SearcharxivSearch

arXiv subjects

Qingyan Wang

Publications and source records attributed to Qingyan Wang.

At least 19 recordsLinked to original sources

Electronic Nature of Charge Density Wave and Electron-Phonon Coupling in Kagome Superconductor KV$_3$Sb$_5$

The Kagome superconductors AV3Sb5 (A=K, Rb, Cs) have received enormous attention due to their nontrivial topological electronic structure, anomalous physical properties and superconductivity. Unconventional charge density wave (CDW) has been detected in AV3Sb5. High-precision electronic structure determination is essential to understand its origin. Here we unveil electronic nature of the CDW phase in our high-resolution angle-resolved photoemission measurements on KV3Sb5. We have observed CDW-induced Fermi surface reconstruction and the associated band folding. The CDW-induced band splitting and the associated gap opening have been revealed at the boundary of the pristine and reconstructed Brillouin zones. The Fermi surface- and momentum-dependent CDW gap is measured and the strongly anisotropic CDW gap is observed for all the V-derived Fermi surface. In particular, we have observed signatures of the electron-phonon coupling in KV3Sb5. These results provide key insights in understanding the nature of the CDW state and its interplay with superconductivity in AV3Sb5 superconductors.

cond-mat.supr-con

Unusual Electronic Structure of Dirac Material BaMnSb$_2$ Revealed by Angle-Resolved Photoemission Spectroscopy

High resolution angle resolved photoemission measurements and band structure calculations are carried out to study the electronic structure of BaMnSb$_2$. All the observed bands are nearly linear that extend to a wide energy range. The measured Fermi surface mainly consists of one hole pocket around $Γ$ and a strong spot at Y which are formed from the crossing points of the linear bands. The measured electronic structure of BaMnSb$_2$ is unusual and deviates strongly from the band structure calculations. These results will stimulate further efforts to theoretically understand the electronic structure of BaMnSb$_2$ and search for novel properties in this Dirac material.

cond-mat.mtrl-sci

Electronic Structure Examination on the Topological Properties of CaMnSb$_{2}$ by Angle-Resolved Photoemission Spectroscopy

We have carried out detailed high resolution ARPES measurements and band structure calculations to study the electronic structure of CaMnSb$_{2}$. The observed Fermi surface mainly consists of one hole pocket around $Γ$ point and one tiny hole pocket at Y point. Strong spectral weight accumulation along the $Γ$-X direction is observed on the hole-like Fermi surface around $Γ$ point, suggesting strong anisotropy of the density of states along the Fermi surface. The tiny hole pocket at Y point originates from an anisotropic Dirac-like band with the crossing point of the linear bands lying $\sim$ 10 meV above the Fermi level. These observations are in a good agreement with the band structure calculations. In addition, we observe additional features along the $Γ$-Y line that cannot be accounted for by the band structure calculations. Our results provide important information in understanding and exploration of novel properties in CaMnSb$_{2}$ and related materials.

cond-mat.mtrl-sci

Genuine Electronic Structure and Superconducting Gap Structure in (Ba$_{0.6}$K$_{0.4}$)Fe$_{2}$As$_{2}$ Superconductor

The electronic structure and superconducting gap structure are prerequisites to establish microscopic theories in understanding the superconductivity mechanism of iron-based superconductors. However, even for the most extensively studied optimally-doped (Ba$_{0.6}$K$_{0.4}$)Fe$_2$As$_2$, there remain outstanding controversies on its electronic structure and superconducting gap structure. Here we resolve these issues by carrying out high-resolution angle-resolved photoemission spectroscopy (ARPES) measurements on the optimally-doped (Ba$_{0.6}$K$_{0.4}$)Fe$_2$As$_2$ superconductor using both Helium lamp and laser light sources. Our results indicate the "flat band" feature observed around the Brillouin zone center in the superconducting state originates from the combined effect of the superconductivity-induced band back-bending and the folding of a band from the zone corner to the center. We found direct evidence of the band folding between the zone corner and the center in both the normal and superconducting state. Our resolution of the origin of the flat band makes it possible to assign the three hole-like bands around the zone center and determine their superconducting gap correctly. Around the zone corner, we observe a tiny electron-like band and an M-shaped band simultaneously in both the normal and superconducting states. The obtained gap size for the bands around the zone corner ($\sim$5.5 meV) is significantly smaller than all the previous ARPES measurements. Our results establish a new superconducting gap structure around the zone corner and resolve a number of prominent controversies concerning the electronic structure and superconducting gap structure in the optimally-doped (Ba$_{0.6}$K$_{0.4}$)Fe$_2$As$_2$. They provide new insights in examining and establishing theories in understanding superconductivity mechanism in iron-based superconductors.

