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Qisheng Yu

Publications and source records attributed to Qisheng Yu.

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Multiferroic VHfO$_4$ with Strain-Tunable Magnetism

The coexistence of ferroelectricity and magnetism in a single-phase oxide is rare because the electronic requirements for these two orders are often incompatible. Here, using first-principles calculations and parallel-tempering Monte Carlo simulations, we propose stoichiometric VHfO$_4$ as a hafnia-derived multiferroic that overcomes this constraint through ordered cation design rather than dilute magnetic doping. We found that VHfO$_4$ could stabilize in a polar \(Pca2_1\)-like structure with layered V/Hf ordering, remains dynamically stable, and preserves switchable ferroelectricity with a large spontaneous polarization. The ordered V sublattice introduces competing exchange interactions that favor an antiferromagnetic ground state at zero strain. Epitaxial strain further drives transitions into additional phases, including a noncollinear spiral-like state and a predominantly in-plane antiferromagnetic state. We also find that out-of-plane lattice distortions along the polar axis strongly modify the exchange interactions and magnetic phase stability, indicating a strain-mediated pathway for electric-field control of magnetism. These results establish VHfO$_4$ as a promising platform for exploring multiferroicity and magnetoelectric coupling in hafnia-based oxides.

cond-mat.mtrl-sci

Semiconducting nonperovskite ferroelectric oxynitride designed ab initio

Recent discovery of HfO2-based and nitride-based ferroelectrics that are compatible to the semiconductor manufacturing process have revitalized the field of ferroelectric-based nanoelectronics. Guided by a simple design principle of charge compensation and density functional theory calculations, we discover HfO2-like mixed-anion materials, TaON and NbON, can crystallize in the polar Pca21 phase with a strong thermodynamic driving force to adopt anion ordering spontaneously. Both oxynitrides possess large remnant polarization, low switching barriers, and unconventional negative piezoelectric effect, making them promising piezoelectrics and ferroelectrics. Distinct from HfO2 that has a wide band gap, both TaON and NbON can absorb visible light and have high charge carrier mobilities, suitable for ferroelectric photovoltaic and photocatalytic applications. This new class of multifunctional nonperovskite oxynitride containing economical and environmentally benign elements offer a platform to design and optimize high-performing ferroelectric semiconductors for integrated systems.

cond-mat.mtrl-sci