arXiv subjects

Qiliang Li

Publications and source records attributed to Qiliang Li.

8 recordsLinked to original sources

arXiv2025

New Wide Locally Recoverable Codes with Unified Locality

Wide Locally Recoverable Codes (LRCs) have recently been proposed as a solution for achieving high reliability, good performance, and ultra-low storage cost in distributed storage systems. However, existing wide LRCs struggle to balance optimal fault tolerance and high availability during frequent system events. By analyzing the existing LRCs, we reveal three limitations in the LRC construction which lay behind the non-optimal overall performance from multiple perspectives, including non-minimum local recovery cost, non cluster-topology-aware data distribution, and non XOR-based local coding. Thanks to the flexible design space offered by the locality property of wide LRCs, we present UniLRC, which unifies locality considerations in code construction. UniLRC achieves the optimal fault tolerance while overcoming the revealed limitations. We implement UniLRC prototype and conduct comprehensive theoretical and system evaluations, showing significant improvements in reliability and performance over existing wide LRCs deployed in Google and Azure clusters.

cs.DC↗

arXiv2020

Explorative gradient method for active drag reduction of the fluidic pinball and slanted Ahmed body

We address a challenge of active flow control: the optimization of many actuation parameters guaranteeing fast convergence and avoiding suboptimal local minima. This challenge is addressed by a new optimizer, called explorative gradient method (EGM). EGM alternatively performs one exploitive downhill simplex step and an explorative Latin hypercube sampling iteration. Thus, the convergence rate of a gradient based method is guaranteed while, at the same time, better minima are explored. For an analytical multi-modal test function, EGM is shown to significantly outperform the downhill simplex method, the random restart variant, Latin hypercube sampling, Monte Carlo iterations and the genetic algorithm. EGM is applied to minimize the net drag power of the two-dimensional fluidic pinball benchmark with three cylinder rotations as actuation parameters. The net drag power is reduced by $40\%$ employing direct numerical simulations at a Reynolds number of $100$ based on the cylinder diameter. This optimal actuation leads to $98\%$ drag reduction employing Coanda forcing for boat tailing and partial stabilization of vortex shedding. The price is an actuation energy corresponding to $58\%$ of the unforced parasitic drag power. EGM is also used to minimize drag of the $35^\circ$ slanted Ahmed body employing distributed steady blowing with 10 inputs. $17\%$ drag reduction are achieved using Reynolds-Averaged Navier-Stokes simulations (RANS) at the Reynolds number $Re_H=1.9 \times 10^5$ based on the height of the Ahmed body. The optimal actuation emulates boat tailing by inward-directed blowing with velocities which are comparable to the oncoming velocity. We expect that EGM will be employed as efficient optimizer in many future active flow control plants.

physics.flu-dyn↗

arXiv2019

Spin-resolved Visible Optical Spectra and Electronic Characteristics of Defect-mediated Hexagonal Boron Nitride Monolayer

The defect-mediated hexagonal boron nitride (hBN) supercell display the visible optical spectra and electronic characteristics. The defects in the hBN supercell include the atomic vacancy, antisite, antisite vacancy, and substitution of a foreign atom for boron or nitrogen. The hBN supercell with VB, CB, and NB-VN has the high electron density of states across the Fermi level which indicates the high conductive electronic characteristics. The hBN with defects including atomic vacancy, antisite vacancy, and substitution of a foreign atom for boron or nitride exhibit the distinct spin-resolved optical and electronics characteristics, while the defects of boron and nitrogen antisite do not display the spin-resolved optical characteristics. The hBN with positively charged defects has a dominant optical and electronic characteristics at the longer spectral region.

cond-mat.mtrl-sci↗

arXiv2018

New Families of Large Band Gap 2D Topological Insulators in Ethynyl-Derivative Functionalized Compounds

The search for large band gap systems with dissipationless edge states is essential to developing materials that function under a wide range of temperatures. Two-dimensional (2D) topological insulators (TIs) have recently attracted significant attention due to their dissipationless transport, robust properties and excellent compatibility with device integration. However, a major barrier of 2D TIs is their small bulk band gap, which allows for applications only in extremely low temperatures. In this work, first principle calculations were used to analyze the geometric, electronic, and topological properties of PbC2X and BiC2X (X = H, Cl, F, Br, I) compounds. The band gap values are remarkably large, ranging from 0.79eV to 0.99eV. The nanoribbons of these compounds exhibited nontrivial topological order in the simulation, thus proving ethynyl-derivative functionalized Pb and Bi films to be new classes of giant band gap 2D TIs. In addition, these findings indicate that chemical functionalization with ethynyl-derivatives is an effective method to tune the band gap and preserve the nontrivial topological order. These novel materials that are applicable at both room temperature and high temperatures open the door to a new generation of electronics.

