arXiv subjects

Purna P. Paudel

Publications and source records attributed to Purna P. Paudel.

4 recordsLinked to original sources

arXiv2026

A First-Principles Multiscale Framework for Topological Superconductivity

A microscopic understanding of topological superconductivity (TSC) in real materials requires a materials-informed approach that integrates first-principles electronic structure, superconductivity, and topology within a unified computational framework. Here, we develop such an approach by combining density functional theory, Wannier-based low-energy Hamiltonians, Bogoliubov-de Gennes theory, and Matsubara Green's-function-based Chern number calculations performed directly on realistic multiorbital superconducting Hamiltonians. We apply this framework to bulk-like and monolayer FeTeSe and to FeSe/GaAs heterostructures, enabling a unified investigation of both intrinsic and proximity-induced topological superconductivity. We identify key electronic-structure ingredients that promote robust TSC, including Rashba-active states near the Fermi level, strong induced superconducting pairing, and substantial orbital hybridization between spin-orbit-active and superconducting sectors. Guided by these design principles, we predict multiple topological superconducting phases in Fe-based materials and demonstrate that FeSe/GaAs heterostructures are particularly promising, exhibiting topological transitions at experimentally accessible chemical potentials and low Zeeman fields. Complementing the theoretical predictions, we demonstrate the growth and structural characterization of FeSe/GaAs heterostructures, establishing the experimental feasibility of the proposed materials platform. Our results provide a quantitative route for engineering and screening candidate Majorana materials and heterostructures directly from realistic electronic structures and establish a foundation for future materials-by-design approaches to topological superconductivity.

cond-mat.supr-con↗

arXiv2026

Planar Josephson junction devices with narrow superconducting strips: Topological properties and optimization

We study the low-energy physics of planar Josephson junction structures realized in a quasi-two dimensional semiconductor system proximity-coupled to narrow superconducting films. Using both a recursive Green's function approach and an effective Hamiltonian approximation, we investigate the topological superconducting phase predicted to emerge in this type of system. We first characterize the effects associated with varying the electrostatic potentials applied within the unproximitized semiconductor regions. We then address the problem of optimizing the width of the superconductor films and identifying the optimal regimes characterized by large topological gap values. We find that structures with narrow superconducting films of widths ranging between about $100~$nm and $200~$nm can support topological superconducting phases with gaps up to $40\%$ of the parent superconducting gap, significantly larger than those characterizing the corresponding wide-superconductor structures. This work represents the first component of a proposed comprehensive strategy to address this optimization problem in planar Josephson junction structures and realize robust topological devices.

cond-mat.supr-con↗

arXiv2025

Disorder effects in planar semiconductor-superconductor structures: Majorana wires versus Josephson junctions

Disorder effects in hybrid semiconductor-superconductor (SM-SC) nanowires, widely recognized as the main obstacle to realizing stable Majorana zero modes (MZMs) in these structures, have been systematically investigated theoretically in recent years. However, there are no corresponding detailed studies of disorder effects in planar Josephson junction (JJ) structures, which represent a promising alternative to the Majorana nanowire platform. In this paper, we perform a numerical analysis of the low-energy physics of JJ structures based on an effective microscopic model that includes two types of disorder, charge impurities inside the semiconductor and roughness on the surface of the superconducting film. We consider different parameter regimes, including low and high chemical potential values, weak and strong effective SM-SC coupling strengths, and weak and strong disorder strengths. The results are benchmarked using disordered hybrid nanowires realized in planar SM-SC structures similar to those involved in the fabrication of Josephson junctions and having similar model parameters and disorder strengths. We find that the topological superconducting phase hosted by a JJ structure is, generally, more robust against disorder than the topological superconductivity realized in a hybrid nanowire with similar parameters. On the other hand, we find that operating the JJ in a regime characterized by large values of chemical potential results in huge finite-size effects that can destroy the stability of MZMs.

cond-mat.supr-con↗

arXiv2021

Enhanced topological superconductivity in spatially modulated planar Josephson junctions

We propose a semiconductor-superconductor hybrid device for realizing topological superconductivity and Majorana zero modes consisting of a planar Josephson junction structure with periodically modulated junction width. By performing a numerical analysis of the effective model describing the low-energy physics of the hybrid structure, we demonstrate that the modulation of the junction width results in a substantial enhancement of the topological gap and, consequently, of the robustness of the topological superconducting phase and associated Majorana zero modes. This enhancement is due to the formation of minibands with strongly renormalized effective parameters, including stronger spin-orbit coupling, generated by the effective periodic potential induced by the modulated structure. In addition to a larger topological gap, the proposed device supports a topological superconducting phase that covers a significant fraction of the parameter space, including the low Zeeman field regime, in the absence of a superconducting phase difference across the junction. Furthermore, the optimal regime for operating the device can be conveniently accessed by tuning the potential in the junction region using, for example, a top gate.

cond-mat.mes-hall↗