arXiv subjects

Prithwijit Mandal

Publications and source records attributed to Prithwijit Mandal.

16 recordsLinked to original sources

arXiv2026

Charge transfer and competing symmetry breaking drive orbital reconstruction and emergent ferromagnetism in insulating oxide superlattices

Electron correlation, hopping, and ligand-to-metal charge transfer collectively lead to diverse electronic and magnetic phenomena in 3$d$ transition-metal oxides, where directional d orbitals make hopping highly sensitive to symmetry-dependent orbital overlap. Heterostructure engineering with atomically flat interfaces adds symmetry-breaking charge transfer as a further route to emergent behavior, yet whether interfacial mismatch between constituent oxides of a superlattice shapes ground states independent of epitaxial strain remains unresolved. Here we examine superlattices combining NdNiO$_3$ with Mott-insulating NdMnO$_3$. Varying layer thickness and combining transport with X-ray spectroscopy, we show that electron transfer from NdMnO$_3$ to NdNiO$_3$ drives a room-temperature insulating state with a distinct electronic structure, accompanied by a reversal in orbital symmetry beyond simple strain considerations, underscoring the interface's central role. These reconstructions stabilize an emergent ferromagnetic insulating state arising from interfacial Ni$^{2+}$-O-Mn$^{4+}$ superexchange. Our results establish a pathway to interface-engineered ferromagnetic insulating phases via competing interactions, with potential for spin-insulatronic applications.

cond-mat.mtrl-sci↗

arXiv2026

Imaging GHz surface acoustic wave modes in electrostricted LaAlO$_3$/SrTiO$_3$ heterostructures

The LaAlO$_3$/SrTiO$_3$ (LAO/STO) interface hosts a gate-tunable superconducting two-dimensional electron gas (2DEG) which can be programmed to create quantum devices such as ballistic electron waveguides and quantum dots. To fully exploit this platform for quantum transport, a key requirement is the ability to shuttle single electrons, electron pairs, and other exotic states between spatially separated devices with precision. Surface acoustic waves (SAWs), which travel along the surface of a solid, offer a powerful route to achieve this through their moving electrical potential that captures and transfers electrons. %acoustoelectric coupling. In particular, SAWs in the GHz regime enable fast, controlled transport of individual quantum particles. Although this approach is well-explored in GaAs-based 2DEG, SAW generation in STO remains largely unexplored due to the lack of intrinsic piezoelectricity at room temperature. Here, we investigate room-temperature SAWs in LAO/STO and observe SAW modes up to 2.2 GHz with very low propagation loss of the order $10^{-3}$ dB per wavelength. To directly visualize these modes, we employ Atomic Acoustic Force Microscopy (AAFM), achieving sub-micron resolution imaging of the SAW wave forms, providing insight into the electrostriction-induced SAW generation mechanism. Our measurements indicate a shear horizontal-type mode, which provides the ability to couple to in-plane degrees of freedom for future acoustoelectric and quantum device applications. This work studies the fundamentals of SAW excitation and propagation on STO, a widely used and commercially available substrate, enabling straightforward coupling of SAWs to a broad range of materials that can be grown or transferred onto STO.

cond-mat.str-el↗

arXiv2025

Janus-faced influence of oxygen vacancy in high entropy oxide films with Mott electrons

Contrary to traditional approaches, high entropy oxides (HEOs) strategically employ cationic disorder to engineer tunable functionalities. This disorder, stemming from multiple elements at the same crystallographic site, disrupts local symmetry and induces local distortions. By examining a series of single-crystalline [La$_{0.2}$Pr$_{0.2}$Nd$_{0.2}$Sm$_{0.2}$Eu$_{0.2}$]NiO$_{3-\delta}$ thin films, we demonstrate herein that the creation of oxygen vacancies (OVs) further offers a powerful means of tailoring electronic behavior of HEOs by concurrently introducing disorder in the oxygen sublattice and doping electrons into the system. Increasing OV concentration leads to a monotonic increase in room-temperature sheet resistance. A striking feature is the Janus-faced response of the metal-insulator transition (MIT) to OVs due to the interplay among correlation energy scales, electron doping, and disorder. Unlike the monotonous influence of OV observed for the MIT in VO$_2$ and V$_2$O$_3$, initial OV doping lowers the MIT temperature here, whereas higher OV levels completely suppress the metallic phase. Magnetotransport measurements further reveal weak localization, strong localization as a function of $\delta$. Moreover, the disorder on both $RE$ and oxygen sublattices is responsible for the Mott-Anderson insulator state. These findings surpass the scope of the recently featured `electron antidoping' effect and demonstrate the promising opportunity to utilize OV engineering of HEOs for Mottronics and optoelectronics applications.

