arXiv subjects

Qiangsheng Lu

Publications and source records attributed to Qiangsheng Lu.

At least 19 recordsLinked to original sources

arXiv2025

Nanosculpting lateral weak link junctions in superconducting Fe(Te,Se)/Bi2Te3 with focused Si++ ions and implications on vortex pinning

Superconductor-normal-superconductor (SC-N-SC) weak links enable Cooper-pair tunneling and serve as Josephson junctions (JJs) used in modern superconducting qubits. Conventional JJs rely on vertically stacked Al-AlOx-Al trilayers that are difficult to fabricate and are sensitive to ambient exposure. Here, we demonstrate an all-in-plane alternative by "nanosculpting" ~100 nm-wide channels into thin films of FeTe0.75Se0.25/Bi2Te3 (FTS/BT), a candidate topological superconductor, with a Si++ focusses ion beam (FIB). Systematic irradiation shows that increasing the ion dose, while keeping the beam energy constant, progressively suppresses both the critical temperature (Tc) and critical current (Ic), confirming the creation of a controllable weak link even though a Fraunhofer interference pattern is not observed. Kelvin prove force microscopy , atomic force microscopy and scanning electron microscopy corroborate the structural and electronic modification of the irradiated region. Ic (B) measurements reveal a slower field-induced decay of Ic at higher doses, indicating that irradiation-induced defects act as vortex-pinning centers that mitigate vortex motion and associated dissipation, By tuning beam energy and dose, the process shifts from SC-N-SC regime toward a superconductor-insulator-superconductor (SC-I-SC) geometry, offering a simple scalable pathway to JJ fabrication. These results established FIB pattering as a versatile platform for engineering robust, scalable fault-tolerant qubits.

cond-mat.supr-con↗

arXiv2025

Programmable phase selection between altermagnetic and non-centrosymmetric polymorphs of MnTe on InP via molecular beam epitaxy

Phase selecting nearly degenerate crystalline polymorphs during epitaxial growth can be challenging yet is critical to targeting physical properties for specific applications. Here, we establish how phase selectivity of altermagnetic and non-centrosymmetric polymorphs of MnTe with high structural quality and phase purity can be programmed by subtle changes to the surface of lattice-matched InP substrates in molecular beam epitaxial (MBE) growth. Bulk altermagnetic MnTe is thermodynamically stable in the hexagonal NiAs-structure and is synthesized here on the (111)A surface (In-terminated) of InP, while the non-centrosymmetric, cubic ZnS-structure with wide band gap (> 3eV) is stabilized on the (111)B surface (P-terminated). Here we use electron microscopy, photoemission spectroscopy, and reflection high-energy electron diffraction, which together indicate that the phase selection is triggered at the interface and proceeds along the growing surface. First principles calculations suggest that interfacial termination and strain have a significant effect on the interfacial energy; stabilizing the NiAs polymorph on the In-terminated surface and the ZnS structure on the P-terminated surface. Selectively grown, high-quality films of MnTe polymorphs are key platforms that will enable our understanding of the novel properties of these materials, thereby facilitating their use in new applications ranging from spintronics to microelectronic devices.

cond-mat.mtrl-sci↗

arXiv2025

Reversible Modification of Rashba States in Topological Insulators at Room Temperature by Edge Functionalization

Quantum materials with novel spin textures from strong spin-orbit coupling (SOC) are essential components for a wide array of proposed spintronic devices. Topological insulators have necessary strong SOC that imposes a unique spin texture on topological states and Rashba states that arise on the boundary, but there is no established methodology to control the spin texture reversibly. Here, we demonstrate that functionalizing Bi2Se3 films by altering the step-edge termination directly changes the strength of SOC and thereby modifies the Rashba strength of 1D edge states. Scanning tunneling microscopy/spectroscopy shows that these Rashba edge states arise and subsequently vanish through the Se functionalization and reduction process of the step edges. The observations are corroborated by density functional theory calculations, which show that a subtle chemical change of edge termination fundamentally alters the underlying electronic structure. Importantly, we experimentally demonstrated fully reversible and repeatable switching of Rashba edge states across multiple cycles at room temperature. The results imply Se functionalization as a practical method to control SOC and spin texture of quantum states in topological insulators.

cond-mat.mes-hall↗

arXiv2025

Nucleation and Antiphase Twin Control in Bi$_2$Se$_3$ via Step-Terminated Al$_2$O$_3$ Substrates

