arXiv subjects

Prashant Singh

Publications and source records attributed to Prashant Singh.

97 records · Page 6Linked to original sources

arXiv2017

Learning Surrogate Models of Document Image Quality Metrics for Automated Document Image Processing

Computation of document image quality metrics often depends upon the availability of a ground truth image corresponding to the document. This limits the applicability of quality metrics in applications such as hyperparameter optimization of image processing algorithms that operate on-the-fly on unseen documents. This work proposes the use of surrogate models to learn the behavior of a given document quality metric on existing datasets where ground truth images are available. The trained surrogate model can later be used to predict the metric value on previously unseen document images without requiring access to ground truth images. The surrogate model is empirically evaluated on the Document Image Binarization Competition (DIBCO) and the Handwritten Document Image Binarization Competition (H-DIBCO) datasets.

cs.CV↗

arXiv2017

Automatic Document Image Binarization using Bayesian Optimization

Document image binarization is often a challenging task due to various forms of degradation. Although there exist several binarization techniques in literature, the binarized image is typically sensitive to control parameter settings of the employed technique. This paper presents an automatic document image binarization algorithm to segment the text from heavily degraded document images. The proposed technique uses a two band-pass filtering approach for background noise removal, and Bayesian optimization for automatic hyperparameter selection for optimal results. The effectiveness of the proposed binarization technique is empirically demonstrated on the Document Image Binarization Competition (DIBCO) and the Handwritten Document Image Binarization Competition (H-DIBCO) datasets.

cs.IR↗

arXiv2017

Better band gaps for wide-gap semiconductors from a locally corrected exchange-correlation potential that nearly eliminates self-interaction errors

This work constitutes a comprehensive and improved account of electronic-structure and mechanical properties of silicon-nitride (Si3N4) polymorphs via van Leeuwen and Baerends (LB) exchange-corrected local density approximation (LDA) that enforces the exact exchange potential asymptotic behavior. The calculated lattice constant, bulk modulus, and electronic band structure of Si3N4 polymorphs are in good agreement with experimental results. We also show that, for a single electron in a hydrogen atom, spherical well, or harmonic oscillator, the LB-corrected LDA reduces the (self-interaction) error to exact total energy to ~10%, a factor of three to four lower than standard LDA, due to a dramatically improved representation of the exchange-potential.

cond-mat.mtrl-sci↗

arXiv2017

Band-gap tuning and optical response of two-dimensional Si$_x$C$_{1-x}$: A first-principles real space study of disordered 2D materials

We present a real-space formulation for calculating the electronic structure and optical conductivity of such random alloys based on the Kubo-Greenwood formalism interfaced with the augmented space recursion (ASR) [A. Mookerjee, J. Phys. C: Solid State Phys. {\bf 6}, 1340 (1973)] formulated with the Tight-binding Linear Muffin-tin Orbitals (TB-LMTO) basis with van Leeuwen-Baerends corrected exchange (vLB) [Singh et al, Phys. Rev B {\bf 93}, 085204, (2016)]. This approach has been used to quantitatively analyze the effect of chemical disorder on the configuration averaged electronic properties and optical response of 2D honeycomb siliphene Si$_{x}$C$_{1-x}$ beyond the usual Dirac-cone approximation. We predicted the quantitative effect of disorder on both the electronic-structure and optical response over a wide energy range, and the results discussed in the light of the available experimental and other theoretical data. Our proposed formalism may open up a facile way for planned band gap engineering in opto-electronic applications.

cond-mat.mtrl-sci↗

arXiv2016

Hidden and coexistent magnetic phases in Kondo-type Cerium Hexaboride (CeB6)

The heavy fermion material CeB6 shows hidden magnetic ordered phases. Besides well-known Ferromagnetic(FM) and Antiferromagnetic(AFM) phases, CeB6 is speculated to form a unique antiferroquadrupolar (AFQ) phase that is orbital in nature. Hidden from many characterization methods that cannot assess orbital ordering, debate continue on the origins. From electronic-structure calculations, we find that these three phases are energetically almost degenerate, suggesting that magnetic domain walls form, possibly with defect boundaries. Only calculations with spin-orbit coupling reproduce most band structures and Fermi surfaces, as found in experiment, indicating the importance of crystal-field splitting. Simulated ionization peaks, i.e., Ce f0 and f1 states, also agree with photoemission data. Small pressures stabilizes the AFM over the FM phase, which is the observed phase at low temperature. We propose to realize such small physical pressure under various situations e.g. effect of intrinsic defects such as vacancies, antisites, surface effects etc.

cond-mat.str-el↗

arXiv2016

Better Band Gaps with Asymptotically Corrected Local Exchange Potentials

We formulate a spin-polarized van Leeuwen and Baerends (vLB) correction to the local density approximation (LDA) exchange potential [Phys. Rev. A 49, 2421 (1994)] that enforces the ionization potential (IP) theorem following Stein et al. [Phys. Rev. Lett. 105, 266802 (2010)]. For electronic-structure problems, the vLB-correction replicates the behavior of exact-exchange potentials, with improved scaling and well-behaved asymptotics, but with the computational cost of semi-local functionals. The vLB+IP corrections produces large improvement in the eigenvalues over that from LDA due to correct asympotic behavior and atomic shell structures, as shown on rare-gas, alkaline-earth, zinc-based oxides, alkali-halides, sulphides, and nitrides. In half-Heusler alloys, this asymptotically-corrected LDA reproduces the spin-polarized properties correctly, including magnetism and half-metallicity. We also considered finite-sized systems [e.g., ringed boron-nitirde (B$_{12}$N$_{12}$) and graphene (C$_{24}$)] to emphasize the wide applicability of the method.

cond-mat.mtrl-sci↗

arXiv2015

Electronic structure, magnetism and antisite disorder in CoFeCrGe and CoMnCrAl quaternary Heusler alloys

We present a combined theoretical and experimental study of two quaternary Heusler alloys CoFeCrGe (CFCG) and CoMnCrAl (CMCA), promising candidates for spintronics applications. Magnetization measurement shows the saturation magnetization and transition temperature to be $3\; μ_B$, $866$ K and $0.9 \; μ_B$, $358$ K for CFCG and CMCA respectively. The magnetization values agree fairly well with our theoretical results and also obey the Slater-Pauling rule, a prerequisite for half metallicity. A striking difference between the two systems is their structure; CFCG crystallizes in fully ordered Y-type structure while CMCA has L2$_1$ disordered structure. The antisite disorder adds a somewhat unique property to the second compound, which arises due to the probabilistic mutual exchange of Al positions with Cr/Mn and such an effect is possibly expected due to comparable electronegativities of Al and Cr/Mn. {\it Ab-initio} simulation predicted a unique transition from half metallic ferromagnet to metallic antiferromagnet beyond a critical excess amount of Al in the alloy.

cond-mat.mtrl-sci↗