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Qiaoling Xu

Publications and source records attributed to Qiaoling Xu.

13 recordsLinked to original sources

Organizing Principles for Moir\'e Quantum Matter

Moir\'e flat bands in van der Waals bilayers are usually discussed through a small set of mechanisms associated with the $\Gamma$ and $K$ valleys of hexagonal crystals, and more recently with $M$-valleys systems. Here we show that this view is incomplete. The momentum-space location and effective local orbital character of the monolayer's band edge, in conjunction with the moir\'e symmetry and the symmetry representations of the resulting bands, provide a general set of organizing variables for the emergent low-energy moir\'e Hamiltonian. Applying fully relaxed first-principles calculations, band unfolding and symmetry-representation analysis to more than 600 commensurate twisted bilayers spanning all 2D lattice classes, we identify several routes to moir\'e quantum matter beyond the conventional single-orbital paradigm. The resulting flat bands realize trigonal, honeycomb, square, checkerboard and kagome-like Hubbard models with single-orbital, multi-orbital and multi-site Hilbert spaces; spin-orbit-coupled multi-orbital flat bands exhibit symmetry-indicated topology beyond the conventional $K$-valley setting; and nonsymmorphic moir\'e symmetries enforce semimetallic flat-band connectivity. Analogous quasi-one-dimensional flat-band structures are found in $M$-valley hexagonal systems and $X$-valley square or rectangular systems resulting from emergent momentum-space nonsymmorphic symmetries. Separately, coupled multi-valley manifolds with kagome-like connectivity are identified in several systems whose parent band edges lie at non-high-symmetry points. These results establish a valley-orbital-symmetry framework for connecting parent-material electronic structure to emergent moir\'e Hamiltonians relevant to correlated, topological and symmetry-enforced moir\'e phases.

cond-mat.mtrl-sci

Critical angles and one-dimensional moir\'e physics in twisted rectangular lattices

Engineering moir\'e superlattices in van der Waals heterostructures provides fundamental control over emergent electronic, structural, and optical properties allowing to affect topological and correlated phenomena. This control is achieved through imposed periodic modulation of potentials and targeted modifications of symmetries. For twisted bilayers of van der Waals materials with rectangular lattices, such as PdSe2, this work shows that one-dimensional (1D) moir\'e patterns emerge universally. This emergence is driven by a series of critical twist angles (CAs). We investigate the geometric origins of these unique 1D moir\'e patterns and develop a universal mathematical framework to predict the CAs in twisted rectangular lattices. Through a density functional theory (DFT) description of the electronic properties of twisted bilayer PdSe2, we further reveal directionally localized flat band structures, localized charge densities and strong spin-orbit coupling along the dispersive direction which points to the emergence of an effectively 1D strongly spin-orbit coupled electronic systems. This establishes twisted rectangular systems as a unique platform for engineering low-symmetry moir\'e patterns, low-dimensional strongly correlated and topological physics, and spatially selective quantum phases beyond the isotropic paradigms of hexagonal moir\'e materials.

cond-mat.mes-hall

Quantum melting of generalized electron crystal in twisted bilayer MoSe2

Electrons can form an ordered solid crystal phase ascribed to the interplay between Coulomb repulsion and kinetic energy. Tuning these energy scales can drive a phase transition from electron solid to liquid, i.e. melting of Wigner crystal. Generalized Wigner crystals (GWCs) pinned to moire superlattices have been reported by optical and scanning-probe-based methods. Using transport measurements to investigate GWCs is vital to a complete characterization, however, still poses a significant challenge due to difficulties in making reliable electrical contacts. Here, we report the electrical transport detection of GWCs at fractional fillings nu = 2/5, 1/2, 3/5, 2/3, 8/9, 10/9, and 4/3 in twisted bilayer MoSe2. We further observe that these GWCs undergo continuous quantum melting transitions to liquid phases by tuning doping density, magnetic and displacement fields, manifested by quantum critical scaling behaviors. Our findings establish twisted bilayer MoSe2 as a novel system to study strongly correlated states of matter and their quantum phase transitions.

