arXiv subjects

Qihua Zhang

Publications and source records attributed to Qihua Zhang.

8 recordsLinked to original sources

arXiv2026

Transport Evidence of Magnetic Polarization in the Altermagnetic Candidate MnTe

The ability to precisely control magnetic properties is central to the development of future spin-based electronics. In this work, we report the successful growth of epitaxial α-MnTe thin films on InP(111) substrates using molecular beam epitaxy. Magneto-transport measurements at low temperatures reveal a distinct, hysteretic butterfly longitudinal magnetoresistance alongside a nonlinear transverse magneto-resistance response, suggesting the presence of a finite net magnetic polarization in the films. To understand the origin of this behavior, density functional theory (DFT) calculations were performed. While pristine bulk MnTe is a compensated antiferromagnet, our computational results suggest multiple pathways through which a finite magnetization can emerge in thin-film geometries, including interface-induced symmetry breaking and point defects. These findings demonstrate an epitaxial route for engineering magnetic responses in thin films.

cond-mat.mtrl-sci↗

arXiv2026

Molecular Beam Epitaxy of Mn2In2Se5 van der Waals Layers Using Mn Intercalation

The weak van der Waals (vdW) force in layered chalcogenide materials has enabled the growth of ternary chalcogenide layers using unconventional approaches. Here, we report the molecular beam epitaxy (MBE) growth of Mn2In2Se5, a spin glass material with high level of magnetic frustration, through the heterointegration of MnSe on In2Se3. Directly depositing α-MnSe on the vdW In2Se3 layers results in Mn intercalation, transforming the In2Se3 layer into Mn2In2Se5. Large growth windows, including substrate temperatures from 250-450 °C and Se:Mn flux ratio of 1.1-3.1, have been identified for the intercalation process. With an optimized MnSe deposition time, smooth, single-crystalline, and (0001)-oriented Mn2In2Se5 layers with a root-mean-square (RMS) roughness of 1.5 nm can be synthesized. Further extending the MnSe deposition time results in the growth of uniform rock-salt structured α-MnSe (111) layers with a thickness of up to 8 nm and a narrow full-width-at-half-maximum (FWHM) of 0.35° in MnSe (222) XRD rocking curves. This report presents a unique approach for the growths of uniform and single-crystalline Mn2In2Se5 vdW layers using MBE, and potentially opens a pathway for synthesis of ternary vdW chalcogenides by intercalation of new atomic species in binary vdW chalcogenides.

cond-mat.mtrl-sci↗

arXiv2026

Molecular Beam Epitaxy Growth of Wafer-scale SnSe van der Waals Ultrathin Layers

Tin selenide (SnSe) is a van der Waals (vdW) layered post-transition metal monochalcogenide compound which is promising for a wide range of device applications when its thickness is reduced to a few layers. Hence, developing a mature synthesis technique to obtain wafer-scale, high-quality ultrathin SnSe layers is crucial. In this work, we present a comprehensive study on the effect of growth parameters on the material quality of ultrathin SnSe thin films grown by molecular beam epitaxy. A growth window including substrate temperature of 210-270°C and low Se/Sn flux ratio with Se valve position of 10-30 mils has been identified which results in SnSe films with root-mean-square (RMS) roughness as low as 0.6 nm and full-width-at-half-maximum (FWHM) of 0.1° in SnSe (400) x-ray diffraction (XRD) rocking curve. Finally, using a three-step growth approach, we demonstrate wafer-scale coalesced ultrathin SnSe layers with thicknesses from 20 nm down to 5 nm, with good crystallinity, structural quality, and surface morphology. This work establishes a growth condition framework for MBE-grown SnSe and presents a viable route for developing wafer-scale single-layer films, unlocking the potential of this highly promising material for advanced device integration.

cond-mat.mtrl-sci↗

arXiv2025

Examining the Spin Structure of Altermagnetic Candidate MnTe Grown with Near Ideal Stoichiometry

Altermagnets are a recently-discovered class of materials with magnetic ordering that have a zero net magnetization and a momentum-dependent spin splitting in their band structure, arising from a collinear spin arrangement with alternating polarizations in the crystal lattice. The nickeline-structured manganese telluride (α-MnTe) is an attractive altermagnet candidate due to its predicted large spin splitting energy and a transition temperature near 300K. In this work, we present a thorough investigation of the spin structure of α-MnTe thin films grown by molecular beam epitaxy with very high crystal quality and low residual magnetization. The epitaxial α-MnTe films have a full-width-at-half-maximum of 0.1° as measured by x-ray-diffraction rocking curves and a root-mean-square roughness below 1 nm. Neutron diffraction measurements confirm the antiferromagnetic order in the α-MnTe film and show a Néel temperature of 307 K. Polarized neutron reflectometry detects a vanishingly small net magnetization which may be confined to the MnTe/InP interface, highlighting the near-ideal stoichiometry in the sample. In vacuo angle resolved photoemission spectroscopy reveals that the bulk band spectrum of the MnTe films is consistent with the weak altermagnetic order as theoretically predicted and observed for the high symmetry nodal plane in the center of the Brillouin zone. This study establishes optimized growth conditions for the synthesis of stoichiometric α-MnTe thin films which exhibit exceptional structural and magnetic ordering, thereby providing a robust platform for the precise characterization of their altermagnetic properties.

cond-mat.mtrl-sci↗

arXiv2025

Perspective: Mitigation of structural defects during the growth of two-dimensional van der Waals chalcogenides by molecular beam epitaxy

