arXiv subjects

Qishuo Tan

Publications and source records attributed to Qishuo Tan.

10 recordsLinked to original sources

arXiv2026

Nontrivial Boundary-Mediated Superconducting Transport in a TRSB Topological Iron-Based Superconductor

The interplay of superconductivity, band topology, and spontaneous time-reversal-symmetry breaking (TRSB) is expected to enable topological superconducting boundary states. FeTe0.55Se0.45 provides a promising single-material platform because it combines superconductivity, nontrivial band topology, and spontaneous magnetization in the superconducting state. Here we report evidence for a boundary-mediated superconducting transport response in exfoliated Fe(Te,Se) devices. Polar Kerr measurements show that TRSB emerges below TKerr < Tc and coexists with superconductivity across multiple compositions, providing an independent symmetry-breaking scale for transport. Using crystallographically sharp, continuous edges and side-surface-dominant contacts, we find that topological FeTe0.55Se0.45 exhibits an anomalous conductance plateau absent in topologically trivial FeTe0.40Se0.60 and Fe1.02Te0.55Se0.45 under comparable measurements. This plateau requires uninterrupted sharp edges connecting source and drain, persists over micrometer-scale separations far exceeding the bulk coherence length, shows strongly suppressed thermal broadening, and collapses when the drain is moved to the top surface. Its temperature evolution follows the TRSB scale: the plateau remains weakly broadened below T*Kerr and disappears near TKerr rather than Tc. These doping-selective, edge-geometry-dependent, TRSB-correlated, and long-range nonlocal signatures establish experimental criteria for identifying boundary-mediated superconducting transport in FeTe0.55Se0.45 and motivate phase-sensitive and theoretical studies of its microscopic origin.

cond-mat.supr-con↗

arXiv2025

Weyl-Superconductivity revealed by Edge Mode mediated Nonlocal Transport

Topological superconductivity (TSC) hosts exotic modes enabling error-free quantum computation and low-temperature spintronics. Despite preliminary evidence of edge modes, unambiguous signatures remain undetected. Here, we report the first observation of protected, non-local transport from the edge modes of the potential Weyl-superconductor \ch{FeTe_{0.55}Se_{0.45}}. Namely resonant charge injection, ballistic transport, and extraction via edge modes. An anomalous conductance plateau emerges only when topological, superconducting, and magnetic phases coexist, with source-drain contacts coupled via the edge. Moving the drain to the bulk switches the non-local transport process to a local Andreev process, generating a zero-bias conductance peak (ZBCP). The edge mode's topological protection is confirmed by its insensitivity to external magnetic fields and increasing temperatures until the spontaneous magnetization is substantially suppressed. Our findings provide a new methodology to demonstrate TSC edge states in \ch{FeTe_{0.55}Se_{0.45}} via topologically protected non-local transport.

cond-mat.supr-con↗

arXiv2025

Characteristic exciton energy scales in antiferromagnetic NiPS$_3$

Two-dimensional antiferromagnets are promising materials for spintronics. The van der Waals antiferromagnet NiPS$_3$ has attracted extensive interest due to its ultra-narrow exciton feature which is closely linked with the magnetic ordering. Here, we use time-resolved terahertz spectroscopy to investigate photo-excited carriers in NiPS$_3$. We identify the onset of interband transitions and estimate the exciton dissociation energy from the excitation wavelength and fluence dependence of the transient spectral weight. Our results provide key insights to quantify the exciton characteristics and validate the band structure for NiPS$_3$.

cond-mat.str-el↗

arXiv2024

Long-lived population inversion in resonantly driven excitonic antiferromagnet

Van der Waals magnets are an emerging material family for investigating light-matter interactions and spin-correlated excitations. Here, we report the discovery of a photo-induced state with a lifetime of 17 ps in the van der Waals antiferromagnet NiPS$_3$, which appears exclusively with resonant pumping at 1.476 eV in the antiferromagnetic state. The long-lived state comes with a negative photoconductivity, a characteristic optical response of population inversion. Our findings demonstrate a promising pathway to potentially achieve long-lived lasing at terahertz frequencies in reduced dimensions.

cond-mat.str-el↗

arXiv2024

Spectral evidence for NiPS3 as a Mott-Hubbard insulator

The layered van der Waals trichalcogenide NiPS3 has attracted widespread attention due to its unique optical, magnetic, and electronic properties. The complexity of NiPS3 itself, however, has also led to ongoing debates regarding its characteristics such as the existence of self-doped ligand holes. In this study, X-ray absorption spectroscopy and resonant inelastic X-ray scattering have been applied to investigate the electronic structure of NiPS3. With the aid of theoretical calculations using the charge-transfer multiplet model, we provide experimental evidence for NiPS3 being a Mott-Hubbard insulator rather than a charge-transfer insulator. Moreover, we explain why some previous XAS studies have concluded that NiPS3 is a charge-transfer insulator by comparing surface and bulk sensitive spectra.

cond-mat.str-el↗

arXiv2024

Revealing the Electronic Structure of van der Waals Antiferromagnetic NiPS$_3$ through Synchrotron-Based $\mu$-ARPES and Alkali Metal Dosing

