arXiv subjects

Qianbiao Liu

Publications and source records attributed to Qianbiao Liu.

14 recordsLinked to original sources

arXiv2026

Initialization-free ultralow-power programmable spin-orbit torque logic devices enabled by chirally asymmetric switching

Spin logic is of great interest for the development of high-performance, non-Von Neumann artificial intelligence chips. Of particular advantage is the programmable spin-orbit torque logic that can achieve the complete set of the 16 Boolean logic operations within a single device in an initialization-free, low-power, and scalable manner, which is, however, a challenge despite remarkable efforts over more than two decades. Here, utilizing chirally asymmetric switching, we demonstrate an initialization-free, low-power, programmable spin-orbit torque logic device that is capable of the complete set of 16 Boolean logic operations within a single device with only three inputs and ultralow power of < 1 fJ/bit. We also propose the first initialization-free, all-electrical spin-based cascading computing devices, including a half adder, a three-level full adder, a two-level full adder, and a Transfer/NOT selector. These compact and scalable computing devices are enabled by the chirally asymmetric spin-orbit torque switching of a Ta/FeCoB bilayer with a significant perpendicular Dzyaloshinskii-Moriya interaction field. These results pave an intriguing way for the development of next-generation high-performance large-scale in-memory computing chips based on chirally asymmetric spin-orbit torque switching.

cond-mat.mtrl-sci↗

arXiv2026

Demonstration of room-temperature, magnetic-field-free, and ultralow-power spin-orbit torque logic device based on composition-uniform van der Waals magnet Fe3GaTe2

Van der Waals magnets have received blooming interest in material science and spintronics for the advantages of low magnetization, flexible stacking, strong tunability, and dangling-bond-free interfaces. However, there has been no report of room-temperature magnetic-field-free spin logic device based on a van der Waals magnet. Here, we demonstrate a room-temperature, field-free, low-power, scalable spin-orbit torque in-memory computing logic device utilizing a van der Waals magnet Fe3GaTe2 bit with strong perpendicular magnetic anisotropy and a Pt channel with strong spin Hall effect, high electrical conductivity, and electric asymmetries. Current pulse width-dependent switching measurement reveals a low intrinsic critical magnetic-field-free switching current of 1.8e7 A cm-2, a high thermal stability factor of 50, and the potential of an ultralow write power of 1.5 fJ per bit at 1 ns pulse width for a typical industrial-level device dimensions (40 times lower than the industrially optimized W/FeCoB device). These results suggest a great potential of van der Waals magnets in dense, ultralow-power, scalable in-memory computing technologies.

cond-mat.mtrl-sci↗

arXiv2026

Dominant spin Hall torque and negligible orbital Hall torque in α-W/ferromagnet heterostructures with artifacts-free angular momentum detectors

α-phased W was theoretically predicted to have a negative spin Hall conductivity and a positive orbital Hall conductivity at the same time, leaving the physical origin of the current-induced torque a critical open question. Here, we develop two angular momentum detectors of Cu/Ni/Cu and Cu/Fe60Co20B20/Cu that are free of artifacts torques (e.g., self-induced torque and spin-vorticity torque) and clarify that the spin-orbit torque contributed by α-W remains negative and predominantly from the spin Hall effect in the entire thickness regime. The damping-like torque exhibits a monotonic decay as the W thickness increases above 5 nm likely due to the thickness-dependent structural evolution and resistivity reduction of the W layer. The negative torque in the entire thickness regime suggests negligible orbital Hall torque from α-W. This result is consistent with the theory that the orbital Hall effect from simplified band structure calculations is not a non-local angular momentum source.

cond-mat.mes-hall↗

arXiv2026

Universal scaling of the Anomalous Hall voltage of magnetic layer with the adjacent conducting layer

The anomalous Hall voltage of magnetic heterostructures plays a key role as the indicator for the magnetization state and its interplay with a variety of spintronic effects. In this letter, we report the observation, mechanism, and impact of the universal, dramatic scaling of the anomalous Hall voltage of magnetic heterostructures with the thickness and resistivity of the nonmagnetic conducting layers (e.g., normal metal) by combining transport experiments, analytical derivation, and finite-element analyses. We identify that the mechanism is the serial resistor effect of the magnetic and non-magnetic layers within the magnetic heterostructures and irrelevant to any Fermi surface variation or angular momentum injection from the nonmagnetic layer to the magnetic layer. We also show that the accuracy of the harmonic Hall voltage analyses of magnetic heterostructures are unaffected by the under-measuring of the anomalous Hall voltage and other transverse voltages due to the serial resistor effect. These findings provide crucial information for understanding a variety of spintronic phenomena involving the anomalous Hall and other transverse voltages.