cond-mat.mes-hall↗

arXiv2016

Strain effect engineered in α-Al2O3/monolayer MoS2 interface by first principle calculations

With the advances in low dimensional transition metal dichalcolgenides (TMDCs) based metal oxide semiconductor field effect transistor (MOSFET), the interface between semiconductors and dielectrics has received considerable attention due to its dramatic effects on the morphology and charge transport of semiconductors. In this study, first principle calculations were utilized to investigate the strain effect induced by the interface between Al2O3 (0001) and monolayer MoS2. The results indicate that Al2O3 in 1.3nm thickness can apply the strain of 0.3% on MoS2 monolayer. The strain effect monotonically increases with the larger thickness of the dielectric layer. Also, the study on temperature effect indicates the monotonic lattice expansion induced by the higher temperature. Our study proposes that the dielectric engineering can be an effective tool for strain effect in the nanotechnology.

physics.comp-ph↗

arXiv2016

Dirac Fermions induced in strained zigzag phosphorus nanotubes and the applications in field effect transistors

In this work, Dirac fermions have been obtained and engineered in one-dimensional (1D) zigzag phosphorus nanotubes (ZPNTs). We have performed a comprehensive first-principle computational study of the electronic properties of ZPNTs with various diameters. The results indicate that as the lattice parameter (Lc) along axial direction increases, ZPNTs undergo transitions from metal to semimetal and semimetal to semiconductor, whereas Dirac fermions appear at Lc ranging from 3.90Å to 4.10Å. In particular, a field effect transistor (FET) based on a 12-ZPNT (with 12 unit cells in transverse direction) exhibits semiconductor behaviors with efficient gate-effect modulation at Lc= 4.60Å. However, only weak gate modulation is demonstrated when the nanotube becomes semimetal at Lc= 4.10Å. This study indicates that ZPNTs are profoundly appealing in applications in the strain sensors. Our findings pave the way for development of high-performance strain-engineered electronics based on Dirac Fermions in 1D materials.

cond-mat.mes-hall↗

arXiv2015

MoS2 Nanoribbons Thermoelectric Generators

In this work, we have designed and simulated new thermoelectric generator based on monolayer and few-layer MoS2 nanoribbons. The proposed thermoelectric generator is composed of thermocouples made of both n-type and p-type MoS2 nanoribbon legs. Density Functional Tight-Binding Non-Equilibrium Green's Function (DFTB-NEGF) method has been used to calculate the transmission spectrum of MoS2 armchair and zigzag nanoribbons. Phonon transmission spectrum are calculated based on parameterization of Stillinger-Weber potential. Thermoelectric figure of merit, ZT, is calculated using these electronic and phonon transmission spectrum. Monolayer and bilayer MoS2 armchair nanoribbons are found to have the highest ZT value for p-type and n-type legs, repectively. Moreover, we have compared the thermoelectric current of doped monolayer MoS2 armchair nanoribbons and SZi thin films. Results indicate that thermoelectric current of MoS2 monolayer nanoribbons is several orders of magnitude higher than that of Si thin films.

cond-mat.mes-hall↗

arXiv2012

UV/Ozone treatment to reduce metal-graphene contact resistance

We report reduced contact resistance of single-layer graphene devices by using ultraviolet ozone (UVO) treatment to modify the metal/graphene contact interface. The devices were fabricated from mechanically transferred, chemical vapor deposition (CVD) grown, single layer graphene. UVO treatment of graphene in the contact regions as defined by photolithography and prior to metal deposition was found to reduce interface contamination originating from incomplete removal of poly(methyl methacrylate) (PMMA) and photoresist. Our control experiment shows that exposure times up to 10 minutes did not introduce significant disorder in the graphene as characterized by Raman spectroscopy. By using the described approach, contact resistance of less than 200 Ω μm was achieved, while not significantly altering the electrical properties of the graphene channel region of devices.

cond-mat.mtrl-sci↗