arXiv subjects

Qikun Xue

Publications and source records attributed to Qikun Xue.

At least 19 recordsLinked to original sources

arXiv2026

Preparation and optimization of high-temperature superconducting Ruddlesden-Popper nickelate thin films

The discovery of ambient-pressure nickelate high-temperature superconductivity provides a new platform for probing the underlying superconducting mechanisms. However, the thermodynamic metastability of Ruddlesden-Popper nickelates Lnn+1NinO3n+1 (Ln = lanthanide) presents significant challenges in achieving precise control over their structure and oxygen stoichiometry. This study establishes a systematic approach for growing phase-pure, high-quality Ln3Ni2O7 thin films on LaAlO3 and SrLaAlO4 substrates using gigantic-oxidative atomic-layer-by-layer epitaxy. The films grown under an ultrastrong oxidizing ozone atmosphere are superconducting without further post annealing. Specifically, the optimal Ln3Ni2O7/SrLaAlO4 superconducting film exhibits an onset transition temperature (Tc,onset) of 50 K. Four critical factors governing the crystalline quality and superconducting properties of Ln3Ni2O7 films are identified: 1) precise cation stoichiometric control suppresses secondary phase formation; 2) complete atomic layer-by-layer coverage coupled with 3) optimized interface reconstruction minimizes stacking faults; 4) accurate oxygen content regulation is essential for achieving a single superconducting transition and high Tc,onset. These findings provide valuable insights for the layer-by-layer epitaxy growth of diverse oxide high-temperature superconducting films.

cond-mat.supr-con↗

arXiv2025

Field re-entrant superconductivity in Eu-doped infinite-layer nickelates

Intertwined superconducting and magnetic orders may give rise to exotic quantum phases, including field-induced and re-entrant superconductivity. However, such magnetism-enhanced superconductivity has remained elusive in superconductors with higher transition temperatures. While infinite-layer nickelates represent a new class of unconventional superconductors, the impact of rare-earth magnetism on superconducting properties remains largely unexplored. Here, we show that Eu-doped infinite-layer nickelate Sm$_{0.95-x}$Ca$_{0.05}$Eu$_x$NiO$_2$ exhibits a magnetic-field-induced re-entrant superconducting phase in the Eu-rich over-doped regime. Zero-resistance transport and high-field diamagnetic screening confirm the superconducting nature of this phase, which emerges after the initial suppression of low-field superconductivity and remains robust across a broad range of temperatures, fields and field orientations. In the same doping range, we observe nonlinear Hall transport and hysteretic magnetoresistance, indicating the unconventional nature of the re-entrant behaviour. While partially consistent with a compensation mechanism between the Eu-derived exchange field and the applied field, our data reveal pronounced deviations from this model at the highest-doping levels. Our findings establish infinite-layer nickelates as a fertile platform for exploring magnetically driven high-field superconductivity in strongly correlated oxides.

cond-mat.supr-con↗

arXiv2023

Chiral charge density wave and backscattering-immune orbital texture in monolayer 1T-TiTe2

Non-trivial electronic states are attracting intense attention in low-dimensional physics. Though chirality has been identified in charge states with a scalar order parameter, its intertwining with charge density waves (CDW), film thickness and the impact on the electronic behaviors remain less well understood. Here, using scanning tunneling microscopy, we report a 2 x 2 chiral CDW as well as a strong suppression of the Te-5p hole-band backscattering in monolayer 1T-TiTe2. These exotic characters vanish in bilayer TiTe2 with a non-CDW state. Theoretical calculations approve that chirality comes from a helical stacking of the triple-q CDW components and therefore can persist at the two-dimensional limit. Furthermore, the chirality renders the Te-5p bands an unconventional orbital texture that prohibits electron backscattering. Our study establishes TiTe2 as a promising playground for manipulating the chiral ground states at the monolayer limit and provides a novel path to engineer electronic properties from an orbital degree.