cond-mat.mes-hall↗

arXiv2025

Absence of orbital current torque in Ta/ferromagnet bilayers

It has become a heated debate as to whether the orbital Hall effect of a material could generate a non-local orbital current and a non-zero spin-orbit torque on an adjacent magnetic layer. Here, we report unambiguous evidence that, regardless of the ferromagnets (FMs) (e.g., Ni, Ni81Fe19, Fe, Fe60Co20B20, and FePt), the spin-orbit torque generated by an adjacent Ta, which is predicted to have a 50 times greater positive orbital Hall conductivity than the negative spin Hall conductivity, has essentially the same, negative efficiency, in agreement with the spin Hall effect of Ta being the only source of the interfacial torque. We identify that the constant, positive estimate of the torque of the Ta/FM samples from spin-torque ferromagnetic resonance (ST-FMR) analysis in a specific FM thickness range (>2 nm for Ni), that was heavily cited in the literature to signify an orbital current torque but strongly disagrees with the fairly long relaxation length in other orbital current torque claims, results from the overlook of a significant thick-dependent self-induced ST-FMR signal of the FM. These results indicate the absence of orbital current torque in Ta/ferromagnet systems, regardless of the type and the layer thickness of the ferromagnets.

cond-mat.mtrl-sci↗

arXiv2025

Enhancing z spin generation in trivial spin Hall materials for scalable, energy-efficient, field-free, complete spin-orbit torque switching applications

Despite the remarkable efforts in the past two decades, it has remained a major challenge to achieve switching of perpendicularly magnetized spin-orbit torque devices in a scalable, energy-efficient, field-free, integration-friendly, and complete manner. Here, we report giant enhancement of z spin generation in low-resistivity spin Hall metal/FeCoB devices by alloying the spin Hall metal Pt with Ti and by electric asymmetry engineering. The dampinglike spin torques of z spins and y spins are enhanced by 6 and 3 times relative to that of conventional Pt/FeCoB and enable complete, record-low-power, deterministic switching of FeCoB devices with strong perpendicular magnetic anisotropy and high coercivity. The Pt75Ti25/FeCoB heterostructure also exhibits relatively low resistivity, wafer-scale uniform sputter-deposition on silicon oxide, good compatibility with magnetic tunnel junctions, and excellent thermal stability of exceeding 400 C. These results unambiguously establish the Pt75Ti25/FeCoB as the most compelling candidate for solving the bottleneck of scalable, energy-efficient, field-free, integration-friendly, and complete spin-orbit torque switching technologies. This work also provides a universal strategy for developing high-performance generators of z spin current and will stimulate the exploration of exotic spin currents by alloying trivial spin Hall materials.

cond-mat.mtrl-sci↗

arXiv2024

Physics Origin of Universal Unusual Magnetoresistance

The discovery of the unusual magnetoresistance (UMR) during the rotation of magnetization in the plane perpendicular to the electric current, which has been typically attributed to magnetization-dependent interfacial reflection of spin current, has brought remarkable impacts on the understanding and application of a variety of spintronic phenomena. Here, we report that giant UMR occurs also in single-layer magnetic metals and exhibits high-order contributions and a universal sum rule, which agree well with the physics origin of the recently proposed two-vector magnetoresistance that simply considers electron scattering by the magnetization vector and interfacial electric field, without the need for any relevance to spin current. Revisiting of the literature data reveals that the most representative data that were used to claim spin Hall magnetoresistance or other magnetoresistances related or unrelated to spin current can be understood unifiedly by the two-vector MR theory. Experimental and theoretical results against spin-current-related magnetoresistances, but not the two-vector magnetoresistance, are discussed.

cond-mat.mes-hall↗

arXiv2024

Efficient generation of out-of-plane polarized spin current in polycrystalline heavy metal devices with broken electric symmetries