The epitaxial synthesis of high-quality 2D layered materials is an essential driver of both fundamental physics studies and technological applications. Bi$_2$Se$_3$, a prototypical 2D layered topological insulator, is sensitive to defects imparted during the growth, either thermodynamically or due to the film-substrate interaction. In this study, it is shown that step-terminated Al$_2$O$_3$ substrates with a high miscut angle (3{\deg}) can effectively suppress a particular hard-to-mitigate defect, the antiphase twin. Systematic investigations across a range of growth temperatures and substrate miscut angles confirm that atomic step edges act as preferential nucleation sites, stabilizing a single twin domain. First-principles calculations suggest that there is a significant energy barrier for twin boundary formation at step edges, supporting the experimental observations. Detailed structural characterization indicates that this twin-selectivity is lost through the mechanism of the 2D layers overgrowing the step edges, leading to higher twin density as the thickness increases. These findings highlight the complex energy landscape unique to 2D materials that is driven by the interplay between substrate properties, nucleation dynamics, and defect formation, and overcoming and controlling these are critical to improve material quality for quantum and electronic applications.

cond-mat.mtrl-sci↗

arXiv2025

Coexistence of superconductivity and topological band in a van der Waals Sn1-xInxBi2Te4 crystal

The realization of topological surface states and superconductivity within a single material platform is a crucial step toward achieving topologically nontrivial superconductivity. This can be achieved at an interface between a superconductor and a topological insulator, or within a single material that intrinsically hosts both superconductivity and topological surface states. Here we use scanning tunneling microscopy to study Sn1-xInxBi2Te4 crystals. Spectroscopic evidence reveals the coexistence of topological surface states and superconductivity on the same surface of the crystals. The Te-terminated surface exhibits a single U-shaped superconducting gap with a size of up to 311 μeV, alongside Dirac bands outside the gap. Analysis of the vortex structure and differential conductance suggests weak-coupling s-wave superconductivity. The absence of observed zero modes suggests that shifting the Fermi level closer to the Dirac point of the topological bands is necessary to realize a topological superconducting state.

cond-mat.supr-con↗

arXiv2024

Tunable High Spin Chern-Number Insulator Phases in Strained Sb Monolayer

High spin Chern-number insulators (HSCI) have emerged as a novel 2D topological phase of condensed matter that is beyond the classification of topological quantum chemistry. In this work, we report the observation of a semimetallic Sb monolayer carrying the same band topology as HSCI with a spin Chern number equal to 2. Our calculations further indicate a moderate lattice strain can make Sb monolayer an insulator or a semimetal with a tunable spin Chern number from 0 to 3. The results suggest strained Sb monolayers as a promising platform for exploring exotic properties of the HSCI topological matter.

cond-mat.mtrl-sci↗

arXiv2024

Intricate magnetic landscape in antiferromagnetic kagome metal TbTi$_3$Bi$_4$ and interplay with Ln$_{2-x}$Ti$_{6+x}$Bi$_9$ (Ln: Tb-Lu) shurikagome metals

Here we present the discovery and characterization of the kagome metal TbTi$_3$Bi$_4$ in tandem with a new series of compounds, the Ln$_{2-x}$Ti$_{6+x}$Bi$_9$ (Ln: Tb-Lu) shurikagome metals. We previously reported on the growth of the LnTi$_3$Bi$_4$ (Ln: La-Gd$^{3+}$, Eu$^{2+}$, Yb$^{2+}$) family, a chemically diverse and exfoliable series of kagome metals with complex and highly anisotropic magnetism. However, unlike the La-Gd analogs, TbTi$_3$Bi$_4$ cannot be synthesized by our previous methodology due to phase competition with Ln$_{2-x}$Ti$_{6+x}$Bi$_9$ (x$\sim$1.7-1.2). Here we discuss the phase competition between the LnTi$_3$Bi$_4$ and Ln$_{2-x}$Ti$_{6+x}$Bi$_9$ families, helping to frame the difficulty in synthesizing LnTi$_3$Bi$_4$ compounds with small Ln species and providing a strategy to circumvent formation of Ln$_{2-x}$Ti$_{6+x}$Bi$_9$. Detailed characterization of the magnetic and electronic transport properties on single crystals of TbTi$_3$Bi$_4$ reveals a highly complex landscape of magnetic phases arising from an antiferromagnetic ground state. A series of metamagnetic transitions creates at least 5 unique magnetic phase pockets, including a 1/3 and 2/3 magnetization plateau. Further, the system exhibits an intimate connection between the magnetism and magnetotransport, exhibiting sharp switching from positive (+40%) to negative magnetoresistance (-50%). Like the LnTi$_3$Bi$_4$ kagome metals, the Ln$_{2-x}$Ti$_{6+x}$Bi$_9$ family exhibits quasi-2D networks of titanium and chains of rare-earth. We present the structures and some basic magnetic properties of the Ln$_{2-x}$Ti$_{6+x}$Bi$_9$ family alongside our characterization of the newly discovered TbTi$_3$Bi$_4$.