The growth of wafer-scale van der Waals (vdW) thin films and heterostructures by molecular beam epitaxy (MBE) is important for future applications in quantum technologies, next generation optoelectronic devices, and fundamental physics investigations. When grown using co-deposition methods that are typically used for compound semiconductor MBE, vdW materials typically show a high density of structural defects including twin or antiphase domains, spiral growth, and pyramidal growth. These defects are caused by the relatively weak film/substrate interaction and/or the poor wettability of typical substrates by many vdW materials. These difficulties can be mitigated using a multi-step growth procedure in which growth stages including nucleation and coalescence can be rigorously controlled, resulting in high-quality deposition of vdW thin films. This article will describe a general recipe for the growth of highly-crystalline wafer-scale vdW thin films by MBE.

cond-mat.mtrl-sci↗

arXiv2024

Growth Conditions and Interfacial Misfit Array in SnTe (111) films Grown on InP (111)A Substrates by Molecular Beam Epitaxy

Tin telluride (SnTe) is an IV-VI semiconductor with a topological crystalline insulator band structure, high thermoelectric performance, and in-plane ferroelectricity. Despite its many applications, there has been little work focused on understanding the growth mechanisms of SnTe thin films. In this manuscript, we investigate the molecular beam epitaxy (MBE) synthesis of SnTe (111) thin films on InP (111)A substrates. We explore the effect of substrate temperature, Te:Sn flux ratio, and growth rate on the film quality. Using a substrate temperature of 340 °C, a Te:Sn flux ratio of 3, and a growth rate of 0.48 Å/s, fully coalesced and single crystalline SnTe (111) epitaxial layers with x-ray rocking curve full-width-at-half-maxima (FWHM) of 0.09° and root-mean-square surface roughness as low as 0.2 nm have been obtained. Despite the 7.5% lattice mismatch between the SnTe (111) film and the InP (111)A substrate, reciprocal space mapping indicates that the 15 nm SnTe layer is fully relaxed. We show that a periodic interfacial misfit (IMF) dislocation array forms at the SnTe/InP heterointerface, where each IMF dislocation is separated by 14 InP lattice sites/13 SnTe lattice sites, providing rapid strain relaxation and yielding the high quality SnTe layer. This is the first report of an IMF array forming in a rock-salt on zinc-blende material system and at an IV-VI on III-V heterointerface, and highlights the potential for SnTe as a buffer layer for epitaxial telluride film growth. This work represents an important milestone in enabling the heterointegration between IV-VI and III-V semiconductors to create multifunctional devices.

cond-mat.mtrl-sci↗

arXiv2024

Review of Nanolayered Post-transition Metal Monochalcogenides: Synthesis, Properties, and Applications

Nanolayered post-transition metal monochalcogenides (PTMMCs) stand out as promising advanced two-dimensional (2D) materials. Beyond inheriting the general advantages associated with traditional 2D materials, they exhibit unique properties, including a wide bandgap range covering the ultraviolet to the mid-infrared spectral ranges, thickness-dependent bandgap behaviors, good nonlinear optical performance, high thermoelectric coefficients, and ferroelectricity. Consequently, these materials hold significant potential in diverse applications such as photodetectors, field effect transistors, thermoelectrics, ferroelectrics, photovoltaics, and electrochemical devices, especially in the manufacturing of nanoscale devices. However, there is still a lack of systematic understanding of the PTMMC family. This study provides a broad overview of the crystal structures, bandgap structures, synthesis methods, physical properties, and state-of-the-art applications of PTMMC materials with a motif of X-M-M-X (M=Ga, In, Ge, Sn; X=S, Se, Te). An outlook for the development trends is emphasized at the end, underscoring the critical importance of this work to the future exploration of nanolayered PTMMCs.

cond-mat.mtrl-sci↗

arXiv2022

Multi-Task Fusion via Reinforcement Learning for Long-Term User Satisfaction in Recommender Systems

Recommender System (RS) is an important online application that affects billions of users every day. The mainstream RS ranking framework is composed of two parts: a Multi-Task Learning model (MTL) that predicts various user feedback, i.e., clicks, likes, sharings, and a Multi-Task Fusion model (MTF) that combines the multi-task outputs into one final ranking score with respect to user satisfaction. There has not been much research on the fusion model while it has great impact on the final recommendation as the last crucial process of the ranking. To optimize long-term user satisfaction rather than obtain instant returns greedily, we formulate MTF task as Markov Decision Process (MDP) within a recommendation session and propose a Batch Reinforcement Learning (RL) based Multi-Task Fusion framework (BatchRL-MTF) that includes a Batch RL framework and an online exploration. The former exploits Batch RL to learn an optimal recommendation policy from the fixed batch data offline for long-term user satisfaction, while the latter explores potential high-value actions online to break through the local optimal dilemma. With a comprehensive investigation on user behaviors, we model the user satisfaction reward with subtle heuristics from two aspects of user stickiness and user activeness. Finally, we conduct extensive experiments on a billion-sample level real-world dataset to show the effectiveness of our model. We propose a conservative offline policy estimator (Conservative-OPEstimator) to test our model offline. Furthermore, we take online experiments in a real recommendation environment to compare performance of different models. As one of few Batch RL researches applied in MTF task successfully, our model has also been deployed on a large-scale industrial short video platform, serving hundreds of millions of users.

cs.IR↗