arXiv subjects

Prasanta Muduli

Publications and source records attributed to Prasanta Muduli.

4 recordsLinked to original sources

arXiv2023

Electrical detection of interfacial exchange field at the (ferromagnetic insulator)|(normal metal) interface using spin-dependent scattering

The spin-orbit field and interfacial exchange field are two major interface phenomena, and the detection and manipulation of these fields can enable a variety of nanoscale spintronics devices. Optimizing the interfacial exchange field, which governs the spin-dependent scattering asymmetry at (ferromagnetic insulator)-(normal metal) interfaces, will pave the way for next-generation nanoscale, low-power insulator spintronics devices. Here, we demonstrate an experimental pathway to detect an interfacial exchange field between insulating ferromagnet EuS and non-magnetic Cu using magnetoresistance measurements, and show that the spin-dependent scattering at the common interface can lead to a significant current-in-plane magnetoresistance in Py$|$Cu$|$EuS trilayer Hall-bar device. Our experiment suggests that simple magnetoresistance measurements can be used to experimentally detect the interfacial exchange field and thereby the magnetic state of a ferromagnetic insulator.

cond-mat.mes-hall↗

arXiv2022

Charge to Spin Conversion in van der Waals Metal NbSe2

Quantum materials with a large charge current-induced spin polarization are promising for next-generation all-electrical spintronic science and technology. Van der Waals metals with high spin-orbit coupling and novel spin textures have attracted significant attention for an efficient charge to spin conversion process. Here, we demonstrate the electrical generation of spin polarization in NbSe2 up to room temperature. To probe the current-induced spin polarization in NbSe2, we used a graphene-based non-local spin-valve device, where the spin-polarization in NbSe2 is efficiently injected and detected using non-local spin-switch and Hanle spin precession measurements. A significantly higher charge-spin conversion in NbSe2 is observed at a lower temperature, below the superconducting transition temperature Tc ~ 7 K of NbSe2. However, the charge-spin conversion signal could only be observed with a higher bias current above the superconducting critical current, limiting the observation of the signal only to the non-superconducting state of NbSe2. Systematic measurements provide the possible origins of the spin polarization to be predominantly due to the spin Hall effect or Rashba-Edelstein effect in NbSe2, considering different symmetry allowed charge-spin conversion processes.

cond-mat.mes-hall↗

arXiv2021

Local and nonlocal spin Seebeck effect in lateral Pt-$\mathrm{Cr_2O_3}$-Pt devices at low temperatures

We have studied thermally driven magnon spin transport (spin Seebeck effect, SSE) in heterostructures of antiferromagnetic $α$-$\mathrm{Cr_2O_3}$ and Pt at low temperatures. Monitoring the amplitude of the local and nonlocal SSE signals as a function of temperature, we found that both decrease with increasing temperature and disappear above 100 K and 20 K, respectively. Additionally, both SSE signals show a tendency to saturate at low temperatures. The nonlocal SSE signal decays exponentially for intermediate injector-detector separation, consistent with magnon spin current transport in the relaxation regime. We estimate the magnon relaxation length of our $α$-$\mathrm{Cr_2O_3}$ films to be around 500 nm at 3 K. This short magnon relaxation length along with the strong temperature dependence of the SSE signal indicates that temperature-dependent inelastic magnon scattering processes play an important role in the intermediate range magnon transport. Our observation is relevant to low-dissipation antiferromagnetic magnon memory and logic devices involving thermal magnon generation and transport.

cond-mat.mes-hall↗

arXiv2019

Phenomenological model for the direct and inverse Edelstein effects

We have developed a phenomenological model that connects the direct and the inverse Edelstein effects. Our model implies a trade-off relation between the conversion coefficients for the direct and inverse effects. Thus, a large conversion coefficient for the inverse effect does not necessarily bring a large conversion coefficient for the direct effect. Instead of these coefficients, we propose a figure of merit of Edelstein effects which consists of two factors; one of them represents the magnitude of the spin-orbit coupling, and the other represents the strength of the hybridization between bulk and interface states. Both of them are quit important for the efficient conversion through Edelstein effects. To test our model, we measured the inverse and direct Edelstein effects at the Bi2O3/Cu interface using spin absorption method with a non-local spin valve structure and calculated the conversion coefficients. The effective spin Hall angle reaches ~0.09 in this system. This relatively large value is attributable to not only the large spin-orbit coupling but also the strong hybridization between the interface and bulk states at the Bi2O3/Cu interface.

cond-mat.mtrl-sci↗