cond-mat.supr-con

Origin of the Electronic Structure in Single-Layer FeSe/SrTiO3 Films

The accurate theoretical description of the underlying electronic structures is essential for understanding the superconducting mechanism of iron-based superconductors. Compared to bulk FeSe, the superconducting single-layer FeSe/SrTiO3 films exhibit a distinct electronic structure consisting of only electron Fermi pockets, due to the formation of a new band gap at the Brillouin zone (BZ) corners and an indirect band gap between the BZ center and corners. Although intensive studies have been carried out, the origin of such a distinct electronic structure and its connection to bulk FeSe remain unclear. Here we report a systematic study on the temperature evolution of the electronic structure in single-layer FeSe/SrTiO3 films by angle-resolved photoemission spectroscopy. A temperature-induced electronic phase transition was clearly observed at 200 K, above which the electronic structure of single-layer FeSe/SrTiO3 films restored to that of bulk FeSe, characterized by the closing of the new band gap and the vanishing of the indirect band gap. Moreover, the interfacial charge transfer effect induced band shift of ~ 60 meV was determined for the first time. These observations not only show the first direct evidence that the electronic structure of single-layer FeSe/SrTiO3 films originates from bulk FeSe through a combined effect of an electronic phase transition and an interfacial charge transfer, but also provide a quantitative basis for theoretical models in describing the electronic structure and understanding the superconducting mechanism in single-layer FeSe/SrTiO3 films.

cond-mat.supr-con

Spectroscopic Evidence of Superconductivity Pairing at 83 K in Single-Layer FeSe/SrTiO3 Films

Single-layer FeSe films grown on the SrTiO3 substrate (FeSe/STO) have attracted much attention because of their possible record-high superconducting critical temperature Tc and distinct electronic structures in iron-based superconductors. However, it has been under debate on how high its Tc can really reach due to the inconsistency of the results obtained from the transport, magnetic and spectroscopic measurements. Here we report spectroscopic evidence of superconductivity pairing at 83 K in single-layer FeSe/STO films. By preparing high-quality single-layer FeSe/STO films, we observe for the first time strong superconductivity-induced Bogoliubov back-bending bands that extend to rather high binding energy ~100 meV by high-resolution angle-resolved photoemission measurements. The Bogoliubov back-bending band provides a new definitive benchmark of superconductivity pairing that is directly observed up to 83 K in the single-layer FeSe/STO films. Moreover, we find that the superconductivity pairing state can be further divided into two temperature regions of 64-83 K and below 64 K. We propose the 64-83 K region may be attributed to superconductivity fluctuation while the region below 64 K corresponds to the realization of long-range superconducting phase coherence. These results indicate that either Tc as high as 83 K is achievable in iron-based superconductors, or there is a pseudogap formation from superconductivity fluctuation in single-layer FeSe/STO films.

cond-mat.supr-con

Evidence for bosonic mode coupling in electron dynamics of LiFeAs superconductor

Super-high resolution laser-based angle-resolved photoemission measurements are carried out on LiFeAs superconductor to investigate its electron dynamics. Three energy scales at $\sim$20 meV, $\sim$34 meV and $\sim$55 meV are revealed for the first time in the electron self-energy both in the superconducting state and normal state. The $\sim$20 meV and $\sim$34 meV scales can be attributed to the coupling of electrons with sharp bosonic modes which are most likely phonons. These observations provide definitive evidence on the existence of mode coupling in iron-based superconductors.

cond-mat.supr-con

Electronic Evolution from the Parent Mott Insulator to a Superconductor in Lightly Hole-Doped Bi2Sr2CaCu2O8+delta

High temperature superconductivity in cuprates is realized by doping the Mott insulator with charge carriers. A central issue is how such an insulating state can evolve into a conducting or superconducting state when charge carriers are introduced. Here, by in situ vacuum annealing and Rb deposition on the Bi2Sr2Ca0.6Dy0.4Cu2O8+delta (Bi2212) sample surface to push its doping level continuously from deeply underdoped (Tc=25 K, doping level p-0.066) to the near zero doping parent Mott insulator, angle-resolved photoemission spectroscopy measurements are carried out to observe the detailed electronic structure evolution in lightly hole-doped region for the first time. Our results indicate that the chemical potential lies at about 1 eV above the charge transfer band for the parent state at zero doping which is quite close to the upper Hubbard band. With increasing hole doping, the chemical potential moves continuously towards the charge transfer band and the band structure evolution exhibits a rigid band shift-like behavior. When the chemical potential approaches the charge transfer band at a doping level of -0.05, the nodal spectral weight near the Fermi level increases, followed by the emergence of the coherent quasiparticle peak and the insulator-superconductor transition. Our observations provide key insights in understanding the insulator-superconductor transition in doping the parent cuprate compound and for establishing related theories.

