arXiv subjects

Pushpanshu Tripathi

Publications and source records attributed to Pushpanshu Tripathi.

2 recordsLinked to original sources

arXiv2025

Beta-Ga2O3 Sub-Micron FinFETs with Si Delta-Doped Channel Modulating Charge Density Above 3x10^13 cm^-2

This letter reports on the design and demonstration of high-performance Beta-Ga2O3 FinFETs utilizing MOCVD-grown Si delta-doped channels to achieve enhanced carrier transport and electrostatic control. A record high sheet charge density of 3.3x10^13 cm^-2 was modulated using 100 nm fin channels, delivering a peak drain current of 410 mA/mm and a peak transconductance of 60 mS/mm. The FinFET architecture enables strong gate modulation, achieving a high Ion/Ioff ratio between 10^8 and 10^9. A low contact resistance of 0.42 ohm.mm was achieved to the Si delta-doped channel using MOCVD contact regrowth. Small-signal RF characterization revealed a current-gain cutoff frequency (fT) of 3.8 GHz and a maximum oscillation frequency (fMAX) of 2.1 GHz for a 0.8-micrometer gate length. These results demonstrate the efficacy of combining precision delta-doping with a 3D FinFET geometry for high-frequency Beta-Ga2O3 electronics, establishing a platform for future RF and high-power applications

physics.app-ph↗

arXiv2024

In situ etching of \b{eta}-Ga2O3 using tert-butyl chloride in an MOCVD system

In this study, we investigate in situ etching of \b{eta}-Ga2O3 in a metal-organic chemical vapor deposition (MOCVD) system using tert-Butyl chloride (TBCl). We report the successful etching of both heteroepitaxial (-201)-oriented and homoepitaxial (010)-oriented \b{eta}-Ga2O3 films over a wide range of substrate temperature, TBCl molar flows, and reactor pressures. We identify that the likely etchant is HCl (g) formed by the pyrolysis of TBCl in the hydrodynamic boundary layer above the substrate. The temperature dependence of the etch rate reveals two distinct regimes characterized by markedly different apparent activation energies. The extracted apparent activation energies suggest that at temperatures below ~800 °C the etch rate is likely limited by desorption of etch products. The relative etch rates of heteroepitaxial (-201) and homoepitaxial (010) \b{eta}-Ga2O3 were observed to scale by the ratio of the surface energies indicating an anisotropic etch. For (010) homoepitaxial films, relatively smooth post-etch surface morphology was achieved by tuning the etching parameters.

cond-mat.mtrl-sci↗