arXiv subjects

Purbita Purkayastha

Publications and source records attributed to Purbita Purkayastha.

6 recordsLinked to original sources

arXiv2026

Surface passivation for narrowing optical linewidth of silicon T centers in nanophotonic devices

Silicon T centers are promising spin-photon interfaces in solid-state platforms for telecom-compatible, scalable quantum information technologies. A major challenge for T centers in nanophotonics is spectral diffusion, where fluctuations in the local electric-field environment from surface and bulk charge states broaden the optical transition and reduce photon indistinguishability. Strategies that directly suppress spectral diffusion are therefore critical for improving T-center-based quantum photonic devices. Here, we use atomic-layer-deposited Al2O3 to passivate the silicon surface and demonstrate a systematic narrowing of T center optical linewidths. Across our measurements, Al2O3 passivation reduces the T center emission linewidth by up to 57%. Complementary above-bandgap illumination and spectral hole burning measurements show that the remaining linewidth contains a significant spectral-diffusion component caused by adjacent charge traps, while placing an upper bound of approximately 75 MHz on the homogeneous linewidth. This work provides a CMOS-compatible path toward generating indistinguishable photons from silicon T centers for scalable quantum photonic applications.

quant-ph↗

arXiv2026

Bright Telecom Spin-Photon Interface in Silicon Photonics

Silicon is an attractive host for scalable quantum photonics, but the absence of bright telecom-band emitters with optically addressable spin states has limited its use for spin-photon interfaces. Here we demonstrate the Al1-center, an aluminum--carbon defect in silicon, as a bright waveguide-integrated single-photon emitter with a ground-state spin. Using isotopically purified silicon-on-insulator nanophotonic devices, we isolate individual Al1-centers and observe high-purity single-photon emission with $g^{(2)}(0)=0.04$ without background subtraction. Time-resolved photoluminescence spectroscopy reveals a fast excited-state lifetime of 135 ns, nearly an order of magnitude shorter than the benchmark provided by the well-studied T-center. Resonant photoluminescence excitation measurements further resolve the zero-phonon transition and reveal a narrow homogeneous linewidth reaching 47 MHz, threefold narrower than the T-center under comparable temperature. Through magneto-optical spectroscopy, we resolve the spin-dependent transitions of the bound-exciton manifold and achieve spin-selective optical pumping, fulfilling the prerequisite for quantum state initialization and readout. These results establish the Al1-center as a bright telecom-band spin-photon interface in silicon photonics and introduce a promising platform for integrated quantum networks.

quant-ph↗

arXiv2025

Cavity Enhanced Emission from Telecom Rare-Earth System in Colloidal Host

Erbium incorporated in a ceria (CeO2) host offers strong potential as a spin qubit platform, providing a pathway toward telecom-compatible quantum memory. But erbium is a dim emitter due to its long excited state lifetime. Methods to enhance its emission rate and efficiency through nanophotonic cavity integration are therefore essential. In this work, we demonstrate cavity-enhanced emission from erbium doped CeO2. We couple colloidally synthesized erbium doped CeO2 nanocrystals to a silicon nanobeam cavity and show a 30-fold improvement in emitter brightness combined with a 2-fold lifetime enhancement. We estimate a lower bound of 12 for the Purcell factor of cavity-coupled emitters after accounting for non-radiative decay. These results pave the way towards utilizing colloidally synthesized optically addressable spin qubits emitting at telecom wavelength for quantum networking and distributed quantum computing.

physics.optics↗

arXiv2025

Inverse-Designed Photonic Crystal Cavities with Controllable Far-Field Numerical Aperture

Photonic crystal cavities confine light to subwavelength volumes, enabling strong light-matter interactions for applications in low-power photonics, opto-electronics, nonlinear optics, and quantum information. These applications demand cavities that combine high quality factors, low mode volumes, and high coupling efficiencies. However, optimizing across these metrics requires exploring a large design space, motivating the use of inverse design strategies. Previous inverse design efforts targeted high quality factors and low mode volumes, sacrificing the coupling efficiency or lacking the ability to precisely control the far-field radiation pattern. In this work, we present an inverse design framework that simultaneously optimizes cavity quality factor and far-field numerical aperture, both specified as design targets. Using this method, we design L3 photonic crystal cavities, with different far-field numerical apertures, in the visible wavelength and fabricate them in silicon nitride. Photoluminescence measurements confirm experimental control of the far-field numerical aperture and reveal a 28-fold and 3.9-fold improvement in the coupling efficiency and quality factor respectively when compared to the standard L3 cavity. Disorder analysis further shows that the designs retain significant performance despite nanofabrication imperfections. Our work demonstrates a versatile inverse design framework for multi-objective optimization of photonic crystal cavities to attain high quality factors and coupling efficiency.

physics.optics↗

arXiv2024

Bright and Purcell-enhanced single photon emission from a silicon G center

Silicon G centers show significant promise as single photon sources in a scalable silicon platform. But these color centers have large non-radiative decay and a low Debye-Waller factor, limiting their usability in quantum applications. In this work, we demonstrate bright Purcell-enhanced emission from a silicon G center by coupling it to a nanophotonic cavity. The nanobeam cavity enhances the spontaneous emission rate of a single G center by a factor of 6, corresponding to a Purcell factor greater than 31 when accounting for decay into the phonon sideband. We obtain a spontaneous emission rate of 0.97 ns, which is the fastest single photon emission rate reported in silicon. With this radiative enhancement, we achieve an order of magnitude improvement in emitter brightness compared to previously reported values. These results pave the way for scalable quantum light sources on a silicon photonic chip.

physics.optics↗

arXiv2023

Purcell enhanced emission and saturable absorption of cavity-coupled CsPbBr$_3$ quantum dots

Halide perovskite semiconductors have emerged as promising materials for the development of solution-processed, scalable, high performance optoelectronic devices such as light-emitting diodes (LEDs) as well as coherent single photon emitters. Their integration to nanophotonic cavities for radiative enhancement and strong nonlinearity is underexplored. In this work, we demonstrate cavity-enhanced emission and saturable absorption using colloidal CsPbBr$_3$ perovskite quantum dots coupled to a high-Q cavity mode of a circular Bragg grating structure designed to facilitate integration of solution-processed materials . We achieve an order of magnitude increase in brightness and 8-fold increase in the spontaneous emission rate for the cavity-coupled emitters. This result indicates the possibility of achieving transform-limited photon coherence for the halide perovskites at cryogenic temperatures. We also observe saturable absorption of the emitters through intensity-dependent cavity quality factor. These results pave the way towards achieving improved photon indistinguishability and strong optical nonlinearities for cavity coupled perovskite systems.

physics.optics↗