cond-mat.mtrl-sci↗

arXiv2023

Topology hierarchy of transition metal dichalcogenides built from quantum spin Hall layers

The evolution of the physical properties of two-dimensional material from monolayer limit to the bulk reveals unique consequences from dimension confinement and provides a distinct tuning knob for applications. Monolayer 1T'-phase transition metal dichalcogenides (1T'-TMDs) with ubiquitous quantum spin Hall (QSH) states are ideal two-dimensional building blocks of various three-dimensional topological phases. However, the stacking geometry was previously limited to the bulk 1T'-WTe2 type. Here, we introduce the novel 2M-TMDs consisting of translationally stacked 1T'-monolayers as promising material platforms with tunable inverted bandgaps and interlayer coupling. By performing advanced polarization-dependent angle-resolved photoemission spectroscopy as well as first-principles calculations on the electronic structure of 2M-TMDs, we revealed a topology hierarchy: 2M-WSe2, MoS2, and MoSe2 are weak topological insulators (WTIs), whereas 2M-WS2 is a strong topological insulator (STI). Further demonstration of topological phase transitions by tunning interlayer distance indicates that band inversion amplitude and interlayer coupling jointly determine different topological states in 2M-TMDs. We propose that 2M-TMDs are parent compounds of various exotic phases including topological superconductors and promise great application potentials in quantum electronics due to their flexibility in patterning with two-dimensional materials.

cond-mat.mtrl-sci↗

arXiv2022

An Evolutionary Pathway for the Quantum Internet Relying on Secure Classical Repeaters

Until quantum repeaters become mature, quantum networks remain restricted either to limited areas of directly connected nodes or to nodes connected to a common node. We circumvent this limitation by conceiving quantum networks using secure classical repeaters combined with the quantum secure direct communication (QSDC) principle, which is a compelling form of quantum communication that directly transmits information over quantum channel. The final component of this promising solution is our classical quantum-resistant algorithm. Explicitly, in these networks, the ciphertext gleaned from a quantum-resistant algorithm is transmitted using QSDC along the nodes, where it is read out and then transmitted to the next node. At the repeaters, the information is protected by our quantum-resistant algorithm, which is secure even in the face of a quantum computer. Hence, our solution offers secure end-to-end communication across the entire network, since it is capable of both eavesdropping detection and prevention in the emerging quantum internet. It is compatible with operational networks, and will enjoy the compelling services of the popular Internet, including authentication. Hence, it smoothens the transition from the classical Internet to the Quantum Internet (Qinternet) by following a gradual evolutionary upgrade. It will act as an alternative network in quantum computing networks in the future. We have presented the first experimental demonstration of a secure classical repeater based hybrid quantum network constructed by a serial concatenation of an optical fiber and free-space communication link. In conclusion, secure repeater networks may indeed be constructed using existing technology and continue to support a seamless evolutionary pathway to the future Qinternet of quantum computers.

quant-ph↗

arXiv2021

Distinct quantum anomalous Hall ground states induced by magnetic disorders

The quantum anomalous Hall (QAH) effect in magnetic topological insulator (TI) represents a new state of matter originated from the interplay between topology and magnetism. The defining characteristics of the QAH ground state are the quantized Hall resistivity ($ρ_{yx}$) and vanishing longitudinal resistivity ($ρ_{xx}$) in the absence of external magnetic field. A fundamental question concerning the QAH effect is whether it is merely a zero-magnetic-field quantum Hall (QH) effect, or if it can host unique quantum phases and phase transitions that are unavailable elsewhere. The most dramatic departure of the QAH systems from other QH systems lies in the strong magnetic disorders that induce spatially random magnetization. Because disorder and magnetism play pivotal roles in the phase diagram of two-dimensional electron systems, the high degree of magnetic disorders in QAH systems may create novel phases and quantum critical phenomena. In this work, we perform systematic transport studies of a series of magnetic TIs with varied strength of magnetic disorders. We find that the ground state of QAH effect can be categorized into two distinct classes: the QAH insulator and anomalous Hall (AH) insulator phases, as the zero-magnetic-field counterparts of the QH liquid and Hall insulator in the QH systems. In the low disorder limit of the QAH insulator regime, we observe a universal quantized longitudinal resistance $ρ_{xx} = h/e^{2}$ at the coercive field. In the AH insulator regime, we find that a magnetic field can drive it to the QAH insulator phase through a quantum critical point with distinct scaling behaviors from that in the QH phase transition. We propose that the transmission between chiral edge states at domain boundaries, tunable by disorder and magnetic fields, is the key for determining the QAH ground state.