cond-mat.str-el↗

arXiv2025

Interfacial reconstruction effects in insulating double perovskite Nd$_2$NiMnO$_6$/SrTiO$_3$ and Nd$_2$NiMnO$_6$/NdGaO$_3$ thin films

Ferromagnetic insulating (FMI) double perovskite oxides (DPOs) $A_2BB'$O$_6$ with near-room-temperature Curie temperatures are promising candidates for ambient-temperature spintronics applications. To realize their potential, epitaxial stabilization of DPO films and understanding the effect of multiple broken symmetries across the film/substrate interface are crucial. This study investigates ultrathin films of the FMI Nd$_2$NiMnO$_6$ (NNMO) grown on SrTiO$_3$ (STO) and NdGaO$_3$ (NGO) substrates. By comparing growth on these substrates, we examine the influence of polarity and structural symmetry mismatches, which are absent in the NGO system. The interface exhibits immeasurable resistance in both cases. Using synchrotron X-ray diffraction, we show that films have three octahedral rotational domains because of the structural symmetry mismatch with the STO substrate. Furthermore, our coherent Bragg rod analysis of specular X-ray diffraction reveals a significant modification of the out-of-plane lattice parameter within a few unit cells at the film/substrate interface and the surface. This arises from polarity compensation and surface symmetry breaking, respectively. These structural alterations influence the Mn orbital symmetry, a dependence that we further confirm through X-ray linear dichroism measurements. Since the ferromagnetism in insulating DPOs is mediated by orbital-dependent superexchange interactions [Phys. Rev. Lett. 100, 186402 (2008)], our study provides a framework for understanding the evolution of magnetism in ultrathin geometry.

cond-mat.mtrl-sci↗

arXiv2025

Site-selective polar compensation of Mott electrons in a double perovskite heterointerface

Double perovskite oxides (DPOs) with two transition metal ions ($A_2$$BB^\prime$O$_6$) offer a fascinating platform for exploring exotic physics and practical applications. Studying these DPOs as ultrathin epitaxial thin films on single crystalline substrates can add another dimension to engineering electronic, magnetic, and topological phenomena. Understanding the consequence of polarity mismatch between the substrate and the DPO would be the first step towards this broad goal. We investigate this by studying the interface between a prototypical insulating DPO Nd$_2$NiMnO$_6$ and a wide-band gap insulator SrTiO$_3$. The interface is found to be insulating in nature. By combining several experimental techniques and density functional theory, we establish a site-selective charge compensation process that occurs explicitly at the Mn site of the film, leaving the Ni sites inert. We further demonstrate that such surprising selectivity, which cannot be explained by existing mechanisms of polarity compensation, is directly associated with their electronic correlation energy scales. This study establishes the crucial role of Mott physics in polar compensation process and paves the way for designer doping strategies in complex oxides.

cond-mat.mtrl-sci↗

arXiv2025

Beyond being free: glassy dynamics of SrTiO$_3$-based two-dimensional electron gas

Electron glasses offer a convenient laboratory platform to study glassy dynamics. Traditionally, the interplay between long-range Coulomb interactions and disorder is deemed instrumental in stabilizing the electron glass phase. Existing experimental studies on electron glass have focused on doped semiconductors, strongly correlated systems, granular systems, etc., all of which are far from the well-delocalized limit. In this work, we expand the study of electron glasses to a well-known quantum paraelectric SrTiO$_3$ (STO) and unveil a new scenario: how naturally occurring ferroelastic twin walls of STO could result in glassy electrons, even in a metallic state. We show that the emergent two-dimensional electron gas at the $γ$-Al$_2$O$_3$/STO interface exhibits long-lasting temporal relaxations in resistance and memory effects at low temperatures, which are hallmarks of glassiness. We also demonstrate that the glass-like relaxations could be further tuned by application of an electric field. This implies that the observed glassy dynamics is connected with the development of polarity near the structural twin walls of STO and the complex interactions among them, arising from the coupling between ferroelastic and ferroelectric orders. The observation of this glassy metal phase not only extends the concept of electron glasses to metallic systems with multiple order parameters but also contributes to the growing understanding of the fascinating and diverse physical phenomena that emerge near the quantum critical point.