cond-mat.str-el

2D Theoretically Twistable Material Database

The study of twisted two-dimensional (2D) materials, where twisting layers create moir\'e superlattices, has opened new opportunities for investigating topological phases and strongly correlated physics. While systems such as twisted bilayer graphene (TBG) and twisted transition metal dichalcogenides (TMDs) have been extensively studied, the broader potential of a seemingly infinite set of other twistable 2D materials remains largely unexplored. In this paper, we define "theoretically twistable materials" as single- or multi-layer structures that allow for the construction of simple continuum models of their moir\'e structures. This excludes, for example, materials with a "spaghetti" of bands or those with numerous crossing points at the Fermi level, for which theoretical moir\'e modeling is unfeasible. We present a high-throughput algorithm that systematically searches for theoretically twistable semimetals and insulators based on the Topological 2D Materials Database. By analyzing key electronic properties, we identify thousands of new candidate materials that could host rich topological and strongly correlated phenomena when twisted. We propose representative twistable materials for realizing different types of moir\'e systems, including materials with different Bravais lattices, valleys, and strength of spin-orbital coupling. We provide examples of crystal growth for several of these materials and showcase twisted bilayer band structures along with simplified twisted continuum models. Our results significantly broaden the scope of moir\'e heterostructures and provide a valuable resource for future experimental and theoretical studies on novel moir\'e systems.

cond-mat.mtrl-sci

Two dimensional covalent moire superlattice from fluorinating twisted bilayer graphene

Moire materials exhibit diverse quantum properties such as superconductivity and correlated topo logical phases, making them ideal for studying strongly correlated systems. While moire materials are typically formed by stacking two-dimensional materials with interlayer interaction dominated by weak van der Waals (vdW) forces, we explore the possibility for constructing moire covalent super lattices by fluorinating twisted bilayer graphene. With first principle calculations, we demonstrate that fluorination of twisted bilayer graphene (TBG) can induce covalent bonds between adjacent layers, transforming the vdW-dominated interactions. This results in enhanced modulation of the electronic structure, with abundant flat bands across the spectrum. Our findings suggest that cova lent moire superlattices offer new platforms for exploring correlated quantum phenomena and moire covalent chemistry.

cond-mat.str-el

Engineering 2D square lattice Hubbard models in 90$^\circ$ twisted Ge/SnX (X=S, Se) moir\'e supperlattices

Due to the large-period superlattices emerging in moire two-dimensional (2D) materials, electronic states in such systems exhibit low energy flat bands that can be used to simulate strongly correlated physics in a highly tunable setup. While many investigations have thus far focused on moire flat bands and emergent correlated electron physics in triangular, honeycomb and quasi-one-dimensional lattices, tunable moire realizations of square lattices subject to strong correlations remain elusive. Here we propose a feasible scheme to construct moire square lattice systems by twisting two or more layers of 2D materials in a rectangular lattice by 90 degrees. We demonstrate the concept with twisted GeX/SnX (X=S, Se) moire superlattices and calculate their electronic structures from first principles. We show that the lowest conduction flat band in these systems can be described by a square lattice Hubbard model with parameters which can be controlled by varying the choice of host materials, number of layers, and external electric fields. In particular, twisted double bilayer GeSe realizes a square lattice Hubbard model with strong frustration due to the next nearest neighbour hopping that could host unconventional superconductivity{, in close analogy to the Hubbard model for copper-oxygen planes of cuprate high-temperature superconductors}. The presented scheme uses 90-degree twisted 2D materials with rectangular unit cells as a promising platform for realizing the physical phenomena of square lattice Hubbard models, establishing a new route for studying its rich phase diagram of magnetism, charge order, and unconventional superconductivity in a highly tunable setting.