Spin currents of perpendicularly polarized spins (z spins) by an in-plane charge current have received blooming interest for the potential in energy-efficient spin-orbit torque switching of perpendicular magnetization in the absence of a magnetic field. However, generation of z spins is limited mainly to magnetically or crystallographically low-symmetry single crystals (such as non-colinear antiferromagnets) that are hardly compatible with the integration to semiconductor circuits. Here, we report efficient generation of z spins in sputter-deposited polycrystalline heavy metal devices via a new mechanism of broken electric symmetries in both the transverse and perpendicular directions. Both the dampinglike and fieldlike spin-orbit torques of z spins can be tuned significantly by varying the degree of the electric asymmetries via the length, width, and thickness of devices as well as by varying the type of the heavy metals. We also show that the presence of z spins enables deterministic, nearly-full, external-magnetic-field-free switching of a uniform perpendicularly magnetized FeCoB layer, the core structure of magnetic tunnel junctions, with high coercivity at a low current density. These results establish the first universal, energy-efficient, integration-friendly approach to generate z-spin current by electric asymmetry design for dense and low-power spin-torque memory and computing technologies and will stimulate investigation of z-spin currents in various polycrystalline materials.

cond-mat.mtrl-sci↗

arXiv2024

Strongly asymmetric magnetization switching and programmable complete Boolean logic enabled by long-range intralayer Dzyaloshinskii-Moriya interaction

Electrical switching of magnetization is central to spintronics. Despite the enormous efforts on the spin torques and the Dzyaloshinskii-Moriya interaction (DMI) effects, some fundamental physics for electrical switching of magnetization is still missing as indicated by a number of remarkable long-standing puzzles. Here, we report the discovery of the long-range intralayer DMI effect widely existing in magnetic heterostructure, which is distinct from the yet-known DMI effects as it describes the chiral coupling of two orthogonal magnetic domains within the same magnetic layer via the mediation of an adjacent heavy metal layer. The long-range intralayer DMI generates a strong perpendicular effective magnetic field (H_DMI^z) on the perpendicular magnetization. Characteristically, H_DMI^z varies with the sign/magnitude of the interfacial DMI constant, the applied in-plane magnetic fields, and the distribution of the perpendicular magnetic anisotropy. The long-range intralayer DMI results in striking consequences including the strongly asymmetric current/field switching of perpendicular magnetization, hysteresis loop shift of perpendicular magnetization in the absence of in-plane direct current, and sharp, complete switching of perpendicular magnetization purely by an in-plane magnetic field. Utilizing the long-range intralayer DMI effect, we demonstrate programable, complete Boolean logic operations (i.e., AND, NAND, NOT, OR, and NOR) within a single spin-orbit torque device. These results will stimulate the investigation of the long-range intralayer DMI effect and its impacts on a variety of spintronic devices.

cond-mat.mtrl-sci↗

arXiv2023

Giant coercivity, resistivity upturn, and anomalous Hall effect in ferrimagnetic FeTb

Despite the blooming interest, the transition-metal rare-earth ferrimagnets have not been comprehensively understood in terms of their coercivity and transport properties. Here, we report a systematic study of the magnetic and transport properties of ferrimagnetic FeTb alloy by varying the layer thickness and temperature. The FeTb is tuned from the Tb-dominated regime to the Fe-dominated regime via the layer thickness, without varying the composition. The coercivity closely follows the $1/\cosθ_H$ scaling (where $θ_H$ is the polar angle of the external magnetic field) and increases quasi-exponentially upon cooling (exceeding 90 kOe at low temperatures), revealing that the nature of the coercivity is the thermally-assisted domain wall depinning field. The resistivity exhibits a quasi-linear upturn upon cooling possibly due to thermal vibrations of the structure factor of the amorphous alloy. The existing scaling laws of the anomalous Hall effect in the literature break down for the amorphous FeTb that are either Fe- or Tb-dominated. These findings should advance the understanding of the transition-metal-rare-earth ferrimagnets and the associated ferrimagnetic phenomena in spintronics.

cond-mat.mtrl-sci↗

arXiv2022

Strong Spin-Orbit Torque Induced by the Intrinsic Spin Hall Effect in Cr1-xPtx

We report on a spin-orbit torque study of the spin current generation in Cr1-xPtx alloy, using the light 3d ferromagnetic Co as the spin current detector. We find that the dampinglike spin-orbit torque of Cr1-xPtx/Co bilayers can be enhanced by tuning the Cr concentration in the Cr1-xPtx layer, with a maximal value of 0.31 at the optimal composition of Cr0.2Pt0.8. We find that the spin current generation in the Cr1-xPtx alloy can be fully understood by the characteristic trade-off between the intrinsic spin Hall conductivity of Pt and the carrier lifetime in the dirty limit. We find no evidence for the spin current generation by other mechanisms in this material, revealing that the role of Cr is found to be simply the same as other metals and oxides in previous studies. This work also establishes the low-resistivity Cr0.2Pt0.8 as an energy-efficient spin-orbit torque provider for magnetic memory and computing technologies.

