arXiv subjects

Prince Khatri

Publications and source records attributed to Prince Khatri.

4 recordsLinked to original sources

arXiv2021

Excited State Spectroscopy of Boron Vacancy Defects in Hexagonal Boron Nitride using Time-Resolved Optically Detected Magnetic Resonance

We report optically detected magnetic resonance (ODMR) measurements of an ensemble of spin-1 negatively charged boron vacancies in hexagonal boron nitride. The photoluminescence decay rates are spin-dependent, with inter-system crossing rates of $1.02~\mathrm{ns^{-1}}$ and $2.03~\mathrm{ns^{-1}}$ for the $m_s=0$ and $m_s=\pm 1$ states, respectively. Time-gating the photoluminescence enhances the ODMR contrast by discriminating between different decay rates. This is particularly effective for detecting the spin of the optically excited state, where a zero-field splitting of $\vert D_{ES}\vert=2.09~\mathrm{GHz}$ is measured. The magnetic field dependence of the time-gated photoluminescence exhibits dips corresponding to the Ground (GSLAC) and excited-state (ESLAC) anti-crossings. Additional dips corresponding to anti-crossings with nearby spin-1/2 parasitic impurities are also observed. The ESLAC dip is sensitive to the angle of the external magnetic field. Comparison to a model suggests that the anti-crossings are mediated by the interaction with nuclear spins, and allow an estimate of the ratio of the spin-dependent relaxation rates from the singlet back into the triplet ground state of $κ_0/κ_1=0.34$. This work provides important spectroscopic signatures of the boron vacancy, and information on the spin pumping and read-out dynamics.

cond-mat.mtrl-sci↗

arXiv2021

Stimulated Emission Depletion Microscopy with Color Centers in Hexagonal Boron Nitride

Stimulated emission depletion, or STED microscopy is a well-established super-resolution technique, but is ultimately limited by the chosen flourophore. Here we demonstrate STED microscopy with color centers in nanoscale flakes of hexagonal boron nitride using time-gated continuous wave STED. For color centers with zero phonon line emission around 580 nm we measure a STED cross-section of (5.5 $\pm$ 3.2) x $10^{-17} \mbox{cm}^{2}$, achieve a resolution of $\sim$ 50 nm and resolve two color centers separated by 250 nm, which is less than the diffraction limit. The achieved resolution is limited by the numerical aperture of the objective lens (0.8) and the available laser power, and we predict that a resolution of sub-10 nm can be achieved with an oil immersion objective lens, similar to state-of-the-art resolution obtained with nitrogen vacancy centers in diamond.

cond-mat.mes-hall↗

arXiv2020

Stimulated emission depletion spectroscopy of color centers in hexagonal boron nitride

We demonstrate the use of Stimulated Emission Depletion (STED) spectroscopy to map the electron-optical-phonon sideband of the ground state of the radiative transition of color centers in hexagonal boron nitride emitting at 2.0-2.2 eV, with in-plane linear polarization. The measurements are compared to Photoluminescence of Excitation (PLE) spectra, that maps the electron-optical-phonon sideband of the excited state. The main qualitative difference is a red-shift in the longitudinal optical phonon peak associated with $E_{1u}$ symmetry at the zone center. We argue that this is consistent with recent findings for a carbon-based line defect with admixture of energetically similar excited states.

cond-mat.mes-hall↗

arXiv2020

Optical control of the charge state of color centers in hexagonal boron nitride

We report on multicolor excitation experiments with color centers in hexagonal boron nitride at cryogenic temperatures. We demonstrate controllable optical switching between bright and dark states of color centers emitting around 2eV. Resonant, or quasi-resonant excitation also pumps the color center, via a two-photon process, into a dark state, where it becomes trapped. Photoluminescence excitation spectroscopy reveals a defect dependent energy threshold for repumping the color center into the bright state of between 2.2 and 2.6eV. Photoionization and photocharging of the defect is the most plausible explanation for this behaviour, with the negative and neutral charge states of the boron vacancy potential candidates for the bright and dark states, respectively. Furthermore, a second zero phonon line, detuned by +0.4eV, is observed in absorption with orthogonal polarization to the emission, evidencing an additional energy level in the color center.

cond-mat.mes-hall↗