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Przemysław Przybysz

Publications and source records attributed to Przemysław Przybysz.

4 recordsLinked to original sources

Electronic Coupling and Charge-Transfer Landscape of Graphene on Ge(001)/Si(001): Multiscale Analysis Assisted by Machine Learning

Understanding and controlling charge transfer at graphene-semiconductor interfaces is essential for the integration of two-dimensional materials into silicon-compatible technologies. Here, we combine ultraviolet photoelectron spectroscopy (UPS), Kelvin probe force microscopy (KPFM), angle-resolved photoemission spectroscopy (ARPES), scanning tunneling spectroscopy (STS) and density functional theory (DFT) to resolve work-function modulation and electronic coupling in graphene grown on Ge(001)/Si(001). UPS and KPFM reveal a spatially non-uniform work-function landscape correlated with the nanofaceted morphology of the substrate. ARPES and DFT calculations for the pristine interface consistently indicate n-type doping and electron transfer from Ge to graphene. In contrast, modeling of the oxidized interface predicts a reversal to p-type doping, providing a plausible explanation for the different doping polarities reported in the literature. Machine-learning-assisted classification of the STS data resolves distinct local electronic regimes, ranging from nearly free-standing graphene on nanofacet tops to more strongly coupled inter-facet regions and nanoribbon-like regions with distinct local electronic responses. By identifying the mechanisms governing local graphene-substrate interactions and charge transfer, our study provides guidelines for tailoring the synthesis process and minimizing defect formation during delamination. These insights support the production of high-quality graphene layers for electronic devices and for transfer as protective coatings for air-sensitive materials.

cond-mat.mtrl-sci↗

Nano-ARPES investigation of twisted bilayer tungsten disulfide

The diverse and intriguing phenomena observed in twisted bilayer systems, such as graphene and transition metal dichalcogenides, prompted new questions about the emergent effects that they may host. However, the practical challenge of realizing these structures on a scale large enough for spectroscopic investigation, remains a significant hurdle, resulting in a scarcity of direct measurements of the electronic band structure of twisted transition metal dichalcogenide bilayers. Here we present a systematic nanoscale angle-resolved photoemission spectroscopy investigation of bulk, single layer, and twisted bilayer WS2 with a small twist angle of 4.4°. The experimental results are compared with theoretical calculations based on density functional theory along the high-symmetry directions Γ-K and Γ-M. Surprisingly, the electronic band structure measurements suggest a structural relaxation occurring at 4.4° twist angle, and formation of large, untwisted bilayer regions.

physics.chem-ph↗

Robust Zeeman-type band splitting in sliding ferroelectrics

Transition metal dichalcogenides exhibit giant spin-orbit coupling, and intriguing spin-valley effects, which can be harnessed through proximity in van der Waals (vdW) heterostructures. Remarkably, due to the prismatic crystal field, the Zeeman-type band splitting of valence bands reach values of several hundreds of meV. While this effect is suppressed in the commonly studied hexagonal (H)-stacked bilayers due to the presence of inversion symmetry, the recent discovery of sliding ferroelectricity in rhombohedral (R-)stacked MX$_2$ bilayers (M=Mo, W; X=S, Se) suggests that the Zeeman effect could be present in these non-centrosymmetric configurations, making it even more intriguing to investigate how the spin-resolved bands would evolve during the phase transition. Here, we perform density functional theory calculations complemented by symmetry analysis to unveil the evolution of ferroelectricity during sliding and the behavior of Zeeman splitting along the transition path. While the evolution of the out-of-plane component of the electric polarization vector resembles the conventional ferroelectric transition, we observe significant in-plane components parallel to the sliding direction, reaching their maximum at the intermediate state. Moreover, we demonstrate that the R-stacked bilayers exhibit persistent Zeeman-type band splitting throughout the transition path, allowed by the lack of inversion symmetry. Further analysis of different stacking configurations generated by sliding along various directions confirms that the Zeeman effect in MX$_2$, primarily arising from the polarity of prismatic ligand coordination of the metal atom, is remarkably robust and completely governs the spin polarization of bands, independently of the sliding direction. This resilience promises robust spin transport in vdW based MX$_2$ bilayers, opening new opportunities for ferroelectric spintronics.

cond-mat.mtrl-sci↗

Graphene on quartz modified with rhenium oxide as a semitransparent electrode for organic electronic

Our research shows that commercially available graphene on quartz modified with rhenium oxide meets the requirements for its use as a conductive and transparent anode in optoelectronic devices. The cluster growth of rhenium oxide enables an increase in the work function of graphene by 1.3 eV up to 5.2 eV, which guarantees an appropriate adjustment to the energy levels of the organic semiconductors used in OLED devices.

physics.app-ph↗