cond-mat.mtrl-sci↗

arXiv2024

Stoichiometry-induced ferromagnetism in altermagnetic candidate MnTe

The field of spintronics has seen a surge of interest in altermagnetism due to novel predictions and many possible applications. MnTe is a leading altermagnetic candidate that is of significant interest across spintronics due to its layered antiferromagnetic structure, high Neel temperature (TN ~ 310 K) and semiconducting properties. We present results on molecular beam epitaxy (MBE) grown MnTe/InP(111) films. Here, it is found that the electronic and magnetic properties are driven by the natural stoichiometry of MnTe. Electronic transport and in situ angle-resolved photoemission spectroscopy show the films are natively metallic with the Fermi level in the valence band and the band structure is in good agreement with first principles calculations for altermagnetic spin-splitting. Neutron diffraction confirms that the film is antiferromagnetic with planar anisotropy and polarized neutron reflectometry indicates weak ferromagnetism, which is linked to a slight Mn-richness that is intrinsic to the MBE grown samples. When combined with the anomalous Hall effect, this work shows that the electronic response is strongly affected by the ferromagnetic moment. Altogether, this highlights potential mechanisms for controlling altermagnetic ordering for diverse spintronic applications.

cond-mat.mtrl-sci↗

arXiv2024

Interfacially enhanced superconductivity in Fe(Te,Se)/Bi4Te3 heterostructures

Realizing topological superconductivity by integrating high-transition-temperature ($T_C$) superconductors with topological insulators can open new paths for quantum computing applications. Here, we report a new approach for increasing the superconducting transition temperature ($T_{C}^{onset}$) by interfacing the unconventional superconductor Fe(Te,Se) with the topological insulator Bi-Te system in the low-Se doping regime, near where superconductivity vanishes in the bulk. The critical finding is that the $T_{C}^{onset}$ of Fe(Te,Se) increases from nominally non-superconducting to as high as 12.5 K when $Bi_2Te_3$ is replaced with the topological phase $Bi_4Te_3$. Interfacing Fe(Te,Se) with $Bi_4Te_3$ is also found to be critical for stabilizing superconductivity in monolayer films where $T_{C}^{onset}$ can be as high as 6 K. Measurements of the electronic and crystalline structure of the $Bi_4Te_3$ layer reveal that a large electron transfer, epitaxial strain, and novel chemical reduction processes are critical factors for the enhancement of superconductivity. This novel route for enhancing $T_C$ in an important epitaxial system provides new insight on the nature of interfacial superconductivity and a platform to identify and utilize new electronic phases.

cond-mat.supr-con↗

arXiv2023

Ferroelectric Semimetals with $α$-Bi/SnSe van der Waals heterostructures and its Topological Currents

We show that proximity effects can be utilized to engineer van der Waals heterostructures (vd- WHs) displaying spin-ferroelectricity locking, where ferroelectricity and spin states are confined to different layers, but are correlated by means of proximity effects. Our findings are supported by first principles calculations in $α$-Bi/SnSe bilayers. We show that such systems support ferroelectrically switchable non-linear anomalous Hall effect originating from large Berry curvature dipoles as well as direct and inverse spin Hall effects with giant bulk spin-charge interconversion efficiencies. The giant efficiencies are consequences of the proximity-induced semimetallic nature of low energy electron states, which are shown to behave as two-dimensional pseudo-Weyl fermions by means of symmetry analysis, first principles calculations as well as direct angle-resolved photoemission spectroscopy measurements.

cond-mat.mtrl-sci↗

arXiv2023

Observation of 2D Weyl Fermion States in Epitaxial Bismuthene

A two-dimensional (2D) Weyl semimetal featuring a spin-polarized linear band dispersion and a nodal Fermi surface is a new topological phase of matter. It is a solid-state realization of Weyl fermions in an intrinsic 2D system. The nontrivial topology of 2D Weyl cones guarantees the existence of a new form of topologically protected boundary states, Fermi string edge states. In this work, we report the realization of a 2D Weyl semimetal in monolayer-thick epitaxial bismuthene grown on SnS(Se) substrate. The intrinsic band gap of bismuthene is eliminated by the space-inversion-symmetry-breaking substrate perturbations, resulting in a gapless spin-polarized Weyl band dispersion. The linear dispersion and spin polarization of the Weyl fermion states are observed in our spin and angle-resolved photoemission measurements. In addition, the scanning tunneling microscopy/spectroscopy reveals a pronounced local density of states at the edge, suggesting the existence of Fermi string edge states. These results open the door for the experimental exploration of the exotic properties of Weyl fermion states in reduced dimensions.