cond-mat.str-el

Room-temperature correlated states in twisted bilayer MoS$_2$

Moiré superlattices have emerged as an exciting condensed-matter quantum simulator for exploring the exotic physics of strong electronic correlations. Notable progress has been witnessed, but such correlated states are achievable usually at low temperatures. Here, we report the transport evidences of room-temperature correlated electronic states and layer-hybridized SU(4) Hubbard model simulator in AB-stacked MoS$_2$ homo-bilayer moiré superlattices. Correlated insulating states at moiré band filling factors v = 1, 2, 3 are unambiguously established in twisted bilayer MoS$_2$. Remarkably, the correlated electronic states can persist up to a record-high critical temperature of over 285 K. The realization of room-temperature correlated states in twisted bilayer MoS$_2$ can be understood as the cooperation effects of the stacking-specific atomic reconstruction and the resonantly enhanced interlayer hybridization, which largely amplify the moiré superlattice effects on electronic correlations. Furthermore, extreme large non-linear Hall responses up to room-temperature are uncovered near correlated insulating states, demonstrating the quantum geometry of moiré flat conduction band.

cond-mat.mtrl-sci

Moiré Engineering of Spin-Orbit Coupling in Twisted Platinum Diselenide

We study the electronic structure and correlated phases of twisted bilayers of platinum diselenide using large-scale ab initio simulations combined with the functional renormalization group. PtSe$_2$ is a group-X transition metal dichalcogenide, which hosts emergent flat bands at small twist angles in the twisted bilayer. Remarkably, we find that moiré engineering can be used to tune the strength of Rashba spin-orbit interactions, altering the electronic behavior in a novel manner. We reveal that an effective triangular lattice with a twist-controlled ratio between kinetic and spin-orbit coupling scales can be realized. Even dominant spin-orbit coupling can be accessed in this way and we discuss consequences for the interaction driven phase diagram, which features pronounced exotic superconducting and entangled spin-charge density waves.

cond-mat.str-el

Moire flat bands in twisted 2D hexagonal vdW material

Moire superlattices in twisted bilayer graphene (TBG) and its derived structures can host exotic correlated quantum phenomena because the narrow moire flat minibands in those systems effectively enhance the electron-electron interaction. Correlated phenomena are also observed in 2H-transitional metal dichalcogenides moire superlattices. However, the number of moire systems that have been explored in experiments are still very limited. Here we theoretically investigate a series of two-dimensional (2D) twisted bilayer hexagonal materials (TBHMs) beyond TBG at fixed angles of 7.34 and 67.34 degree with 22 2D van der Waals (vdW) layered materials that are commonly studied in experiments. First-principles calculations are employed to systemically study the moire minibands in these systems. We find that flat bands with narrow bandwidth generally exist in these systems. Some of the systems such as twisted bilayer In2Se3, InSe, GaSe, GaS and PtS2 even host ultra-flat bands with bandwidth less than 20 meV even for such large angles, which make them especially appealing for further experimental investigations. We further analysis the characters of moire flat bands and provides guidance for further exploration of 2D moire superlattices that could host strong electron correlations.

cond-mat.mtrl-sci

Design of Lead-Free Inorganic Halide Perovskites for Solar Cells via Cation-Transmutation

Hybrid organic-inorganic halide perovskites with the prototype material of CH$_{3}$NH$_{3}$PbI$_{3}$ have recently attracted intense interest as low-cost and high-performance photovoltaic absorbers. Despite the high power conversion efficiency exceeding 20% achieved by their solar cells, two key issues -- the poor device stabilities associated with their intrinsic material instability and the toxicity due to water soluble Pb$^{2+}$ -- need to be resolved before large-scale commercialization. Here, we address these issues by exploiting the strategy of cation-transmutation to design stable inorganic Pb-free halide perovskites for solar cells. The idea is to convert two divalent Pb$^{2+}$ ions into one monovalent M$^{+}$ and one trivalent M$^{3+}$ ions, forming a rich class of quaternary halides in double-perovskite structure. We find through first-principles calculations this class of materials have good phase stability against decomposition and wide-range tunable optoelectronic properties. With photovoltaic-functionality-directed materials screening, we identify eleven optimal materials with intrinsic thermodynamic stability, suitable band gaps, small carrier effective masses, and low excitons binding energies as promising candidates to replace Pb-based photovoltaic absorbers in perovskite solar cells. The chemical trends of phase stabilities and electronic properties are also established for this class of materials, offering useful guidance for the development of perovskite solar cells fabricated with them.