cond-mat.str-el↗

arXiv2024

Quantum fluctuations lead to glassy electron dynamics in the good metal regime of electron doped KTaO3

One of the central challenges in condensed matter physics is to comprehend systems that have strong disorder and strong interactions. In the strongly localized regime, their subtle competition leads to glassy electron dynamics which ceases to exist well before the insulator-to-metal transition is approached as a function of doping. Here, we report on the discovery of glassy electron dynamics deep inside the good metal regime of an electron-doped quantum paraelectric system: KTaO$_3$. We reveal that upon excitation of electrons from defect states to the conduction band, the excess injected carriers in the conduction band relax in a stretched exponential manner with a large relaxation time, and the system evinces simple aging phenomena - a telltale sign of glassy dynamics. Most significantly, we observe a critical slowing down of carrier dynamics below 35 K, concomitant with the onset of quantum paraelectricity in the undoped KTaO$_3$. Our combined investigation using second harmonic generation technique, density functional theory and phenomenological modeling demonstrates quantum fluctuation-stabilized soft polar modes as the impetus for the glassy behavior. This study addresses one of the most fundamental questions regarding the potential promotion of glassiness by quantum fluctuations and opens a route for exploring glassy dynamics of electrons in a well-delocalized regime.

cond-mat.str-el↗

arXiv2023

Orthorhombic distortion drives orbital ordering in an antiferromagnetic 3$d^1$ Mott insulator

The orbital, which represents the shape of the electron cloud, very often strongly influences the manifestation of various exotic phenomena, e.g., magnetism, metal-insulator transition, colossal magnetoresistance, unconventional superconductivity etc. in solid-state systems. The observation of the antiferromagnetism in $RE$TiO$_3$ ($RE$=rare earth) series has been puzzling since the celebrated Kugel-Khomskii model of spin-orbital super exchange predicts ferromagnetism in an orbitally degenerate $d^1$ systems. Further, the existence of the orbitally ordered vs. orbital liquid phase in both antiferromagnetic and paramagnetic phase have been unsettled issues thus far. To address these long-standing questions, we investigate single crystalline film of PrTiO$_3$. Our synchrotron X-ray diffraction measurements confirm the retention of bulk-like orthorhombic ($D_{2h}$) symmetry in the thin film geometry. We observe similar X-ray linear dichroism signal in both paramagnetic and antiferromagnetic phase, which can be accounted by ferro orbital ordering (FOO). While the presence of $D_{2h}$ crystal field does not guarantee lifting of orbital degeneracy always, we find it to be strong enough in these rare-earth titanates, leading to the FOO state. Thus, our work demonstrates the orthorhombic distortion is the driving force for the orbital ordering of antiferromagnetic $RE$TiO$_3$.

cond-mat.str-el↗

arXiv2023

Flux-flow instability across Berezinskii Kosterlitz Thouless phase transition in KTaO$_3$ (111) based superconductor

The nature of energy dissipation in 2D superconductors under perpendicular magnetic field at small current excitations has been extensively studied over the past two decades. However, dissipation mechanisms at high current drives remain largely unexplored. Here we report on the distinct behavior of energy dissipation in the AlOx/KTaO$_3$ (111) system hosting 2D superconductivity in the intermediate disorder regime. The results show that below the Berezinskii Kosterlitz Thouless (BKT) phase transition temperature ($T_\mathrm{BKT}$), hot-spots and Larkin Ovchinnikov type flux-flow instability (FFI) are the major channels of dissipation, leading to pronounced voltage instability at large currents. Furthermore, such FFI leads to a rare observation of clockwise hysteresis in current-voltage characteristics within the temperature range $T_\mathrm{BKT} < T < T_\mathrm{C}$ ($T_\mathrm{C}$ is superconducting transition temperature). These findings deepen our understanding of how a BKT system ultimately transforms to a normal state under increasing current.

cond-mat.supr-con↗

arXiv2022

Electronic and magnetic properties of epitaxial thin film of Nd\tsubscript{0.5}Ba\tsuscriptb{0.5}MnO\tsubscript{3}