cond-mat.mtrl-sci↗

arXiv2023

Emergence of a new band and the Lifshitz transition in kagome metal ScV$_6$Sn$_6$ with charge density wave

Topological kagome systems have been a topic of great interest in condensed matter physics due totheir unique electronic properties. The vanadium-based kagome materials are particularly intrigu-ing since they exhibit exotic phenomena such as charge density wave (CDW) and unconventionalsuperconductivity. The origin of these electronic instabilities is not fully understood, and the re-cent discovery of a charge density wave in ScV6Sn6provides a new avenue for investigation. In thiswork, we investigate the electronic structure of the novel kagome metal ScV6Sn6using angle resolvedphotoemission spectroscopy (ARPES), scanning tunneling microscopy (STM), and first-principlesdensity functional theory calculations. Our analysis reveals for the first time the temperature-dependent band changes of ScV6Sn6and identifies a new band that exhibits a strong signatureof a structure with CDW below the critical temperature. Further analysis revealed that this newband is due to the surface kagome layer of the CDW structure. In addition, a Lifshitz transition isidentified in the ARPES spectra that is related to the saddle point moving across the Fermi levelat the critical temperature for the CDW formation. This result shows the CDW behavior may alsobe related to nesting of the saddle point, similar to related materials. However, no energy gap is observed at the Fermi level and thus the CDW is not a typical Fermi surface nesting scenario. These results provide new insights into the underlying physics of the CDW in the kagome materials and could have implications for the development of materials with new functionality.

cond-mat.str-el↗

arXiv2022

Observation of Gapped Topological Surface States and Isolated Surface Resonances in PdTe$_2$ Ultrathin Films

The superconductor PdTe$_2$ is known to host bulk Dirac bands and topological surface states. The coexistence of superconductivity and topological surface states makes PdTe$_2$ a promising platform for exploring topological superconductivity and Majorana bound states. In this work, we report the layer-by-layer molecular beam epitaxy growth and spectroscopic characterization of high quality PdTe$_2$ films with thickness down to 3 monolayers (ML). In the 3 ML PdTe$_2$ film, we observed spin-polarized surface resonance states, which are isolated from the bulk bands due to the quantum size effects. In addition, the hybridization of surface states on opposite faces leads to a thickness-dependent gap in the topological surface Dirac bands. Our photoemission results show clearly that the size of the hybridization gap increases as the film thickness is reduced. The success in growing high quality PdTe$_2$ films by state-of-art molecular beam epitaxy technique and the observation of surface resonances and gaped topological surface states sheds light on the applications of PdTe$_2$ quantum films in spintronics and topological computation.

cond-mat.mes-hall↗

arXiv2022

Moiré Modulated Lattice Strain and Thickness-Dependent Lattice Expansion in Epitaxial Ultrathin Films of PdTe$_2$

We report the epitaxial growth of PdTe$_2$ ultrathin films on topological insulator Bi$_2$Se$_3$. A prominent Moiré pattern was observed in STM measurements. The Moiré periodicity increases as film thickness decreases, indicating a lattice expansion of epitaxial PdTe$_2$ thin films with lower thicknesses. In addition, our simulations based on Moiré Metrology reveal uniaxial lattice strains at the edge of PdTe$_2$ domains, and anisotropic strain distributions throughout the Moiré supercell with a net change in lattice strain up to ~2.9%. Our DFT calculations show that this strain effect leads to a narrowing of the band gap at $Γ$ point near the Fermi level. Under a strain of ~2.8%, the band gap at $Γ$ closes completely. Further increasing the lattice strain makes the band gap reopen and the order of conduction band and valence bands inverted in energy. The results offer a proof of concept for constructing quantum grids of topological materials under the modulation of Moiré potentials.

cond-mat.mes-hall↗

arXiv2021

Observation of Unpinned Two-Dimensional Dirac States in Antimony Single Layers with Phosphorene Structure

