arXiv subjects

Prashant Shahi

Publications and source records attributed to Prashant Shahi.

9 recordsLinked to original sources

arXiv2026

Pressure induced electronic band evolution and observation of superconductivity in the Dirac semimetal ZrTe5

We report a comprehensive investigation of the pressure effects on the magnetotransport properties of the topological material ZrTe5 within 1 to 8 GPa pressure range. With increasing pressure, the characteristic peak (Tp) in its electrical resistivity first shifts to higher temperature and then moves quickly towards the lower temperature before disappearing eventually at 6 GPa. Beyond 6 GPa, the system exhibits metallic behavior across the entire temperature range, and superconductivity emerges below Tc = 1.8 K at 8 GPa. Based on the systematic magnetotransport measurement under pressure, we demonstrate that the superconductivity occurs following a significant electronic structure modulation possibly due to pressure induced structural changes near 6 GPa, which coincides with dramatic enhancement of the magnetoresistance (MR) reaching up to 1400 percent. Our experimental results are substantiated by density functional theory calculations as the application of pressure drastically alters the density of states near the Fermi level. Notably, multiple hole pockets emerge at the Fermi level from 4 GPa onward, and their contributions are further enhanced with increasing pressure. The combined experimental and theoretical investigation reveals a comprehensive evolution of electronic structure of Dirac semimetal ZrTe5 under pressure and suggest a possible link between the Fermi surface reconstruction in the pressure range of structural transition and emergence of superconductivity

cond-mat.mtrl-sci↗

arXiv2025

Effect of pressure on the transport properties and thermoelectric performance of Dirac semimetal ZrTe5

In this study, we have investigated and compared the effect of hydrostatic pressure up to ~20 kbar on the transport properties of ZrTe5 single crystals grown by chemical vapor transport (CVT) and flux methods. With the application of pressure, the electrical resistivity Rho(T) and thermopower S(T) of both crystals were found to increase in the whole temperature range unlike the other known thermoelectric materials, such as Bi2Te3, SnSe etc. This observation is supported by the complementary first-principles band structure calculation as the application of pressure widens the direct bandgap at {\Gamma} point. Moreover, the analysis of the pressure dependent magneto-transport and Shubnikov de-Hass oscillation results revealed an increase in carrier concentration and effective mass along with the reduction of mobility as pressure rises. Furthermore, with the application of pressure, the flux-grown ZrTe5 crystals display a transition from unipolar to bipolar charge transport as evidenced by the emergence of resistivity peak at T* under high pressure, unlike the CVT-grown ZrTe5 crystals where the bipolar charge transport near its characteristic resistivity peak (Tp) remains unaffected.

cond-mat.mtrl-sci↗

arXiv2024

Effect of antisite disorder on the magnetic and transport properties of a quaternary Heusler alloy

Spin gapless semiconductors based Heusler alloys are the special class of materials due to their unique band structure, high spin polarization and high Curie temperature. These materials exhibit a distinct electronic structure: a nonzero band gap in one spin channel while the other spin channel remains gapless, making them highly suitable for tunable spintronics. In this study, a comprehensive analysis of structural, magnetic, thermoelectric, and transport properties of the quaternary Heusler alloy CoFeMnSn is conducted. X-ray diffraction and Neutron diffraction analyses confirm a well ordered structure with partial antisite disorder between Co, Fe and Mn, Sn atoms. Magnetic studies show that the material exhibits room-temperature ferromagnetism, with a Curie temperature of around 660 K. Notably, we observe an anomalous Hall effect linked to intrinsic mechanisms driven by Berry curvature, underscoring the intricate relationship between structural disorder and electronic behavior. Transport measurements also highlight the impact of antisite disorder on the systems, with resistivity decreasing as temperature increases. These insights position CoFeMnSn as a promising material for future spintronic devices and advanced technological applications.

cond-mat.mtrl-sci↗

arXiv2019

Pressure induced Superconductivity and location of Fermi energy at Dirac point in BiSbTe3

We have grown single-crystal BiSbTe3 3D TI sample and studied structural, TE as well as pressure dependent magneto-transport properties. Large positive Seebeck coefficient confirmed the p-type nature of BiSbTe3, which is consistent with Hall measurement. We have also studied the electronic band structure using Laser-based ARPES, which revealed the existence of a Dirac-cone like metallic surface state in BiSbTe3 with a Dirac Point situated exactly at the Fermi level. Additionally, superconductivity emerges under pressure of 8 GPa with a critical temperature of ~2.5 K. With further increase of pressure, the superconducting transition temperature (Tc) increases and at 14 GPa it shows the maximum Tc (~3.3 K).