Contradictory reports about the electronic and magnetic behavior of bulk Nd0:5Ba0:5MnO3 with uniform disorder exist in the literature. In this work, we investigate the thin films of Nd0:5Ba0:5MnO3, grown by pulsed laser deposition. The success of epitaxial growth in a layer-by-layer mode and high quality of the films have been confirmed by in-situ reflection high energy electron diffraction, atomic force microscopy, X-ray reflectivity, and, X-ray diffraction. These films are found to be insulting and exhibit spin-glass behavior at low temperatures. The study offers an opportunity to tune the competition between charge/orbital ordering and ferromagnetism in half-doped manganites through heterostructure engineering.

cond-mat.mtrl-sci↗

arXiv2021

Electron trapping and detrapping in an oxide two-dimensional electron gas: The role of ferroelastic twin walls

The choice of electrostatic gating over the conventional chemical doping for phase engineering of quantum materials is attributed to the fact that the former can reversibly tune the carrier density without affecting the system's level of disorder. However, this proposition seems to break down in field-effect transistors involving SrTiO$_3$ (STO) based two-dimensional electron gases. Such peculiar behavior is associated with the electron trapping under an external electric field. However, the microscopic nature of trapping centers remains an open question. In this paper, we investigate electric field-induced charge trapping/detrapping phenomena at the conducting interface between band insulators $γ$-Al$_2$O$_3$ and STO. Our transport measurements reveal that the charge trapping under +ve back gate voltage ($V_g$) above the tetragonal to cubic structural transition temperature ($T_c$) of STO is contributed by the electric field-assisted thermal escape of electrons from the quantum well, and the clustering of oxygen vacancies (OVs) as well. We observe an additional source of trapping below the $T_c$, which arises from the trapping of free carriers at the ferroelastic twin walls of STO. Application of -ve $V_g$ results in a charge detrapping, which vanishes above $T_c$ also. This feature demonstrates the crucial role of structural domain walls in the electrical transport properties of STO based heterostructures. The number of trapped (detrapped) charges at (from) the twin wall is controlled by the net polarity of the wall and is completely reversible with the sweep of $V_g$.

cond-mat.mes-hall↗

arXiv2021

Spin liquid behavior of a three-dimensional magnetic system Ba$_3$NiIr$_2$O$_9$ with $S$ = 1

The quantum spin liquid (QSL) is an exotic phase of magnetic materials where the spins continue to fluctuate without any symmetry breaking down to zero temperature. Among the handful reports of QSL with spin $S\ge$1, examples with magnetic ions on a three-dimensional magnetic lattice are extremely rare since both larger spin and higher dimension tend to suppress quantum fluctuations. In this work, we offer a new strategy to achieve 3-D QSL with high spin by utilizing two types of transition metal ions, both are magnetically active but located at crystallographically inequivalent positions. We design a 3-D magnetic system Ba$_3$NiIr$_2$O$_9$ consisting of interconnected corner shared NiO$_6$ octahedra and face shared Ir$_2$O$_9$ dimer, both having triangular arrangements in \textit{a-b} plane. X-ray absorption spectroscopy measurements confirm the presence of Ni$^{2+}$ ($S$=1). Our detailed thermodynamic and magnetic measurements reveal that this compound is a realization of gapless QSL state down to at least 100 mK. Ab-initio calculations find a strong magnetic exchange between Ir and Ni sublattices and in-plane antiferromagnetic coupling between the dimers, resulting in dynamically fluctuating magnetic moments on both the Ir and Ni sublattice.