cond-mat.mes-hall↗

arXiv2020

Type-II Ising superconductivity and anomalous metallic state in macro-size ambient-stable ultrathin crystalline films

Recent emergence of two-dimensional (2D) crystalline superconductors has provided a promising platform to investigate novel quantum physics and potential applications. To reveal essential quantum phenomena therein, ultralow temperature transport investigation on high quality ultrathin superconducting films is critically required, although it has been quite challenging experimentally. Here we report a systematic transport study on the ultrathin crystalline PdTe2 films grown by molecular beam epitaxy (MBE). Interestingly, a new type of Ising superconductivity in 2D centrosymmetric materials is revealed by the detection of large in-plane critical field more than 7 times Pauli limit. Remarkably, in perpendicular magnetic field, we provide solid evidence of anomalous metallic state characterized by the resistance saturation at low temperatures with high quality filters. The robust superconductivity with intriguing quantum phenomena in the macro-size ambient-stable ultrathin PdTe2 films remains almost the same for 20 months, showing great potentials in electronic and spintronic applications.

cond-mat.supr-con↗

arXiv2018

Coexistence of Intrinsic Superconductivity and Topological Insulator State in Monoclinic Phase WS2

Recently, intriguing phenomena of superconductivity, type-II Weyl semimetal or quantum spin Hall states were discovered in metastable 1T'-type VIB-group transition metal dichalcogenides (TMDs). Here, we report that monoclinic phase WS2 was discovered and synthesized in our experiments. The intrinsic superconducting transition was observed in monoclinic WS2 with a transition temperature Tc of 8.8 K which is the highest among previously reported TMDs without any fine-tuning process. Intersteing, topological insulator state, defined by topological invariant Z2, was also discovered with a single Dirac cone on the surface, which is different from all topological states reported in TMDs. Further, the electronic structure was found to have a strong anisotropy by Shubnikov-de Haas oscillations and first-principles calculations. Our findings reveal that monoclinic WS2 might be a new topological superconductivity candidate with a strong anisotropy.

cond-mat.supr-con↗

arXiv2016

The Role of SrTiO3 Phonon Penetrating into thin FeSe Films in the Enhancement of Superconductivity

The significant role of interfacial coupling on the superconductivity enhancement in FeSe films on SrTiO3 has been widely recognized. But the explicit origination of this coupling is yet to be identified. Here by surface phonon measurements using high resolution electron energy loss spectroscopy, we found electric field generated by Fuchs-Kliewer (F-K) phonon modes of SrTiO3 can penetrate into FeSe films and strongly interact with electrons therein. The mode-specific electron-phonon coupling (EPC) constant for the ~92 meV F-K phonon is ~0.25 in the single-layer FeSe on SrTiO3. With increasing FeSe thickness, the penetrating field intensity decays exponentially, which matches well the observed exponential decay of the superconducting gap. It is unambiguously shown that the SrTiO3 F-K phonon penetrating into FeSe is essential in the interfacial superconductivity enhancement.

