arXiv subjects

Qingan Cai

Publications and source records attributed to Qingan Cai.

4 recordsLinked to original sources

arXiv2023

Thermal Conductivity of BAs under Pressure

The thermal conductivity of boron arsenide (BAs) is believed to be influenced by phonon scattering selection rules due to its special phonon dispersion. Compression of BAs leads to significant changes in phonon dispersion, which allows for a test of first principles theories for how phonon dispersion affects three- and four-phonon scattering rates. This study reports the thermal conductivity of BAs from 0 to 30 GPa. Thermal conductivity vs. pressure of BAs is measured by time-domain thermoreflectance with a diamond anvil cell. In stark contrast to what is typical for nonmetallic crystals, BAs is observed to have a pressure independent thermal conductivity below 30 GPa. The thermal conductivity of nonmetallic crystals typically increases upon compression. The unusual pressure independence of thermal conductivity of BAs shows the important relationship between phonon dispersion properties and three- and four-phonon scattering rates.

cond-mat.mtrl-sci↗

arXiv2021

Direct Observation of Chiral Phonons by Inelastic X-ray Scattering

Phonon chirality has attracted intensive attention since it breaks the traditional cognition that phonons are linear propagating bosons. This new quasiparticle property has been extensively studied theoretically and experimentally. However, characterization of the phonon chirality throughout the full Brillouin zone is still not possible due to the lack of available experimental tools. In this work, phonon dispersion and chirality of tungsten carbide were investigated by millielectronvolt energy-resolution inelastic X-ray scattering. The atomistic calculation indicates that in-plane longitudinal and transverse acoustic phonons near K and K$^\prime$ points are circularly polarized due to the broken inversion symmetry. Anomalous inelastic X-ray scattering by these circularly polarized phonons was observed and attributed to their chirality. Our results show that inelastic X-ray scattering can be utilized to characterize phonon chirality in materials and suggest that a revision to the phonon scattering function is necessary.

cond-mat.mtrl-sci↗

arXiv2021

Giant Anisotropic in-Plane Thermal Conduction Induced by Anomalous Phonons in Nearly-Equilaterally Structured PdSe2

In two-dimensional materials, structure difference induces the difference in phonon dispersions, leading to the anisotropy of in-plane thermal transport. Here, we report an exceptional case in layered PdSe2, where the bonding, force constants, and lattice constants are nearly-equal along the in-plane crystallographic axis directions. The phonon dispersions show significant differences between the Gamma-X and Gamma-Y directions, leading to the anisotropy of in-plane thermal conductivity with a ratio up to 1.8. Such anisotropy is not only unexpected in equilaterally structured (in-plane) materials but also comparable to the record in the non-equilaterally structured material reported to date. By combining inelastic X-ray scattering and first-principles calculations, we attribute such anisotropy to the low-energy phonons along Gamma-X, in particular, their lower group velocities and "avoided-crossing" behavior. The different bucking structures between a- (zigzag-type) and b-axis (flat-type) are mainly responsible for the unique phonon dynamics properties of PdSe2. The present results illustrate the unusual thermal conduction mechanism of the equilaterally structured materials and provide valuable insights on thermal management in electronic devices.

cond-mat.mtrl-sci↗

arXiv2021

Matryoshka Phonon Twinning in alpha-GaN

Understanding lattice dynamics is crucial for effective thermal management in high-power electronic devices because phonons dominate thermal transport in most semiconductors. This study utilizes complementary inelastic X-ray and neutron scattering techniques and reports the temperature-dependent phonon dynamics of alpha-GaN, one of the most important third-generation power semiconductors. A prominent Matryoshka phonon dispersion is discovered with the scattering tools and confirmed by the first-principles calculations. Such Matryoshka twinning throughout the three-dimension reciprocal space is demonstrated to amplify the anharmonicity of the related phonon modes through creating abundant three-phonon scattering channels and cutting the phonon lifetime of affected modes by more than 50%. Such phonon topology effectively contributes to the reduction of the in-plane thermal transport, thus the anisotropic thermal conductivity of alpha-GaN. The results not only have significant implications for engineering the thermal performance and other phonon-related properties of alpha-GaN, but also offer valuable insights on the role of anomalous phonon topology in thermal transport of other technically important semiconductors.

cond-mat.mtrl-sci↗