This study presents a comprehensive analysis of the band structure in NiPS$_3$, a van der Waals layered antiferromagnet, utilizing high-resolution synchrotron-based angle-resolved photoemission spectroscopy (ARPES) and corroborative density functional theory (DFT) calculations. By tuning the parameters of the light source, we obtained a very clear and wide energy range band structure of NiPS$_3$. Comparison with DFT calculations allows for the identification of the orbital character of the observed bands. Our DFT calculations perfectly match the experimental results, and no adaptations were made to the calculations based on the experimental outcomes. The appearance of novel electronic structure upon alkali metal dosing (AMD) were also obtained in this ARPES study. Above valence band maximum, structure of conduction bands and bands from defect states were firstly observed in NiPS$_3$. We provide the direct determination of the band gap of NiPS$_3$ as 1.3 eV from the band structure by AMD. In addition, detailed temperature dependent ARPES spectra were obtained across a range that spans both below and above the N\'eel transition temperature of NiPS$_3$. We found that the paramagnetic and antiferromagnetic states have almost identical spectra, indicating the highly localized nature of Ni $d$ states.

cond-mat.mtrl-sci↗

arXiv2023

Observation of three-state nematicity and domain evolution in atomically-thin antiferromagnetic NiPS3

Nickel phosphorus trisulfide (NiPS3), a van der Waals (vdW) 2D antiferromagnet, has captivated enormous attention for its intriguing physics in recent years. However, despite its fundamental importance in physics of magnetism and promising potential for technological applications, the study of magnetic domains in NiPS3 down to atomically thin is still lacking. Here, we report the layer-dependent magnetic characteristics and magnetic domains within antiferromagnetic NiPS3 by employing linear dichroism (LD) combined with polarized microscopy, spin-correlated photoluminescence (PL), and Raman spectroscopy. Our results reveal the existence of the paramagnetic-to-antiferromagnetic phase transition in bulk to bilayer NiPS3 with stronger spin fluctuation in thinner NiPS3. Furthermore, our study identifies three distinct antiferromagnetic domains within atomicallythin NiPS3 and captures the thermally-activated domain evolution. Our findings provide crucial insights for the development of antiferromagnetic spintronics and related technologies.

cond-mat.mtrl-sci↗

arXiv2023

Imaging Strain-Localized Single-Photon Emitters in Layered GaSe below the Diffraction Limit

Nanoscale strain control of exciton funneling is an increasingly critical tool for the scalable production of single photon emitters (SPEs) in two-dimensional materials. However, conventional far-field optical microscopies remain constrained in spatial resolution by the diffraction limit and thus can only provide a limited description of nanoscale strain localization of SPEs. Here, we quantify the effects of nanoscale heterogeneous strain on the energy and brightness of GaSe SPEs on nanopillars with correlative cathodoluminescence, photoluminescence, and atomic force microscopies supported by density functional theory simulations. We report the strain-localized SPEs have a broad range of emission wavelengths from 620 nm to 900 nm. We reveal substantial strain-controlled SPE wavelength tunability over a ~ 100 nm spectral range and two-orders of magnitude enhancement in the SPE brightness at the pillar center due to Type-I exciton funneling. In addition, we show that radiative biexciton cascade processes contribute to the observed CL photon superbunching. Also, the measured GaSe SPE photophysics after electron beam exposure shows the excellent stability of these SPEs. We anticipate this insight into nanoscale strain control of two-dimensional SPEs will guide the development of truly deterministic quantum photonics.

physics.optics↗

arXiv2023

Van der Waals device integration beyond the limits of van der Waals forces via adhesive matrix transfer

Pristine van der Waals (vdW) interfaces between two-dimensional (2D) and other materials are core to emerging optical and electronic devices. Their direct fabrication is, however, challenged as the vdW forces are weak and cannot be tuned to accommodate integration of arbitrary layers without solvents, sacrificial-layers or high-temperatures, steps that can introduce damage. To address these limitations, we introduce a single-step 2D material-to-device integration approach in which forces promoting transfer are decoupled from the vdW forces at the interface of interest. We use this adhesive matrix transfer to demonstrate conventionally-forbidden direct integration of diverse 2D materials (MoS2, WSe2, PtS2, GaS) with dielectrics (SiO2, Al2O3), and scalable, aligned heterostructure formation, both foundational to device development. We then demonstrate a single-step integration of monolayer-MoS2 into arrays of transistors. With no exposure to polymers or solvents, clean interfaces and pristine surfaces are preserved, which can be further engineered to demonstrate both n- and p-type behavior. Beyond serving as a platform to probe the intrinsic properties of sensitive nanomaterials without the influence of processing steps, our technique allows efficient formation of unconventional device form-factors, with an example of flexible transistors demonstrated.

physics.app-ph↗

arXiv2022

Deterministic Localization of Strain-induced Single-photon Emitters in Multilayer GaSe

Nanoscale strain has emerged as a powerful tool for controlling single-photon emitters (SPEs) in atomically thin transition metal dichalcogenides (TMDCs)(1, 2). However, quantum emitters in monolayer TMDCs are typically unstable in ambient conditions. Multilayer two-dimensional (2D) TMDCs could be a solution, but they suffer from low quantum efficiency, resulting in low brightness of the SPEs. Here, we report the deterministic spatial localization of strain-induced single-photon emitters in multilayer GaSe by nanopillar arrays. The strain-controlled quantum confinement effect introduces well-isolated sub-bandgap photoluminescence and corresponding suppression of the broad band edge photoluminescence. Clear photon-antibunching behavior is observed from the quantum dot-like GaSe sub-bandgap exciton emission at 3.5 Kelvin. The strain-dependent confinement potential and the brightness are found to be strongly correlated, suggesting a promising route for tuning and controlling SPEs. The comprehensive investigations of strain-engineered GaSe SPEs provide a solid foundation for the development of 2D devices for quantum photonic technologies.

cond-mat.mtrl-sci↗