cond-mat.mtrl-sci↗

arXiv2022

Current-induced perpendicular effective magnetic field in magnetic heterostructures

Generation of perpendicular effective magnetic field or perpendicular spins (σz) is central for the development of energy-efficient, scalable, and external-magnetic-field-free spintronic memory and computing technologies. Here, we report the first identification and the profound impacts of a significant effective perpendicular magnetic field that can arise from asymmetric current spreading within magnetic microstrips and Hall bars. This effective perpendicular magnetic field can exhibit all the three characteristics that have been widely assumed in the literature to "signify" the presence of a flow of σz, i.e., external-magnetic-field-free current switching of uniform perpendicular magnetization, a sin2ϕ-dependent contribution in spin-torque ferromagnetic resonance signal of in-plane magnetization (ϕ is the angle of the external magnetic field with respect to the current, and a ϕ-independent but field-dependent contribution in the second harmonic Hall voltage of in-plane magnetization. This finding suggests that it is critical to include current spreading effects in the analyses of various spin polarizations and spin-orbit torques in magnetic heterostructure. Technologically, our results provide perpendicular effective magnetic field induced by asymmetric current spreading as a novel, universally accessible mechanism for efficient, scalable, and external-magnetic-field-free magnetization switching in memory and computing technologies.

cond-mat.mtrl-sci↗

arXiv2022

Giant bulk spin-orbit torque and efficient electrical switching in single ferrimagnetic FeTb layers with strong perpendicular magnetic anisotropy

Efficient manipulation of antiferromagnetically coupled materials that are integration-friendly and have strong perpendicular magnetic anisotropy (PMA) is of great interest for low-power, fast, dense magnetic storage and computing. Here, we report a distinct, giant bulk damping-like spin-orbit torque in strong-PMA ferrimagnetic Fe100-xTbx single layers that are integration-friendly (composition-uniform, amorphous, sputter-deposited). For sufficiently-thick layers, this bulk torque is constant in the efficiency per unit layer thickness, ξ_DL^j/t, with a record-high value of 0.036nm-1, and the dampinglike torque efficiency ξ_DL^j achieves very large values for thick layers, up to 300% for 90 nm layers. This giant bulk torque by itself switches tens of nm thick Fe100-xTbx layers that have very strong PMA and high coercivity at current densities as low as a few MA/cm2. Surprisingly, for a given layer thickness, ξ_DL^j shows strong composition dependence and becomes negative for composition where the total angular momentum is oriented parallel to the magnetization rather than antiparallel. Our findings of giant bulk spin torque efficiency and intriguing torque-compensation correlation will stimulate study of such unique spin-orbit phenomena in a variety of ferrimagnetic hosts. This work paves a promising avenue for developing ultralow-power, fast, dense ferrimagnetic storage and computing devices.

cond-mat.mtrl-sci↗

arXiv2020

Perpendicularly magnetized YIG films with small Gilbert damping constant and anomalous spin transport properties

The Y3Fe5O12 (YIG) films with perpendicular magnetic anisotropy (PMA) have recently attracted a great deal of attention for spintronics applications. Here, we report the induced PMA in the ultrathin YIG films grown on (Gd2.6Ca0.4)(Ga4.1Mg0.25Zr0.65)O12 (SGGG) substrates by epitaxial strain without preprocessing. Reciprocal space mapping shows that the films are lattice-matched to the substrates without strain relaxation. Through ferromagnetic resonance and polarized neutron reflectometry measurements, we find that these YIG films have ultra-low Gilbert damping constant with a magnetic dead layer as thin as about 0.3 nm at the YIG/SGGG interfaces. Moreover, the transport behavior of the Pt/YIG/SGGG films reveals an enhancement of spin mixing conductance and a large non-monotonic magnetic field dependence of anomalous Hall effect as compared with the Pt/YIG/Gd3Ga5O12 (GGG) films. The non-monotonic anomalous Hall signal is extracted in the temperature range from 150 to 350 K, which has been ascribed to the possible non-collinear magnetic order at the Pt/YIG interface induced by uniaxial strain.

cond-mat.mtrl-sci↗