date are relatively modest. In this study, we explore and demonstrate much higher emission enhancements of VB- with ultralow-loss nano-patch antenna (NPA) structures. An overall intensity enhancement of up to 250 times is observed for NPA-coupled VB- defects. Since the laser spot exceeds the area of the NPA, where the enhancement occurs, the actual enhancement provided by the NPA is calculated to be ~1685 times, representing a significant increase over the previously reported results. Importantly, the optically detected magnetic resonance (ODMR) contrast is preserved at such exceptionally strong enhancement. Our results not only establish NPA-coupled VB- defects as high-resolution magnetic field sensors operating at weak laser powers, but also provide a promising approach to obtaining single VB- defects.

physics.optics↗

Electrically Active Domain Wall Magnons in Layered van der Waals Antiferromagnets

We study theoretically domain wall (DW) magnons-elementary collective excitations of magnetic DWs -- in easy-axis layered van der Waals (vdW) antiferromagnets, where they behave as normal modes of coupled spin superfluids. We uncover that, due to spin-charge coupling in vdW magnets, such DW magnons can be activated by voltage-induced torques, thereby providing a path for their low-dissipation and nanoscale excitation. Moreover, the electrical activation and the number of DW magnons at a frequency can be controlled by applying symmetry-breaking static magnetic field, adding tunability of signal transmission by them. Our results highlight that domain walls in vdW magnets provide a promising platform to route coherent spin information for a broad range of explorations in spintronics and magnetism.

cond-mat.mes-hall↗

Correlative nanoscale imaging of strained hBN spin defects

Spin defects like the negatively charged boron vacancy color center ($V_B^-$) in hexagonal boron nitride (hBN) may enable new forms of quantum sensing with near-surface defects in layered van der Waals heterostructures. Here, we reveal the effect of strain associated with creases in hBN flakes on $V_B^-$ and $V_B$ color centers in hBN with correlative cathodoluminescence and photoluminescence microscopies. We observe strong localized enhancement and redshifting of the $V_B^-$ luminescence at creases, consistent with density functional theory calculations showing $V_B^-$ migration toward regions with moderate uniaxial compressive strain. The ability to manipulate these spin defects with highly localized strain offers intriguing possibilities for future 2D quantum sensors.

cond-mat.mes-hall↗

Manipulating quantum impurity spins via dynamical modes of nanomagnets

Quantum impurity (QI) spins offer promising information processing and sensing applications by harnessing up to room-temperature quantum coherence. Challenged by the requirement of designing local coherent drives and improving sensitivity to various signals for such applications, the search of hybrid systems coupling QI spins with matter excitations have garnered significant recent interest. We propose and theoretically study a hybrid system that couples spin-1 QI with the dynamical excitations of nanomagnets, which are controlled by mechanisms uncovered in classical spintronics. We show that in such systems the QI-spin decoherence, due to coupling to thermally excited modes of the nanomagnet, can be designed across a wide range by exploiting the control over nanomagnet's mode ellipticity and the chiral nature of the coupling between the QI spin and nanomagnet. On the other hand, when activated electrically via voltage-induced torques, we demonstrate that QI spins can be driven coherently with large quality factors at room temperature by leveraging inherent non-linear precessional modes of the nanomagnet. Our results provide theoretical guidance for enabling unique quantum spintronic functionalities, such as local coherent driving of QI spins up to ambient conditions, and the design of nanomagnet-enhanced QI-based hybrid sensors.

cond-mat.mes-hall↗

High-contrast plasmonic-enhanced shallow spin defects in hexagonal boron nitride for quantum sensing

The recently discovered spin defects in hexagonal boron nitride (hBN), a layered van der Waals material, have great potential in quantum sensing. However, the photoluminescence and the contrast of the optically detected magnetic resonance (ODMR) of hBN spin defects are relatively low so far, which limits their sensitivity. Here we report a record-high ODMR contrast of 46$\%$ at room temperature, and simultaneous enhancement of the photoluminescence of hBN spin defects by up to 17-fold by the surface plasmon of a gold-film microwave waveguide. Our results are obtained with shallow boron vacancy spin defects in hBN nanosheets created by low-energy He$^+$ ion implantation, and a gold-film microwave waveguide fabricated by photolithography. We also explore the effects of microwave and laser powers on the ODMR, and improve the sensitivity of hBN spin defects for magnetic field detection. Our results support the promising potential of hBN spin defects for nanoscale quantum sensing.

quant-ph↗

Electric field control of interaction between magnons and quantum spin defects

Hybrid systems coupling quantum spin defects (QSD) and magnons can enable unique spintronic device functionalities and probes for magnetism. Here, we add electric field control of magnon-QSD coupling to such systems by integrating ferromagnet-ferroelectric multiferroic with nitrogen-vacancy (NV) center spins. Combining quantum relaxometry with ferromagnetic resonance measurements and analytical modeling, we reveal that the observed electric-field tuning results from ferroelectric polarization control of the magnon-generated fields at the NV. Exploiting the demonstrated control, we also propose magnon-enhanced hybrid electric field sensors with improved sensitivity.

cond-mat.mes-hall↗