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Pritam Bhattacharyya

Publications and source records attributed to Pritam Bhattacharyya.

22 records · Page 2Linked to original sources

Influence of Edge Functionalization on Electronic and Optical Properties of Armchair Phosphorene Nanoribbons: a First-Principles Study

In this work, we present a systematic first-principles density-functional theory based study of geometry, electronic structure, and optical properties of armchair phosphorene nanoribbons (APNRs), with the aim of understanding the influence of edge passivation. Ribbons of width ranging from 0.33 nm to 3.8 nm were considered, with their edges functionalized with the groups H, OH, F, Cl, S, and Se. The geometries of various APNRs were optimized, and the stability was checked by calculating their formation energies. Using the relaxed geometries, calculations of their band structure and optical properties were performed. Pristine APNRs, as expected, exhibit significant edge reconstruction, rendering them indirect band gap semiconductors, except for one width {\normalsize{}($N=5$, where $N$ is the width parameter)} for which a direct band gap is observed. The edge passivated APNRs are found to be direct band gap semiconductors, with the band gap at the $Γ$-point, for all the functional groups considered in this work. To obtain accurate estimates of band gaps, calculations were also performed using HSE06 hybrid functional for several APNRs. Our calculations reveal that functional groups have significant influence on the band gaps and optical properties of narrower APNRs. For wider passivated ribbons, with the increasing ribbon widths, the gaps converge to almost the same value, irrespective of the group. We also performed calculations including the spin-orbit coupling (SOC) for hydrogen passivated APNRs with $N=5$ and 11. We found that SOC has no significant influence on the band structure of the studied APNRs. However, for the broader APNR, a lowering of peak intensities was observed in the optical absorption spectrum beyond 5 eV.

cond-mat.mes-hall↗

Tunability of electrical and thermoelectrical properties of monolayer MoS$_2$ through oxygen passivation

Electric and thermoelectric properties of strictly monolayer MoS$_2$ films, which are grown using a novel micro-cavity based CVD growth technique, have been studied under diverse environmental and annealing conditions. Resistance of a thermoelectric device that is fabricated on a continuous monolayer MoS$_2$ layer using photolithography technique has been found to reduce by about six orders of magnitudes upon annealing in vacuum at 525 K. Seebeck coefficient of the layer also reduces by almost an order of magnitude upon annealing. When the sample is exposed to oxygen atmosphere, these parameters return to their previous values. In fact, it has been found that the electron concentration, mobility as well as the thermoelectric power of the material can be tuned by controlling the temperature of annealing and oxygen exposure. Once established, these values are maintained as long as the layer is not exposed to oxygen environment. This can offer a unique way to control doping in the material provided an effective encapsulation method is devised. Such control is an important step forward for device application. The effect has been attributed to the passivation of di-sulfur vacancy donors present in the MoS$_2$ film by physisorbed oxygen molecules. Band structural calculations using density functional theory have been carried out, results of which indeed validate this picture.

cond-mat.mes-hall↗

Systematic First Principles Configuration-Interaction Calculations of Linear Optical Absorption Spectra in Silicon Hydrides : Si$_2$H$_{2n}$ ($n = 1-3$)

We have performed first principles electron-correlated calculations employing large basis sets to optimize the geometries, and to compute linear optical absorption spectra of various low-lying conformers of silicon hydrides: Si$_{2}$H$_{2n}$, $n=1,2,3$. The geometry optimization for various isomers was carried out at the coupled-cluster singles-doubles-perturbative-triples {[}CCSD(T){]} level of theory, while their excited states and absorption spectra were computed using a large-scale multi-reference singles-doubles configuration-interaction (MRSDCI) approach, which includes electron-correlation effects at a sophisticated level. Our calculated spectra are the first ones for Si$_{2}$H$_{2}$ and Si$_{2}$H$_{4}$ conformers, while for Si$_{2}$H$_{6}$ we obtain excellent agreement with the experimental measurements, suggesting that our computational approach is reliable. Our calculated absorption spectra exhibit a strong structure-property relationship, suggesting the possibility of identifying various conformers based on their optical absorption fingerprints. Furthermore, we have also performed geometry optimization for the selected optically excited states, providing us insights into their character.

physics.atm-clus↗

First Principles Study of Structural and Optical Properties of B$_{12}$ Isomers

In this work we undertake a comprehensive numerical study of the ground state structures and optical absorption spectra of isomers of B$_{12}$ cluster. Geometry optimization was performed at the coupled-cluster-singles-doubles (CCSD) level of theory, employing cc-pVDZ extended basis sets. Once the geometry of a given isomer was optimized, its ground state energy was calculated more accurately at the coupled-cluster-singles-doubles along with perturbative treatment of triples (CCSD(T)) level of theory, employing larger cc-pVTZ basis sets. Thus, our computed values of binding energies of various isomers are expected to be quite accurate. Our geometry optimization reveals eleven distinct isomers, along with their point group, and electronic ground state symmetries. We also performed vibrational frequency analysis on the three lowest energy isomers, and found them to be stable. Therefore, we computed the linear optical absorption spectra of these isomers of B$_{12}$, employing large-scale multi-reference singles-doubles configuration-interaction (MRSDCI) approach, and found a strong structure-property relationship. This implies that the spectral fingerprints of the geometries can be utilized for optical detection, and characterization, of various isomers of B$_{12}$. We also explored the stability of the isomer with with the structure of a perfect icosahedron, with $I_{h}$ symmetry. In bulk boron icosahedron is the basic structural unit, but, our vibrational frequency analysis reveals that it is unstable in the isolated form. We speculate that this instability could be due to Jahn-Teller distortion because five-fold degenerate HOMO orbitals in $I_{h}$ structure are unfilled.

physics.atm-clus↗