cond-mat.supr-con

Simultaneous Generation of Direct- and Indirect-Gap Photoluminescence in Multilayer MoS2 Bubbles

Transition metal dichalcogenide (TMD) materials have received enormous attention due to their extraodinary optical and electrical properties, among which MoS2 is the most typical one. As thickness increases from monolayer to multilayer, the photoluminescence (PL) of MoS2 is gradually quenched due to the direct-to-indirect band gap transition. How to enhance PL response and decrease the layer dependence in multilayer MoS2 is still a challenging task. In this work, we report, for the first time, simultaneous generation of three PL peaks at around 1.3, 1.4 and 1.8 eV on multilayer MoS2 bubbles. The temperature dependent PL measurements indicate that the two peaks at 1.3 and 1.4 eV are phonon-assisted indirect-gap transitions while the peak at 1.8 eV is the direct-gap transition. Using first-principles calculations, the band structure evolution of multilayer MoS2 under strain is studied, from which the origin of the three PL peaks of MoS2 bubbles is further confirmed. Moreover, PL standing waves are observed in MoS2 bubbles that creates Newton-Ring-like patterns. This work demonstrates that the bubble structure may provide new opportunities for engineering the electronic structure and optical properties of layered materials.

cond-mat.mtrl-sci

Direct Measurement of the Electronic Structure and band gap nature of atomic-layer-thick 2H-MoTe2

The millimeter sized monolayer and bilayer 2H-MoTe2 single crystal samples are prepared by a new mechanical exfoliation method. Based on such high-quality samples, we report the first direct electronic structure study on them, using standard high resolution angle-resolved photoemission spectroscopy (ARPES). A direct band gap of 0.924eV is found at K in the rubidium-doped monolayer MoTe2. Similar valence band alignment is also observed in bilayer MoTe2,supporting an assumption of a analogous direct gap semiconductor on it. Our measurements indicate a rather large band splitting of 212meV at the valence band maximum (VBM) in monolayer MoTe2, and the splitting is systematically enlarged with layer stacking, from monolayer to bilayer and to bulk. Meanwhile, our PBE band calculation on these materials show excellent agreement with ARPES results. Some fundamental electronic parameters are derived from the experimental and calculated electronic structures. Our findings lay a foundation for further application-related study on monolayer and bilayer MoTe2.

cond-mat.mtrl-sci

Spectroscopic Evidence of Bilayer Splitting and Interlayer Pairing in an Iron Based Superconductor

In high temperature cuprate superconductors, the interlayer coupling between the CuO$_2$ planes plays an important role in dictating superconductivity, as indicated by the sensitive dependence of the critical temperature (T$_C$) on the number of CuO$_2$ planes in one structural unit. In Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ superconductor with two CuO$_2$ planes in one structural unit, the interaction between the two CuO$_2$ planes gives rise to band splitting into two Fermi surface sheets (bilayer splitting) that have distinct superconducting gap. The iron based superconductors are composed of stacking of the FeAs/FeSe layers; whether the interlayer coupling can cause similar band splitting and its effect on superconductivity remain unclear. Here we report high resolution laser-based angle-resolved photoemission spectroscopy (ARPES) measurements on a newly discovered iron based superconductor, KCa$_2$Fe$_4$As$_4$F$_2$ (T$_C$=33.5\,K) which consists of stacking FeAs blocks with two FeAs layers separated by insulating Ca$_2$F$_2$ blocks. Bilayer splitting effect is observed for the first time that gives rise to totally five hole-like Fermi surface sheets around the Brilliouin zone center. Band structure calculations reproduce the observed bilayer splitting by identifying interlayer interorbital interaction between the two FeAs layers within one FeAs block. All the hole-like pockets around the zone center exhibit Fermi surface-dependent and nodeless superconducting gap. The gap functions with short-range antiferromagetic fluctuations are proposed and the gap symmetry can be well understood when the interlayer pairing is considered. The particularly strong interlayer pairing is observed for one of the bands. Our observations provide key information on the interlayer coupling and interlayer pairing in understanding superconductivity in iron based superconductors.