cond-mat.mtrl-sci

Functionality-directed Screening of Pb-free Hybrid Organic-inorganic Perovskites with Desired Intrinsic Photovoltaic Functionalities

The material class of hybrid organic-inorganic perovskites has risen rapidly from a virtually unknown material in photovoltaic applications a short 7 years ago into a ~20% efficient thin-film solar cell material. As promising as this class of materials is, however, there are limitations associated with its poor long-term stability, non-optimal band gap, presence of environmentally-toxic Pb element, etc. We herein apply a functionality-directed theoretical materials selection approach as a filter for initial screening of the compounds that satisfy the desired intrinsic photovoltaic functionalities and might overcome the above limitations. First-principles calculations are employed to systemically study thermodynamic stability and photovoltaic-related properties of hundred of candidate hybrid perovskites. We have identified in this materials selection process fourteen Ge and Sn-based materials with potential superior bulk-material-intrinsic photovoltaic performance. A distinct class of compounds containing NH3COH$^+$ with the organic molecule derived states intriguingly emerging at band-edges is found. Comparison of various candidate materials offers insights on how composition variation and microscopic structural changes affect key photovoltaic relevant properties in this family of materials.

cond-mat.mtrl-sci

Sn(II)-containing phosphates as optoelectronic materials

We theoretically investigate Sn(II) phosphates as optoelectronic materials using first principles calculations. We focus on known prototype materials Sn$_n$P$_2$O$_{5+n}$ (n=2, 3, 4, 5) and a previously unreported compound, SnP$_2$O$_6$ (n=1), which we find using global optimization structure prediction. The electronic structure calculations indicate that these compounds all have large band gaps above 3.2 eV, meaning their transparency to visible light. Several of these compounds show relatively low hole effective masses ($\sim$2-3 m$_0$), comparable the electron masses. This suggests potential bipolar conductivity depending on doping. The dispersive valence band-edges underlying the low hole masses, originate from the anti-bonding hybridization between the Sn 5s orbitals and the phosphate groups. Analysis of structure-property relationships for the metastable structures generated during structure search shows considerable variation in combinations of band gap and carrier effective masses, implying chemical tunability of these properties. The unusual combinations of relatively high band gap, low carrier masses and high chemical stability suggests possible optoelectronic applications of these Sn(II) phosphates, including p-type transparent conductors. Related to this, calculations for doped material indicate low visible light absorption, combined with high plasma frequencies.

cond-mat.mtrl-sci

Design of ternary alkaline-earth metal Sn(II) oxides with potential good p-type conductivity

Oxides with good p-type conductivity have been long sought after to achieve high performance all-oxide optoelectronic devices. Divalent Sn(II) based oxides are promising candidates because of their rather dispersive upper valence bands caused by the Sn-5s/O-2p anti-bonding hybridization. There are so far few known Sn(II) oxides being p-type conductive suitable for device applications. Here, we present via first-principles global optimization structure searches a material design study for a hitherto unexplored Sn(II)-based system, ternary alkaline-earth metal Sn(II) oxides in the stoichiometry of MSn2O3 (M = Mg, Ca, Sr, Ba). We identify two stable compounds of SrSn2O3 and BaSn2O3, which can be stabilized by Sn-rich conditions in phase stability diagrams. Their structures follow the Zintl behaviour and consist of basic structural motifs of SnO3 tetrahedra. Unexpectedly they show distinct electronic properties with band gaps ranging from 1.90 (BaSn2O3) to 3.15 (SrSn2O3) eV, and hole effective masses ranging from 0.87 (BaSn2O3) to above 6.0 (SrSn2O3) m0. Further exploration of metastable phases indicates a wide tunability of electronic properties controlled by the details of the bonding between the basic structural motifs. This suggests further exploration of alkaline-earth metal Sn(II) oxides for potential applications requiring good p-type conductivity such as transparent conductors and photovoltaic absorbers.

cond-mat.mtrl-sci