cond-mat.supr-con↗

arXiv2016

Interference Evidence for Rashba-Type Spin-Split on Semimetallic WTe2 Surface

Semimetallic tungsten ditelluride (WTe2) displays an extremely large non-saturating magnetoresistance (XMR), which is the subject of intense interest. This phenomenon is thought to arise from the combination of perfect n-p charge compensation with low carrier densities in WTe2 and presumably details of its band structure. Recently, "spin texture" induced by strong spin-orbital coupling (SOC) has been observed in WTe2 by angle-resolved photoemission spectroscopy (ARPES). This provides a mechanism for protecting backscattering for the states involved and thus was proposed to play an important role in the XMR of WTe2. Here, based on our density functional calculations for bulk WTe2, we found a strong Rashba spin-orbit effect in the calculated band structure due to its non-centrosymmetric structure. This splits bands and two-fold spin degeneracy of bands is lifted. A prominent Umklapp interference pattern (a spectroscopic feature with involving reciprocal lattice vectors) can be observed by scanning tunneling microscopic (STM) measurements on WTe2 surface at 4.2 K. This differs distinctly from the surface atomic structure demonstrated at 77 K. The energy dependence of Umklapp interference shows a strong correspondence with densities of states integrated from ARPES measurement, manifesting a fact that the bands are spin-split on the opposites side of Gamma point. Spectroscopic survey reveals the ratio of electron/hole asymmetry changes alternately with lateral locations along b axis, providing a microscopic picture for double-carrier transport of semimetallic WTe2. The calculated band structure and Fermi surface is further supported by our ARPES results and Shubnikov-de Haas (SdH) oscillations measurements.

cond-mat.mtrl-sci↗

arXiv2014

Electrically tuned magnetic order and magnetoresistance in a topological insulator

The Dirac-like surface states of the topological insulators (TIs) are protected by time reversal symmetry (TRS) and exhibit a host of novel properties. Introducing magnetism into TI, which breaks the TRS, is expected to create exotic topological magnetoelectric effects. A particularly intriguing phenomenon in this case is the magnetic field dependence of electrical resistance, or magnetoresistance (MR). The intricate interplay between topological protection and broken-TRS may lead to highly unconventional MR behaviour that can find unique applications in magnetic sensing and data storage. However, so far the MR of TI with spontaneously broken TRS is still poorly understood, mainly due to the lack of well-controlled experiments. In this work, we investigate the magneto transport properties of a ferromagnetic TI thin film fabricated into a field effect transistor device. We observe an unusually complex evolution of MR when the Fermi level (EF) is tuned across the Dirac point (DP) by gate voltage. In particular, MR tends to be positive when EF lies close to the DP but becomes negative at higher energies. This trend is opposite to that expected from the Berry phase picture for localization, but is intimately correlated with the gate-tuned magnetic order. We show that the underlying physics is the competition between the topology-induced weak antilocalization and magnetism-induced negative MR. The simultaneous electrical control of magnetic order and magneto transport facilitates future TI-based spintronic devices.

cond-mat.mtrl-sci↗

arXiv2014

Quantum and Classical Magnetoresistance in Ambipolar Topological Insulator Transistors with Gate-tunable Bulk and Surface Conduction

Weak antilocalization (WAL) and linear magnetoresistance (LMR) are two most commonly observed magnetoresistance (MR) phenomena in topological insulators (TIs) and often attributed to the Dirac topological surface states (TSS). However, ambiguities exist because these phenomena could also come from bulk states (often carrying significant conduction in many TIs) and are observable even in non-TI materials. Here, we demonstrate back-gated ambipolar TI field-effect transistors in (Bi0.04Sb0.96)2Te3 thin films grown by molecular beam epitaxy on SrTiO3(111), exhibiting a large carrier density tunability (by nearly 2 orders of magnitude) and a metal-insulator transition in the bulk (allowing effectively switching off the bulk conduction). Tuning the Fermi level from bulk band to TSS strongly enhances both the WAL (increasing the number of quantum coherent channels from one to peak around two) and LMR (increasing its slope by up to 10 times). The SS-enhanced LMR is accompanied by a strongly nonlinear Hall effect, suggesting important roles of charge inhomogeneity (and a related classical LMR), although existing models of LMR cannot capture all aspects of our data. Our systematic gate and temperature dependent magnetotransport studies provide deeper insights into the nature of both MR phenomena and reveal differences between bulk and TSS transport in TI related materials.

