arXiv subjects

Q. Wan

Publications and source records attributed to Q. Wan.

6 recordsLinked to original sources

arXiv2021

Inherited Weak Topological Insulator Signatures in Topological Hourglass Semimetal Nb3XTe6 (X = Si, Ge)

Using spin-resolved and angle-resolved photoemission spectroscopy and first-principles calculations, we have identified bulk band inversion and spin polarized surface state evolved from a weak topological insulator (TI) phase in van der Waals materials Nb3XTe6 (X = Si, Ge). The fingerprints of weak TI homologically emerge with hourglass fermions, as multi nodal chains composed by the same pair of valence and conduction bands gapped by spin orbit coupling. The novel topological state, with a pair of valence and conduction bands encoding both weak TI and hourglass semimetal nature, is essential and guaranteed by nonsymmorphic symmetry. It is distinct from TIs studied previously based on band inversions without symmetry protections.

cond-mat.mtrl-sci↗

arXiv2021

Observation of multi Dirac fermion cloning induced by moir\'e potential in graphene-SiC heterostructure

We reexamine the electronic structure of graphene on SiC substrate by angle-resolved photoemission spectroscopy. We directly observed multiply cloning of Dirac cone, in addition to ones previously attributed to reconstruction. The locations, relative distances and anisotropy of Dirac cone replicas fully agree with the moir\'e pattern of graphene-SiC heterostructure. Our results provide a straightforward example of moir\'e potential modulation in engineering electronic structure with Dirac fermions.

cond-mat.mtrl-sci↗

arXiv2020

Charged bosons made of fermions in a solid state system without Cooper pairing

We report experimental evidence for charged boson states in a solid without Cooper pairing, based on attaching two free carriers to an exciton in a semiconducting system. Theoretical calculations show that this type of complex is stable in bilayer systems next to a parallel metal layer. Our experimental measurements on structures made using two different materials show a new spectral line at the predicted energy, if and only if all the required conditions for this complex are fulfilled, including a parallel metal layer that significantly screens the repulsive interaction between the like-charge carriers, and with the predicted dependence on the distance to the metal layer. This suggests a new path for pursuing room temperature superconductivity without Cooper pairing.

cond-mat.supr-con↗

arXiv2019

Directional massless Dirac fermions in a layered van der Waals material with one-dimensional long-range order

Exotic properties in single or few layers of van der Waals materials carry great promise for applications in nanoscaled electronics, optoelectronics and flexible devices. The established, distinct examples include extremely high mobility and superior thermal conductivity in graphene, a large direct band gap in monolayer MoS2 and quantum spin Hall effect in WTe2 monolayer, etc. All these exotic properties arise from the electron quantum confinement effect in the two-dimensional limit. Here we report a novel phenomenon due to one-dimensional (1D) confinement of carriers in a layered van der Waals material NbSi0.45Te2 revealed by angle-resolved photoemission spectroscopy, i.e. directional massless Dirac fermions. The 1D behavior of the carriers is directly related to a stripe-like structural modulation with the long-range translational symmetry only along the stripe direction, as perceived by scanning tunneling microscopy experiment. The four-fold degenerated node of 1D Dirac dispersion is essential and independent on band inversion, because of the protection by nonsymmorphic symmetry of the stripe structure. Our study not only provides a playground for investigating the striking properties of the essential directional massless Dirac fermions, but also introduces a unique monomer with 1D long-range order for engineering nano-electronic devices based on heterostructures of layered van der Waals materials.

cond-mat.mtrl-sci↗

arXiv2019

Evidence of orbit-selective electronic kagome lattice with planar flat-band in correlated paramagnetic YCr6Ge6

Electronic properties of kagome lattice have drawn great attention recently. In associate with flat-band induced by destructive interference and Dirac cone-type dispersion, abundant exotic phenomena have been theoretically discussed. The material realization of electronic kagome lattice is a crucial step towards comprehending kagome physics and achieving novel quantum phases. Here, combining angle-resolved photoemission spectroscopy, transport measurements and first-principle calculations, we expose a planar flat-band in paramagnetic YCr6Ge6 as a typical signature of electronic kagome lattice. We unearth that the planar flat-band arises from the d_(z^2 ) electrons with intra-kagome-plane hopping forbidden by destructive interference. On the other hand, the destructive interference and flatness of the d_(x^2-y^2 ) and d_xy bands are decomposed possibly due to additional in-plane hopping terms, but the Dirac cone-type dispersion is reserved near chemical potential. We explicitly unveil that orbital character plays an essential role to realize electronic kagome lattice in bulk materials with transition metal kagome layers. Paramagnetic YCr6Ge6 provides an opportunity to comprehend intrinsic properties of electronic kagome lattice as well as its interplays with spin orbit coupling and electronic correlation of Cr-3d electrons, and be free from complications induced by strong local moment of ions in kagome planes.

cond-mat.mtrl-sci↗

arXiv2007

Bidding Strategy with Forecast Technology Based on Support Vector Machine in Electrcity Market

The participants of the electricity market concern very much the market price evolution. Various technologies have been developed for price forecast. SVM (Support Vector Machine) has shown its good performance in market price forecast. Two approaches for forming the market bidding strategies based on SVM are proposed. One is based on the price forecast accuracy, with which the being rejected risk is defined. The other takes into account the impact of the producer's own bid. The risks associated with the bidding are controlled by the parameters setting. The proposed approaches have been tested on a numerical example.

q-fin.GN↗