cond-mat.supr-con↗

arXiv2018

Anomalous and Topological Hall effect in Cu doped Sb2Te3 Topological Insulator

The magneto-transport and magnetization measurements of Sb1.90Cu0.10Te3 were performed at different temperatures and different fields. Magneto-transport measurement at high field indicates the coexistence of both bulk and surface states. The magnetization shows the induced antiferromagnetic ordering with Cu doping and the observed quantum oscillation in it indicates that magnetization in Sb1.90Cu0.10Te3 is the bulk property. The non linearity in Hall data suggests the existence of anomalous and topological Hall effect. The anomalous and topological Hall effect (THE) from measured hall data of Cu doped Sb2Te3 topological insulator have been evaluated.

cond-mat.mes-hall↗

arXiv2014

Effect of dilution of both A- and B- sites on the multiferroic properties of spinal Mott insulators

The structural, magnetic, electrical and transport properties of FeV2O4, by doping Li and Cr ions respectively in A and B sites, have been studied. Dilution of A-site by Li doping increases the ferri-magnetic ordering temperature and decreases the ferroelectric transition temperature. This also decreases the V-V distances which in effect increases the A-V coupling. This increased A-V coupling dominates over the decrease in A-V coupling due to doping of non-magnetic Li. On the other hand, Cr doping increases the ferri-magnetic ordering temperature but does not alter the ferroelectric transition temperature which is due to the fact that the polarization origin to the presence of almost non-substituted regions.

cond-mat.str-el↗

arXiv2014

Effect of Li doping on magnetic and transport properties of CoV2O4 and FeV2O4

The structural, magnetic and transport properties have been studied of Li doped CoV2O4 and FeV2O4. Li doping increases the ferri-magnetic ordering temperature of both the samples but decreases the spin-glass transition temperature of CoV2O4. The Li-doping decreases the V-V distance which in effect increases the A-V coupling. Thus the increased A-V coupling dominate over the decrease in A-V coupling due to doping of non-magnetic Li.

cond-mat.str-el↗

arXiv2014

Effect of Zn doping on the Magneto-Caloric effect and Critical Constants of Mott Insulator MnV2O4

X-ray absorption near edge spectra (XANES) and magnetization of Zn doped MnV2O4 have been measured and from the magnetic measurement the critical exponents and magnetocaloric effect have been estimated. The XANES study indicates that Zn doping does not change the valence states in Mn and V. It has been shown that the obtained values of critical exponents \b{eta}, γ and δ do not belong to universal class and the values are in between the 3D Heisenberg model and the mean field interaction model. The magnetization data follow the scaling equation and collapse into two branches indicating that the calculated critical exponents and critical temperature are unambiguous and intrinsic to the system. All the samples show large magneto-caloric effect. The second peak in magneto-caloric curve of Mn0.95Zn0.05V2O4 is due to the strong coupling between orbital and spin degrees of freedom. But 10% Zn doping reduces the residual spins on the V-V pairs resulting the decrease of coupling between orbital and spin degrees of freedom.

cond-mat.str-el↗

arXiv2013

Magnetic and Structural properties of $MnV_{2}O_{4}$

Magnetization, neutron diffraction and X-ray diffraction of Zn doped MnV2O4 as a function of temperature have been measured and the critical exponents and magnetocaloric effect of this system have been estimated. It is observed, that with increase in Zn substitution the noncollinear orientation of Mn spins with the V spins decreases which effectively leads to the decrease of structural transition temperature more rapidly than Curie temperature. It has been shown that the obtained values of {\beta}, {\gamma} and {\delta} from different methods match very well. These values do not belong to universal class and the values are in between the 3D Heisenberg model and mean field interaction model. The magnetization data follow the scaling equation and collapse into two branches indicating that the calculated critical exponents and critical temperature are unambiguous and intrinsic to the system. The observed double peaks in magneto-caloric curve of Mn0.95Zn0.05V2O4 is due to the strong distortion of VO6 octahedra.

cond-mat.str-el↗