cond-mat.supr-con

Electronic Structure of Exfoliated Millimeter-Sized Monolayer WSe2 on Silicon Wafer

The monolayer WSe2 is interesting and important for future application in nanoelectronics, spintronics and valleytronics devices, because it has the largest spin splitting and longest valley coherence time among all the known monolayer transition-metal dichalcogenides (TMDs). To obtain the large-area monolayer TMDs' crystal is the first step to manufacture scalable and high-performance electronic devices. In this letter, we have successfully fabricated millimeter-sized monolayer WSe2 single crystals with very high quality, based on our improved mechanical exfoliation method. With such superior samples, using standard high resolution angle-resolved photoemission spectroscopy, we did comprehensive electronic band structure measurements on our monolayer WSe2. The overall band features point it to be a 1.2eV direct band gap semiconductor. Its spin-splitting of the valence band at K point is found as 460 meV, which is 30 meV less than the corresponding band splitting in its bulk counterpart. The effective hole masses of valence bands are determined as 2.344 me at Gamma, and 0.529 me as well as 0.532 me at K for the upper and lower branch of splitting bands, respectively. And screening effect from substrate is shown to substantially impact on the electronic properties. Our results provide important insights into band structure engineering in monolayer TMDs. Our monolayer WSe2 crystals may constitute a valuable device platform.

cond-mat.mes-hall

Evidence for an Additional Symmetry Breaking from Direct Observation of Band Splitting in the Nematic State of FeSe Superconductor

The iron-based superconductor FeSe has attracted much recent attention because of its simple crystal structure, distinct electronic structure and rich physics exhibited by itself and its derivatives. Determination of its intrinsic electronic structure is crucial to understand its physical properties and superconductivity mechanism. Both theoretical and experimental studies so far have provided a picture that FeSe consists of one hole-like Fermi surface around the Brillouin zone center in its nematic state. Here we report direct observation of two hole-like Fermi surface sheets around the Brillouin zone center, and the splitting of the associated bands, in the nematic state of FeSe by taking high resolution laser-based angle-resolved photoemission measurements. These results indicate that, in addition to nematic order and spin-orbit coupling, there is an additional order in FeSe that breaks either inversion or time reversal symmetries. The new Fermi surface topology asks for reexamination of the existing theoretical and experimental understanding of FeSe and stimulates further efforts to identify the origin of the hidden order in its nematic state.

cond-mat.supr-con

Selective Hybridization between Main Band and Superstructure Band in Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ Superconductor

High-resolution laser-based angle-resolved photoemission measurements have been carried out on Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ (Bi2212) and Bi$_2$Sr$_{2-x}$La$_x$CuO$_{6+δ}$ (Bi2201) superconductors. Unexpected hybridization between the main band and the superstructure band in Bi2212 is clearly revealed. In the momentum space where one main Fermi surface intersects with one superstructure Fermi surface, four bands are observed instead of two. The hybridization exists in both superconducting state and normal state, and in Bi2212 samples with different doping levels. Such a hybridization is not observed in Bi2201. This phenomenon can be understood by considering the bilayer splitting in Bi2212, the selective hybridization of two bands with peculiar combinations, and the altered matrix element effects of the hybridized bands. These observations provide strong evidence on the origin of the superstructure band which is intrinsic to the CuO$_2$ planes. Therefore, understanding physical properties and superconductivity mechanism in Bi2212 should consider the complete Fermi surface topology which involves the main bands, the superstructure bands and their interactions.

cond-mat.supr-con

Evolution of Incommensurate Superstructure and Electronic Structure with Pb Substitution in (Bi$_{2-x}$Pb$_{x}$)Sr$_2$CaCu$_2$O$_{8+δ}$ Superconductors

High-quality Bi$_{2-x}$Pb$_{x}$Sr$_2$CaCu$_2$O$_{8+δ}$ (Bi2212) single crystals have been successfully grown by the traveling solvent floating zone technique with a wide range of Pb substitution ($x=0-0.8$). The samples are characterized by transmission electron microscope (TEM) and measured by high resolution laser-based angle-resolved photoemission spectroscopy (ARPES) with different photon energies. A systematic evolution of the electronic structure and superstructure with Pb substitution has been revealed for the first time. The superstructure shows a significant change with Pb substitution and the incommensurate modulation vector ($\textbf{Q}$) decreases with increasing Pb substitution. In the meantime, the superstructure intensity from ARPES measurements also decreases dramatically with increasing Pb concentration. The superstructure in Bi2212 can be effectively suppressed by Pb substitution and it nearly disappears with a Pb substitution of $x=0.8$. We also find that the superstructure bands in ARPES measurements depend sensitively on the photon energy of lasers used; they can become even stronger than the main band when using a laser photon energy of 10.897 eV. These results provide important information on the origin of the incommensurate superstructure and its control and suppression in bismuth-based high temperature superconductors.

