arXiv subjects

Pushpak Banerjee

Publications and source records attributed to Pushpak Banerjee.

4 recordsLinked to original sources

arXiv2026

Non-volatile superconducting tunnelling magnetoresistance memory enabled by exchange-field gap engineering

Scalable, low-dissipation memory operating below 4 K is a critical requirement for superconducting and quantum computing systems. Existing cryogenic memory technologies rely on CMOS derivatives or hybrid architectures that incur leakage, refresh overhead or limited compatibility with superconducting logic. Here we demonstrate a superconducting tunnelling magnetoresistance device that functions as a non-volatile cryogenic memory element across the full superconducting temperature range. By integrating a de Gennes spin valve with a superconducting tunnel junction in a current perpendicular-to-plane geometry, we realise exchange-field control of the superconducting energy gap. This produces two magnetically switchable gap voltages and robust quasiparticle tunnelling magnetoresistance down to 0.25 K.The device operates at millivolt bias with nanowatt-level read power and zero standby dissipation. Its vertical junction architecture and Nb-based materials platform enable compatibility with superconducting logic and scalable cryogenic memory arrays.

cond-mat.supr-con↗

arXiv2023

Universal route towards field-free electrically polarity-reversible Josephson diode

The realisation of superconducting diodes that operate without external magnetic fields and allow electrical control of polarity is a key goal for the integration of nonreciprocal elements into cryogenic and quantum technologies. Here, we demonstrate a universal and scalable approach to achieving such field-free and electrically reconfigurable Josephson diode functionality. Our method relies on long Josephson junctions with ferromagnetic barriers and asymmetric current injection - a configuration that inherently breaks both time-reversal and inversion symmetries. We show that the diode polarity is set by an applied bias current and can be reversed using short current pulses, without the need for magnetic fields or thermal cycling. The effect is robust, material-agnostic, and compatible with standard established fabrication processes. Our results provide a practical platform for integrating low-dissipation, programmable diodes into superconducting and quantum electronic circuits

cond-mat.supr-con↗

arXiv2023

Superconductivity controlled bulk magnetism

Ferromagnetism's ability to influence superconducting order is well known and well established, but the converse phenomena remains relatively less explored. Theoretical work on the subject includes Anderson and Suhl prediction of a crypto-ferromagnetic state, and De Gennes proposal of two ferromagnetic insulators exchange coupled through a superconductor. In this study, we present compelling evidence of coexistence of both phenomena in a superconducting spin valve system. We demonstrate that superconducting exchange coupling enables reliable bistable states, and the coexistence of SEC and CFM leads to a wide range of reproducible zero field micro-magnetic states in the SSV, which are a function of the strength of the superconducting state. These micromagnetic states can in turn influence the superconducting state, leading to multiple reproducible and non-volatile resistance states; thus paving the way for a novel direction in cryogenic in-memory computing.

cond-mat.supr-con↗

arXiv2023

Large tuneable exchange fields due to purely paramagnetically limited domain wall superconductivity

The ability to locally apply and tune large magnetic fields is a crucial requirement for several devices, most notably for detection and generation of majorana fermions. Such a functionality can be achieved in Superconductor (S) /Ferromagnet (F) bilayers, where superconductivity is strengthened on top of domain walls due to local lowering of the proximity induced effective exchange fields. This is predicted to result in significant superconducting Tc enhancements and possible complete magnetic controlled switching on and off of the superconducting state. By using thin films of superconducting Nb and ferromagnetic insulating (GdN) bilayers, and through detailed magneto-transport measurements, we demonstrate the previously unobserved phenomena of complete switching in and out of the S state in S/F bilayers. In the thinnest of Nb layers, we estimate that the domain wall state induced tunability of proximity induced exchange fields can be as high as 1.3T with application of in plane external fields of only a few mT.

cond-mat.supr-con↗