The discovery of graphene has stimulated enormous interest in two-dimensional (2D) electron gas with linear band structure. 2D Dirac materials possess many intriguing physical properties such as high carrier mobility and zero-energy Landau level thanks to the relativistic dispersion and chiral spin/pseudospin texture. 2D Dirac states discovered so far are exclusively pinned at high-symmetry points of the Brillouin zone, for example, surface Dirac states at $\overlineΓ$ in topological insulators Bi$_2$Se(Te)$_3$ and Dirac cones at $K$ and $K'$ in graphene. In this work, we report the realization of 2D Dirac states at generic $k$-points in antimony atomic layers with phosphorene structure ($i.e.$ $α$-antimonene). The unpinned nature enables versatile ways to control the locations of the Dirac points in momentum space. In addition, dispersions around the unpinned Dirac points exhibit intrinsically anisotropic behaviors due to the reduced symmetry of generic momentum points. These properties make the $α$-antimonene films a promising platform for exploring interesting physics in unpinned 2D Dirac fermions that are distinct from the conventional Dirac states in graphene.

cond-mat.mes-hall↗

arXiv2021

Observation of Symmetry-Protected Dirac States in Nonsymmorphic $α$-Antimonene

Two-dimensional (2D) Dirac states with linear band dispersion have attracted enormous interest since the discovery of graphene. However, to date, 2D Dirac semimetals are still very rare due to the fact that 2D Dirac states are generally fragile against perturbations such as spin-orbit couplings. Nonsymmorphic crystal symmetries can enforce the formation of Dirac nodes, providing a new route to establishing symmetry-protected Dirac states in 2D materials. Here we report the symmetry-protected Dirac states in nonsymmorphic alpha-antimonene. The antimonene was synthesized by the method of molecular beam epitaxy. Two Dirac cones with large anisotropy were observed by angle-resolved photoemission spectroscopy. The Dirac state in alpha-antimonene is of spin-orbit type in contrast to the spinless Dirac states in graphene. The result extends the 'graphene' physics into a new family of 2D materials where spin-orbit coupling is present.

cond-mat.mes-hall↗

arXiv2021

Giant Topological Hall Effect in van der Waals Heterostructures of CrTe2/Bi2Te3

Discoveries of interfacial topological Hall effect (THE) provide an ideal platform for exploring physics arising from the interplay between topology and magnetism. The interfacial topological Hall effect is closely related to the Dzyaloshinskii-Moriya interaction (DMI) at interface and topological spin textures. However, it is difficult to achieve a sizable THE in heterostructures due to the stringent constraints on the constituents of THE heterostructures such as strong spin-orbit coupling (SOC). Here we report the observation of a giant THE signal of 1.39 $μΩ\cdot$cm in the van der Waals heterostructures of CrTe2/Bi2Te3 fabricated by molecular beam epitaxy, a prototype of two-dimensional (2D) ferromagnet (FM)/topological insulator (TI). This large magnitude of THE is attributed to an optimized combination of 2D ferromagnetism in CrTe2, strong SOC in Bi2Te3, and an atomically sharp interface. Our work reveals CrTe2/Bi2Te3 as a convenient platform for achieving large interfacial THE in hybrid systems, which could be utilized to develop quantum science and high-density information storage.

cond-mat.mes-hall↗

arXiv2021

Dirac Fermion Cloning, Moir$\bf{é}$ Flat Bands and Magic Lattice Constants in Epitaxial Monolayer Graphene

Tuning interactions between Dirac states in graphene has attracted enormous interest because it can modify the electronic spectrum of the two-dimensional material, enhance electron correlations, and give rise to novel condensed-matter phases such as superconductors, Mott insulators, Wigner crystals and quantum anomalous Hall insulators. Previous works predominantly focus on the flat band dispersion of coupled Dirac states from different graphene layers. In this work, we propose a new route to realizing flat band physics in monolayer graphene under a periodic modulation from substrates. We take gaphene/SiC heterostructure as a role model and demonstrate experimentally the substrate modulation leads to Dirac fermion cloning and consequently, the proximity of the two Dirac cones of monolayer graphene in momentum space. Our theoretical modeling captures the cloning mechanism of Dirac states and indicates that flat bands can emerge at certain magic lattice constants of substrate when the period of modulation becomes nearly commensurate with the $(\sqrt{3}\times\sqrt{3})R30^{\circ}$ supercell of graphene. The results show that the epitaxial monolayer graphene is a promising platform for exploring exotic many-body quantum phases arising from interactions between Dirac electrons.

cond-mat.mes-hall↗