cond-mat.mes-hall↗

arXiv2014

Dichotomy of Electronic Structure and Superconductivity between Single-Layer and Double-Layer FeSe/SrTiO3 Films

The latest discovery of possible high temperature superconductivity in the single-layer FeSe film grown on a SrTiO3 substrate, together with the observation of its unique electronic structure and nodeless superconducting gap, has generated much attention. Initial work also found that, while the single-layer FeSe/SrTiO3 film exhibits a clear signature of superconductivity, the double-layer FeSe/SrTiO3 film shows an insulating behavior. Such a dramatic difference between the single-layer and double-layer FeSe/SrTiO3 films is surprising and the underlying origin remains unclear. Here we report our comparative study between the single-layer and double-layer FeSe/SrTiO3 films by performing a systematic angle-resolved photoemission study on the samples annealed in vacuum. We find that, like the single-layer FeSe/SrTiO3 film, the as-prepared double-layer FeSe/SrTiO3 film is insulating and possibly magnetic, thus establishing a universal existence of the magnetic phase in the FeSe/SrTiO3 films. In particular, the double-layer FeSe/SrTiO3 film shows a quite different doping behavior from the single-layer film in that it is hard to get doped and remains in the insulating state under an extensive annealing condition. The difference originates from the much reduced doping efficiency in the bottom FeSe layer of the double-layer FeSe/SrTiO3 film from the FeSe-SrTiO3 interface. These observations provide key insights in understanding the origin of superconductivity and the doping mechanism in the FeSe/SrTiO3 films. The property disparity between the single-layer and double-layer FeSe/SrTiO3 films may facilitate to fabricate electronic devices by making superconducting and insulating components on the same substrate under the same condition.

cond-mat.supr-con↗

arXiv2014

Electronic Evidence of an Insulator-Superconductor Transition in Single-Layer FeSe/SrTiO3 Films

In high temperature cuprate superconductors, it is now generally agreed that the parent compound is a Mott insulator and superconductivity is realized by doping the antiferromagnetic Mott insulator. In the iron-based superconductors, however, the parent compound is mostly antiferromagnetic metal, raising a debate on whether an appropriate starting point should go with an itinerant picture or a localized picture. It has been proposed theoretically that the parent compound of the iron-based superconductors may be on the verge of a Mott insulator, but so far no clear experimental evidence of doping-induced Mott transition has been available. Here we report an electronic evidence of an insulator-superconductor transition observed in the single-layer FeSe films grown on the SrTiO3 substrate. By taking angle-resolved photoemission measurements on the electronic structure and energy gap, we have identified a clear evolution of an insulator to a superconductor with the increasing doping. This observation represents the first example of an insulator-superconductor transition via doping observed in the iron-based superconductors. It indicates that the parent compound of the iron-based superconductors is in proximity of a Mott insulator and strong electron correlation should be considered in describing the iron-based superconductors.

cond-mat.supr-con↗

arXiv2012

Phase Diagram and High Temperature Superconductivity at 65 K in Tuning Carrier Concentration of Single-Layer FeSe Films

Superconductivity in the cuprate superconductors and the Fe-based superconductors is realized by doping the parent compound with charge carriers, or by application of high pressure, to suppress the antiferromagnetic state. Such a rich phase diagram is important in understanding superconductivity mechanism and other physics in the Cu- and Fe-based high temperature superconductors. In this paper, we report a phase diagram in the single-layer FeSe films grown on SrTiO3 substrate by an annealing procedure to tune the charge carrier concentration over a wide range. A dramatic change of the band structure and Fermi surface is observed, with two distinct phases identified that are competing during the annealing process. Superconductivity with a record high transition temperature (Tc) at ~65 K is realized by optimizing the annealing process. The wide tunability of the system across different phases, and its high-Tc, make the single-layer FeSe film ideal not only to investigate the superconductivity physics and mechanism, but also to study novel quantum phenomena and for potential applications.

