arXiv subjects

Qiangbing Guo

Publications and source records attributed to Qiangbing Guo.

6 recordsLinked to original sources

arXiv2026

Interface Engineered Moir\'e Graphene Superlattices: Breaking the Auger Carrier Multiplication Limit for Infrared Single-Photon Detection

Hot electrons undergo Auger scattering during their relaxation process has a multiplication effect,which can generate more electrons above the Fermi level, thus improving the efficiency of photoelectric signal conversion.However,the photo-current gain brought by the Auger carrier multiplication is generally limited with a value less than 5,due to the rapid recombination of photo-generated charge-carriers and the inherently low light absorption of two-dimensional materials.Herein,by twisting graphene to an interlayer angle of 10 o ,we report a layer-dependent electronic correlations leading to an efficient carrier multiplication gain of 10 3 .This is primarily offered by the additional localized density-of-states at interface of the bi-layer 10 o ,moire graphene,and the enhanced interlayer coupling of electron waves in a five-layer moire graphene superlattice structure.Therefore,we can harvest the hot electrons during their energy relaxation through a thermalized optical phonon bottleneck effect.It is this effect that promotes the accumulated hot electrons to achieve a maximum Auger scattering rate ~ 10 10 *ps -1 *cm -2 .Furthermore,the ballistic transport of these hot electrons and Schottky barrier from a 90 nm thick silicon-on-insulator (SOI) silicon effectively block the thermal noise,thus leading to a highly sensitive near-infrared detection characteristic.At a low incident light power of ~ 10 -13 W/cm 2 ,the resulting signal-to-noise ratio is more than 100 dB.The strengthened electromagnetic interaction from highly thermalized optical phonon in stacked moire graphene is utilized in this work.The hot electron multiplication suggests the applicability of Van der Waals moire superlattice architecture for harvesting charge carriers,thus paving the pathway to design infrared single-photon avalanche detectors.

physics.app-ph↗

arXiv2024

Polarization entanglement enabled by orthogonally stacked van der Waals NbOCl2 crystals

Polarization entanglement holds significant importance for photonic quantum technologies. Recently emerging subwavelength nonlinear quantum light sources, e.g., GaP and LiNbO3 thin films, benefiting from the relaxed phase-matching constraints and volume confinement, has shown intriguing properties, such as high-dimensional hyperentanglement and robust entanglement anti-degradation. Van der Waals (vdW) NbOCl2 crystal, renowned for its superior optical nonlinearities, has emerged as one of ideal candidates for ultrathin quantum light sources [Nature 613, 53 (2023)]. However, polarization-entanglement is inaccessible in NbOCl2 crystal due to its unfavorable nonlinear susceptibility tensor. Here, by leveraging the twist-stacking degree of freedom inherently in vdW systems, we showcase the preparation of tunable polarization entanglement and quantum Bell states. Our work not only provides a new and tunable polarization-entangled vdW photon-pair source, but also introduces a new knob in engineering the entanglement state of quantum light at the nanoscale.

physics.optics↗

arXiv2023

Unusual Nonlinear Optical Responses in Layered Ferroelectric Niobium Oxide Dihalides: Origin and Manipulation

Realization of large and highly tunable second-order nonlinear optical (NLO) responses, e.g., second-harmonic generation (SHG) and bulk photovoltaic effect (BPVE), is critical for developing modern optical and optoelectronic devices. Very recently, the two-dimensional van der Waals ferroelectric NbOX2 (X = Cl, Br or I) are discovered to exhibit unusually large and anisotropic SHG. However, the physical origin and possible tunability of NLO responses in NbOX2 remain to be unclear. In this article, we reveal that the large SHG in NbOCl2 is dominated by the synergy between large transition dipole moment and band-nesting-induced large intensity of electron-hole pairs. Remarkably, the NbOCl2 can exhibit dramatically different strain-dependent BPVE under different polarized light, originating from the interesting light-polarization-dependent orbital transition. Importantly, we successfully achieve a reversible ferroelectric-to-antiferroelectric phase transition via controlling ambient temperature or external pressure, accompanied by the greatly tunable NLO responses. Furthermore, we discover that the evolutions of SHG and BPVE in NbOX2 with variable X obey different rules. Our study provides a deep understanding on the novel NLO physics in NbOX2 and establishes great external-field tunability for device applications.

cond-mat.mtrl-sci↗

arXiv2022

Ultrathin quantum light source enabled by a nonlinear van der Waals crystal with vanishing interlayer-electronic-coupling

Interlayer electronic coupling in two-dimensional (2D) materials enables tunable and emergent properties by stacking engineering. However, it also brings significant evolution of electronic structures and attenuation of excitonic effects in 2D semiconductors as exemplified by quickly degrading excitonic photoluminescence and optical nonlinearities in transition metal dichalcogenides when monolayers are stacked into van der Waals structures. Here we report a novel van der Waals crystal, niobium oxide dichloride, featuring a vanishing interlayer electronic coupling and scalable second harmonic generation intensity of up to three orders higher than that of exciton-resonant monolayer WS2. Importantly, the strong second-order nonlinearity enables correlated parametric photon pair generation, via a spontaneous parametric down-conversion (SPDC) process, in flakes as thin as ~46 nm. To our knowledge, this is the first SPDC source unambiguously demonstrated in 2D layered materials, and the thinnest SPDC source ever reported. Our work opens an avenue towards developing van der Waals material-based ultracompact on-chip SPDC sources, and high-performance photon modulators in both classical and quantum optical technologies.

physics.optics↗

arXiv2017

Sonication-assisted synthesis of semiconducting atomic crystals of germanium monoselenide: An isostructural and isoelectronic analog of black phosphorous

Monochalcogenides of germanium (or tin) are considered as stable isoelectronic and isostructural analogue of black phosphorous. Their two-dimensional (2D) forms have been just predicted to shown strong thickness-dependent physical properties, and even indirect to direct band gap crossover at the monolayer limit. Here, we demonstrate the synthesis of atomically thin GeSe by direct sonication-assisted exfoliation of bulk microcrystalline powders in solvents. The exfoliated few-layer GeSe sheets characterize high crystallinity with lateral sizes over 100 nm and, importantly, strong resistance against oxidation and degradation in ambient conditions. Density functional theory calculation combined with optical characterizations confirm the layer-number dependent optical bandgap, which, for few-layer sheets, is optimal for solar light harvesting, and promising for relevant applications, such as optoelectronics and photonics.

cond-mat.mtrl-sci↗

arXiv2017

Exploiting ITO colloidal nanocrystals for ultrafast pulse generation

Dynamical materials that capable of responding to optical stimuli have always been pursued for designing novel photonic devices and functionalities, of which the response speed and amplitude as well as integration adaptability and energy effectiveness are especially critical. Here we show ultrafast pulse generation by exploiting the ultrafast and sensitive nonlinear dynamical processes in tunably solution-processed colloidal epsilon-near-zero (ENZ) transparent conducting oxide (TCO) nanocrystals (NCs), of which the potential respond response speed is >2 THz and modulation depth is ~23% pumped at ~0.7 mJ/cm2, benefiting from the highly confined geometry in addition to the ENZ enhancement effect. These ENZ NCs may offer a scalable and printable material solution for dynamic photonic and optoelectronic devices.

cond-mat.mtrl-sci↗