cond-mat.str-el↗

arXiv2020

Giant orbital polarization of Ni$^{2+}$ in square planar environment

Understanding the electronic behavior of Ni$^{2+}$ in a square planar environment of oxygen is the key to unravel the origin of the recently discovered superconductivity in the hole doped nickelate Nd$_{0.8}$Sr$_{0.2}$NiO$_2$. To identify the major similarities/dissimilarities between nickelate and cuprate superconductivity, the study of the electronic structure of Ni$^{2+}$ and Cu$^{2+}$ in an identical square planar environment is essential. In order to address these questions, we investigate the electronic structure of Sr$_2$CuO$_3$ and Ni doped Sr$_2$CuO$_3$ single crystals containing (Cu/Ni)O$_4$ square planar units. Our polarization dependent X-ray absorption spectroscopy experiments for Ni in Sr$_2$Cu$_{0.9}$Ni$_{0.1}$O$_3$ have revealed very large orbital polarization, which is a characteristic feature of high $T_c$ cuprate. This arises due to the low spin $S$=0 configuration with two holes in Ni 3$d_{x^2-y^2}$ orbitals - in contrast to the expected high spin $S$=1 state from Hund's first rule. The presence of such $S$=0 Ni$^{2+}$ in hole doped nickelate would be analogous to the Zhang Rice singlet. However, the Mott Hubbard insulating nature of the NiO$_4$ unit would point towards a different electronic phase space of nickelates, compared to high $T_c$ cuprates.

cond-mat.str-el↗

arXiv2020

Oxygen Vacancy-Induced Topological Hall effect in a Nonmagnetic Band Insulator

The discovery of skyrmions has sparked tremendous interests about topologically nontrivial spin textures in recent times. The signature of noncoplanar nature of magnetic moments can be observed as topological Hall effect (THE) in electrical measurement. Realization of such nontrivial spin textures in new materials and through new routes is an ongoing endeavour due to their huge potential for future ultra-dense low-power memory applications. In this work, we report oxygen vacancy (OV) induced THE and anomalous Hall effect (AHE) in a 5$d^0$ system KTaO$_3$. The observation of weak antilocalization behavior and THE in the same temperature range strongly implies the crucial role of spin-orbit coupling (SOC) behind the origin of THE. Ab initio calculations reveal the formation of the magnetic moment on Ta atoms around the OV and Rashba-type spin texturing of conduction electrons. In the presence of Rashba SOC, the local moments around vacancy can form bound magnetic polarons (BMP) with noncollinear spin texture, resulting THE. Scaling analysis between transverse and longitudinal resistance establishes skew scattering driven AHE in present case. Our study opens a route to realize topological phenomena through defect engineering.

cond-mat.mtrl-sci↗

arXiv2020

Oxygen vacancy induced electronic structure modification of KTaO$_3$

The observation of metallic interface between band insulators LaAlO$_3$ and SrTiO$_3$ has led to massive efforts to understand the origin of the phenomenon as well as to search for other systems hosting such two dimensional electron gases (2-DEG). However, the understanding of the origin of the 2-DEG is very often hindered as several possible mechanisms such as polar catastrophe, cationic intermixing and oxygen vacancy (OV) etc. can be operative simultaneously. The presence of a heavy element makes KTaO$_3$ (KTO) based 2-DEG a potential platform to investigate spin orbit coupling driven novel electronic and magnetic phenomena. In this work, we investigate the sole effect of the OV, which makes KTO metallic. Our detailed \textit{ab initio} calculations not only find partially filled conduction bands in the presence of an OV but also predict a highly localized mid-gap state due to the linear clustering of OVs around Ta. Photoluminescence measurements indeed reveal the existence of such mid-gap state and O $K$-edge X-ray absorption spectroscopy finds electron doping in Ta $t_{2g}^*$ antibonding states. This present work suggests that one should be cautious about the possible presence of OVs within KTO substrate in interpreting metallic behavior of KTO based 2-DEG.

cond-mat.mtrl-sci↗

arXiv2019

Epitaxial stabilization of ultra thin films of high entropy perovskite

High entropy oxides (HEOs) are a class of materials, containing equimolar portions of five or more transition metal and/or rare-earth elements. We report here about the layer-by-layer growth of HEO [(La$_{0.2}$Pr$_{0.2}$Nd$_{0.2}$Sm$_{0.2}$Eu$_{0.2}$)NiO$_3$] thin films on NdGaO$_3$ substrates by pulsed laser deposition. The combined characterizations with in-situ reflection high energy electron diffraction, atomic force microscopy, and X-ray diffraction affirm the single crystalline nature of the film with smooth surface morphology. The desired +3 oxidation of Ni has been confirmed by an element sensitive X-ray absorption spectroscopy measurement. Temperature dependent electrical transport measurements revealed a first order metal-insulator transition with the transition temperature very similar to the undoped NdNiO$_3$. Since both of these systems have a comparable tolerance factor, this work demonstrates that the electronic behaviors of $A$-site disordered perovskite-HEOs are primarily controlled by the average tolerance factor.

cond-mat.str-el↗