cond-mat.supr-con↗

arXiv2012

Electronic Origin of High Temperature Superconductivity in Single-Layer FeSe Superconductor

The latest discovery of high temperature superconductivity signature in single-layer FeSe is significant because it is possible to break the superconducting critical temperature ceiling (maximum Tc~55 K) that has been stagnant since the discovery of Fe-based superconductivity in 2008. It also blows the superconductivity community by surprise because such a high Tc is unexpected in FeSe system with the bulk FeSe exhibiting a Tc at only 8 K at ambient pressure which can be enhanced to 38 K under high pressure. The Tc is still unusually high even considering the newly-discovered intercalated FeSe system A_xFe_{2-y}Se_2 (A=K, Cs, Rb and Tl) with a Tc at 32 K at ambient pressure and possible Tc near 48 K under high pressure. Particularly interesting is that such a high temperature superconductivity occurs in a single-layer FeSe system that is considered as a key building block of the Fe-based superconductors. Understanding the origin of high temperature superconductivity in such a strictly two-dimensional FeSe system is crucial to understanding the superconductivity mechanism in Fe-based superconductors in particular, and providing key insights on how to achieve high temperature superconductivity in general. Here we report distinct electronic structure associated with the single-layer FeSe superconductor. Its Fermi surface topology is different from other Fe-based superconductors; it consists only of electron pockets near the zone corner without indication of any Fermi surface around the zone center. Our observation of large and nearly isotropic superconducting gap in this strictly two-dimensional system rules out existence of node in the superconducting gap. These results have provided an unambiguous case that such a unique electronic structure is favorable for realizing high temperature superconductivity.

cond-mat.supr-con↗

arXiv2010

Quantum size effect on the dissociation of O2 molecules on ultrathin Pb(111) films

Using first-principles calculations, we systematically study the dissociation of O$_2$ molecules on different ultrathin Pb(111) films. Based on our previous work revealing the molecular adsorption precursor states for O$_2$, we further explore that why there are two nearly degenerate adsorption states on Pb(111) ultrathin films, but no precursor adsorption states exist at all on the Mg(0001) and Al(111) surfaces. And the reason is concluded to be the different surface electronic structures. For the O$_2$ dissociation, we consider both the reaction channels from gas-like and molecularly adsorbed O$_2$ molecules. We find that the energy barrier for O$_2$ dissociation from the molecular adsorption precursor states is always smaller than from O$_2$ gases. The most energetically favorable dissociation process is found to be the same on different Pb(111) films, and the energy barriers are found to be modulated by the quantum size effects of Pb(111) films.

cond-mat.mtrl-sci↗

arXiv2007

Self-Retracting Motion of Graphite Microflakes

We report the observation of a novel phenomenon, the self-retracting motion of graphite, in which tiny flakes of graphite, after being displaced to various suspended positions from islands of highly orientated pyrolytic graphite, retract back onto the islands under no external influences. Our repeated probing and observing such flakes of various sizes indicate the existence of a critical size of flakes, approximately 35 micrometer, above which the self-retracting motion does not occur under the operation. This helps to explain the fact that the self-retracting motion of graphite has not been reported, because samples of natural graphite are typical larger than this critical size. In fact, reports of this phenomenon have not been found in the literature for single crystals of any kinds. A model that includes the static and dynamic shear strengths, the van der Waals interaction force, and the edge dangling bond interaction effect, was used to explain the observed phenomenon. These findings may conduce to create nano-electromechanical systems with a wide range of mechanical operating frequency from mega to giga hertzs.

cond-mat.mtrl-sci↗