cond-mat.supr-con

Identification of a Large Amount of Excess Fe in Superconducting Single-Layer FeSe/SrTiO3 Films

The single-layer FeSe films grown on SrTiO3 (STO) substrates have attracted much attention because of its record high superconducting critical temperature (Tc). It is usually believed that the composition of the epitaxially grown single-layer FeSe/STO films is stoichiometric, i.e., the ratio of Fe and Se is 1:1. Here we report the identification of a large amount of excess Fe in the superconducting single-layer FeSe/STO films. By depositing Se onto the superconducting single-layer FeSe/STO films, we find by in situ scanning tunneling microscopy (STM) the formation of the second-layer FeSe islands on the top of the first layer during the annealing process at a surprisingly low temperature ($\sim$150°C) which is much lower than the usual growth temperature ($\sim$490°C). This observation is used to detect excess Fe and estimate its quantity in the single-layer FeSe/STO films. The amount of excess Fe detected is at least 20% that is surprisingly high for the superconducting single-layer FeSe/STO films. The discovery of such a large amount of excess Fe should be taken into account in understanding the high-Tc superconductivity and points to a likely route to further enhance Tc in the superconducting single-layer FeSe/STO films.

cond-mat.supr-con

Emergence of Superconductivity from Fully Incoherent Normal State in an Iron-Based Superconductor (Ba$_{0.6}$K$_{0.4}$)Fe$_2$As$_2$

In unconventional superconductors, it is generally believed that understanding the physical properties of the normal state is a pre-requisite for understanding the superconductivity mechanism. In conventional superconductors like niobium or lead, the normal state is a Fermi liquid with a well-defined Fermi surface and well-defined quasipartcles along the Fermi surface. Superconductivity is realized in this case by the Fermi surface instability in the superconducting state and the formation and condensation of the electron pairs (Cooper pairing). The high temperature cuprate superconductors, on the other hand, represent another extreme case that superconductivity can be realized in the underdoped region where there is neither well-defined Fermi surface due to the pseudogap formation nor quasiparticles near the antinodal regions in the normal state. Here we report a novel scenario that superconductivity is realized in a system with well-defined Fermi surface but without quasiparticles along the Fermi surface in the normal state. High resolution laser-based angle-resolved photoemission measurements have been performed on an optimally-doped iron-based superconductor (Ba$_{0.6}$K$_{0.4}$)Fe$_2$As$_2$. We find that, while sharp superconducting coherence peaks emerge in the superconducting state on the hole-like Fermi surface sheets, no quasiparticle peak is present in the normal state. Its electronic behaviours deviate strongly from a Fermi liquid system. The superconducting gap of such a system exhibits an unusual temperature dependence that it is nearly a constant in the superconducting state and abruptly closes at T$_c$. These observations have provided a new platform to study unconventional superconductivity in a non-Fermi liquid system.

cond-mat.supr-con

Disappearance of Superconductivity and a Concomitant Lifshitz Transition in Heavily-Overdoped Bi2Sr2CuO6 Superconductor Revealed by Angle-Resolved Photoemission Spectroscopy

By partially doping Pb to effectively suppress the superstructure in single-layered cuprate Bi2Sr2CuO6+δ(Pb-Bi2201) and annealing them in vacuum or in high pressure oxygen atmosphere, a series of high quality Pb-Bi2201 single crystals are obtained with Tc covering from 17 K to non-supercondcuting in the overdoped region. High resolution angle resolved photoemission spectroscopy (ARPES) measurements are carried out on these samples to investigate the evolution of the Fermi surface topology with doping in the normal state. Clear and complete Fermi surface are observed and quantitatively analyzed in all these overdoped Pb-Bi2201 samples. A Lifshitz transition from hole-like Fermi surface to electron like Fermi surface with increasing doping is observed at a doping level of ~0.35. This transition coincides with the change that the sample undergoes from superconducting to non-superconducting states. Our results reveal the emergence of an electron-like Fermi surface and the existence of a Lifshitz transition in heavily overdoped Bi2201 samples. They provide important information in understanding the connection between the disappearance of superconductivity and the Lifshitz transition in the overdoped region.

cond-mat.supr-con