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Qishuo Yang

Publications and source records attributed to Qishuo Yang.

3 recordsLinked to original sources

Correlated electronic structures and unconventional superconductivity in bilayer nickelate heterostructures

The recent discovery of ambient-pressure superconductivity in thin-film bilayer nickelates opens new possibilities for investigating electronic structures in this new class of high-transition temperature $T_C$ superconductors. Here, we construct a realistic multi-orbital Hubbard model for the thin-film system, by integrating ab initio calculations with scanning transmission electron microscopy (STEM) measurements, which reveal a higher-symmetry lattice. The interaction parameters are calculated with the constrained random phase approximation (cRPA). Density functional theory (DFT) plus cluster dynamical mean-field theory (CDMFT) calculations, with cRPA calculated on-site Coulomb repulsive $U$ and experimentally measured electron filling $n$, quantitatively reproduces Fermi surfaces from angle-resolved photoemission spectroscopy (ARPES) experiments. The distinct Fermi surface topology from simple DFT+$U$ results features the indispensable role of correlation effects. Based upon the correlated electronic structures, A modified random-phase-approximation (RPA) approach yields a pronounced $s^{\pm}$-wave pairing instability, due to the strong spin fluctuations originated from Fermi surface nesting between bands with predominantly $d_{z^{2}}$ characters. Our findings highlight the quantitative effectiveness of the DFT+cRPA+CDMFT approach that precisely determines correlated electronic structure parameters without fine-tuning. The revealed intermediate correlation effect may explain the same order-of-magnitude onset $T_C$ observed both in pressured bulk and strained thin film bilayer nickelates.

cond-mat.str-el

Gigantic-oxidative atomic-layer-by-layer epitaxy for artificially designed complex oxides

In designing material functionalities for transition metal oxides, lattice structure and d-orbital occupancy are key determinants. However, the modulation of these two factors is inherently limited by the need to balance thermodynamic stability, growth kinetics, and stoichiometry precision, particularly for metastable phases. We introduce a methodology, namely the gigantic-oxidative atomic-layer-by-layer epitaxy (GOALL-Epitaxy), enhancing oxidation power 3-4 orders of magnitude beyond conventional pulsed laser deposition (PLD) and oxide molecular beam epitaxy (OMBE), while ensuring atomic-layer-by-layer growth of designed complex structures. Thermodynamic stability is markedly augmented with stronger oxidation at elevated temperatures, whereas growth kinetics is sustained by laser ablation at lower temperatures. We demonstrate the accurate growth of complex nickelates and cuprates, especially an artificially designed structure with alternating single and double NiO2 layers possessing distinct nominal d-orbital occupancy, as a parent of high-temperature superconductor. The GOALL-Epitaxy enables material discovery within the vastly broadened growth parameter space.

cond-mat.str-el

Dative epitaxy of commensurate monocrystalline covalent-van der Waals moir\'e supercrystal

Realizing van der Waals (vdW) epitaxy in the 80s represents a breakthrough that circumvents the stringent lattice matching and processing compatibility requirements in conventional covalent heteroepitaxy. However, due to the weak vdW interactions, there is little control over film qualities by the substrate. Typically, discrete domains with a spread of misorientation angles are formed, limiting the applicability of vdW epitaxy. Here we report the epitaxial growth of monocrystalline, covalent Cr5Te8 2D crystals on monolayer vdW WSe2 by chemical vapor deposition, driven by interfacial dative bond formation. The lattice of Cr5Te8, with a lateral dimension of a few ten microns, is fully commensurate with that of WSe2 via 3 x 3 (Cr5Te8)-7 x 7 (WSe2) supercell matching, forming a single crystalline moire superlattice. Our work has established a conceptually distinct paradigm of thin film epitaxy termed dative epitaxy, which takes full advantage of covalent epitaxy with chemical bonding for fixing the atomic registry and crystal orientation, while circumventing its stringent lattice matching and processing compatibility requirements; conversely, it ensures the full flexibility of vdW epitaxy, while avoiding its poor orientation control. Cr5Te8 2D crystals grown by dative epitaxy exhibit square magnetic hysteresis, suggesting minimized interfacial defects that can serve as pinning sites.

cond-mat.mtrl-sci