Hybrid-Integrated DFB-Laser-Coupled 1 * 8 Thin-Film Lithium Niobate Modulator Array for High-Speed Parallel Optical Transmitters
Thin-film lithium niobate (TFLN) electro-optic modulators are attractive for high-speed optical interconnects, but scalable transmitter architectures require not only high modulation bandwidth but also multi-channel optical power distribution and practical laser-to-chip integration. Here, we demonstrate a hybrid-integrated 1 * 8 TFLN electro-optic modulator array passively butt-coupled to a 1550 nm distributed-feedback laser. The chip integrates a three-stage cascaded 1 * 2 multimode-interference splitter, spot-size converters, eight traveling-wave Mach-Zehnder modulators, thermal tuning electrodes, and on-chip 50 Ω terminations. The cascaded splitter provides uniform optical power distribution with a maximum normalized power deviation of 9.7%, while the optimized electrodes enable electro-optic 3 dB bandwidths exceeding 40 GHz for all channels. The measured half-wave voltages are 3.60-3.83 V, corresponding to VπL products of 2.52-2.68 V cm for a 7 mm modulation length, and the extinction ratio reaches approximately 25 dB. The bare-chip insertion loss is 15.19-16.55 dB, and DFB laser bonding introduces an additional coupling loss of approximately 5 dB while preserving channel uniformity. These results establish a practical TFLN-based multi-channel modulator platform and represent a step toward compact hybrid-integrated optical transmitters for high-speed parallel interconnects.